PHILIPS TSA5060A

INTEGRATED CIRCUITS
DATA SHEET
TSA5060A
1.3 GHz I2C-bus controlled low
phase noise frequency synthesizer
Product specification
Supersedes data of 2000 Sep 19
File under Integrated Circuits, IC02
2000 Oct 24
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
TSA5060A
FEATURES
• Complete 1.3 GHz single chip system
• Optimized for low phase noise
• Selectable divide-by-two prescaler
• Operation up to 1.3 GHz without divide-by-two prescaler
The comparison frequency is obtained from an on-chip
crystal oscillator that can also be driven from an external
source. Either the crystal frequency or the comparison
frequency can be switched to the XT/COMP output pin to
drive the reference input of another synthesizer or the
clock input of a digital demodulation IC.
• Selectable reference divider ratio
• Compatible with UK-DTT (Digital Terrestrial Television)
offset requirements
• Selectable crystal or comparison frequency output
• Four selectable charge pump currents
• Four selectable I2C-bus addresses
Both divided and comparison frequencies are compared in
the fast phase detector which drives the charge pump.
The loop amplifier is also on-chip, however an external
NPN transistor to drive directly the 33 V tuning voltage.
• Standard and fast mode I2C-bus
• I2C-bus compatible with 3.3 and 5 V microcontrollers
• 5-level Analog-to-Digital Converter (ADC)
Control data is entered via the I2C-bus; five serial bytes are
required to address the device, select the main divider
ratio, the reference divider ratio, program the four output
ports, set the charge pump current, select the prescaler by
two, select the signal to switch to the XT/COMP output pin
and select a specific test mode. Three of the four output
ports can also be used as input ports and a 5-level ADC is
provided. Digital information concerning the input ports
and the ADC can be read out of the TSA5060A on the SDA
line (one status byte) during a READ operation. A flag is
set when the loop is ‘in-lock’ and is read during a READ
operation, as well as the Power-on reset flag. The device
has four programmable addresses, programmed by
applying a specific voltage at pin AS, enabling the use of
multiple synthesizers in the same system.
• Low power consumption
• Three I/O ports and one output port.
APPLICATIONS
• Digital terrestrial and cable tuning systems
• Hybrid (digital and analog) terrestrial and cable tuning
systems
• Digital set-top boxes.
GENERAL DESCRIPTION
The TSA5060A is a single chip PLL frequency synthesizer
designed for terrestrial and cable tuning systems up to
1.3 GHz.
The RF preamplifier drives the 17-bit main divider enabling
a step size equal to the comparison frequency, for an input
frequency up to 1.3 GHz covering the complete terrestrial
frequency range. A fixed divide-by-two additional
prescaler can be inserted between the preamplifier and
the main divider. In this case, the step size is twice the
comparison frequency.
2000 Oct 24
2
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
TSA5060A
QUICK REFERENCE DATA
VCC = 4.5 to 5.5 V; Tamb = −20 to +85 °C; unless otherwise specified.
SYMBOL
PARAMETER
VCC
supply voltage
ICC
supply current
fi(RF)
RF input frequency
Vi(RF)(rms)
RF input voltage (RMS value)
CONDITIONS
Tamb = 25 °C
MIN.
TYP.
MAX.
UNIT
4.5
5.0
5.5
V
30
37
45
mA
64
−
1300
MHz
12.6
−
300
mV
−25
−
+2.5
dBm
fi(RF) from 150 to 1300 MHz; note 1 7.1
−
300
mV
fi(RF) from 64 to 150 MHz; note 1
−30
−
+2.5
dBm
fxtal
crystal frequency
4
−
16
MHz
Tamb
ambient temperature
−20
−
+85
°C
Tstg
storage temperature
−40
−
+150
°C
Note
1. Asymmetrical drive on pin RFA or RFB; see Fig.3.
ORDERING INFORMATION
TYPE
NUMBER
TSA5060AT
TSA5060ATS
2000 Oct 24
PACKAGE
NAME
SO16
SSOP16
DESCRIPTION
VERSION
plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
plastic shrink small outline package; 16 leads; body width 4.4 mm
SOT369-1
3
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
TSA5060A
BLOCK DIAGRAM
handbook, full pagewidth
3
XTAL
2
XTAL
OSCILLATOR
REFERENCE
DIVIDER
XT/COMP
LOCK
DETECT
4-BIT LATCH
DIGITAL PHASE
COMPARATOR
RFA
RFB
13
14
DIVIDER
1/2
PRE
AMP
17-BIT
DIVIDER
CHARGE PUMP
1-BIT
LATCH
1
17-BIT LATCH
DIVIDE RATIO
AMP
AS
SCL
SDA
16
6
5
I2C-BUS
TRANSCEIVER
12
11
3-BIT
ADC
3-BIT
INPUT
PORTS
4-BIT LATCH
AND
OUTPUT PORTS
POWER-ON
RESET
MODE
CONTROL
LOGIC
TSA5060A
7
8
9
10
FCE717
P3 P2 P1 P0
Fig.1 Block diagram.
2000 Oct 24
DRIVE
4
15
ADC
CP
2-BIT
LATCH
4
VCC
GND
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
TSA5060A
PINNING
SYMBOL
PIN
DESCRIPTION
CP
1
charge pump output
XTAL
2
crystal oscillator input
XT/COMP
3
fxtal or fcomp signal output
AS
4
I2C-bus
SDA
5
I2C-bus serial data input/output
SCL
6
I2C-bus serial clock input
P3
7
general purpose output Port 3
P2
8
general purpose input/output Port 2
P1
9
P0
handbook, halfpage
CP 1
address selection input
16 DRIVE
XTAL 2
15 GND
XT/COMP 3
14 RFB
AS 4
13 RFA
TSA5060A
SDA 5
12 VCC
general purpose input/output Port 1
SCL 6
11 ADC
10
general purpose input/output Port 0
P3 7
ADC
11
analog-to-digital converter input
P2 8
VCC
12
supply voltage
RFA
13
RF signal input A
RFB
14
RF signal input B
GND
15
ground
DRIVE
16
external NPN drive output
9
P1
FCE718
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION
ratio 24 to cope with the offset requirement of the UK-DTT
system, see Table 8.
The TSA5060A contains all the necessary elements
except a reference source, a loop filter and an external
NPN transistor to control a varicap tuned local oscillator
forming a phase locked loop frequency synthesized
source. The IC is designed in a high speed process with a
fast phase detector to allow a high comparison frequency
to reach a low phase noise level on the oscillator.
The output of the phase comparator drives the
charge pump and the loop amplifier section. This amplifier
requires the use of an external NPN transistor. Pin CP is
the output of the charge pump, and pin DRIVE is
connected to the base of the external transistor. This
transistor has its emitter grounded and the collector drives
the tuning voltage to the varicap diode of the Voltage
Controlled Oscillator (VCO). The loop filter has to be
connected between pin CP and the collector of the
external NPN transistor (see Fig.4).
The block diagram is shown in Fig.1. The RF signal is
applied at pins RFA and RFB. The input preamplifier
provides a good sensitivity. The output of the preamplifier
is fed to the 17-bit programmable divider either through a
divide-by-two prescaler or directly. Because of the internal
high speed process, the RF divider is working at a
frequency up to 1.3 GHz, without the need for the
divide-by-two prescaler to be used.
It is also possible to drive another PLL synthesizer, or the
clock input of a digital demodulation IC, from
pin XT/COMP. It is possible to select by software either
fxtal, the crystal oscillator frequency or fcomp, the frequency
present after the reference divider. It is also possible to
switch off this output, in case it is not used.
The output of the 17-bit programmable divider fDIV is fed
into the phase comparator, where it is compared in both
phase and frequency with the comparison frequency fcomp.
This frequency is derived from the signal present at
pin XTAL, fxtal, divided down in the reference divider. It is
possible either to connect a quartz crystal to pin XTAL and
then using the on-chip crystal oscillator, or to feed this pin
with a reference signal from an external source.
The reference divider can have a dividing ratio selected
from 16 different values between 2 and 320, including the
2000 Oct 24
10 P0
For test and alignment purposes, it is possible to release
the drive output to be able to apply an external voltage on
it, to select one of the three charge pump test modes, and
to monitor half the fDIV at Port P0. See Table 10 for all
possible modes.
Four open-collector output ports are provided on the IC for
general purpose; three of these can also be used as input
ports. A 3-bit ADC is also available.
5
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
The TSA5060A is controlled via the two-wire I2C-bus.
For programming, there is one 7-bit module address and
bit R/W for selecting READ or WRITE mode.
TSA5060A
To allow a smooth frequency sweep for fine tuning, and
while the data of the dividing ratio of the main divider is in
data bytes 2, 3 and 4, it is necessary to change the
frequency to send the data bytes 2 to 5 in a repeated
sending, or to finish an incomplete transmission by a
STOP condition. Repeated sending of data bytes 2 and 3
without ending the transmission does not change the
dividing ratio. To illustrate, the following data sequences
will change the dividing ratio:
To be able to have more than one synthesizer in an
I2C-bus system, one of four possible addresses is selected
depending on the voltage applied at pin AS (see Table 3).
The TSA5060A fulfils the fast mode I2C-bus, according to
the Philips I2C-bus specification. The I2C-bus interface is
designed in such a way that pins SCL and SDA can be
connected either to 5 or 3.3 V pulled-up I2C-bus lines,
allowing the PLL synthesizer to be connected directly to
the bus lines of a 3.3 V microcontroller.
• Bytes 2, 3, 4 and 5
• Bytes 4, 5, 2 and 3
• Bytes 2, 3, 4 and STOP
• Bytes 4, 5, 2 and STOP
WRITE mode: R/W = 0
• Bytes 2, 3 and STOP
After the address transmission (first byte), data bytes can
be sent to the device (see Table 1). Four data bytes are
needed to fully program the TSA5060A. The bus
transceiver has an auto-increment facility that permits
programming of the TSA5060A within one single
transmission (address + 4 data bytes).
• Bytes 2 and STOP
• Bytes 4 and STOP.
The TSA5060A can also be partly programmed on the
condition that the first data byte following the address is
byte 2 or 4. The meaning of the bits in the data bytes is
given in Table 1. The first bit of the first data byte indicates
whether byte 2 (first bit is logic 0) or byte 4 (first bit is
logic 1) will follow. Until an I2C-bus STOP condition is sent
by the controller, additional data bytes can be entered
without the need to re-address the device.
Table 1
Write data format
BYTE
DESCRIPTION
MSB(1)
LSB
CONTROL BIT
1
address
1
1
0
0
0
MA1
MA0
0
A
2
programmable divider
0
N14
N13
N12
N11
N10
N9
N8
A
3
programmable divider
N7
N6
N5
N4
N3
N2
N1
N0
A
4
control data
1
N16
N15
PE
R3
R2
R1
R0
A
5
control data
C1
C0
XCE
XCS
P3
P2/T2
P1/T1
P0/T0
A
Note
1. MSB is transmitted first.
2000 Oct 24
6
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
Table 2
TSA5060A
Explanation of Table 1
BIT
DESCRIPTION
MA1 and MA0
programmable address bits; see Table 3
A
acknowledge bit
N16 to N0
programmable main divider ratio control bits; N = N16 × 216 + N15 × 215 + ... + N1 × 21 + N0
PE
prescaler enable (prescaler by 2 is active when bit PE = 1)
R3 to R0
programmable reference divider ratio control bits; see Table 8
C1 and C0
charge pump current select bits; see Table 9
XCE
XT/COMP enable; XT/COMP output active when bit XCE = 1; see Table 10
XCS
XT/COMP select; signal select when bit XCE = 1, test mode enable when bit XCE = 0; see Table 10
T2, T1 and T0
test mode select when bit XCE = 0 and bit XCS = 1; see Table 10
P3, P2 and P1
Port P3, P2 and P1 output states
P0
Port P0 output state, except in test mode; see Table 10
Address selection
The module address contains the programmable address bits MA1 and MA0, which offer the possibility of having
up to 4 synthesizers in one system. The relationship between MA1 and MA0 and the input voltage at pin AS is given in
Table 3.
Table 3
Address selection
MA1
MA0
VOLTAGE APPLIED TO PIN AS
0
0
0 to 0.1VCC
0
1
open-circuit
1
0
0.4VCC to 0.6VCC; note 1
1
1
0.9VCC to VCC
Note
1. This address is selected by connecting a 15 kΩ resistor between pin AS and pin VCC.
Status at Power-On Reset (POR)
At power-on or when the supply voltage drops below approximately 2.75 V internal registers are set according to Table 4.
Table 4
Status at Power-on reset; note 1
BYTE
DESCRIPTION
MSB
LSB
CONTROL BIT
1
address
1
1
0
0
0
MA1
MA0
0
A
2
programmable divider
0
X
X
X
X
X
X
X
A
3
programmable divider
X
X
X
X
X
X
X
X
A
4
control data
1
X
X
X
X
X
X
X
A
1
X(2)
1(2)
X(2)
X(2)
A
5
control data
0
0
0
Notes
1. X = don’t care.
2. At Power-on reset, all output ports are in high-impedance state.
2000 Oct 24
7
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
The POR flag is set to logic 1 when VCC drops below
approximately 2.75 V and at power-on.
READ mode: R/W = 1
Data can be read out of the TSA5060A by setting bit R/W
to logic 1 (see Table 5). After the slave address has been
recognized, the TSA5060A generates an acknowledge
pulse and the first data byte (status word) is transferred on
the SDA line. Data is valid on the SDA line during a
HIGH-level of the SCL clock signal.
It is reset to logic 0 when an end of data is detected by the
TSA5060A (end of a READ sequence).
Control of the loop is made possible with the in-lock flag
which indicates if the loop is phase-locked (bit FL = 1).
The bits I2, I1 and I0 represent the status of the I/O ports
P2, P1 and P0 respectively. A logic 0 indicates a
LOW-level and a logic 1 indicates a HIGH-level.
A second data byte can be read out of the TSA5060A if the
microcontroller generates an acknowledge bit on the
SDA line. End of transmission will occur if no acknowledge
bit from the controller occurs.The TSA5060A will then
release the data line to allow the microcontroller to
generate a STOP condition. When ports P0 to P2 are
used as inputs, they must be programmed in their
high-impedance state.
Table 5
TSA5060A
A built-in 5-level ADC is available at pin ADC. This
converter can be used to feed AFC information to the
microcontroller through the I2C-bus. The relationship
between bits A2, A1, A0 and the input voltage at pin ADC
is given in Table 7.
Read data format
BYTE
DESCRIPTION
1
address
2
status byte
MSB(1)
1
1
0
0
0
MA1
MA0
1
A
FL
I2
I1
I0
A2
A1
A0
−
1. MSB is transmitted first.
Explanation of Table 5
BIT
DESCRIPTION
A
acknowledge bit
MA1 and MA0
programmable address bits; see Table 3
POR
Power-on reset flag (bit POR = 1 at power-on)
FL
in-lock flag (bit FL = 1 when the loop is phase-locked)
I2, I1 and I0
digital information for I/O ports P2, P1 and P0 respectively
A2, A1 and A0
digital outputs of the 5-level ADC; see Table 7
Table 7
ADC levels
VOLTAGE APPLIED TO PIN ADC(1)
A2
A1
A0
1
0
0
0.6VCC to VCC
0
1
1
0.45VCC to 0.6VCC
0
1
0
0.3VCC to 0.45VCC
0
0
1
0.15VCC to 0.3VCC
0
0
0
0 to 0.15VCC
Note
1. Accuracy is ±0.03 VCC.
2000 Oct 24
CONTROL
BIT
POR
Note
Table 6
LSB
8
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
Reference divider ratio
Table 8 shows the different dividing ratios and the
corresponding comparison frequencies and step size,
assuming the device is provided with a 4 MHz signal at
pin XTAL.
The reference divider ratio is set by 4 bits in the WRITE
mode, giving 16 different ratios. This allows the
comparison frequency to be adjusted to different values,
depending on the compromise which has to be found
between step size and phase noise.
Table 8
TSA5060A
The dividing ratio of 24 is implemented to fulfil the UK-DTT
recommendation regarding offset frequency of 1⁄6 MHz.
Reference dividing ratios
STEP
R3
R2
R1
R0
RATIO
COMPARISON
FREQUENCY(1)
BIT PE = 0(1)
BIT PE = 1(1)
0
0
0
0
2
2 MHz
2 MHz
4 MHz
0
0
0
1
4
1 MHz
1 MHz
2 MHz
0
0
1
0
8
500 kHz
500 kHz
1 MHz
0
0
1
1
16
250 kHz
250 kHz
500 kHz
0
1
0
0
32
125 kHz
125 kHz
250 kHz
0
1
0
1
64
62.5 kHz
62.5 kHz
125 kHz
0
1
1
0
128
31.25 kHz
31.25 kHz
62.5 kHz
0
1
1
1
256
15.625 kHz
15.625 kHz
31.25 kHz
1
0
0
0
24
166.67 kHz
166.67 kHz
333.33 kHz
1
0
0
1
5
800 kHz
800 kHz
1.6 MHz
1
0
1
0
10
400 kHz
400 kHz
800 kHz
1
0
1
1
20
200 kHz
200 kHz
400 kHz
1
1
0
0
40
100 kHz
100 kHz
200 kHz
1
1
0
1
80
50 kHz
50 kHz
100 kHz
1
1
1
0
160
25 kHz
25 kHz
50 kHz
1
1
1
1
320
12.5 kHz
12.5 kHz
25 kHz
Note
1. Only valid when the IC is used with a 4 MHz crystal.
Charge pump current
The charge pump current can be chosen from 4 different values depending on the value of bits C1 and C0 in the I2C-bus
byte 4; see Table 9.
Table 9
Charge pump current
C1
Icp (µA) (absolute value)
C0
MIN.
TYP.
MAX.
0
0
100
135
170
0
1
210
280
350
1
0
450
600
750
1
1
920
1230
1540
2000 Oct 24
9
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
TSA5060A
If needed, the prescaler can be selected by setting bit PE
to logic 1 while it is not in use if bit PE is set to logic 0.
XT/COMP frequency output
It is possible to output either the crystal or the comparison
frequency at pin XT/COMP to be used in the application.
For example, to drive a second PLL synthesizer saving a
quartz crystal. To output fxtal it is necessary to set bit XCE
to logic 1 and bit XCS to logic 0, or bit XCE to logic 0 and
bit XCS to logic 1 during a test mode, while to output fcomp
it is necessary to set both bits XCE and XCS to logic 1.
If it is important to reach a low phase noise on the
controlled VCO, it is recommended to set bit PE to logic 0
and not to use the prescaler allowing the comparison
frequency to be equal to the step size.
Test modes
It is possible to access the test modes by setting bit XCE
to logic 0 and bit XCS to logic 1. One specific test mode is
then selected using bits T2, T1 and T0, as described in
Table 10.
If the output signal at this pin is not used it is recommended
to disable it by setting both bits XCE and XCS to logic 0.
Table 10 shows how this pin is programmed. At power-on,
the XT/COMP output is set with the fxtal signal selected.
Prescaler enable
The TSA5060A is able to work with the relationship
fcomp = step size for an input frequency up to 1.3 GHz,
covering the complete terrestrial and cable frequency
range.
Table 10 XT/COMP and test mode selection; note 1
XCE
XCS
T2
T1
T0
XT/COMP OUTPUT
0
0
X
X
X
disabled
normal operation
1
0
X
X
X
fxtal
normal operation
1
1
X
X
X
fcomp
normal operation
0
1
0
0
0
fxtal
test operation: charge pump sink;
status byte bit FL = 1
0
1
0
0
1
fxtal
test operation: charge pump source;
status byte bit FL = 0
0
1
0
1
0
fxtal
test operation: charge pump disabled;
status byte bit FL = 0
0
1
0
1
1
fxtal
test operation: 1⁄2fDIV switched to Port P0
0
1
1
X
X
fxtal
test operation: drive voltage (pin DRIVE)
is off (high-impedance); note 2
Notes
1. X = don’t care.
2. Status at Power-on reset.
2000 Oct 24
10
TEST MODE
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
TSA5060A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); note 1.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−0.3
+6.0
V
CP, XTAL, XT/COMP, AS, P0, P1, P2,
P3, ADC, RFA and RFB
−0.3
VCC + 0.3
V
SCL and SDA
−0.3
+6.0
V
−1
+1
mA
−1.0
+10.0
mA
−1.0
+20.0
mA
VCC
supply voltage
Vn
voltage on pins
IO(drive)
output current on pin DRIVE
IO(SDA)
serial data output current
IO(Px)
P0, P1, P2 and P3 output current
IO(ΣPx)
sum of currents in P0, P1, P2 and P3
−
50.0
mA
Tamb
ambient temperature
−20
+85
°C
Tstg
storage temperature
−40
+150
°C
Tj(max)
maximum junction temperature
−
150
°C
port switched on
Note
1. Maximum ratings cannot be exceeded, not even momentarily without causing irreversible IC damage. Maximum
ratings cannot be accumulated.
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be completely safe, it is
desirable to take normal precautions appropriate to handling integrated circuits.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
2000 Oct 24
PARAMETER
CONDITIONS
VALUE
UNIT
TSA5060AT
115
K/W
TSA5060ATS
144
K/W
thermal resistance from junction to ambient in free air
11
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
TSA5060A
CHARACTERISTICS
VCC = 4.5 to 5.5 V; Tamb = −20 to +85 °C; fxtal = 4 MHz; measured according to Fig.4; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply (pin VCC)
VCC
supply voltage
4.5
5.0
5.5
V
ICC
supply current
30
37
45
mA
VCC(POR)
supply voltage below which POR is active Tamb = 25 °C
−
2.75
−
V
64
−
1300
MHz
fi(RF) between 64 and
150 MHz; note 1
12.6
−
300
mV
−25
−
+2.5
dBm
fi(RF) between 150 and
1300 MHz; note 1
7.1
−
300
mV
Tamb = 25 °C
RF inputs (pins RFA and RFB)
fi(RF)
RF input frequency
Vi(RF)(rms)
RF input voltage (RMS value)
−30
−
+2.5
dBm
Zi(RF)
RF input impedance
see Fig.6
−
−
−
Ω
Ci(RF)
RF input capacitance
see Fig.6
−
−
−
pF
MDR
main divider ratio
prescaler disabled
64
−
131071
prescaler enabled
128
−
262142
Crystal oscillator (pin XTAL)
fxtal
crystal frequency
4
−
16
MHz
ZXTAL
crystal oscillator negative impedance
4 MHz crystal
400
680
−
Ω
ZXTAL
recommended crystal series resistance
4 MHz crystal
−
−
200
Ω
PXTAL
crystal drive level
4 MHz crystal; note 2
−
40
−
µW
fi(ext)
external reference input frequency
note 3
2
−
20
MHz
Vi(ext)(p-p)
external reference input voltage
(peak-to-peak value)
note 3
200
−
500
mV
−
−
2
MHz
Phase comparator and charge pump
fcomp
comparison frequency
Ncomp
equivalent phase noise at the phase
detector input
fcomp = 250 kHz;
C1 = C0 = 1;
in the loop bandwidth
−
−157
−
dBc/Hz
Icp
charge pump current
C1 = 0; C0 = 0
100
135
170
µA
C1 = 0; C0 = 1
210
280
350
µA
C1 = 1; C0 = 0
450
600
750
µA
C1 = 1; C0 = 1
920
1230
1540
µA
−10
0
+10
nA
ILO(cp)
charge pump leakage output current
DRIVE output (pin DRIVE)
VO(drive)
output voltage when the charge pump is
sinking current
XCE = 0; XCS = 1;
T2 = 0; T1 = 0; T0 = 0
−
140
250
mV
IO(drive)
output current when the charge pump is
sourcing current
XCE = 0; XCS = 1;
T2 = 0; T1 = 0; T0 = 1
100
250
−
µA
2000 Oct 24
12
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
SYMBOL
TSA5060A
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
XT/COMP output (pin XT/COMP)
Vo(p-p)
AC output voltage (peak-to-peak value)
XCE = 1
−
400
−
mV
Input/output and output ports (pins P0, P1, P2 and P3)
IlO
port leakage current
port off; VO = VCC
−
−
10
µA
VO(sat)
output port saturation voltage
port on; Isink = 10 mA
−
0.2
0.4
V
VIL
LOW-level input voltage
−
−
1.5
V
VIH
HIGH-level input voltage
3.0
−
−
V
ADC input (pin ADC)
ILIH
HIGH-level input leakage current
VADC = VCC
−
−
10
µA
ILIL
LOW-level input leakage current
VADC = 0 V
−10
−
−
µA
Address selection (pin AS)
ILIH
HIGH-level input leakage current
VAS = VCC
−
−
1
mA
ILIL
LOW-level input leakage current
VAS = 0 V
−0.5
−
−
mA
SCL and SDA inputs (pins SCL and SDA)
VIL
LOW-level input voltage
including noise margin;
note 4
−
−
1.1
V
VIH
HIGH-level input voltage
including noise margin;
note 5
2.67
−
−
V
ILIH
HIGH-level input leakage current
VIH = 5.5 V
VCC = 5.5 V
−
−
10
µA
VCC = 0 V
−
−
10
µA
−10
−
−
µA
−
−
400
kHz
−
−
0.4
V
ILIL
LOW-level input leakage current
fSCL
SCL clock frequency
VIL = 0 V; VCC = 5.5 V
SDA output (pin SDA)
VO(ack)
output voltage during acknowledge
Isink = 3 mA
Notes
1. Asymmetrical drive on pin RFA or RFB; see Fig.3.
2. The drive level is expected with the crystal at series resonance with a series resistance of 50 Ω. The value will be
different with another crystal.
3. To drive pin XTAL from the pin XT/COMP of another TSA5060A, couple the signal through a capacitor of 1 nF
(to remove the DC level) in series with an 1.2 kΩ resistor; see Fig.5.
4. The voltage corresponding to a LOW-level on the I2C-bus includes the noise margin as defined in the I2C-bus
specification. The worst situation is a bus voltage of 5 V + 10%. In this case the noise margin is 0.55 V below
0.3 × 5.5 V, thus 1.1 V.
5. The voltage corresponding to a HIGH-level on the I2C-bus includes the noise margin as defined in the I2C-bus
specification. The worst situation is a bus voltage of 3.3 V − 10%. In this case the noise margin is 0.59 V above
0.7 × 2.97 V, thus 2.67 V.
2000 Oct 24
13
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
handbook, full pagewidth
TSA5060A
FCE722
+6
Vi(RF)
(dBm)
0
−6
−12
Guaranteed area
−18
−24
−30
−36
−42
−48
−54
−60
0
500
1000
Fig.3 Typical sensitivity curve.
2000 Oct 24
14
f (MHz)
1500
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
TSA5060A
APPLICATION INFORMATION
An example of a typical application is given in Fig.4. In this application the VCO centre frequency is 600 MHz with a slope
of 18 MHz/V. The expected loop bandwidth is 13 kHz with a charge pump current of 1230 µA and a comparison
frequency of 166.67 kHz. Filter components need to be adapted to each application depending on the VCO
characteristics and the required performance of the loop.
33 V
5V
handbook, full pagewidth
27 kΩ
1 kΩ
10 kΩ
47 nF
1.8 nF
180 pF
tuning
voltage
CP
4 MHz
18 pF
XTAL
XT/COMP
AS
SDA
SCL
P3
MICROCONTROLLER
P2
DRIVE
1
16
2
15 GND
BC847
14
1 nF
3
RFB
13 RFA
1 nF
4
VCC
10 nF
TSA5060A
5
12
6
11
7
10 P0
9
8
VCO
output
VCO
FCE719
ADC
P1
Fig.4 Typical application.
Loop bandwidth
It is however possible to use a crystal with a higher
frequency (up to 16 MHz) to improve the noise
performance. When choosing a crystal, care should be
taken to select a crystal able to withstand the drive level of
the TSA5060A without suffering from accelerated ageing.
Most of the applications that the TSA5060A are dedicated
for require a large loop bandwidth, in the order of a
few kHz to a few tens of kHz. The calculation of the loop
filter elements has to be done for each application, while it
depends on the VCO slope and phase noise, as well as the
reference frequency and charge pump current.
A simulation of the loop can easily be done by using the
SIMPATA software from Philips.
Reference source
It is also possible to feed pin XTAL with an external signal
between 2 and 20 MHz, coming from an external oscillator
or from the pin XT/COMP of another TSA5060A, when
more than one synthesizer is present in the same
application. The application given in Fig.5 should then be
used.
The TSA5060A is well suited to be used with a 4 MHz
crystal connected to pin XTAL. Philips crystal ordering
code 4322 143 04093 is recommended in this case.
If the signal at pin XT/COMP is not used in an application,
the output should be switched off (bits XCE = 0, XCS = 0).
This pin should then be left open.
2000 Oct 24
15
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
TSA5060A
handbook, full pagewidth
1
4 MHz
1
16
2
15
14
3
14
13
4
16
1.0 nF
15
2
1.2 kΩ
18 pF
3
4
TSA5060A
13
TSA5060A
5
12
5
12
6
11
6
11
7
10
7
10
8
9
8
9
FCE720
Fig.5 Application for using one crystal with two TSA5060As.
The best way to avoid any I2C-bus crosstalk in the
application (i.e. parasitic coupling between the I2C-bus
lines and the VCO coil) is to avoid the I2C-bus signal to
come in the RF part by using an I2C-bus gate that allows
only the messages for the PLL to go to the PLL and to
avoid unnecessary repeated sending. Such a gate is
integrated in most of the Philips digital demodulators.
I2C-bus crosstalk
The TSA5060A includes a loop amplifier that requires an
external NPN transistor. Care should be taken in the layout
of the application to ground the emitter of the NPN
transistor as close as possible to the ground of the VCO.
2000 Oct 24
16
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
TSA5060A
RF input impedance
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
0.2
0.5
1
2
5
64 MHz
∞
10
−j
10
1.3 GHz
5
0.2
2
0.5
1
Fig.6 RF input impedance.
2000 Oct 24
17
FCE721
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
TSA5060A
PACKAGE OUTLINES
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A
X
c
y
HE
v M A
Z
16
9
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
1
L
8
e
0
detail X
w M
bp
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25
0.25
0.1
0.7
0.3
0.01
0.019 0.0100 0.39
0.014 0.0075 0.38
0.16
0.15
0.244
0.050
0.041
0.228
0.039
0.016
0.028
0.020
inches
0.010 0.057
0.069
0.004 0.049
0.01
0.01
0.028
0.004
0.012
θ
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT109-1
076E07
MS-012
2000 Oct 24
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-05-22
99-12-27
18
o
8
0o
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
TSA5060A
SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm
D
SOT369-1
E
A
X
c
y
HE
v M A
Z
9
16
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
8
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.5
0.15
0.00
1.4
1.2
0.25
0.32
0.20
0.25
0.13
5.30
5.10
4.5
4.3
0.65
6.6
6.2
1.0
0.75
0.45
0.65
0.45
0.2
0.13
0.1
0.48
0.18
10
0o
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
SOT369-1
2000 Oct 24
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
95-02-04
99-12-27
MO-152
19
o
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
SOLDERING
TSA5060A
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
Manual soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2000 Oct 24
20
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
TSA5060A
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
REFLOW(1)
WAVE
BGA, SQFP
not suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not
PLCC(3), SO, SOJ
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
suitable
suitable(2)
suitable
suitable
suitable
not
recommended(3)(4)
suitable
not
recommended(5)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2000 Oct 24
21
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
TSA5060A
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
PURCHASE OF PHILIPS I2C COMPONENTS
Purchase of Philips I2C components conveys a license under the Philips’ I2C patent to use the
components in the I2C system provided the system conforms to the I2C specification defined by
Philips. This specification can be ordered using the code 9398 393 40011.
2000 Oct 24
22
Philips Semiconductors
Product specification
1.3 GHz I2C-bus controlled low phase
noise frequency synthesizer
NOTES
2000 Oct 24
23
TSA5060A
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
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Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
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Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
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Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
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Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
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Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. +66 2 361 7910, Fax. +66 2 398 3447
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
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SCA 70
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753504/03/pp24
Date of release: 2000
Oct 24
Document order number:
9397 750 07654