PHILIPS UMA1021AM

INTEGRATED CIRCUITS
DATA SHEET
UMA1021AM
Low-voltage frequency synthesizer
for radio telephones
Product specification
Supersedes data of 1998 Mar 03
File under Integrated Circuits, IC17
1998 Nov 19
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer for
radio telephones
UMA1021AM
The device is designed to operate from 3 NiCd cells, in
pocket phones, with low current and nominal 3 V supplies.
FEATURES
• Low phase noise
The synthesizer operates at RF input frequencies
up to 2.2 GHz with a fully programmable reference divider.
All divider ratios are supplied via a 3-wire serial
programming bus.
• Low current from 3 V supply
• Fully programmable main divider
• 3-line serial interface bus
• Independent fully programmable reference divider,
driven from external crystal oscillator
Separate power and ground pins are provided to the
analog (charge pump) and digital circuits. The ground
leads should be externally short-circuited to prevent large
currents flowing across the die and thus causing damage.
VDD1 and VDD2 must also be at the same potential (VDD).
VCC must be equal to or greater than VDD for wider control
range of the Voltage Controlled Oscillator (VCO),
e.g. VDD = 3 V and VCC = 5 V.
• Hard and soft power-down control.
APPLICATIONS
• 900 MHz and 2 GHz mobile telephones
• Portable battery-powered radio equipment.
The charge pump current (phase detector gain) is fixed by
an external resistor at pin ISET and controlled via the serial
interface. Only a passive loop filter is necessary; the
charge pump functions within a wide voltage compliance
range to improve the overall system performance.
GENERAL DESCRIPTION
The UMA1021AM BICMOS device integrates a prescaler,
programmable dividers, and a phase comparator to
implement a phase-locked loop.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2.7
−
5.5
V
analog supply voltage for charge pump VCC ≥ VDD
2.7
−
5.5
V
total supply current (IDD + ICC)
VCC = VDD = 5.5 V
−
10
−
mA
Itot(pd)
total supply current in Power-down
mode (IDD + ICC)
logic levels 0 V or VDD
−
5
−
µA
fRF
RF input frequency
300
−
2200
MHz
fxtal
crystal reference oscillator input
frequency
3
−
35
MHz
fph(comp)
phase comparator frequency
−
200
−
kHz
Tamb
operating ambient temperature
−30
−
+85
°C
VDD1, VDD2
digital supply voltage
VCC
Itot
VDD1 = VDD2 = VDD
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
UMA1021AM
1998 Nov 19
SSOP16
DESCRIPTION
plastic shrink small outline package; 16 leads; body width
4.4 mm
2
VERSION
SOT369-1
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer for
radio telephones
UMA1021AM
BLOCK DIAGRAM
handbook, full pagewidth
LOCK
1
2
CP
VDD2
UMA1021AM
16
BAND GAP
CHARGE PUMP
3
15
PHASE COMPARATOR
VSS3
14
4
5
RFI
VSS2
MAIN DIVIDER
WITH
PRESCALER
13
REFERENCE
DIVIDER
12
6
to charge pump
11
PON
7
SERIAL INTERFACE
10
9
VSS1
ISET
VCC
GND(CP)
XTAL
VDD1
E
DATA
CLK
8
MGL406
Fig.1 Block diagram.
PINNING
SYMBOL
LOCK
PIN
1
DESCRIPTION
out-of-lock detector output
CP
2
charge pump output
VDD2
3
digital supply voltage
VSS3
4
ground 3 (0 V)
RFI
5
2 GHz main divider input
VSS2
6
ground 2 (0 V)
PON
7
power-on input
VDD2 3
VSS1
8
ground 1 (0 V)
VSS3 4
CLK
9
programming bus clock input
DATA
10
programming bus data input
E
11
programming bus enable input
(active LOW)
VDD1
12
digital supply voltage
XTAL
13
crystal frequency input
GND(CP)
14
ground for charge pump
VCC
15
analog supply voltage for charge
pump
ISET
16
charge pump current setting with
external resistor from this pin to
ground
1998 Nov 19
handbook, halfpage
LOCK 1
16 ISET
CP 2
15 VCC
14 GND(CP)
13 XTAL
UMA1021AM
12 VDD1
RFI 5
11 E
VSS2 6
PON 7
10 DATA
VSS1 8
9 CLK
MGL405
Fig.2 Pin configuration.
3
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer for
radio telephones
UMA1021AM
The 3 lines are DATA (data bits), CLK (clock pulses) and
E (enable signal). The data sent to the device is loaded in
bursts framed by E. Programming clock edges and their
appropriate data bits are ignored until E goes active LOW.
The programmed information is loaded into the addressed
latch when E returns HIGH. During normal operation,
E should be kept HIGH. Only the last 21 bits serially
clocked into the device are retained within the
programming register. Additional leading bits are ignored,
and no check is made on the number of clock pulses.
The fully static CMOS design uses virtually no current
when the programming bus is inactive. It can always
capture new programmed data even during power-down.
FUNCTIONAL DESCRIPTION
Main divider
The main divider is clocked at pin RFI by the RF signal
which is AC-coupled from an external VCO. The divider
operates with signal levels from 50 to 225 mV (RMS) and
at frequencies from 300 MHz to 2.2 GHz. It consists of a
fully programmable bipolar prescaler followed by a CMOS
counter. The main divider allows programmable ratios
from 512 to 131071 inclusive.
Reference divider
The reference divider is clocked by the signal at pin XTAL.
The applied input signal should be AC-coupled. The circuit
operates with levels from 50 up to 500 mV (RMS) and at
frequencies from 3 to 35 MHz. Any divide ratios from
8 to 2047 inclusive can be programmed.
When the synthesizer is switched on, the presence of a
signal at the reference divider input is required for correct
programming.
Data format
Phase comparator and charge pump
The data format is shown in Table 1. The first bit entered
is dt16, the last bit is ad0.
The phase detector is driven by the edges of the output
signals of the main and reference dividers. The detector
produces current pulses at pin CP. The pulse duration is
equal to the difference in time of arrival of the edges from
the two dividers. If the main divider edge arrives first,
pin CP sinks current. If the reference divider edge arrives
first, pin CP sources current.
The leading bits (dt16 to dt0) make up the data field.
The current at pin CP can be controlled via the serial
programming bus as a multiple of the reference current set
by an external pull-down resistor connected between
pin ISET and ground (see Table 2). Pin CP remains active
except in the Power-down mode.
The four trailing bits (ad3 to ad0) are the address field.
The UMA1021AM uses 4 of the 16 available addresses.
These are chosen for compatibility with other Philips
Semiconductors radio telephone ICs. The trailing address
bits are decoded on the rising edge of E. This produces an
internal load pulse to store the data in the addressed latch.
To avoid erroneous divider ratios, the load pulse is not
allowed during data reads by the frequency dividers. This
condition is guaranteed by respecting a minimum E pulse
width after data transfer.
Additional circuitry is included to ensure that the gain of the
phase detector remains linear even for small phase errors.
For the divider ratios, the first bits entered (PM16 and
PR10) are the Most Significant Bits (MSBs).
Out-of-lock detector
The test register (address 0000) does not normally need to
be programmed. However, if it is programmed all bits in the
data field should be set to logic 0.
The out-of-lock detector is enabled or disabled via the
serial interface by setting bit OOL (dt12) HIGH or LOW
(see Table 1). An open-drain transistor drives the output
pin LOCK. It is recommended to keep the sink current in
the LOW state below 400 µA by applying a pull-up resistor
from pin LOCK to the positive supply. When the out-of-lock
detector is enabled pin LOCK is HIGH if the error at the
phase detector input is less than approximately 25 ns,
otherwise pin LOCK is LOW. If the out-of-lock detector is
disabled, pin LOCK remains HIGH.
Power-down mode
The synthesizer is switched on when both the power-on
input (PON) and the programmed bit dt6 (sPON) are
HIGH. When switched on, the dividers and phase detector
are synchronized to avoid random phase errors. When
switched off, the phase detector is synchronized to avoid
interrupting of the charge pump pulses.
The UMA1021AM has a very low current consumption in
the Power-down mode.
Serial programming bus
A simple 3-line unidirectional serial bus is used to program
the circuit.
1998 Nov 19
4
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FIRST IN
REGISTER BIT ALLOCATION
LAST IN
DATA FIELD
dt16
dt15 dt14 dt13
dt12
dt11
dt10
dt9
ADDRESS
dt8 dt7
dt6
dt5 dt4 dt3 dt2 dt1
dt0
ad3
ad2
ad1
ad0
0
0
0
0
X
0
0
0
1
PM0
0
1
0
0
PR0
0
1
0
1
test bits; note 2
X
X
X
X
OOL(3)
X
X
X
X
X
CR1(4)
X
PR10(7)
PM16(6)
CR0
X
X
sPON(5)
X
X
X
main divider coefficient
X
reference divider coefficient
X
X
Notes
1. X = don’t care.
2. The test register (address 0000) should not be programmed with any other values except all zeros for normal operation.
3. Bit OOL sets the Out-Of-Lock detector (1 = enabled).
4. Bits CR1 and CR0 set the charge pump current ratio (see Table 2).
5. Bit sPON sets the software power-up for the synthesizer (see Table 3).
6. PM16 is the MSB of the main divider coefficient.
5
7. PR10 is the MSB of the reference divider coefficient.
Table 2
Charge pump current ratio; note 1
Table 3
BIT CR1
BIT CR0
CHARGE PUMP
CURRENT
0
0
0
1
1
1
Power-on programming
PIN PON(1)
BIT sPON(2)
SYNTHESIZER
STATE
10 × Iset
L
X
off
18 × Iset
X
0
off
0
13 × Iset
H
1
on
1
17 × Iset
Note
Notes
1. Signal level
a) L = LOW.
c) H = HIGH.
2. X = don’t care.
Product specification
b) X = don’t care.
UMA1021AM
V set
1. Reference current for charge pump: I set = ---------R set
Philips Semiconductors
Bit allocation; note 1
Low-voltage frequency synthesizer for
radio telephones
1998 Nov 19
Table 1
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer for
radio telephones
UMA1021AM
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDD1, VDD2
digital supply voltage
−0.3
+5.5
V
VCC
analog supply voltage for charge pump
−0.3
+5.5
V
∆VCC-DD
supply voltage difference
−0.3
+5.5
V
−0.3
VDD + 0.3
V
−0.3
VCC + 0.3
V
−0.3
+0.3
V
between the analog and digital supply
voltages
Vn
voltage
at pins 5, 7, 9, 10 and 11
at pins 1, 2, 13 and 16
∆VGND
difference in voltage between any of
pins GND(CP), VSS1, VSS2 and VSS3
Ptot
total power dissipation
−
85
mW
these pins should be
connected together
Tstg
storage temperature
−55
+125
°C
Tamb
operating ambient temperature
−30
+85
°C
Tj(max)
maximum junction temperature
−
150
°C
HANDLING
All pins withstand the ESD class 2 test in accordance with “EIA/JESD22-A114-A”.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
1998 Nov 19
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
in free air
6
VALUE
UNIT
142
K/W
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer for
radio telephones
UMA1021AM
CHARACTERISTICS
All values refer to the typical test and application diagram of Fig.5; VDD1 = VDD2 = 2.7 to 5.5 V; VCC = 2.7 to 5.5 V;
Tamb = 25 °C; unless otherwise specified. Characteristics for which only a typical value is given are not tested.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies; pins 3, 12 and 15
VDD1, VDD2
digital supply voltage
VDD1 = VDD2 = VDD
2.7
−
5.5
V
VCC
analog supply voltage for charge
pump
VCC ≥ VDD
2.7
−
5.5
V
IDD
total digital supply current of
synthesizer (IDD1 + IDD2)
VDD = 5.5 V
−
7
9.5
mA
ICC
analog supply current of charge
pump
VCC = 5.5 V;
Rset = 5.6 kΩ
−
3
3.8
mA
Itot(pd)
total supply current in
Power-down mode (IDD + ICC)
logic levels 0 V or VDD −
5
50
µA
300
−
2200
MHz
50
−
225
mV
512
−
131071
fRF = 1 GHz
−
750
−
Ω
fRF = 2 GHz
−
130
−
Ω
fRF = 1 GHz
−
0.5
−
pF
fRF = 2 GHz
−
1.5
−
pF
RF main divider input; pin 5
fRF
RF input frequency
VRF(rms)
input signal level (RMS value)
D/Dm
main divider ratio
Zi
input impedance (real part)
Ci
input capacitance
AC-coupled; series
resistance Rs = 50 Ω
Reference divider input; pin 13
fxtal
crystal reference oscillator input
frequency
3
−
35
MHz
Vxtal(rms)
sinusoidal input signal level
(RMS value)
50
−
500
mV
D/Dref
reference divider ratio
Zi
input impedance (real part)
fxtal = 13 MHz
−
10
−
kΩ
Ci
input capacitance
fxtal = 13 MHz
−
1.3
−
pF
8
2047
Phase comparator
fph(comp)
phase comparator frequency
−
200
−
kHz
floop(max)
maximum loop comparison
frequency
−
2000
−
kHz
Charge pump current setting; pin 16
Rset
external resistor
connected between
pin 16 and ground
5.6
−
12
kΩ
Vset
regulated voltage
Rset = 5.6 kΩ
−
1.2
−
V
1998 Nov 19
7
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer for
radio telephones
SYMBOL
PARAMETER
UMA1021AM
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Charge pump output; pin 2
Vo(compl)
compliance output voltage
Rset = 5.6 kΩ
0.4
−
VCC − 0.4 V
Io(err)
output current error
Rset = 5.6 kΩ
−25
−
+25
%
Io(match)
sink-to-source current matching
Rset = 5.6 kΩ
−
±5
−
%
IL
leakage current
Rset = 5.6 kΩ;
charge pump off;
Vo(compl) = 1⁄2VCC
−5
±1
+5
nA
N900
RF synthesizer’s contribution to
close-in phase noise of 900 MHz
VCO signal inside the closed loop
bandwidth
fxtal = 13 MHz;
Vxtal = 0 dBm;
fph(comp) = 200 kHz
−
−88
−
dBc/Hz
N1800
RF synthesizer’s contribution to
close-in phase noise of 1.8 GHz
VCO signal inside the closed loop
bandwidth
fxtal = 13 MHz;
Vxtal = 0 dBm;
fph(comp) = 200 kHz
−
−82
−
dBc/Hz
Phase noise
Interface logic inputs; pins 7, 9, 10 and 11
VIH
HIGH-level input voltage
0.7VDD
−
VDD + 0.3 V
VIL
LOW-level input voltage
−0.3
−
0.3VDD
V
Ii(bias)
input bias current
−5
−
+5
µA
Ci
input capacitance
−
2
−
pF
logic 1 or logic 0
Out-of-lock detector output; pin 1
VOL
LOW-level output voltage
open-drain output
−
−
0.3VDD
V
Eϕ(th)
threshold phase error
open-drain output
−
25
−
ns
1998 Nov 19
8
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer for
radio telephones
UMA1021AM
SERIAL BUS TIMING CHARACTERISTICS
VDD1 = VDD2 = VCC = 3 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Serial programming clock; CLK
tr
rise time
−
10
40
ns
tf
fall time
−
10
40
ns
Tcy
clock cycle time
100
−
−
ns
Enable programming; E
tSTART
delay to rising clock edge
40
−
−
ns
tEND
delay from last falling clock edge
−20
−
−
ns
tW
minimum inactive pulse width
4000
−
−
ns
tSU;E
enable set-up time to next clock edge
20
−
−
ns
note 1
Register serial input data; DATA
tSU;DAT
input data to clock set-up time
20
−
−
ns
tHD;DAT
input data to clock hold time
20
−
−
ns
Note
1. The minimum pulse width (tW) can be smaller than 4000 ns when the both conditions are fulfilled:
447
a) Main divider input frequency: f RF > ---------tW
3
b) Reference divider input frequency: f xtal > -----tW
tSU;DAT
handbook, full pagewidth
tHD;DAT
tf
Tcy
tEND tSU;E
tr
CLK
DATA
MSB
LSB
ADDRESS
E
tSTART
MBG368
Fig.3 Serial bus timing diagram.
1998 Nov 19
9
tW
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer for
radio telephones
UMA1021AM
APPLICATION INFORMATION
handbook, full pagewidth
power
amplifier
transmit
data
PLL
SPLITTER
VCO
LPF
transmit
mixer
MAIN
DIVIDER
duplex
filter
REFERENCE
DIVIDER
TCXO
PHASE
COMPARATOR
AND
CHARGE PUMP
UMA1021AM
low noise
amplifier
MGL407
to demodulation
1st mixer
2nd mixer
Fig.4 Typical application block diagram.
1998 Nov 19
10
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer for
radio telephones
UMA1021AM
positive supply
positive supply
handbook, full pagewidth
LOCK
1
16
ISET
5.6 kΩ
12 Ω
100
nF
(1)
4.7
µF
CP
(1)
(1)
(1)
VDD2
control
100 nF
VSS3
out
1 nF 18 Ω
15
12 Ω
(1)
RF VCO
2
56 pF
18 Ω
3
14
4
13
12 Ω
100 nF
GND(CP)
XTAL
100 nF
1 nF
12
5
VCC
VTCXO
GND
Vcontrol
fosc
UMA1021AM
RFI
12 Ω
12 Ω
VCC
VDD1
100 nF
18 Ω
56 Ω
VSS2
6
11
E
56 pF
positive supply
PON
to 1st mixer
10 DATA
7
1 kΩ
VSS1
8
9
CLK
12 Ω
12 Ω
3-wire bus
(1) Values depend on application.
Fig.5 Typical test and application diagram.
1998 Nov 19
11
12 Ω
MGL408
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer for
radio telephones
UMA1021AM
PACKAGE OUTLINE
SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm
D
SOT369-1
E
A
X
c
y
HE
v M A
Z
9
16
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
8
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.5
0.15
0.00
1.4
1.2
0.25
0.32
0.20
0.25
0.13
5.30
5.10
4.5
4.3
0.65
6.6
6.2
1.0
0.75
0.45
0.65
0.45
0.2
0.13
0.1
0.48
0.18
10
0o
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
94-04-20
95-02-04
SOT369-1
1998 Nov 19
EUROPEAN
PROJECTION
12
o
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer for
radio telephones
If wave soldering cannot be avoided, the following
conditions must be observed:
SOLDERING
Introduction
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
1998 Nov 19
UMA1021AM
13
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer for
radio telephones
UMA1021AM
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Nov 19
14
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer for
radio telephones
NOTES
1998 Nov 19
15
UMA1021AM
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
435102/750/02/pp16
Date of release: 1998 Nov 19
Document order number:
9397 750 04261