DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure provides high emitter efficiency • Gold metallization with barrier realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and reduces thermal resistance • Internal input and output prematching networks allow an easier design of circuits. RX1214B80W; RX1214B130Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier. CONDITIONS f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) tp = 500 µs; δ = 10% 1.2 to 1.4 40 ≥80 ≥7 ≥35 Class C tp = 150 µs; RX1214B130Y δ = 5% 1.2 to 1.4 50 ≥130 ≥7 ≥35 MODE OF OPERATION Class C RX1214B80W PINNING - SOT439A PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange APPLICATIONS Common-base class C broadband pulsed power amplifiers for radar applications in the 1.2 to 1.4 GHz band. Also suitable for long pulse, heavy duty operation within this band. DESCRIPTION 1 handbook, 4 columns c b 3 3 e 2 NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. MAM045 Top view Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 14 2 Philips Semiconductors Product specification NPN microwave power transistors RX1214B80W; RX1214B130Y LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 65 V VCEO collector-emitter voltage open base − 15 V VCES collector-emitter voltage RBE = 0 Ω − 60 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) tp ≤ 150 µs; δ ≤ 5% − 9 A Ptot total power dissipation Tmb < 75 °C; tp ≤ 150 µs; δ ≤ 5% − 280 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C t ≤ 10 s; note 1 Note 1. Up to 0.2 mm from ceramic. MGA256 300 handbook, halfpage Ptot (W) 200 100 0 −50 50 150 Tmb (oC) 250 tp = 150 µs; δ = 5%; Ptot max = 280 W. Fig.2 Maximum power dissipation derating as a function of mounting base temperature. 1997 Feb 14 3 Philips Semiconductors Product specification NPN microwave power transistors RX1214B80W; RX1214B130Y THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj = 120 °C 1.75 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 0.2 K/W Zth j-h thermal impedance from junction to heatsink 0.4 K/W MAX. UNIT tp = 150 µs; δ = 5%; notes 1 and 2 Notes 1. See “Mounting recommendations in the General part of handbook SC19a”. 2. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. ICBO collector cut-off current IE = 0; VCB = 50 V − 6 mA IEBO emitter cut-off current IC = 0; VEB = 1.5 V − 0.6 mA V(BR)CES collector-emitter breakdown voltage IC = 60 mA; VBE = 0 60 − V APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common-base test circuit as shown in Fig.3. f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) tp = 150 µs; δ = 5% 1.2 to 1.4 50 ≥130; typ. 140 ≥7; typ. 7.5 ≥35; typ. 39 tp = 500 µs; δ = 10% 1.2 to 1.4 40 typ. 80 typ. 8.5 typ. 40 MODE OF OPERATION Class C CONDITIONS List of components (see Fig.3) COMPONENT DESCRIPTION L1 0.5 mm copper wire C1 trimmer capacitor C2 chip capacitor C3 tantalum capacitor C4 feedthrough bypass capacitor 1997 Feb 14 VALUE DIMENSIONS CATALOGUE NO. total length = 15 mm 0.6 − 5 pF Tekelec, ref AT3-7271SL 10 µF, 50 V Erie, ref.1250-003 4 Philips Semiconductors Product specification NPN microwave power transistors RX1214B80W; RX1214B130Y 30 mm handbook, full pagewidth 30 mm 40 mm 40 mm MBC725 C4 handbook, full pagewidth C3 L1 input output C2 C1 MBC726 10.3 Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.3 Broadband test circuit. 1997 Feb 14 5 Philips Semiconductors Product specification NPN microwave power transistors RX1214B80W; RX1214B130Y MGA258 MGA257 handbook,10 halfpage handbook,45 halfpage ηC Gp (dB) (%) 9 43 8 41 7 39 6 37 5 1.1 1.2 1.3 35 1.1 1.5 1.4 f (GHz) 1.3 1.4 1.5 f (GHz) Class C pulse operation; tp = 500 µs; δ = 5%. VCC = 50 V; PO = 130 W. Broadband test circuit as shown in Fig.3. Class C pulse operation; tp = 500 µs; δ = 5%. VCC = 50 V; PO = 130 W. Broadband test circuit as shown in Fig.3. Fig.5 Fig.4 Power gain as a function of frequency. 1997 Feb 14 1.2 6 Collector efficiency as a function of frequency. Philips Semiconductors Product specification NPN microwave power transistors RX1214B80W; RX1214B130Y 1 handbook, full pagewidth 0.5 2 0.2 1.2 GHz 5 Zi 10 + j 0.2 0 0.5 1.3 1 2 5 10 ∞ 1.4 GHz – j 10 0.2 5 0.5 2 1 MGA255 VCC = 50 V; ZO = 10 Ω; POUT = 130 W. Fig.6 Input impedance as a function of frequency, associated with optimum load impedance. 1 handbook, full pagewidth 0.5 0.2 0 5 ZL 1.4 GHz +j 2 0.2 1.3 10 0.5 1 2 5 10 ∞ 1.2 GHz –j 10 5 0.2 0.5 2 1 MGA254 VCC = 50 V; ZO = 10 Ω; POUT = 130 W. Fig.7 Load impedance as a function of frequency, associated with optimum input impedance. 1997 Feb 14 7 Philips Semiconductors Product specification NPN microwave power transistors RX1214B80W; RX1214B130Y PACKAGE OUTLINE 12.85 max handbook, full pagewidth 0.15 max 6 max 3.3 2.9 1.6 max 3 23 max seating plane 3.7 max 2.7 min 1 9.85 max 3.3 2.7 min 2 MBC881 8.25 16.5 Dimensions in mm. Torque on nut: max 0.4 Nm. Recommended screw: M3. Recommended pitch for mounting screw: 19 mm. Fig.8 SOT439A. 1997 Feb 14 8 10.3 10.0 Philips Semiconductors Product specification NPN microwave power transistors RX1214B80W; RX1214B130Y DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 14 9 Philips Semiconductors Product specification NPN microwave power transistors RX1214B80W; RX1214B130Y NOTES 1997 Feb 14 10 Philips Semiconductors Product specification NPN microwave power transistors RX1214B80W; RX1214B130Y NOTES 1997 Feb 14 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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