PHILIPS MX1011B700Y

DISCRETE SEMICONDUCTORS
DATA SHEET
MX1011B700Y
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
• Suitable for short and medium
pulse applications up to
100 µs/10%
• Internal input and output
prematching networks allow an
easier design of circuits
• Diffused emitter ballasting resistors
improve ruggedness
• Interdigitated emitter-base
structure provides high emitter
efficiency
• Gold metallization with barrier
realizes very good stability of the
characteristics and excellent
lifetime
MX1011B700Y
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common base class C
broadband amplifier.
MODE OF
OPERATION
CONDITIONS
tp = 10 µs;
δ = 1%
Class C
f
(GHz)
VCC
(V)
1.09
50
PL
(W)
650
GP
(dB)
≥6
ηC
(%)
≥48
PINNING - SOT439A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
• Multicell geometry improves power
sharing and reduces thermal
resistance.
APPLICATIONS
1
handbook, 4 columns
Intended for use in common base,
class C, broadband, pulsed power
amplifiers for IFF, TCAS and Mode S
applications in the 1030 to 1090 MHz
band. Also suitable for medium pulse,
heavy duty operation within the
1030 to 1150 MHz band.
c
b
3
3
e
2
MAM045
Top view
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package with base connected to
flange.
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
MX1011B700Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
65
V
VCEO
collector-emitter voltage
open base
−
15
V
VCES
collector-emitter voltage
RBE = 0 Ω
−
65
V
VEBO
emitter-base voltage
open collector
−
3
V
ICM
peak collector current
tp ≤ 10 µs; δ ≤ 1%
−
40
A
Ptot
total power dissipation
Tmb < 75 °C;
tp ≤ 10 µs; δ ≤ 1%
−
1365
W
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
t ≤ 10 s; note 1
Note
1. Up to 0.2 mm from ceramic.
MRA445
1600
handbook, halfpage
Ptot
(W)
1200
800
400
0
−50
0
50
100
150
200
Tmb (oC)
tp = 10 µs; δ = 1%; Ptot max = 1365 W.
Fig.2
Maximum power dissipation derating as a
function of mounting base temperature.
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
MX1011B700Y
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting base
Tj = 120 °C
1.12
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
note 1
0.2
K/W
Zth j-h
thermal impedance from junction to heatsink
tp = 10 µs; δ = 1%;
notes 1 and 2
0.06
K/W
MAX.
UNIT
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under nominal pulse microwave operating conditions.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector cut-off current
VCB = 50 V; IE = 0
20
mA
ICES
collector cut-off current
VCE = 50 V; VBE = 0
20
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
5
mA
V(BR)CBO
collector-base breakdown voltage
IC = 140 mA; VBE = 0
65
V
V(BR)CES
collector-emitter breakdown voltage
IC = 140 mA; VBE = 0
65
V
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a broadband test circuit as shown in Fig.3.
MODE OF OPERATION
Class C
1997 Feb 18
f
(GHz)
CONDITIONS
VCC
(V)
PL
(W)
GP
(dB)
ηC
(%)
tp = 10 µs; δ = 1%
1.09
50
650;
typ. 740
≥6.0;
typ. 7
≥48;
typ. 55
tp = 0.5 µs; δ = 50%;
tp = 112 µs; δ = 1%
1.03 to 1.09
50
typ. 650
typ. 6.4
typ. 45
tp = 6.6 µs; δ = 51%;
tp = 3.3 ms; δ = 43%
1.03 to 1.15
50
typ. 300
typ. 7
typ. 45
tp = 32 µs; δ = 1%
1.09
50
typ. 700
typ. 6.7
typ. 55
4
Philips Semiconductors
Product specification
NPN microwave power transistor
MX1011B700Y
30 mm
handbook, full pagewidth
17
30 mm
3
3
8
7
1
4
3
12
13
40 mm
2.5 1
10.5
40 mm
5
11
0.65
0.65
MCD495
handbook, full pagewidth
C3
VCC
C4
VCC
C2
input
L1
output
L3
C1
L2
C5
MCD496
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.3 Broadband test circuit.
1997 Feb 18
5
Philips Semiconductors
Product specification
NPN microwave power transistor
MX1011B700Y
List of components (see Fig.3)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
L1, L2
0.65 mm diameter copper wire
−
total length = 26 mm;
height of loop = 10 mm
−
L3
0.85 mm diameter silver wire
−
total length = 30 mm;
height of loop = 15 mm
−
C1
capacitor
100 pF
−
ATC, ref.100A101KP50X
C2
tantalum capacitor
10 µF; 50 V −
−
C3
electrolytic capacitor
1000 µF;
63 V
−
−
C4
feedthrough bypass capacitor
−
Erie, ref.1250-003
C5
variable gigatrim capacitor
−
Tekelec, ref.729.1
0.8 − 8 pF
MRA443
handbook, halfpage
ηC
(%)
PL
(W)
700
60
600
55
500
50
400
70
90
110
130
45
70
150
170
PIN (W)
90
110
130
PIN (W)
150
Class C pulse operation; tp = 10 µs; δ = 1%; VCC = 50 V;
f = 1.09 GHz; (In broadband test circuit as shown in Fig.3).
Class C pulse operation; tp = 10 µs; δ = 1%; VCC = 50 V;
f = 1.09 GHz; (In broadband test circuit as shown in Fig.3).
Fig.5
Fig.4 Load power as a function of input power.
1997 Feb 18
MRA444
65
handbook,800
halfpage
6
Collector efficiency as a function of
input power.
Philips Semiconductors
Product specification
NPN microwave power transistor
MX1011B700Y
1
handbook, full pagewidth
0.5
2
1 GHz
0.2
5
Zi
10
1.15 GHz
+j
0
0.2
0.5
1
2
5
10
∞
–j
–10
–5
–0.2
–2
–0.5
–1
MCD493
VCC = 50 V; ZO = 10 Ω; Po = 740 W.
Fig.6 Input impedance as a function of frequency, associated with optimum load impedance.
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
–j
0.2
1.15 GHz
–0.2
0.5
1
2
5
ZL
10
∞
–10
1 GHz
–5
–2
–0.5
–1
MCD494
VCC = 50 V; ZO = 10 Ω; Po = 740 W.
Fig.7 Optimum load impedance as a function of frequency; associated with input impedance.
1997 Feb 18
7
Philips Semiconductors
Product specification
NPN microwave power transistor
MX1011B700Y
PACKAGE OUTLINE
12.85 max
handbook, full pagewidth
0.15 max
6
max
3.3
2.9
1.6 max
3
23 max
seating plane
3.7
max
2.7
min
1
9.85
max
3.3
2.7
min
2
MBC881
8.25
16.5
Dimensions in mm.
Torque on screws: max. 0.4 Nm.
Recommended screw: M3.
Recommended pitch for mounting screws: 19 mm.
Fig.8 SOT439A.
1997 Feb 18
8
10.3
10.0
Philips Semiconductors
Product specification
NPN microwave power transistor
MX1011B700Y
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of this specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 18
9
Philips Semiconductors
Product specification
NPN microwave power transistor
MX1011B700Y
NOTES
1997 Feb 18
10
Philips Semiconductors
Product specification
NPN microwave power transistor
MX1011B700Y
NOTES
1997 Feb 18
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 18
Document order number:
9397 750 01711