DISCRETE SEMICONDUCTORS DATA SHEET LXE16350X NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS Common emitter class AB power amplifiers for military and professional applications at 1.65 GHz. LXE16350X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) ICQ (A) PL1 (W) Gpo (dB) Zi; ZL (Ω) Class AB (CW) 1.65 24 0.3 ≥32 ≥9 see Figs 8 and 9 PINNING - SOT439A PIN DESCRIPTION 1 collector 2 base 3 emitter connected to flange 1 andbook, 4 columns c b 3 3 e 2 DESCRIPTION MAM045 Top view NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic package, with emitter connected to flange. Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 19 2 Philips Semiconductors Product specification NPN microwave power transistor LXE16350X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 45 V VCER collector-emitter voltage RBE = 220 Ω − 30 V VCEO collector-emitter voltage open base − 20 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 6 A Ptot total power dissipation − 57 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C Tmb = 75 °C t ≤ 10 s; note 1 Note 1. Up to 0.2 mm from ceramic. MRA441 10 MRA442 100 handbook, halfpage handbook, halfpage Ptot (W) IC (A) 80 1 60 40 (1) 10−1 20 0 10−2 1 10 VCE (V) 0 102 Tmb ≤ 75 °C. (1) Region of permissible DC operation. 100 150 200 Tmb (oC) Ptot max = 57 W. Fig.3 Fig.2 DC SOAR. 1997 Feb 19 50 3 Maximum power dissipation derating as a function of mounting base temperature. Philips Semiconductors Product specification NPN microwave power transistor LXE16350X THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj = 100 °C 1.7 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 0.2 K/W Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. MAX. UNIT VCB = 20 V; IE = 0 − 3 mA VCB = 40 V; IE = 0 − 30 mA − 30 mA ICER collector cut-off current VCE = 30 V; RBE = 220 Ω ICEO collector cut-off current VCE = 20 V; IB = 0 − 30 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 − 300 µA hFE DC current gain VCE = 3 V; IC = 3 A 15 100 APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common-emitter class AB amplifier (note 1). MODE OF OPERATION f (GHz) VCE (V) ICQ (A) PL1 (W) Gpo (dB) Zi; ZL (Ω) Class AB (CW) 1.65 24 0.3 ≥32 typ. 35 ≥9 typ. 10 see Figs 8 and 9 Note 1. The test circuit is split into 2 independent halves each being 30 × 40 mm in size. List of components (see Fig 4). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. L1 5 turns 0.5 mm diameter copper wire with ferrite bead int. dia. 2 mm L2 5 turns 0.5 mm diameter copper wire int. dia. 2 mm C1, C4 DC blocking chip capacitor 100 pF C2, C3 trimmer capacitor 0.5 to 5 pF Tekelec C5, C6 feedthrough bypass capacitor 1500 pF Erie, ref. 1250-003 1997 Feb 19 4 Philips Semiconductors Product specification NPN microwave power transistor LXE16350X 30 mm handbook, full pagewidth 1 4 3 10 30 mm 5 6 6 4 5 2 3 2.5 1 0.8 0.8 10 10 10 40 mm 2 6 4 5 0.65 1.5 3.75 40 mm 3 1.5 MCD620 V BB handbook, full pagewidth VCC C5 C6 L1 input L2 output C4 C1 10 C2 4 5 3 C3 MCD621 Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.4 Prematching test circuit board. 1997 Feb 19 5 Philips Semiconductors Product specification NPN microwave power transistor LXE16350X BIAS CIRCUIT handbook, full pagewidth PREMATCHINGTEST CIRCUIT +VCC R1 C6 TR1 C5 R2 L2 L1 P1 D1 R3 D.U.T. C1 D2 0V MBC421 - 1 Fig.5 Class AB bias circuit at 1.65 GHz. List of components (see Fig 5) COMPONENT DESCRIPTION VALUE TR1 transistor, BDT85 (or equivalent) D1 diode, IN4148 (or equivalent); note 1 D2 diode, BY239800; note 2 R1 resistor 100 Ω R2 resistor 10 kΩ R3 resistor 56 Ω P1 potentiometer, 10 turns (sfernice) 4.7 kΩ C1 electrolytic capacitor 10 µF (>30 V) C5, C6 feedthrough bypass capacitor 1500 pF L1 5 turns 0.5 mm copper wire with ferrite bead L2 5 turns 0.5 mm copper wire Notes 1. In thermal contact with TR1. 2. In thermal contact with D.U.T. 1997 Feb 19 6 CATALOGUE NO. Erie, ref. 1250-003 Philips Semiconductors Product specification NPN microwave power transistor LXE16350X MRA440 40 MRA439 −15 handbook, halfpage handbook, halfpage PL (W) dim (dBc) (1) 30 −25 (1) (2) (3) 20 (2) −35 10 (3) −45 0 0 2 4 Pi (W) 0 6 20 Po (W) 30 VCE = 24 V. f1 = 1.65 GHz f2 = 1.6502 GHz. (1) ICQ = 10 mA. (2) ICQ = 100 mA. (3) ICQ = 300 mA. VCE = 24 V. (1) ICQ = 300 mA. (2) ICQ = 100 mA. (3) ICQ = 10 mA. Fig.7 Fig.6 Load power as a function of input power. 1997 Feb 19 10 7 Intermodulation distortion as a function of average output power. Philips Semiconductors Product specification NPN microwave power transistor LXE16350X 1 handbook, full pagewidth 0.5 2 Zi 0.2 5 1.65 10 + j 0.2 0 –j 1.75 1 0.5 2 5 10 ∞ 1.85 GHz 10 5 0.2 2 0.5 MBC422 1 VCE = 24 V; Zo = 10 Ω; ICQ = 0.3 A. Fig.8 Input impedance as a function of frequency; typical values. 1 handbook, full pagewidth 0.5 0.2 2 5 ZL 10 +j 0 0.2 0.5 1.85 GHz –j 1.75 1 2 5 10 ∞ 1.65 10 5 0.2 2 0.5 MBC423 1 VCE = 24 V; Zo = 10 Ω; ICQ = 0.3 A. Fig.9 Optimum load impedance as a function of frequency; typical values. 1997 Feb 19 8 Philips Semiconductors Product specification NPN microwave power transistor LXE16350X PACKAGE OUTLINE 12.85 max handbook, full pagewidth 0.15 max 6 max 3.3 2.9 1.6 max 3 23 max seating plane 3.7 max 2.7 min 1 9.85 max 3.3 2.7 min 2 MBC881 8.25 16.5 Dimensions in mm. Torque on screws: max. 0.4 Nm. Recommended screw: M3. Recommended pitch for mounting screw: 19 mm. Fig.10 SOT439A. 1997 Feb 19 9 10.3 10.0 Philips Semiconductors Product specification NPN microwave power transistor LXE16350X DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 19 10 Philips Semiconductors Product specification NPN microwave power transistor LXE16350X NOTES 1997 Feb 19 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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