IRF IRHG54110

PD - 94432A
IRHG57110
100V, Quad N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036)
®
™
RAD-Hard HEXFET
4# TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHG57110 100K Rads (Si)
RDS(on)
0.29Ω
ID
1.6A
IRHG53110
300K Rads (Si)
0.29Ω
1.6A
IRHG54110
600K Rads (Si)
0.29Ω
1.6A
0.31Ω
1.6A
IRHG58110 1000K Rads (Si)
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applications. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC converters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and temperature stability of electrical parameters.
MO-036AB
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings (Per Die)
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
1.6
1.0
6.4
1.4
0.011
±20
130
1.6
0.14
6.5
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
C
g
For footnotes refer to the last page
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1
08/01/02
IRHG57110
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
100
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Test Conditions
—
—
V GS = 0V, ID = 1.0mA
—
0.14
—
V/°C
—
—
0.29
Ω
2.0
1.0
—
—
—
—
—
—
4.0
—
10
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
17
4.4
3.9
21
16
30
15
—
V
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 1.0A ➃
V
S( )
nC
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 1.0A ➃
VDS= 80V, VGS= 0V
VDS = 80V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 1.6A,
VDS = 50V
ns
VDD = 50V, ID = 1.6A,
VGS =12V, RG = 7.5Ω
Ω
BVDSS
µA
nA
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
370
110
3.4
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
1.6
6.4
1.2
110
380
Test Conditions
A
V
nS
nC
Tj = 25°C, IS = 1.6A, VGS = 0V ➃
Tj = 25°C, IF = 1.6A, di/dt ≤ 100A/µs
VDD ≤ 25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
90
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Pre-Irradiation
IRHG57110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ (Per Die)
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Test Conditions
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Min Max
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-39)
Static Drain-to-Source ➃
On-State Resistance (MO-036AB)
Diode Forward Voltage ➃
100
2.0
—
—
—
—
—
4.0
100
-100
10
0.226
100
2.0
—
—
—
—
—
4.5
100
-100
25
0.246
nA
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 80V, VGS =0V
VGS = 12V, ID = 1.0A
—
0.29
—
0.31
Ω
VGS = 12V, ID = 1.0A
—
1.2
—
1.2
V
VGS = 0V, I S = 1.6A
V
1. Part number IRHG57110, IRHG53110, IRHG54110
2. Part number IRHG58110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
Energy
(MeV)
309
341
VDS
Br
I
LET
MeV/(mg/cm2))
36.7
59.8
VDS (V)
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-12.5V @VGS=-15V @VGS=-20V
80
39.5
100
100
100
100
100
32.5
100
100
100
90
25
20
120
100
80
60
40
20
0
Br
I
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHG57110
10
Pre-Irradiation
10
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
1
5.0V
0.1
0.1
20µs PULSE WIDTH
T = 25 C
10
100
Fig 1. Typical Output Characteristics
2.5
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
6.0
6.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150 ° C
4
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 150 C
T = 150 C
°
J
J
1
1
°
10
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
100
100
Fig 2. Typical Output Characteristics
10
5.5
5.0V
5.0V
1
1
0.1
0.10.1
0.1
VDS , Drain-to-Source Voltage (V)
0.1
5.0
VGS
VGS
15V
15V
12V
12V
10V
10V
9.0V
9.0V
8.0V
8.0V
7.0V
7.0V
6.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
TOP
TOP
°
J
1
I D, ,Drain-to-Source
Drain-to-SourceCurrent
Current(A)
(A)
ID
I D , Drain-to-Source Current (A)
TOP
ID = 1.6A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
600
Ciss
400
C
oss
200
Crss
20
VGS , Gate-to-Source Voltage (V)
800
C, Capacitance (pF)
IRHG57110
0
1
10
ID = 1.6A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
4
VDS , Drain-to-Source Voltage (V)
1
TJ = 25 ° C
V GS = 0 V
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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16
OPERATION IN THIS AREA LIMITED
BY R DS (on)
TJ = 150 ° C
ID , Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
10
0.8
12
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
0.6
8
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0.1
0.4
VDS = 80V
VDS = 50V
VDS = 20V
1.4
1
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHG57110
Pre-Irradiation
1.6
RD
VDS
VGS
I D , Drain Current (A)
1.3
D.U.T.
RG
+
-V DD
VGS
1.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.6
Fig 10a. Switching Time Test Circuit
VDS
0.3
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA)
D = 0.50
0.20
0.10
10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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Pre-Irradiation
IRHG57110
1 5V
D R IV E R
L
VDS
D .U .T.
RG
IA S
2V
0 VGS
tp
+
V
- DD
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
300
TOP
250
BOTTOM
200
150
100
50
0
25
V (B R )D SS
ID
0.7A
1.0A
1.6A
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHG57110
Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 25V, starting TJ = 25°C, L= 100mH,
Peak IL = 1.6A, VGS =12V
➂ I SD ≤ 1.6A, di/dt ≤ 340A/µs,
VDD ≤ 100V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
➅ Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
Case Outline and Dimensions — MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 08/02
8
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