PHILIPS 74AVC2T45GT

74AVC2T45
Dual-bit, dual-supply voltage level translator/transceiver;
3-state
Rev. 04 — 5 May 2009
Product data sheet
1. General description
The 74AVC2T45 is a dual-bit, dual-supply transceiver that enables bidirectional level
translation. It features two data input-output ports (nA and nB), a direction control input
(DIR) and dual-supply pins (VCC(A) and VCC(B)). Both VCC(A) and VCC(B) can be supplied at
any voltage between 0.8 V and 3.6 V making the device suitable for translating between
any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins nA and DIR
are referenced to VCC(A) and pins nB are referenced to VCC(B). A HIGH on DIR allows
transmission from nA to nB and a LOW on DIR allows transmission from nB to nA.
The device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing any damaging backflow current through the
device when it is powered down. In Suspend mode when either VCC(A) or VCC(B) are at
GND level, both A and B are in the high-impedance OFF-state.
2. Features
n Wide supply voltage range:
u VCC(A): 0.8 V to 3.6 V
u VCC(B): 0.8 V to 3.6 V
n High noise immunity
n Complies with JEDEC standards:
u JESD8-12 (0.8 V to 1.3 V)
u JESD8-11 (0.9 V to 1.65 V)
u JESD8-7 (1.2 V to 1.95 V)
u JESD8-5 (1.8 V to 2.7 V)
u JESD8-B (2.7 V to 3.6 V)
n ESD protection:
u HBM JESD22-A114E Class 3B exceeds 8000 V
u MM JESD22-A115-A exceeds 200 V
u CDM JESD22-C101C exceeds 1000 V
n Maximum data rates:
u 500 Mbit/s (1.8 V to 3.3 V translation)
u 320 Mbit/s (< 1.8 V to 3.3 V translation)
u 320 Mbit/s (translate to 2.5 V or 1.8 V)
u 280 Mbit/s (translate to 1.5 V)
u 240 Mbit/s (translate to 1.2 V)
n Suspend mode
n Latch-up performance exceeds 100 mA per JESD 78 Class II
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
n
n
n
n
n
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
Multiple package options
Specified from −40 °C to +85 °C and −40 °C to +125 °C
3. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range Name
Description
Version
74AVC2T45DP
−40 °C to +125 °C
TSSOP8
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
SOT505-2
74AVC2T45DC
−40 °C to +125 °C
VSSOP8
plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
74AVC2T45GT
−40 °C to +125 °C
XSON8
plastic extremely thin small outline package; no leads; SOT833-1
8 terminals; body 1 × 1.95 × 0.5 mm
74AVC2T45GD
−40 °C to +125 °C
XSON8U
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; UTLP based; body 3 × 2 × 0.5 mm
4. Marking
Table 2.
Marking
Type number
Marking code[1]
74AVC2T45DP
B45
74AVC2T45DC
B45
74AVC2T45GT
B45
74AVC2T45GD
B45
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
2 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
5. Functional diagram
DIR
5
DIR
1A
2
1A
7
1B
1B
2A
3
2A
6
2B
2B
VCC(A)
VCC(B)
VCC(A)
VCC(B)
001aag577
Fig 1.
001aag578
Logic symbol
Fig 2.
Logic diagram
6. Pinning information
6.1 Pinning
74AVC2T45
VCC(A)
1
8
VCC(B)
1A
2
7
1B
2A
3
6
2B
GND
4
5
DIR
001aag579
Fig 3.
Pin configuration SOT505-2 (TSSOP8) and SOT765-1 (VSSOP8)
74AVC2T45
VCC(A)
1
8
VCC(B)
1A
2
7
1B
2A
3
6
2B
GND
4
5
74AVC2T45
VCC(A)
1
8
VCC(B)
1A
2
7
1B
2A
3
6
2B
GND
4
5
DIR
DIR
001aag580
001aai261
Transparent top view
Fig 4.
Pin configuration SOT833-1 (XSON8)
Transparent top view
Fig 5.
74AVC2T45_4
Product data sheet
Pin configuration SOT996-2 (XSON8U)
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
3 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
6.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
VCC(A)
1
supply voltage A (referenced to pins 1A, 2A and DIR)
1A
2
data input or output
2A
3
data input or output
GND
4
ground (0 V)
DIR
5
direction control
2B
6
data input or output
1B
7
data input or output
VCC(B)
8
supply voltage B (referenced to pins 1B and 2B)
7. Functional description
Table 4.
Function table[1]
Supply voltage
Input
Input/output[2]
VCC(A), VCC(B)
DIR[3]
nA
nB
0.8 V to 3.6 V
L
nA = nB
input
0.8 V to 3.6 V
H
input
nB = nA
GND[4]
X
Z
Z
[1]
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
[2]
The input circuit of the data I/O is always active.
[3]
The DIR input circuit is referenced to VCC(A).
[4]
If at least one of VCC(A) or VCC(B) is at GND level, the device goes into Suspend mode.
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
4 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC(A)
supply voltage A
VCC(B)
supply voltage B
IIK
input clamping current
VI
input voltage
IOK
output clamping current
output voltage
VO
Conditions
VI < 0 V
[1]
Suspend or 3-state mode
Max
Unit
−0.5
+4.6
V
−0.5
+4.6
V
−50
-
mA
−0.5
+4.6
V
mA
−50
-
[1][2][3]
−0.5
VCCO + 0.5
V
[1]
−0.5
+4.6
V
VO < 0 V
Active mode
Min
IO
output current
VO = 0 V to VCCO
-
±50
mA
ICC
supply current
ICC(A) or ICC(B)
-
100
mA
IGND
ground current
−100
-
mA
Tstg
storage temperature
−65
+150
°C
-
250
mW
total power dissipation
Ptot
[1]
Tamb = −40 °C to +125 °C
[4]
The minimum input voltage rating and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
VCCO is the supply voltage associated with the output port.
[3]
VCCO + 0.5 V should not exceed 4.6 V.
[4]
For TSSOP8 package: above 55 °C the value of Ptot derates linearly at 2.5 mW/K.
For VSSOP8 package: above 110 °C the value of Ptot derates linearly with 8 mW/K.
For XSON8 and XSON8U packages: above 118 °C the value of Ptot derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Symbol
Parameter
Min
Max
Unit
VCC(A)
supply voltage A
0.8
3.6
V
VCC(B)
supply voltage B
0.8
3.6
V
VI
input voltage
0
3.6
V
0
VCCO
V
0
3.6
V
−40
+125
°C
-
5
ns/V
output voltage
VO
Conditions
Active mode
[1]
Suspend or 3-state mode
Tamb
∆t/∆V
ambient temperature
input transition rise and fall rate
VCCI = 0.8 V to 3.6 V
[1]
VCCO is the supply voltage associated with the output port.
[2]
VCCI is the supply voltage associated with the input port.
74AVC2T45_4
Product data sheet
[2]
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
5 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V). All unused data inputs of the device
must be held at VCCI or GND to ensure proper device operation.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
-
0.69
-
V
Tamb = 25 °C
HIGH-level output
voltage
VI = VIH
VOL
LOW-level output
voltage
VI = VIL
II
input leakage
current
DIR input; VI = GND to VCC(A);
VCC(A) = VCC(B) = 0.8 V to 3.6 V
IOZ
OFF-state output
current
A or B port; VO = GND or VCCO;
VCC(A) = VCC(B) = 0.8 V to 3.6 V
IOFF
power-off leakage
current
VOH
IO = −1.5 mA; VCC(A) = VCC(B) = 0.8 V
IO = 1.5 mA; VCC(A) = VCC(B) = 0.8 V
-
0.07
-
V
-
±0.025
±0.25
µA
-
±0.5
±2.5
µA
A port; VI or VO = 0 V to 3.6 V;
VCC(A) = 0 V; VCC(B) = 0.8 V to 3.6 V
-
±0.1
±1.0
µA
B port; VI or VO = 0 V to 3.6 V;
VCC(B) = 0 V; VCC(A) = 0.8 V to 3.6 V
-
±0.1
±1.0
µA
-
1.0
-
pF
-
4.0
-
pF
VCCI = 0.8 V
0.7VCCI
-
-
V
VCCI = 1.1 V to 1.95 V
0.65VCCI
-
-
V
VCCI = 2.3 V to 2.7 V
1.6
-
-
V
2.0
-
-
V
VCCI = 0.8 V
0.7VCC(A)
-
-
V
VCCI = 1.1 V to 1.95 V
0.65VCC(A)
-
-
V
VCCI = 2.3 V to 2.7 V
1.6
-
-
V
2.0
-
-
V
VCCI = 0.8 V
-
-
0.3VCCI
V
VCCI = 1.1 V to 1.95 V
-
-
0.35VCCI
V
VCCI = 2.3 V to 2.7 V
-
-
0.7
V
VCCI = 3.0 V to 3.6 V
-
-
0.9
V
VCCI = 0.8 V
-
-
0.3VCC(A)
V
VCCI = 1.1 V to 1.95 V
-
-
0.35VCC(A)
V
VCCI = 2.3 V to 2.7 V
-
-
0.7
V
VCCI = 3.0 V to 3.6 V
-
-
0.9
V
[1]
CI
input capacitance
DIR input; VI = GND or 3.3 V;
VCC(A) = VCC(B) = 3.3 V
CI/O
input/output
capacitance
A and B port; Suspend mode;
VO = VCCO or GND;
VCC(A) = VCC(B) = 3.3 V
[1]
data input
[2]
Tamb = −40 °C to +85 °C
VIH
HIGH-level input
voltage
VCCI = 3.0 V to 3.6 V
[2]
DIR input
VCCI = 3.0 V to 3.6 V
VIL
LOW-level input
voltage
[2]
data input
[2]
DIR input
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
6 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V). All unused data inputs of the device
must be held at VCCI or GND to ensure proper device operation.
Symbol Parameter
Conditions
VOH
VI = VIH
VOL
HIGH-level output
voltage
LOW-level output
voltage
Min
Typ
Max
Unit
VCCO − 0.1
-
-
V
IO = −3 mA; VCC(A) = VCC(B) = 1.1 V
0.85
-
-
V
IO = −6 mA; VCC(A) = VCC(B) = 1.4 V
1.05
-
-
V
IO = −100 µA;
VCC(A) = VCC(B) = 0.8 V to 3.6 V
[1]
IO = −8 mA; VCC(A) = VCC(B) = 1.65 V
1.2
-
-
V
IO = −9 mA; VCC(A) = VCC(B) = 2.3 V
1.75
-
-
V
IO = −12 mA; VCC(A) = VCC(B) = 3.0 V
2.3
-
-
V
IO = 100 µA;
VCC(A) = VCC(B) = 0.8 V to 3.6 V
-
-
0.1
V
IO = 3 mA; VCC(A) = VCC(B) = 1.1 V
-
-
0.25
V
IO = 6 mA; VCC(A) = VCC(B) = 1.4 V
-
-
0.35
V
VI = VIL
IO = 8 mA; VCC(A) = VCC(B) = 1.65 V
-
-
0.45
V
IO = 9 mA; VCC(A) = VCC(B) = 2.3 V
-
-
0.55
V
IO = 12 mA; VCC(A) = VCC(B) = 3.0 V
-
-
0.7
V
-
-
±1.0
µA
-
-
±5.0
µA
II
input leakage
current
DIR input; VI = GND to VCC(A);
VCC(A) = VCC(B) = 0.8 V to 3.6 V
IOZ
OFF-state output
current
A or B port; VO = GND or VCCO;
VCC(A) = VCC(B) = 0.8 V to 3.6 V
IOFF
power-off leakage
current
A port; VI or VO = 0 V to 3.6 V;
VCC(A) = 0 V; VCC(B) = 0.8 V to 3.6 V
-
-
±5.0
µA
B port; VI or VO = 0 V to 3.6 V;
VCC(B) = 0 V; VCC(A) = 0.8 V to 3.6 V
-
-
±5.0
µA
VCC(A) = 0.8 V to 3.6 V;
VCC(B) = 0.8 V to 3.6 V
-
-
8.0
µA
VCC(A) = 3.6 V; VCC(B) = 0 V
-
-
8.0
µA
−2
0
-
µA
VCC(A) = 0.8 V to 3.6 V;
VCC(B) = 0.8 V to 3.6 V
-
-
8.0
µA
VCC(A) = 3.6 V; VCC(B) = 0 V
−2
0
-
µA
ICC
supply current
A port; VI = GND or VCCI; IO = 0 A
[1]
[2]
VCC(A) = 0 V; VCC(B) = 3.6 V
B port; VI = GND or VCCI; IO = 0 A
[2]
VCC(A) = 0 V; VCC(B) = 3.6 V
A plus B port (ICC(A) + ICC(B)); IO = 0 A;
VI = GND or VCCI;
VCC(A) = 0.8 V to 3.6 V;
VCC(B) = 0.8 V to 3.6 V
74AVC2T45_4
Product data sheet
[2]
-
-
8.0
µA
-
-
16
µA
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
7 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V). All unused data inputs of the device
must be held at VCCI or GND to ensure proper device operation.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VCCI = 0.8 V
0.7VCCI
-
-
V
VCCI = 1.1 V to 1.95 V
0.65VCCI
-
-
V
VCCI = 2.3 V to 2.7 V
1.6
-
-
V
2.0
-
-
V
VCCI = 0.8 V
0.7VCC(A)
-
-
V
VCCI = 1.1 V to 1.95 V
0.65VCC(A)
-
-
V
VCCI = 2.3 V to 2.7 V
1.6
-
-
V
VCCI = 3.0 V to 3.6 V
2.0
-
-
V
VCCI = 0.8 V
-
-
0.3VCCI
V
VCCI = 1.1 V to 1.95 V
-
-
0.35VCCI
V
VCCI = 2.3 V to 2.7 V
-
-
0.7
V
-
-
0.9
V
VCCI = 0.8 V
-
-
0.3VCC(A)
V
VCCI = 1.1 V to 1.95 V
-
-
0.35VCC(A)
V
VCCI = 2.3 V to 2.7 V
-
-
0.7
V
VCCI = 3.0 V to 3.6 V
-
-
0.9
V
VCCO − 0.1
-
-
V
IO = −3 mA; VCC(A) = VCC(B) = 1.1 V
0.85
-
-
V
IO = −6 mA; VCC(A) = VCC(B) = 1.4 V
1.05
-
-
V
IO = −8 mA; VCC(A) = VCC(B) = 1.65 V
1.2
-
-
V
IO = −9 mA; VCC(A) = VCC(B) = 2.3 V
1.75
-
-
V
IO = −12 mA; VCC(A) = VCC(B) = 3.0 V
2.3
-
-
V
IO = 100 µA;
VCC(A) = VCC(B) = 0.8 V to 3.6 V
-
-
0.1
V
IO = 3 mA; VCC(A) = VCC(B) = 1.1 V
-
-
0.25
V
IO = 6 mA; VCC(A) = VCC(B) = 1.4 V
-
-
0.35
V
IO = 8 mA; VCC(A) = VCC(B) = 1.65 V
-
-
0.45
V
IO = 9 mA; VCC(A) = VCC(B) = 2.3 V
-
-
0.55
V
IO = 12 mA; VCC(A) = VCC(B) = 3.0 V
-
-
0.7
V
-
-
±1.5
µA
Tamb = −40 °C to +125 °C
VIH
HIGH-level input
voltage
[2]
data input
VCCI = 3.0 V to 3.6 V
[2]
DIR input
VIL
LOW-level input
voltage
[2]
data input
VCCI = 3.0 V to 3.6 V
[2]
DIR input
VOH
VOL
II
HIGH-level output
voltage
LOW-level output
voltage
input leakage
current
VI = VIH
IO = −100 µA;
VCC(A) = VCC(B) = 0.8 V to 3.6 V
VI = VIL
DIR input; VI = GND to VCC(A);
VCC(A) = VCC(B) = 0.8 V to 3.6 V
74AVC2T45_4
Product data sheet
[1]
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
8 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V). All unused data inputs of the device
must be held at VCCI or GND to ensure proper device operation.
Symbol Parameter
Conditions
[1]
Min
Typ
Max
Unit
-
-
±7.5
µA
IOZ
OFF-state output
current
A or B port; VO = GND or VCCO;
VCC(A) = VCC(B) = 0.8 V to 3.6 V
IOFF
power-off leakage
current
A port; VI or VO = 0 V to 3.6 V;
VCC(B) = 0 V; VCC(A) = 0.8 V to 3.6 V
-
-
±35
µA
B port; VI or VO = 0 V to 3.6 V;
VCC(B) = 0 V; VCC(A) = 0.8 V to 3.6 V
-
-
±35
µA
-
-
11.5
µA
supply current
ICC
A port; VI = GND or VCCI; IO = 0 A
[2]
VCC(A) = 0.8 V to 3.6 V;
VCC(B) = 0.8 V to 3.6 V
VCC(A) = 3.6 V; VCC(B) = 0 V
-
-
11.5
µA
VCC(A) = 0 V; VCC(B) = 3.6 V
−8
0
-
µA
VCC(A) = 0.8 V to 3.6 V;
VCC(B) = 0.8 V to 3.6 V
-
-
11.5
µA
VCC(A) = 3.6 V; VCC(B) = 0 V
−8
0
-
µA
-
-
11.5
µA
-
-
23
µA
B port; VI = GND or VCCI; IO = 0 A
[2]
VCC(A) = 0 V; VCC(B) = 3.6 V
A plus B port (ICC(A) + ICC(B)); IO = 0 A;
VI = GND or VCCI;
VCC(A) = 0.8 V to 3.6 V;
VCC(B) = 0.8 V to 3.6 V
[1]
VCCO is the supply voltage associated with the data output port.
[2]
VCCI is the supply voltage associated with the input port.
74AVC2T45_4
Product data sheet
[2]
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
9 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
25 °C
Conditions
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC(B) = 0.8 V
-
15.5
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
8.1
-
-
-
-
ns
VCC(B) = 1.4 V to 1.6 V
-
7.6
-
-
-
-
ns
VCC(B) = 1.65 V to 1.95 V
-
7.7
-
-
-
-
ns
VCC(B) = 2.3 V to 2.7 V
-
8.4
-
-
-
-
ns
-
9.2
-
-
-
-
ns
VCC(B) = 0.8 V
-
15.5
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
12.7
-
-
-
-
ns
VCC(A) = 0.8 V
tpd
[2]
propagation delay A to B; see Figure 6
VCC(B) = 3.0 V to 3.6 V
[2]
B to A; see Figure 6
VCC(B) = 1.4 V to 1.6 V
-
12.3
-
-
-
-
ns
VCC(B) = 1.65 V to 1.95 V
-
12.2
-
-
-
-
ns
VCC(B) = 2.3 V to 2.7 V
-
12.0
-
-
-
-
ns
-
11.8
-
-
-
-
ns
VCC(B) = 0.8 V
-
12.2
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
12.2
-
-
-
-
ns
VCC(B) = 1.4 V to 1.6 V
-
12.2
-
-
-
-
ns
VCC(B) = 1.65 V to 1.95 V
-
12.2
-
-
-
-
ns
VCC(B) = 2.3 V to 2.7 V
-
12.2
-
-
-
-
ns
-
12.2
-
-
-
-
ns
VCC(B) = 0.8 V
-
11.7
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
7.9
-
-
-
-
ns
VCC(B) = 1.4 V to 1.6 V
-
7.6
-
-
-
-
ns
VCC(B) = 1.65 V to 1.95 V
-
8.2
-
-
-
-
ns
VCC(B) = 2.3 V to 2.7 V
-
8.7
-
-
-
-
ns
VCC(B) = 3.0 V to 3.6 V
-
10.2
-
-
-
-
ns
VCC(B) = 3.0 V to 3.6 V
tdis
disable time
DIR to A; see Figure 7
[3]
VCC(B) = 3.0 V to 3.6 V
DIR to B; see Figure 7
[3]
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
10 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
ten
enable time
25 °C
Conditions
Unit
Min
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC(B) = 0.8 V
-
27.2
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
20.6
-
-
-
-
ns
VCC(B) = 1.4 V to 1.6 V
-
19.9
-
-
-
-
ns
VCC(B) = 1.65 V to 1.95 V
-
20.4
-
-
-
-
ns
VCC(B) = 2.3 V to 2.7 V
-
20.7
-
-
-
-
ns
-
22.0
-
-
-
-
ns
VCC(B) = 0.8 V
-
27.7
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
20.3
-
-
-
-
ns
VCC(B) = 1.4 V to 1.6 V
-
19.8
-
-
-
-
ns
VCC(B) = 1.65 V to 1.95 V
-
19.9
-
-
-
-
ns
VCC(B) = 2.3 V to 2.7 V
-
20.6
-
-
-
-
ns
VCC(B) = 3.0 V to 3.6 V
-
21.4
-
-
-
-
ns
DIR to A; see Figure 7
[4][5]
VCC(B) = 3.0 V to 3.6 V
DIR to B; see Figure 7
[4][5]
74AVC2T45_4
Product data sheet
−40 °C to +125 °C
Typ[1]
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
11 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
25 °C
Conditions
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC(B) = 0.8 V
-
12.7
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
1.0
9.0
9.9
ns
VCC(A) = 1.1 V to 1.3 V
tpd
[2]
propagation delay A to B; see Figure 6
VCC(B) = 1.4 V to 1.6 V
-
-
-
0.7
6.8
7.5
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
0.6
6.1
6.8
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
0.5
5.7
6.3
ns
-
-
-
0.5
6.1
6.8
ns
VCC(B) = 0.8 V
-
8.1
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
1.0
9.0
9.9
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
0.8
8.0
8.8
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
0.7
7.7
8.5
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
0.6
7.2
8.0
ns
-
-
-
0.5
7.1
7.9
ns
VCC(B) = 0.8 V
-
4.9
-
-
-
-
ns
VCC(B) = 1.1 V to 3.6 V
-
-
-
2.2
8.8
9.7
ns
VCC(B) = 0.8 V
-
9.2
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
2.2
8.4
9.2
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
1.8
6.7
7.4
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
2.0
6.9
7.6
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
1.7
6.2
6.9
ns
VCC(B) = 3.0 V to 3.6 V
-
-
-
2.4
7.2
8.0
ns
VCC(B) = 3.0 V to 3.6 V
[2]
B to A; see Figure 6
VCC(B) = 3.0 V to 3.6 V
tdis
disable time
DIR to A; see Figure 7
DIR to B; see Figure 7
[3]
[3]
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
12 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
ten
enable time
25 °C
Conditions
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC(B) = 0.8 V
-
17.3
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
-
17.4
19.1
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
-
14.7
16.2
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
-
14.6
16.1
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
-
13.4
14.9
ns
-
-
-
-
14.3
15.9
ns
VCC(B) = 0.8 V
-
17.6
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
-
17.8
19.6
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
-
15.6
17.2
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
-
14.9
16.5
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
-
14.5
16.0
ns
VCC(B) = 3.0 V to 3.6 V
-
-
-
-
14.9
16.5
ns
VCC(B) = 0.8 V
-
12.3
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
1.0
8.0
8.8
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
0.7
5.4
6.0
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
0.6
4.6
5.1
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
0.5
3.7
4.1
ns
VCC(B) = 3.0 V to 3.6 V
-
-
-
0.5
3.5
3.9
ns
VCC(B) = 0.8 V
-
7.6
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
1.0
6.8
7.5
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
0.8
5.4
6.0
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
0.7
5.1
5.7
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
0.6
4.7
5.2
ns
VCC(B) = 3.0 V to 3.6 V
-
-
-
0.5
4.5
5.0
ns
DIR to A; see Figure 7
[4][5]
VCC(B) = 3.0 V to 3.6 V
DIR to B; see Figure 7
[4][5]
VCC(A) = 1.4 V to 1.6 V
tpd
[2]
propagation delay A to B; see Figure 6
[2]
B to A; see Figure 6
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
13 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
tdis
disable time
25 °C
Conditions
Max
Min
Max
(85 °C)
Max
(125 °C)
-
3.8
-
-
-
-
ns
-
-
-
1.6
6.3
7.0
ns
VCC(B) = 0.8 V
-
9.0
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
2.0
7.6
8.3
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
1.8
5.9
6.5
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
1.6
6.0
6.6
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
1.2
4.8
5.3
ns
VCC(B) = 3.0 V to 3.6 V
-
-
-
1.7
5.5
6.1
ns
VCC(B) = 0.8 V
-
16.6
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
-
14.4
15.8
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
-
11.3
12.5
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
-
11.1
12.3
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
-
9.5
10.5
ns
-
-
-
-
10.0
11.1
ns
VCC(B) = 0.8 V
-
16.1
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
-
14.3
15.8
ns
DIR to A; see Figure 7
[3]
VCC(B) = 1.1 V to 3.6 V
DIR to B; see Figure 7
enable time
DIR to A; see Figure 7
[3]
[4][5]
VCC(B) = 3.0 V to 3.6 V
DIR to B; see Figure 7
[4][5]
VCC(B) = 1.4 V to 1.6 V
-
-
-
-
11.7
13.0
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
-
10.9
12.1
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
-
10.0
11.1
ns
VCC(B) = 3.0 V to 3.6 V
-
-
-
-
9.8
10.9
ns
74AVC2T45_4
Product data sheet
Unit
Min
VCC(B) = 0.8 V
ten
−40 °C to +125 °C
Typ[1]
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
14 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
25 °C
Conditions
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC(B) = 0.8 V
-
12.2
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
1.0
7.7
8.5
ns
VCC(A) = 1.65 V to 1.95 V
tpd
[2]
propagation delay A to B; see Figure 6
VCC(B) = 1.4 V to 1.6 V
-
-
-
0.6
5.1
5.7
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
0.5
4.3
4.8
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
0.5
3.4
3.8
ns
-
-
-
0.5
3.1
3.5
ns
VCC(B) = 0.8 V
-
7.7
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
1.0
6.1
6.8
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
0.7
4.6
5.1
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
0.5
4.4
4.9
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
0.5
3.9
4.3
ns
-
-
-
0.5
3.7
4.1
ns
VCC(B) = 0.8 V
-
3.7
-
-
-
-
ns
VCC(B) = 1.1 V to 3.6 V
-
-
-
1.6
5.5
6.1
ns
VCC(B) = 0.8 V
-
8.8
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
1.8
7.7
8.5
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
1.8
5.7
6.3
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
1.4
5.8
6.4
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
1.0
4.5
5.0
ns
VCC(B) = 3.0 V to 3.6 V
-
-
-
1.5
5.2
5.8
ns
VCC(B) = 3.0 V to 3.6 V
[2]
B to A; see Figure 6
VCC(B) = 3.0 V to 3.6 V
tdis
disable time
DIR to A; see Figure 7
DIR to B; see Figure 7
[3]
[3]
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
15 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
ten
enable time
25 °C
Conditions
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC(B) = 0.8 V
-
16.5
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
-
13.8
15.3
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
-
10.3
11.4
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
-
10.2
11.3
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
-
8.4
9.3
ns
-
-
-
-
8.9
9.9
ns
VCC(B) = 0.8 V
-
15.9
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
-
13.2
14.6
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
-
10.6
11.8
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
-
9.8
10.9
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
-
8.9
9.9
ns
VCC(B) = 3.0 V to 3.6 V
-
-
-
-
8.6
9.6
ns
VCC(B) = 0.8 V
-
12.0
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
1.0
7.2
8.0
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
0.5
4.7
5.2
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
0.5
3.9
4.3
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
0.5
3.0
3.3
ns
VCC(B) = 3.0 V to 3.6 V
-
-
-
0.5
2.6
2.9
ns
VCC(B) = 0.8 V
-
8.4
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
1.0
5.7
6.3
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
0.6
3.8
4.2
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
0.5
3.4
3.8
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
0.5
3.0
3.3
ns
VCC(B) = 3.0 V to 3.6 V
-
-
-
0.5
2.8
3.1
ns
DIR to A; see Figure 7
[4][5]
VCC(B) = 3.0 V to 3.6 V
DIR to B; see Figure 7
[4][5]
VCC(A) = 2.3 V to 2.7 V
tpd
[2]
propagation delay A to B; see Figure 6
[2]
B to A; see Figure 6
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
16 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
tdis
disable time
25 °C
Conditions
Max
Min
Max
(85 °C)
Max
(125 °C)
-
2.8
-
-
-
-
ns
-
-
-
1.5
4.2
4.7
ns
VCC(B) = 0.8 V
-
8.7
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
1.7
7.3
8.0
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
2.0
5.2
5.8
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
1.5
5.1
5.7
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
0.6
4.2
4.7
ns
VCC(B) = 3.0 V to 3.6 V
-
-
-
1.1
4.8
5.3
ns
VCC(B) = 0.8 V
-
17.1
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
-
13.0
14.3
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
-
9.0
10.0
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
-
8.5
9.5
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
-
7.2
8.0
ns
-
-
-
-
7.6
8.4
ns
VCC(B) = 0.8 V
-
14.8
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
-
11.4
12.7
ns
DIR to A; see Figure 7
[3]
VCC(B) = 1.1 V to 3.6 V
DIR to B; see Figure 7
enable time
DIR to A; see Figure 7
[3]
[4][5]
VCC(B) = 3.0 V to 3.6 V
DIR to B; see Figure 7
[4][5]
VCC(B) = 1.4 V to 1.6 V
-
-
-
-
8.9
9.9
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
-
8.1
9.0
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
-
7.2
8.0
ns
VCC(B) = 3.0 V to 3.6 V
-
-
-
-
6.8
7.6
ns
74AVC2T45_4
Product data sheet
Unit
Min
VCC(B) = 0.8 V
ten
−40 °C to +125 °C
Typ[1]
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
17 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
25 °C
Conditions
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC(B) = 0.8 V
-
11.8
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
1.0
7.1
7.9
ns
VCC(A) = 3.0 V to 3.6 V
tpd
[2]
propagation delay A to B; see Figure 6
VCC(B) = 1.4 V to 1.6 V
-
-
-
0.5
4.5
5.0
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
0.5
3.7
4.1
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
0.5
2.8
3.1
ns
-
-
-
0.5
2.4
2.7
ns
VCC(B) = 0.8 V
-
9.2
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
1.0
6.1
6.8
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
0.6
3.6
4.0
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
0.5
3.1
3.5
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
0.5
2.6
2.9
ns
-
-
-
0.5
2.4
2.7
ns
VCC(B) = 0.8 V
-
3.4
-
-
-
-
ns
VCC(B) = 1.1 V to 3.6 V
-
-
-
1.5
4.7
5.2
ns
VCC(B) = 0.8 V
-
8.6
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
1.7
7.2
7.9
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
0.7
5.5
6.1
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
0.6
5.5
6.1
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
0.7
4.1
4.6
ns
VCC(B) = 3.0 V to 3.6 V
-
-
-
1.7
4.7
5.2
ns
VCC(B) = 3.0 V to 3.6 V
[2]
B to A; see Figure 6
VCC(B) = 3.0 V to 3.6 V
tdis
disable time
DIR to A; see Figure 7
DIR to B; see Figure 7
[3]
[3]
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
18 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
ten
enable time
25 °C
Conditions
Unit
Min
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC(B) = 0.8 V
-
17.8
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
-
13.3
14.7
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
-
9.1
10.1
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
-
8.6
9.6
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
-
6.7
7.5
ns
-
-
-
-
7.1
7.9
ns
VCC(B) = 0.8 V
-
15.2
-
-
-
-
ns
VCC(B) = 1.1 V to 1.3 V
-
-
-
-
11.8
13.1
ns
VCC(B) = 1.4 V to 1.6 V
-
-
-
-
9.2
10.2
ns
VCC(B) = 1.65 V to 1.95 V
-
-
-
-
8.4
9.3
ns
VCC(B) = 2.3 V to 2.7 V
-
-
-
-
7.5
8.3
ns
VCC(B) = 3.0 V to 3.6 V
-
-
-
-
7.1
7.9
ns
DIR to A; see Figure 7
[4][5]
VCC(B) = 3.0 V to 3.6 V
DIR to B; see Figure 7
[4][5]
74AVC2T45_4
Product data sheet
−40 °C to +125 °C
Typ[1]
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
19 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
25 °C
Conditions
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC(A) = VCC(B) = 0.8 V
-
1
-
-
-
-
pF
VCC(A) = VCC(B) = 1.2 V
-
2
-
-
-
-
pF
VCC(A) = VCC(B) = 1.5 V
-
2
-
-
-
-
pF
VCC(A) = VCC(B) = 1.8 V
-
2
-
-
-
-
pF
VCC(A) = VCC(B) = 2.5 V
-
2
-
-
-
-
pF
-
2
-
-
-
-
pF
VCC(A) = VCC(B) = 0.8 V
-
9
-
-
-
-
pF
VCC(A) = VCC(B) = 1.2 V
-
11
-
-
-
-
pF
VCC(A) = VCC(B) = 1.5 V
-
11
-
-
-
-
pF
VCC(A) = VCC(B) = 1.8 V
-
12
-
-
-
-
pF
VCC(A) = VCC(B) = 2.5 V
-
14
-
-
-
-
pF
VCC(A) = VCC(B) = 3.3 V
-
17
-
-
-
-
pF
Power dissipation capacitance
power dissipation
capacitance
CPD
A port: (direction A to B);
B port: (direction B to A)
[6][7]
VCC(A) = VCC(B) = 3.3 V
A port: (direction B to A);
B port: (direction A to B)
[1]
All typical values are measured at nominal VCC(A) and VCC(B).
[2]
tpd is the same as tPLH and tPHL.
[3]
tdis is the same as tPLZ and tPHZ.
[4]
ten is the same as tPZL and tPZH.
[6][7]
[5]
The enable time is a calculated value using the formula shown in Section 13.4 “Enable times”.
[6]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
[7]
fi = 10 MHz; VI = GND to VCC; tr = tf = 1 ns; CL = 0 pF; RL = ∞ Ω.
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
20 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
12. Waveforms
VI
VM
nA, nB input
GND
tPLH
tPHL
VOH
nB, nA output
VM
001aak114
VOL
Measurement points are given in Table 9.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 6.
The data input (nA, nB) to output (nB, nA) propagation delay times
VI
DIR input
VM
GND
t PLZ
output
LOW-to-OFF
OFF-to-LOW
t PZL
VCCO
VM
VX
VOL
t PHZ
VOH
t PZH
VY
output
HIGH-to-OFF
OFF-to-HIGH
VM
GND
outputs
enabled
outputs
disabled
outputs
enabled
001aae968
Measurement points are given in Table 9.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 7.
Table 9.
Enable and disable times
Measurement points
Supply voltage
Input[1]
Output[2]
VCC(A), VCC(B)
VM
VM
VX
VY
1.1 V to 1.6 V
0.5VCCI
0.5VCCO
VOL + 0.1 V
VOH − 0.1 V
1.65 V to 2.7 V
0.5VCCI
0.5VCCO
VOL + 0.15 V
VOH − 0.15 V
3.0 V to 3.6 V
0.5VCCI
0.5VCCO
VOL + 0.3 V
VOH − 0.3 V
[1]
VCCI is the supply voltage associated with the data input port.
[2]
VCCO is the supply voltage associated with the output port.
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
21 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
VI
tW
90 %
negative
pulse
VM
0V
tf
tr
tr
tf
VI
90 %
positive
pulse
0V
VM
10 %
VM
VM
10 %
tW
VEXT
VCC
VI
RL
VO
G
DUT
RT
CL
RL
001aae331
Test data is given in Table 10.
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance.
VEXT = External voltage for measuring switching times.
Fig 8.
Table 10.
Load circuitry for switching times
Test data
Supply voltage
Input
VCC(A), VCC(B)
VI[1]
∆t/∆V[2]
CL
RL
tPLH, tPHL
tPZH, tPHZ
tPZL, tPLZ[3]
1.1 V to 1.6 V
VCCI
≤ 1.0 ns/V
15 pF
2 kΩ
open
GND
2VCCO
1.65 V to 2.7 V
VCCI
≤ 1.0 ns/V
15 pF
2 kΩ
open
GND
2VCCO
3.0 V to 3.6 V
VCCI
≤ 1.0 ns/V
15 pF
2 kΩ
open
GND
2VCCO
[1]
Load
VEXT
VCCI is the supply voltage associated with the data input port.
[2]
dV/dt ≥ 1.0 V/ns
[3]
VCCO is the supply voltage associated with the output port.
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
22 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
13. Application information
13.1 Unidirectional logic level-shifting application
The circuit given in Figure 9 is an example of the 74AVC2T45 being used in an
unidirectional logic level-shifting application.
VCC1
VCC(A)
VCC1
VCC2
74AVC2T45
1A
2A
GND
VCC1
1
8
2
7
3
6
4
5
VCC(B)
VCC2
1B
2B
DIR
VCC2
system-2
system-1
001aag581
Fig 9.
Unidirectional logic level-shifting application
Table 11.
Unidirectional logic level-shifting application
Pin
Name
Function
Description
1
VCC(A)
VCC1
supply voltage of system-1 (0.8 V to 3.6 V)
2
1A
OUT1
output level depends on VCC1 voltage
3
2A
OUT2
output level depends on VCC1 voltage
4
GND
GND
device GND
5
DIR
DIR
the GND (LOW level) determines B port to A port direction
6
2B
IN2
input threshold value depends on VCC2 voltage
7
1B
IN1
input threshold value depends on VCC2 voltage
8
VCC(B)
VCC2
supply voltage of system-2 (0.8 V to 3.6 V)
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
23 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
13.2 Bidirectional logic level-shifting application
Figure 10 shows the 74AVC2T45 being used in a bidirectional logic level-shifting
application. Since the device does not have an output enable (OE) pin, the system
designer should take precautions to avoid bus contention between system-1 and
system-2 when changing directions.
VCC1
VCC1
VCC2
VCC2
74AVC2T45
I/O-1
PULL-UP/DOWN
VCC(A)
1A
2A
GND
8
1
2
7
3
6
4
5
VCC(B)
PULL-UP/DOWN
I/O-2
1B
2B
DIR
DIR CTRL
DIR CTRL
system-2
system-1
001aag582
System-1 and system-2 must use the same conditions, i.e., both pull-up or both pull-down.
Fig 10. Bidirectional logic level-shifting application
Table 12 gives a sequence that will illustrate data transmission from system-1 to system-2
and then from system-2 to system-1.
Table 12.
Bidirectional logic level-shifting application[1][2]
State DIR CTRL I/O-1
I/O-2
Description
1
H
output
input
system-1 data to system-2
2
H
Z
Z
system-2 is getting ready to send data to system-1.
I/O-1 and I/O-2 are disabled. The bus-line state
depends on the pull-up or pull-down.
3
L
Z
Z
DIR bit is set LOW. I/O-1 and I/O-2 still are disabled.
The bus-line state depends on the pull-up or pull-down.
4
L
input
output
system-2 data to system-1
[1]
System-1 and system-2 must use the same conditions, i.e., both pull-up or both pull-down.
[2]
H = HIGH voltage level;
L = LOW voltage level;
Z = high-impedance OFF-state.
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
24 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
13.3 Power-up considerations
The device is designed such that no special power-up sequence is required other than
GND being applied first.
Table 13.
Typical total supply current (ICC(A) + ICC(B))
VCC(A)
VCC(B)
Unit
0V
0.8 V
1.2 V
1.5 V
1.8 V
2.5 V
3.3 V
0V
0
0.1
0.1
0.1
0.1
0.1
0.1
µA
0.8 V
0.1
0.1
0.1
0.1
0.1
0.7
2.3
µA
1.2 V
0.1
0.1
0.1
0.1
0.1
0.3
1.4
µA
1.5 V
0.1
0.1
0.1
0.1
0.1
0.1
0.9
µA
1.8 V
0.1
0.1
0.1
0.1
0.1
0.1
0.5
µA
2.5 V
0.1
0.7
0.3
0.1
0.1
0.1
0.1
µA
3.3 V
0.1
2.3
1.4
0.9
0.5
0.1
0.1
µA
13.4 Enable times
The enable times for the 74AVC2T45 are calculated from the following formulas:
• ten (DIR to nA) = tdis (DIR to nB) + tpd (nB to nA)
• ten (DIR to nB) = tdis (DIR to nA) + tpd (nA to nB)
In a bidirectional application, these enable times provide the maximum delay from the time
the DIR bit is switched until an output is expected. For example, if the 74AVC2T45 initially
is transmitting from A to B, then the DIR bit is switched, the B port of the device must be
disabled before presenting it with an input. After the B port has been disabled, an input
signal applied to it appears on the corresponding A port after the specified propagation
delay.
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
25 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
14. Package outline
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm
D
E
A
SOT505-2
X
c
HE
y
v M A
Z
5
8
A
A2
(A3)
A1
pin 1 index
θ
Lp
L
1
4
e
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D(1)
E(1)
e
HE
L
Lp
v
w
y
Z(1)
θ
mm
1.1
0.15
0.00
0.95
0.75
0.25
0.38
0.22
0.18
0.08
3.1
2.9
3.1
2.9
0.65
4.1
3.9
0.5
0.47
0.33
0.2
0.13
0.1
0.70
0.35
8°
0°
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT505-2
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
02-01-16
---
Fig 11. Package outline SOT505-2 (TSSOP8)
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
26 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm
D
E
SOT765-1
A
X
c
y
HE
v M A
Z
5
8
Q
A
A2
A1
pin 1 index
(A3)
θ
Lp
1
4
e
L
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D(1)
E(2)
e
HE
L
Lp
Q
v
w
y
Z(1)
θ
mm
1
0.15
0.00
0.85
0.60
0.12
0.27
0.17
0.23
0.08
2.1
1.9
2.4
2.2
0.5
3.2
3.0
0.4
0.40
0.15
0.21
0.19
0.2
0.13
0.1
0.4
0.1
8°
0°
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
SOT765-1
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
02-06-07
MO-187
Fig 12. Package outline SOT765-1 (VSSOP8)
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
27 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1.95 x 0.5 mm
1
2
SOT833-1
b
4
3
4×
(2)
L
L1
e
8
7
6
e1
5
e1
e1
8×
A
(2)
A1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A(1)
max
A1
max
b
D
E
e
e1
L
L1
mm
0.5
0.04
0.25
0.17
2.0
1.9
1.05
0.95
0.6
0.5
0.35
0.27
0.40
0.32
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOT833-1
---
MO-252
---
EUROPEAN
PROJECTION
ISSUE DATE
07-11-14
07-12-07
Fig 13. Package outline SOT833-1 (XSON8)
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
28 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
XSON8U: plastic extremely thin small outline package; no leads;
8 terminals; UTLP based; body 3 x 2 x 0.5 mm
B
D
SOT996-2
A
A
E
A1
detail X
terminal 1
index area
e1
v
w
b
e
L1
1
4
8
5
C
C A B
C
M
M
y
y1 C
L2
L
X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max
A1
b
D
E
e
e1
L
L1
L2
v
w
y
y1
mm
0.5
0.05
0.00
0.35
0.15
2.1
1.9
3.1
2.9
0.5
1.5
0.5
0.3
0.15
0.05
0.6
0.4
0.1
0.05
0.05
0.1
REFERENCES
OUTLINE
VERSION
IEC
SOT996-2
---
JEDEC
JEITA
---
EUROPEAN
PROJECTION
ISSUE DATE
07-12-18
07-12-21
Fig 14. Package outline SOT996-2 (XSON8U)
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
29 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
15. Abbreviations
Table 14.
Abbreviations
Acronym
Description
CDM
Charged Device Model
DUT
Device Under Test
ESD
ElectroStatic Discharge
HBM
Human Body Model
MM
Machine Model
16. Revision history
Table 15.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
74AVC2T45_4
20090505
Product data sheet
-
74AVC2T45_3
Modifications:
•
Section 8 “Limiting values”:
Changed: total power dissipation.
74AVC2T45_3
20090129
Product data sheet
-
74AVC2T45_2
74AVC2T45_2
20080620
Product data sheet
-
74AVC2T45_1
74AVC2T45_1
20070703
Product data sheet
-
-
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
30 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
17. Legal information
17.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
17.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
17.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
17.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
18. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
74AVC2T45_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 5 May 2009
31 of 32
74AVC2T45
NXP Semiconductors
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
19. Contents
1
2
3
4
5
6
6.1
6.2
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
16
17
17.1
17.2
17.3
17.4
18
19
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional description . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Recommended operating conditions. . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . 10
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Application information. . . . . . . . . . . . . . . . . . 23
Unidirectional logic level-shifting application. . 23
Bidirectional logic level-shifting application. . . 24
Power-up considerations . . . . . . . . . . . . . . . . 25
Enable times . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 26
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 30
Legal information. . . . . . . . . . . . . . . . . . . . . . . 31
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 31
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Contact information. . . . . . . . . . . . . . . . . . . . . 31
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 5 May 2009
Document identifier: 74AVC2T45_4