PHILIPS BFG92A/X

DATA SHEET
book, halfpage
M3D071
BFG92A/X
NPN 5 GHz wideband transistor
Product specification
Supersedes data of 1995 Sep 12
1998 Sep 23
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
FEATURES
DESCRIPTION
• High power gain
Silicon NPN transistor in a 4-pin,
dual-emitter SOT143B plastic
package.
• Low noise figure
• Gold metallization ensures
excellent reliability.
handbook, 2 columns
4
PINNING
APPLICATIONS
PIN
Wideband applications in the UHF
and microwave range.
3
1
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
2
Top view
MSB014
Marking code: V14.
Fig.1 SOT143B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
−
−
20
V
VCEO
collector-emitter voltage
−
−
15
V
IC
collector current (DC)
−
−
25
mA
Ptot
total power dissipation
Ts ≤ 60 °C
−
−
400
mW
Cre
feedback capacitance
IC = ic = 0; VCB = 10 V; f = 1 MHz
−
0.35
−
pF
fT
transition frequency
IC = 15 mA; VCE = 10 V; f = 500 MHz
3.5
5
−
GHz
GUM
maximum unilateral power
gain
IC = 15 mA; VCE = 10 V; Tamb = 25 °C;
f = 1 GHz
−
16
−
dB
IC = 15 mA; VCE = 10 V; Tamb = 25 °C;
f = 2 GHz
−
11
−
dB
Γs = Γopt; IC = 5 mA; VCE = 10 V;
Tamb = 25 °C; f = 1 GHz
−
2
−
dB
F
noise figure
1998 Sep 23
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
collector current (DC)
−
25
mA
Ptot
total power dissipation
Ts ≤ 60 °C; note 1
−
400
mW
Tstg
storage temperature range
−65
150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
note 1
VALUE
UNIT
290
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector leakage current
IE = 0; VCB = 10 V
−
−
50
hFE
DC current gain
IC = 15 mA; VCE = 10 V
40
90
−
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
0.6
−
pF
nA
Ce
emitter capacitance
IC = ic = 0; VEB = 10 V; f = 1 MHz
−
0.9
−
pF
Cre
feedback capacitance
IC = ic = 0; VCB = 10 V; f = 1 MHz
−
0.35
−
pF
fT
transition frequency
IC = 15 mA; VCE = 10 V; f = 500 MHz
3.5
5
−
GHz
GUM
maximum unilateral power
gain; note 1
IC = 15 mA; VCE = 10 V;
Tamb = 25 °C; f = 1 GHz
−
16
−
dB
IC = 15 mA; VCE = 10 V;
Tamb = 25 °C; f = 2 GHz
−
11
−
dB
Γs = Γopt; IC = 5 mA; VCE = 10 V;
Tamb = 25 °C; f = 1 GHz
−
2
−
dB
Γs = Γopt; IC = 5 mA; VCE = 10 V;
Tamb = 25 °C; f = 2 GHz
−
3
−
dB
F
noise figure
Note
S 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 )
1998 Sep 23
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
MBB963 - 1
800
MCD074
120
handbook, halfpage
handbook, halfpage
P
tot
(mW)
h FE
600
80
400
40
200
0
0
0
50
100
150
200
0
10
20
Ts ( o C)
I C (mA)
30
VCE = 10 V.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
MBB275
MCD075
handbook,0.6
halfpage
6
handbook, halfpage
fT
(GHz)
C re
(pF)
0.4
4
0.2
2
0
0
0
6
12
18
0
24
10
VCB (V)
Feedback capacitance as a function of
collector-base voltage; typical values.
1998 Sep 23
I C (mA)
30
VCE = 10 V; Tamb = 25 °C; f = 500 MHz.
IC = ic = 0; f = 1 MHz.
Fig.4
20
Fig.5
4
Transition frequency as a function of
collector current; typical values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
MCD077
30
MCD078
30
handbook, halfpage
handbook, halfpage
MSG
gain
gain
(dB)
(dB)
MSG
G UM
20
20
G UM
10
10
0
0
5
10
0
20
25
I C (mA)
15
0
5
VCE = 10 V; f = 500 MHz.
VCE = 10 V; f = 1 GHz.
Fig.6
Fig.7
Gain as a function of collector current;
typical values.
MCD079
50
10
25
20
I C (mA)
15
Gain as a function of collector current;
typical values.
MCD080
50
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
40
G UM
40
G UM
MSG
30
30
MSG
20
20
G max
G max
10
10
0
10
10
2
10
3
f
(MHz)
10
0
4
10
10
VCE = 10 V; IC = 5 mA.
VCE = 10 V; IC = 15 mA.
Fig.8
Fig.9
Gain as a function of frequency; typical
values.
1998 Sep 23
5
2
10
3
f (MHz)
10
4
Gain as a function of frequency; typical
values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
MCD081
4
MCD082
4
handbook, halfpage
handbook, halfpage
f = 2 GHz
F
(dB)
I C = 15 mA
F
(dB)
3
10 mA
3
5 mA
1 GHz
500 MHz
2
2
1
1
0
1
10
I C (mA)
0
10 2
10 2
10 3
f (MHz)
10 4
VCE = 10 V.
VCE = 10 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
stability circle
1
handbook, full pagewidth
0.5
un
re sta
gio bl
n e
2
0.2
5
OPT
10
*
+
j
F min = 1.6 dB
0
–j
MSG
23.9 dB
0.2
0.5
1
2
5
∞
10
10
2 dB
5
0.2
3 dB
4 dB
2
0.5
Zo = 50 Ω.
Maximum stable gain = 23.9 dB.
1
MCD083
Fig.12 Common emitter noise figure circles; typical values.
1998 Sep 23
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
1
handbook, full pagewidth
0.5
2
unsta
ble re
gion
stability circle
0.2
5
OPT
10
*
+j
F min = 2.1 dB
0
MSG 0.2
19.9 dB
–j
1
0.5
2
5
∞
10
10
2.5 dB
3 dB
0.2
5
4 dB
2
0.5
1
MCD084
Zo = 50 Ω.
Maximum stable gain = 19.9 dB.
Fig.13 Common emitter noise figure circles; typical values.
1
handbook, full pagewidth
0.5
2
5 dB
4 dB
0.2
5
3.5 dB
OPT
10
*
+j
F min = 3 dB
0
0.2
Gmax
–j
0.5
1
2
5
∞
10
10
*
12.5 dB
0.2
12 dB
5
10 dB
2
0.5
1
MCD085
Zo = 50 Ω.
Fig.14 Common emitter noise figure circles; typical values.
1998 Sep 23
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
1
handbook, full pagewidth
0.5
2
3 GHz
0.2
5
10
+
j
0.2
0
0.5
1
2
5
10
∞
40 MHz
–j
10
5
0.2
2
0.5
1
MCD086
VCE = 10 V; IC = 15 mA.
Fig.15 Common emitter input reflection coefficient (S11); typical values.
90 o
handbook, full pagewidth
45 o
135 o
180 o
40 MHz
50
40
30
20
10
_ 45 o
_ 135 o
VCE = 10 V; IC = 15 mA.
0o
3 GHz
_ 90 o
MCD072
Fig.16 Common emitter forward transmission coefficient (S21); typical values.
1998 Sep 23
8
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
90 o
handbook, full pagewidth
45 o
135 o
3 GHz
40
MHz
180 o
0.04
0.08
0.12
0.16
0.20
0o
_ 45 o
_ 135 o
_ 90 o
VCE = 10 V; IC = 15 mA.
MCD071
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
0.2
0.5
1
2
5
–j
10
∞
40 MHz
0.2
10
5
3 GHz
2
0.5
1
MCD073
VCE = 10 V; IC = 15 mA.
Fig.18 Common emitter output reflection coefficient (S22); typical values.
1998 Sep 23
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
SPICE parameters for BFR90A/X die
SEQUENCE No.
PARAMETER
SEQUENCE No.
VALUE
UNIT
PARAMETER
36 (note 1)
VJS
VALUE
UNIT
750.0
mV
1
IS
411.8
aA
37 (note 1)
MJS
0.000
−
2
BF
102.6
−
38
FC
850.0
m
3
NF
997.2
m
Note
4
VAF
62.67
V
5
IKF
3.200
A
1. These parameters have not been extracted,
the default values are shown.
6
ISE
4.010
fA
7
NE
1.577
−
8
BR
18.10
−
9
NR
996.2
m
10
VAR
3.369
V
11
IKR
1.281
A
12
ISC
279.9
aA
13
NC
1.075
−
14
RB
10.00
Ω
15
IRB
1.000
µA
16
RBM
10.00
Ω
17
RE
1.164
Ω
18
RC
2.320
Ω
19 (note 1)
XTB
0.000
−
20 (note 1)
EG
1.110
eV
21 (note 1)
XTI
3.000
−
22
CJE
890.5
fF
23
VJE
600.0
mV
24
MJE
258.5
m
25
TF
15.49
ps
26
XTF
39.14
−
27
VTF
2.152
V
28
ITF
213.7
mA
Cbe
84
fF
29
PTF
0.000
deg
Ccb
17
fF
30
CJC
546.5
fF
Cce
191
fF
31
VJC
380.8
mV
L1
0.12
nH
32
MJC
202.9
m
L2
0.21
nH
33
XCJC
150.0
m
L3
0.06
nH
34
TR
5.618
ns
LB
0.95
nH
35 (note 1)
CJS
0.000
F
LE
0.40
nH
1998 Sep 23
C cb
handbook, halfpage
L1
LB
B
L2
B'
C'
C
E'
C be
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50.
QLB,E (f) = QLB,E √ (f/fc).
fc = scaling frequency = 100 MHz.
Fig.19 Package equivalent circuit SOT143B.
List of components (see Fig.19)
DESIGNATION
10
VALUE
UNIT
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT143B
1998 Sep 23
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Sep 23
12
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
NOTES
1998 Sep 23
13
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
NOTES
1998 Sep 23
14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
NOTES
1998 Sep 23
15
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© Philips Electronics N.V. 1998
SCA60
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Printed in The Netherlands
125104/00/04/pp16
Date of release: 1998 Sep 23
Document order number:
9397 750 04344