DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X FEATURES DESCRIPTION • Low current consumption (100 µA to 1 mA) • Low noise figure NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). • Gold metallization ensures excellent reliability. PINNING PIN APPLICATIONS • RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. handbook, 2 columns 4 1 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 3 2 Top view MSB014 Marking code: V11. Fig.1 SOT143B. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage − − 8 V VCEO collector-emitter voltage − − 5 V IC collector current (DC) − − 6.5 mA Ptot total power dissipation Ts ≤ 165 °C − − 32 mW hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 fT transition frequency IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C 3.5 5 − GHz GUM maximum unilateral power gain IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C − 18 − dB F noise figure IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C − 1.8 − dB IC = 1 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C − 2 − dB 1997 Oct 29 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 8 V VCEO collector-emitter voltage open base − 5 V VEBO emitter-base voltage open collector − 2 V IC collector current (DC) − 6.5 mA Ptot total power dissipation Ts ≤ 165 °C; note 1 − 32 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point note 1 VALUE UNIT 320 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current IE = 0; VCB = 5 V − − 50 hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 Cre feedback capacitance IC = ic = 0; VCB = 1 V; f = 1 MHz − 0.21 0.3 pF fT transition frequency IC = 1 mA; VCE = 1 V; Tamb = 25 °C; f = 500 MHz 3.5 5 − GHz GUM maximum unilateral power gain (note 1) IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C − 18 − dB F noise figure IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C − 1.8 − dB IC = 1 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C − 2 − dB Note 2 µA S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB 2 2 1 1 – S – S 11 22 1997 Oct 29 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X MRC038 - 1 MCD138 100 handbook,40 halfpage handbook, halfpage h FE P tot (mW) 80 30 60 20 40 10 20 0 10 3 0 0 50 100 150 Ts (oC) 200 10 2 10 1 1 I C (mA) 10 VCE = 1 V. Fig.3 Fig.2 Power derating curve. MCD139 handbook,0.3 halfpage DC current gain as a function of collector current; typical values. MCD140 6 handbook, halfpage fT (GHz) C re (pF) 0.2 4 0.1 2 0 0 0 2 4 VCB (V) 0 6 1997 Oct 29 2 3 I C (mA) 4 VCE = 1 V; f = 500 MHz; Tamb = 25 °C. IC = ic = 0; f = 1 MHz. Fig.4 1 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 4 Transition frequency as a function of collector current; typical values. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X MCD141 30 gain G UM gain MCD142 handbook,20 halfpage handbook, halfpage G UM (dB) (dB) 15 20 MSG MSG 10 10 5 0 0 0.5 0 1.0 1.5 2.0 2.5 I C (mA) 0 VCE = 1 V; f = 500 MHz. GUM = maximum unilateral power gain; MSG = maximum stable gain. Fig.6 0.5 1.0 1.5 2.0 2.5 I C (mA) VCE = 1 V; f = 1 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain. Gain as a function of collector current; typical values. Fig.7 MCD143 handbook,50 halfpage Gain as a function of collector current; typical values. MCD144 handbook,50 halfpage gain gain (dB) (dB) 40 40 G UM 30 30 20 20 G UM MSG MSG 10 10 0 10 10 2 10 3 f (MHz) 0 10 4 10 IC = 0.5 mA; VCE = 1 V. GUM = maximum unilateral power gain; MSG = maximum stable gain. Fig.8 1997 Oct 29 10 2 10 3 f (MHz) 10 IC = 1 mA; VCE = 1 V. GUM = maximum unilateral power gain; MSG = maximum stable gain. Gain as a function of frequency; typical values. Fig.9 5 Gain as a function of frequency; typical values. 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X MCD145 4 MCD146 4 handbook, halfpage handbook, halfpage F (dB) F (dB) f = 2 GHz 3 IC = 2 mA 3 1 GHz 1 mA 500 MHz 2 2 1 1 0 10−1 1 IC (mA) 0.5 mA 0 102 10 VCE = 1 V. 103 f (MHz) VCE = 1 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. 1 handbook, full pagewidth 0.5 2 6 dB n unstable regio 0.2 4 dB 0 0.2 0.5 1 2 5 10 10 * ∞ MSG 15.6 dB –j 0.2 stability circle 5 2.5 dB + j OPT F = 1.9 dB min 10 5 14 dB 12 dB 2 0.5 1 MCD147 IC = 1 mA; VCE = 1 V; f = 500 MHz; ZO = 50 Ω; Maximum stable gain = 15.6 dB; Fmin = 1.9 dB; Γopt = 0.85, 5°; Rn/50 = 2.4. Fig.12 Common emitter noise figure circles; typical values. 1997 Oct 29 104 6 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X 1 handbook, full pagewidth 0.5 2 stability circle 6 dB 0.2 n egio ble r a unst 4 dB OPT F min = 2 dB 5 3 dB + j 10 * 0 0.2 0.5 1 MSG 12.4 dB –j 2 5 10 ∞ 10 11 dB 5 0.2 9 dB 2 0.5 1 MCD148 IC = 1 mA; VCE = 1 V; f = 1000 MHz; ZO = 50 Ω; Maximum stable gain = 12.4 dB; Fmin = 2 dB; Γopt = 0.78, 14°; Rn/50 = 2.6. Fig.13 Common emitter noise figure circles; typical values. 1 stability circle handbook, full pagewidth 0.5 2 ion eg er bl sta 6 dB un OPT F = 2.4 dB min 4 dB 0.2 3 dB * 5 10 +j 0 0.2 MSG 0.5 9 dB 1 2 5 10 ∞ –j 10 7.5 dB 0.2 5 6 dB 2 0.5 1 MCD149 IC = 1 mA; VCE = 1 V; f = 2000 MHz; ZO = 50 Ω; Maximum stable gain = 8.9 dB; Fmin = 2.4 dB; Γopt = 0.72, 38°; Rn/50 = 1.9. Fig.14 Common emitter noise figure circles; typical values. 1997 Oct 29 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0.2 0 0.5 1 2 5 10 ∞ 40 MHz –j 10 3 GHz 5 0.2 2 0.5 MCD150 1 IC = 1 mA; VCE = 1 V; Zo = 50 Ω. Fig.15 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 45 o 135 o 3 GHz 180 o 40 MHz _ IC = 1 mA; VCE = 1 V. 1 2 3 4 5 0o _ 45 o 135 o _ 90 o MCD151 Fig.16 Common emitter forward transmission coefficient (S21); typical values. 1997 Oct 29 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X 90 o handbook, full pagewidth 45 o 135 o 3 GHz 180 o 0.5 0.4 0.3 0.2 0.1 0o 40 MHz _ 45 o _ 135 o _ 90 o IC = 1 mA; VCE = 1 V. MCD153 Fig.17 Common emitter reverse transmission coefficient (S12); typical values. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5 10 ∞ 40 MHz –j 10 5 0.2 3 GHz 2 0.5 1 MCD152 IC = 1 mA; VCE = 1 V; Zo = 50 Ω. Fig.18 Common emitter output reflection coefficient (S22); typical values. 1997 Oct 29 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B 1997 Oct 29 EUROPEAN PROJECTION 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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