PHILIPS TEA6850

INTEGRATED CIRCUITS
DATA SHEET
TEA6850
IF filter / amplifier / demodulator for
FM radio receivers
Preliminary specification
File under Integrated Circuits, IC01
July 1994
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
TEA6850
FEATURES
GENERAL DESCRIPTION
• Improved dynamic selectivity and sensitivity because of
tunable IF filter
The TEA6850 is a monolithic bipolar integrated circuit for
IF filtering, FM demodulation and level detection. Using IF
filters tuned by the demodulated signal, dynamic
selectivity and sensitivity are improved.
• Fully integrated, frequency matched FM demodulator
• High linearity
• Unweighted level detector output
• Soft mute
• MPX output for RDS and diversity
• Internal source selector.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
10
UNIT
VP
supply voltage (pin 7)
7
8.5
V
IP
supply current (pin 7)
14
17.5
21
mA
DS200
dynamic selectivity for 200 kHz
22
27
−
dB
61
67
−
dB
−
0.3
0.5
%
180
200
220
mV
−40
−
+85
°C
distance (EMF = 700 µV;
filter bandwidth = 50 kHz)
S/N
signal-to-noise ratio
(∆f = ±22.5 kHz; fm = 1 kHz)
THD
total harmonic distortion
(∆f = ±75 kHz; fm = 1 kHz)
VO
AF output signal at pin 4
(RMS value)
Tamb
operating ambient temperature
ORDERING INFORMATION
EXTENDED TYPE
NUMBER
TEA6850H
PACKAGE
PINS
PIN POSITION
MATERIAL
CODE
44
QFP
plastic
SOT307(1)
Note
1. SOT307-2; 1996 August 26.
July 1994
2
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Philips Semiconductors
3
IF filter / amplifier / demodulator for FM
radio receivers
July 1994
Preliminary specification
TEA6850
Fig.1 Diagram for adaptive application.
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
Fig.2 TEA6850H (adaptive version), printed- circuit board.
July 1994
4
TEA6850
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
TEA6850
PINNING
SYMBOL
PIN
DESCRIPTION
RDSOUT
1
output for RDS
CENABLE
2
chip enable
MPXIN
3
external audio frequency input (MPX signal)
MPX
4
audio frequency output (MPX signal)
LVLUNW
5
unweighted level output
MPXSEL
6
source selector for MPX signal
VP
7
supply voltage (8.5 V)
GND
8
ground (0 V)
VGAP
9
internal reference voltage
VUT2
10
reference voltage output
VUT1
11
reference voltage output
IFADJ
12
input for IF filter frequency adjustment
BWADJ
13
input for IF filter bandwidth adjustment
IFIN
14
IF signal input 1
IFINI
15
IF signal input 2
GAINADJ
16
input for mixer gain adjustment
n.c.
17
not connected
CRYSTAL
18
crystal oscillator input
GND
19
oscillator ground
n.c.
20
not connected
OUT300I
21
IF filter output (0°)
OUT300Q
22
IF filter output (90°)
CLIM1I
23
IF limiter feedback 1
CLIM2I
24
IF limiter feedback 2
CLIM3I
25
IF limiter feedback 3
CLIM4I
26
IF limiter feedback 4
CLIM1Q
27
IF limiter feedback 5
CLIM2Q
28
IF limiter feedback 6
CLIM3Q
29
IF limiter feedback 7
CLIM4Q
30
IF limiter feedback 8
LVLADJ
31
input for level adjustment
LVLWEI
32
weighted level output
IHP60
33
input for high-pass −3 dB adjustment
CHPMUTE
34
output of rectified high-pass signal
CMUTE
35
mute input
DEMOLOOP1
36
demodulator output 1
DEMOLOOP2
37
demodulator output 2
COP2
38
MPX correction output 2
CON2
39
MPX correction input 2
COO1
40
MPX correction output 1
July 1994
5
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
SYMBOL
PIN
TEA6850
DESCRIPTION
CON1
41
MPX correction input 1
IFLOOP1
42
IF loop filter output 1
IFLOOP2
43
IF loop filter output 2
IFLOOP3
44
IF loop filter output 3
Fig.3 Pin configuration.
July 1994
6
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
TEA6850
FUNCTIONAL DESCRIPTION
The first mixer stage at the input of the circuit is for mixing
the 10.7 MHz IF signal to 300 kHz. The IF filter has a
resonance frequency of 300 kHz (adjustable), tunable
from 50 kHz to 500 kHz, and a bandwidth of about 20 kHz
to 80 kHz tunable. Static filter response see Fig.5. The
limiter has a gain of approximately 90 dB, which is virtually
independent from temperature change. The demodulator
is frequency matched with the IF filter.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VP
supply voltage
−0.3
+12
V
IP
supply current
−
21
mA
Tstg
storage temperature
−55
+125
°C
Tamb
operating ambient temperature
−40
+85
°C
Ptot
total power dissipation
−
252
mW
VESD
electrostatic handling for all pins (note 1)
−
±300
V
Note to the Limiting Values
1. Charge device model class B: equivalent to discharging a 200 pF capacitor through a 0 Ω series resistor.
THERMAL RESISTANCE
SYMBOL
Rth j-a
July 1994
PARAMETER
THERMAL RESISTANCE
from junction to ambient in free air
65 K/W
7
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
TEA6850
DC CHARACTERISTICS
VP = 8.5 V; Tamb = +25 °C; all voltages referenced to ground unless otherwise specified.
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
VP
supply voltage
7
8.5
10
IP
supply current (TEA6850 enable)
14
17.5
21
mA
IP
supply current (TEA6850 disable)
320
400
480
µA
V1
voltage at pin 1
2.1
2.4
2.7
V
V2
voltage at pin 2
tbn
tbn
tbn
V
V3
voltage at pin 3
3.3
3.55
3.8
V
V4
voltage at pin 4
3.3
3.55
3.8
V
V5
voltage at pin 5
tbn
tbn
tbn
V
V6
voltage at pin 6
2.1
2.3
2.5
V
V12
voltage at pin 12
0.98
1.08
1.18
V
V13
voltage at pin 13
tbn
tbn
tbn
V
V14
voltage at pin 14
1.8
2
2.2
V
V15
voltage at pin 15
1.8
2
2.2
V
V16
voltage at pin 16
tbn
tbn
tbn
V
V18
voltage at pin 18
3.0
3.3
3.6
V
V21
voltage at pin 21
3.2
3.5
3.8
V
V22
voltage at pin 22
3.2
3.5
3.8
V
V23
voltage at pin 23
3.9
4.2
4.5
V
V24
voltage at pin 24
3.9
4.2
4.5
V
V25
voltage at pin 25
3.9
4.2
4.5
V
V26
voltage at pin 26
3.9
4.2
4.5
V
V27
voltage at pin 27
3.9
4.2
4.5
V
V28
voltage at pin 28
3.9
4.2
4.5
V
V29
voltage at pin 29
3.9
4.2
4.5
V
V30
voltage at pin 30
3.9
4.2
4.5
V
V31
voltage at pin 31
tbn
tbn
tbn
V
V32
voltage at pin 32
tbn
tbn
tbn
V
V33
voltage at pin 33
4.1
4.4
4.7
V
V34
voltage at pin 34
2.7
2.9
3.3
V
V35
voltage at pin 35
2.1
2.4
2.7
V
V36
voltage at pin 36
4.2
4.4
4.6
V
V37
voltage at pin 37
4.2
4.4
4.6
V
V38
voltage at pin 38
2.1
2.4
2.7
V
V39
voltage at pin 39
2.1
2.4
2.7
V
V40
voltage at pin 40
2.1
2.4
2.7
V
V41
voltage at pin 41
2.1
2.4
2.7
V
V42
voltage at pin 42
1.6
1.75
1.9
V
V43
voltage at pin 43
1.6
1.75
1.9
V
V44
voltage at pin 44
1.6
1.75
1.9
V
July 1994
8
V
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
SYMBOL
TEA6850
PARAMETER
MIN.
TYP.
MAX.
UNIT
Reference voltage source
V9
voltage at pin 9
2.4
2.55
2.7
V
V10
voltage at pin 10
2.95
3.25
3.55
V
V11
voltage at pin 11
0.98
1.08
1.2
V
TK
temperature coefficient of V10 and V11
−
3.3
−
10−3/K
AC CHARACTERISTICS
VP = 8.5 V; Tamb = +25 °C; f = 10.7 MHz with fm = 1 kHz, ±22.5 kHz deviaton (∆f = ±22.5 kHz); EMF = 30 mV RMS;
50 µs de-emphasis; filter bandwidth = 50 kHz overall; −6 dB gain from EMF to IF filter output (pins 21 and 22); in noise
frequency band for S/N measurements 300 Hz to 15 kHz; S/N stereo measurement with ideal decoder; measurements
taken in Fig.4 unless otherwise specified.
SYMBOL
DS100
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dynamic selectivity for 100 kHz
EMF = 700 µV
13
16
−
dB
distance
EMF = 14 mV
10
12
−
dB
dynamic selectivity for 200 kHz
EMF = 700 µV
22
27
−
dB
distance
EMF = 14 mV
18
22
−
dB
S/N
signal-to-noise ratio
mono
61
67
−
dB
stereo
54
57
−
dB
EMF
IF signal
S/N = 26 dB; V5 = 5 V
−
20
45
µV
S/N = 46 dB; V5 = 5 V
−
130
370
µV
input voltage for start of limiting
−3 db at MPX output;
−
10
20
µV
(RMS value)
V5 = 5V
total harmonic distortion
∆f = 75 kHz
−
0.3
0.5
%
DS200
EMF
THD
D57
∆f = 100 kHz
−
0.5
1
%
fm = 8 kHz; ∆f = 75 kHz
−
3
5
%
attenuation of third harmonic
fm = 19 kHz; ∆f = 6.75 kHz;
14
20
−
dB
measured at pin 4
measured at 57 kHz
300
−
−
mV
compared to 57 kHz
∆f = 2 kHz
EMF
admissible maximum input voltage
A14-21,22
gain to IF filter output (adjustable)
−
−6
−
dB
∆ADC
downconverter adjustable range
−10
−
+6
dB
VO
MPX output voltage (RMS value)
∆VO
MPX output voltage ripple
(RMS value)
July 1994
180
200
220
mV
1 kHz < fmod < 15 kHz
−
−
±2
dB
23 kHz < fmod < 53 kHz
−
−
±2
dB
9
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
SYMBOL
RR
PARAMETER
power supply ripple rejection
TEA6850
CONDITIONS
f = 200 Hz to 20 kHz;
MIN.
TYP.
MAX.
UNIT
38
−
−
dB
−
50
−
dB
40
44
−
dB
Vrmax = 100 mV (on VP);
ripple at MPX output
αAM
AM suppression
fmod = 400 Hz;
modulation = 30%
500 µV < EMF < 100 mV
RDS output (pin 1)
ZO
output impedance
−
−
1
kΩ
RL
load resistance
15
−
−
kΩ
CL
load capacitance
−
−
50
pF
V1
RDS signal output voltage
4
6
−
mV
tswitch
switch on time
−
−
500
ms
fmod = 57 kHz; ∆f = 2 kHz;
RL = ∞; CL = 0
10.7 MHz input (pins 14 and 15)
Ri
input resistance
3.5
5
6.5
kΩ
Ci
input capacitance
−
−
5
pF
V14
residual oscillator signal
fosc/2 = 11 mHz; RG = 300 Ω −
−
30
µV
Crystal
f0
standard frequency
−
22
−
MHz
∆f0/f0
frequency tolerance
−100
−
+100
ppm
C0
shunt capacitance
−
−
7
pF
RS
equivalent series resistance
−
−
120
Ω
∆T0/T0
temperature drift
−50
−
+ 50
ppm
13
20
40
mV
7
12
14
mV
−40 °C < T < +85 °C
Oscillator (measured at pin 18)
V18
22 MHz output level
OUT300Q, I output (pins 21 and 22; ROUT300 = 33 KΩ; see Fig.4)
V21,22
output voltage
EMF = 75 mV
|V21|−|V22|
I, Q output level difference
−
−
1.5
mV
TC
temperature coefficient of
−
3.3
−
10−3/K
−
1.26
−
kΩ
−10
0
+10
kHz
−5
0
+3
kHz
70
80
−
kHz
−
20
−
kHz
output voltage
ZO
output impedance
Turnable filter (−40 °C < T < +85 °C; filter response see Fig.5)
∆F0
frequency temperature shift
∆B
bandwidth temperature shift
Bmax
maximum adjustable
V13 = 0 V
bandwidth
Bmin
minimum adjustable
bandwidth
July 1994
10
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
SYMBOL
PARAMETER
TEA6850
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Level amplifier (pin 5; typical curve and adjusting range see Fig.7)
ZO
output impedance
8
10
12
kΩ
TC
temperature coefficient of
−
3.3
−
10−3/K
2.35
2.6
V
output voltage
V5
output voltage
α = −3 dB for EMF = 200µV; 2.1
EMF = 100 µV
EMF = 1 mV
2.95
3.3
3.65
V
S
slope of output voltage
100 µV < EMF < 10 mV
−
950
−
mV/20
dB
V5
level shift adjustment range
EMF = 0
±0.5
±1.0
±1.5
V
−
200
−
µV
100
−
300
µV
29
32
35
dB/Dec
−35
−32
−29
dB
Soft mute (typical curves see Fig.8)
level dependence
EMF
start of mute (α = −3 dB) for
IF input (RMS value)
EMF
−3 dB adjustment range for IF input
SM
mute slope at −15 dB
VMPX/VMPX0
muting depth
EMF < 5 µV; α = −3 dB for
EMF = 200 µV
I32
τmute
charge current
V5 = 4.5 V; V32 = 3.9 V
10
13
17
µA
discharge current
V5 = 4.5 V; V32 = 5.1 V
20
26
34
µA
0.75
1
1.3
ms
1.5
2
2.6
ms
−12
−10
−8
dB
165
185
205
mV
time constant from unmuted to
muted
τunmute
time constant from muted to
unmuted
high-pass dependence (see Fig.9)
VMPX/VMPX0
muting depth
V1
voltage at pin 1 (RMS value)
I34
charge current
V34 = 0 V
140
200
260
µA
discharge current
V34 = 5 V
0.7
1
3
µA
residual DC offset at MPX output
EMF < 80 µV
−
−
60
mV
80 µV < EMF < 2 mV
−
−
60
mV
−
−
100
Ω
f = 60 kHz;
VMPX/VMPX0 = −3 dB
∆V4
MPX output (pin 4)
RO
output resistance
RL
load resistance
3
−
−
kΩ
CL
load capacitance
−
−
50
pF
V4
clipping DC voltage
1.5
−
7
V
V4
residual signal of 300 kHz and
−
−
10
mV
V4 ≤ 1 V
higher harmonics (RMS value)
July 1994
11
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
SYMBOL
PARAMETER
TEA6850
CONDITIONS
MIN.
TYP.
MAX.
UNIT
CENABLE (pin 2)
V2
RI
voltage range
chip enable
−0.3
+0.6
+1.1
V
chip disable
1.9
2.4
5.5
V
100
−
−
kΩ
input resistance
Source selector isolation
(f < 12.5 kHz; mode TEA6850 signal: V6 > 1.9 V or pin not connected; mode external signal: V6 < 1.1 V)
VMPX/VMPXIN
isolation of external signal
mode TEA6850 signal;
−70
−80
−
dB
−70
−80
−
dB
1
−
−
MΩ
∆f = 0; VMPXIN = 200 mV;
f = 12.5 kHz
VMPX/VMPX0
isolation of TEA6850 signal
mode external signal;
∆f = 22.5 kHz;
Rg (pin 3) < 10 kΩ;
fmod = 12.5 kHz
RI
input resistance at pin 6
V6 > 1.9 V
V6 < 1.1 V
input resistance at pin 3
I6
July 1994
input current
Vsselect < 1.1 V
12
3
−
−
kΩ
23
30
37
kΩ
−
−
20
µA
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Philips Semiconductors
13
IF filter / amplifier / demodulator for FM
radio receivers
July 1994
Preliminary specification
TEA6850
Fig.4 Test circuit.
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
Fig.5 IF filter frequency response.
Fig.6 High-pass frequency response (see Fig.1).
July 1994
14
TEA6850
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
Fig.7 LEVELAMP output voltage.
Fig.8 Soft mute curve.
July 1994
15
TEA6850
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
Fig.9 High-pass mute curve.
Fig.10 Temperature dependence of α − 3 dB and THD.
July 1994
16
TEA6850
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
APPENDIX
Alignment procedure for the test circuit (see Fig.4)
1. Connect a spectrum analyser to pin 21 or pin 22. Set
centre frequency to 300 kHz and frequency span from
200 kHz to 400 kHz.
2. Set frequency of RF-generator to 10.7 MHz, EMF-level
to 4 mV RMS, modulation frequency to 1 kHz and
frequency deviation to 75 kHz.
3. Turn poti P7 in the mid position. Align centre frequency
of the tunable IF-filter with poti P5. The alignment is
correct, if the spectrum measured at pin 21 is
symmetric.
4. Set frequency deviation of RF-generator to zero (EMF
= 4 mV RMS). Align the downconverter gain with poti
P1. The alignment is correct, if the level at pin 21 is 2
mV RMS.
5. Short pin 36 and pin 37. Set frequency of
RF-generator to 10.6 MHz respectively 10.8 MHz
(EMF = 4 mV RMS, ∆f = 0). Align bandwidth of the
tunable IF-filter with poti P7. The alignment is correct,
if the level measured at 200 kHz respectively 400 kHz
is 21 dB below the maximum. Remove the short.
6. Set frequency of the RF-generator to 10.7 MHz,
EMF-level to 20 mV RMS, modulation frequency to 1
kHz and frequency deviation to 22.5 kHz. Measure
level of the 1 kHz signal at pin 4. Set the EMF-level to
200 µV. Align start of mute (α − 3 dB) with poti P2.
7. Set EMF-level back to 20 mV RMS and vary the
modulation frequency. Align MPX output voltage ripple
(see ∆VO in the AC CHARACTERISTICS) with poti P6.
July 1994
17
TEA6850
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
TEA6850
PACKAGE OUTLINE
QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm
SOT307-2
c
y
X
A
33
23
34
22
ZE
e
E HE
A A2
wM
(A 3)
A1
θ
bp
Lp
pin 1 index
L
12
44
1
detail X
11
wM
bp
e
ZD
v M A
D
B
HD
v M B
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HD
HE
L
Lp
v
w
y
mm
2.10
0.25
0.05
1.85
1.65
0.25
0.40
0.20
0.25
0.14
10.1
9.9
10.1
9.9
0.8
12.9
12.3
12.9
12.3
1.3
0.95
0.55
0.15
0.15
0.1
Z D (1) Z E (1)
1.2
0.8
1.2
0.8
θ
o
10
0o
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
95-02-04
97-08-01
SOT307-2
July 1994
EUROPEAN
PROJECTION
18
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
TEA6850
SOLDERING
Wave soldering
Introduction
Wave soldering is not recommended for QFP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
If wave soldering cannot be avoided, the following
conditions must be observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
• The footprint must be at an angle of 45° to the board
direction and must incorporate solder thieves
downstream and at the side corners.
Reflow soldering
Even with these conditions, do not consider wave
soldering the following packages: QFP52 (SOT379-1),
QFP100 (SOT317-1), QFP100 (SOT317-2),
QFP100 (SOT382-1) or QFP160 (SOT322-1).
Reflow soldering techniques are suitable for all QFP
packages.
The choice of heating method may be influenced by larger
plastic QFP packages (44 leads, or more). If infrared or
vapour phase heating is used and the large packages are
not absolutely dry (less than 0.1% moisture content by
weight), vaporization of the small amount of moisture in
them can cause cracking of the plastic body. For more
information, refer to the Drypack chapter in our “Quality
Reference Handbook” (order code 9397 750 00192).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
July 1994
19
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM
radio receivers
TEA6850
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
July 1994
20