INFINEON Q62702-B915

BBY 57-02W
Silicon Tuning Diode
Preliminary data
• Excellent linearity
• High Q hyperabrupt tuning diode
2
• Low series inductance
• High capacitance ratio
• Designed for low tuning voltage operation
1
for VCO’s in mobile communications equipment
VES05991
• For control elements such as TCXOs and VCXOs
Type
Marking
Ordering Code
Pin Configuration
Package
BBY 57-02W
5
Q62702-B915
1=C
SCD-80
2=A
Maximum Ratings
Parameter
Symbol
Diode reverse voltage
VR
10
V
Forward current
IF
20
mA
Operating temperature range
T op
-55 ...+150
°C
Storage temperature
T stg
-55 ...+150
Semiconductor Group
Semiconductor Group
11
Value
Unit
Jul-30-1998
1998-11-01
BBY 57-02W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
IR
-
-
1
IR
-
-
100
DC characteristics
Reverse current
nA
VR = 8 V
Reverse current
VR = 8 V, TA = 65 °C
AC characteristics
CT
Diode capacitance
VR = 1 V, f = 1 MHz
pF
16.5
17.5
18.6
VR = 2.5 V, f = 1 MHz
-
8.7
-
VR = 3 V, f = 1 MHz
-
7.1
-
VR = 4 V, f = 1 MHz
4
4.73
5.5
CT1/C T3
-
2.45
-
CT1/C T4
3
3.7
4.5
rs
-
0.3
-
Ω
CC
-
0.09
-
pF
Ls
-
0.6
-
nH
Capacitance ratio
-
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance
VR = 1 V, f = 470 MHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group
Semiconductor Group
22
Jul-30-1998
1998-11-01
BBY 57-02W
Diode capacitance CT = f (V R)
f = 1MHz
Temperature coefficient of the diode
capacitance TCc = f (VR)
10 -1
40
pF
CT
1/°C
T Cc
30
10 -2
25
20
15
10 -3
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
10 -4
0.0
4.0
VR
0.5
1.0
1.5
2.0
2.5
3.0
V
4.0
VR
Normalized diode capacitance
C(TA) / C(25°C)= f (T A)
f = 1MHz, VR = Parameter
1.04
-
1V
CTA
1.02
/C 25°C
4V
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-30
-10
10
30
50
70
°C
100
TA
Semiconductor Group
Semiconductor Group
33
Jul-30-1998
1998-11-01