DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D423 BYD72 series Ultra fast low-loss controlled avalanche rectifiers Preliminary specification 1998 Dec 03 Philips Semiconductors Preliminary specification Ultra fast low-loss controlled avalanche rectifiers BYD72 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass SOD120 package through Implotec(1) technology. This package is • High maximum operating temperature hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability handbook, k halfpage a • Available in ammo-pack. MGL571 Fig.1 Simplified outline (SOD120) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER CONDITIONS − UNIT 50 V BYD72B − 100 V BYD72C − 150 V BYD72D − 200 V BYD72E − 250 V BYD72F − 300 V BYD72G − 400 V BYD72A − 50 V BYD72B − 100 V continuous reverse voltage BYD72C − 150 V BYD72D − 200 V BYD72E − 250 V BYD72F − 300 V − 400 V − 1.02 A − 0.95 A − 15 A BYD72G IF(AV) MAX. repetitive peak reverse voltage BYD72A VR MIN. average forward current BYD72A to D BYD72E to G IFSM non-repetitive peak forward current Tstg storage temperature Tj junction temperature 1998 Dec 03 Tamb = 25 °C; printed-circuit board mounting, pitch 5 mm, see Fig.8; averaged over any 20 ms period; see Figs 2 and 3 t = 10 ms half sine wave; Tj = 25 °C; VR = VRRMmax see Fig.7 2 −65 +175 °C −65 +175 °C Philips Semiconductors Preliminary specification Ultra fast low-loss controlled avalanche rectifiers BYD72 series ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS UNIT IF = 1 A; see Figs 4 and 5 BYD72A to D 0.98 V BYD72E to G 1.05 V 1 µA 100 µA 25 ns 50 ns BYD72A to D 1.55 V BYD72E to G 3.40 V IR reverse current trr reverse recovery time VR = VRRMmax VR = VRRMmax; Tj = 165 °C; see Fig.6 BYD72A to D when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.9 BYD72E to G VFRM MAX. forward recovery voltage when switched to IF = 1 A in 50 ns THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 150 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer ≥40 µm, pitch 5 mm; see Fig.8. 1998 Dec 03 3 Philips Semiconductors Preliminary specification Ultra fast low-loss controlled avalanche rectifiers BYD72 series GRAPHICAL DATA MDA811 2 MDA812 1 handbook, halfpage handbook, halfpage (A) 1.6 (A) 0.8 1.2 0.6 0.8 0.4 0.4 0.2 IF(AV) IF(AV) 0 0 40 0 80 120 160 200 Tamb (°C) BYD72A to D a = 1.42; VR = VRRMmax; δ = 0.5. 80 120 160 200 Tamb (°C) BYD72E to G a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.8. Device mounted as shown in Fig.8. Fig.2 40 0 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). Fig.3 MDA820 10 IF Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MDA821 10 IF handbook, halfpage handbook, halfpage (A) 8 (A) 8 6 6 4 4 2 2 0 0 0.4 0 0.8 1.2 1.6 VF (V) 2 0 0.4 BYD72A to D Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. BYD72E to G Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Fig.4 Fig.5 Forward current as a function of forward voltage; typical values. 1998 Dec 03 4 0.8 1.2 1.6 VF (V) 2 Forward current as a function of forward voltage; typical values. Philips Semiconductors Preliminary specification Ultra fast low-loss controlled avalanche rectifiers BYD72 series MDA825 10 MDA814 200 Tj handbook, halfpage handbook, halfpage IR (µA) (°C) 160 1 120 G 80 10−1 40 10−2 Fig.6 0 40 80 120 160 0 200 Tj (°C) 0 Fig.7 Reverse current as a function of junction temperature; typical values. 50 handbook, halfpage 5 3 50 2 3 MBK812 Dimensions in mm. Fig.8 Device mounted on a printed-circuit board. 1998 Dec 03 5 100 200 300 VR (V) 400 Maximum permissible junction temperature as a function of reverse voltage. Philips Semiconductors Preliminary specification Ultra fast low-loss controlled avalanche rectifiers handbook, full pagewidth BYD72 series IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.9 Test circuit and reverse recovery time waveform and definition. 1998 Dec 03 6 MAM057 Philips Semiconductors Preliminary specification Ultra fast low-loss controlled avalanche rectifiers BYD72 series PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD120 (1) b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b D max. G1 max. L min. mm 0.6 2.15 3.0 28 0 2 4 mm scale Note 1. The marking band indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-05-25 SOD120 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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