PHILIPS BLF647

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D392
BLF647
UHF power LDMOS transistor
Product specification
Supersedes data of 2001 Aug 02
2001 Nov 27
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
FEATURES
PINNING - SOT540A
• High power gain
PIN
DESCRIPTION
• Easy power control
1
drain 1
• Excellent ruggedness
2
drain 2
• Source on underside eliminates DC isolators, reducing
common mode inductance
3
gate 1
4
gate 2
5
source, connected to flange
• Designed for broadband operation (HF to 800 MHz)
• Internal input damping for excellent stability over the
whole frequency range.
1
2
APPLICATIONS
• Communication transmitter applications in the
HF to 800 MHz frequency range.
5
3
4
Top view
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
MBK777
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION
CW, class-AB
2-tone,
class-AB
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
600
28
120
>14.5
>55
−
f1 = 600; f2 = 600.1
28
120 (PEP)
>14.5
>40
≤−26
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
65
V
VGS
gate-source voltage
−
±15
V
ID
drain current (DC)
Ptot
total power dissipation
Tstg
Tj
−
18
A
−
290
W
storage temperature
−65
+150
°C
junction temperature
−
200
°C
Tmb ≤ 25 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2001 Nov 27
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
thermal resistance from junction to mounting base
Rth mb-h
thermal resistance from mounting base to heatsink
VALUE
Tmb = 25 °C; Ptot = 290 W
UNIT
0.6
K/W
0.2
K/W
CHARACTERISTICS
Tj = 25 °C per section unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 1.4 mA
65
−
−
V
VGSth
gate-source threshold voltage
VDS = 20 V; ID = 140 mA
4
−
5.5
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
−
−
1.2
µA
IDSX
drain cut-off current
VGS = VGSth + 9 V; VDS = 10 V
18
−
−
A
IGSS
gate leakage current
VGS = ±15 V; VDS = 0
−
−
25
nA
gfs
forward transconductance
VDS = 20 V; ID = 4 A
−
4
−
S
RDSon
drain-source on-state resistance
VGS = VGSth + 9 V; ID = 4 A
−
160
−
mΩ
Ciss
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz;
note 1
−
80
−
pF
Coss
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
43
−
pF
Crss
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
6
−
pF
Note
1. Capacitance values of the die only.
MGW546
100
handbook, halfpage
Coss
(pF)
80
60
40
20
0
0
10
20
30
40
50
VDS (V)
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.2
Output capacitance as a function of
drain-source voltage; typical values per
section.
2001 Nov 27
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.2 K/W, unless otherwise specified.
MODE OF OPERATION
f
(MHz)
Gp
(dB)
ηD
(%)
dim
(dBc)
600
28
120
>14.5
>55
−
28
120 (PEP)
>14.5
>40
≤−26
800
32
150
typ. 12.5
typ. 60
−
f1 = 800; f2 = 800.1
32
150 (PEP)
typ. 13
typ. 45
typ. −30
CW, class-AB
2-tone, class-AB
PL
(W)
f1 = 600; f2 = 600.1
CW, class-AB
2-tone, class-AB
VDS
(V)
Ruggedness in class-AB operation
The BLF647 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 28 V; f = 100 MHz at rated load power.
The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions.
Impedances (per section)
At f = 600 MHz, PL = 120 W, VDS = 28 V and IDQ = 1 A: Zin = 1.0 + j2.0 Ω and ZL = 2.7 + j0.7 Ω.
At f = 800 MHz, PL = 150 W, VDS = 32 V and IDQ = 1 A: Zin = 1.0 + j3.8 Ω and ZL = 1.8 + j0.7 Ω.
2001 Nov 27
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
Application at 600 MHz
MGW541
MGW540
20
0
80
handbook, halfpage
Gp
(dB)
handbook, halfpage
ηD
(%)
Gp
15
dim
(dBc)
−20
60
d3
ηD
10
40
−40
5
20
−60
0
0
50
100
150
PL (PEP) (W)
−80
0
200
Th = 25 °C; VDS = 28 V; IDQ = 1 A.
2-tone: f1 = 600 MHz (−6 dB); f2 = 600.1 MHz (−6 dB)
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Fig.4
MGW542
20
80
handbook, halfpage
Gp
(dB)
ηD
(%)
Gp
15
60
ηD
10
40
5
20
0
0
50
100
0
200
150
PL (W)
Th = 25 °C; VDS = 28 V; IDQ = 1 A; CW, class-AB; f = 600 MHz;
measured in 600 MHz test circuit.
Fig.5
Power gain and drain efficiency as functions
of load power; typical values.
2001 Nov 27
0
50
100
150
PL (PEP) (W)
200
Th = 25 °C; VDS = 28 V; IDQ = 1 A.
2-tone: f1 = 600 MHz (−6 dB); f2 = 600.1 MHz (−6 dB)
measured in 600 MHz test circuit.
measured in 600 MHz test circuit.
Fig.3
d5
5
Intermodulation distortion as a function of
peak envelope output power; typical values.
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C20
3
C7
R2
L14
L5
L15
L3
L7
C18
L9
L11
C15
C1
50 Ω
input
C19
L1
6
B1
C3
C11
C5
C10
C6
C13
C2
L10
L13
L16
C9
C16
L8
L4
R3
L12
MGW539
TR1
R1
50 Ω
C17 output
B2
C14
C12
L2
+ Vbias
R4
8
Philips Semiconductors
UHF power LDMOS transistor
handbook, full pagewidth
2001 Nov 27
+ VD
L6
C8
Product specification
Fig.6 Class-AB common source 600 MHz test circuit.
BLF647
Dimensions in mm.
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
List of components class-AB 600 MHz test circuit (see Figs 6 and 7)
COMPONENT
DESCRIPTION
VALUE
C1, C2
multilayer ceramic chip capacitor; note 1
30 pF
C3
multilayer ceramic chip capacitor; note 1
8.2 pF
C5
multilayer ceramic chip capacitor; note 1
16 pF
C6
Tekelec trimmer
0.6 to 7.5 pF
C7, C8
multilayer ceramic chip capacitor; note 1
100 pF
DIMENSIONS
C9
electrolytic capacitor
10 µF
C10
multilayer ceramic chip capacitor; note 2
2 pF
C11, C12
multilayer ceramic chip capacitor; note 2
10 pF
C13
multilayer ceramic chip capacitor; note 2
8.2 pF
C14
multilayer ceramic chip capacitor; note 2
1.5 pF
C15, C16, C17
multilayer ceramic chip capacitor; note 2
100 pF
C18
SMD capacitor
1 µF
C19
electrolytic capacitor
470 µF
C20
electrolytic capacitor
100 µF
L1, L2
semi rigid coax UT70-25
Z = 25 Ω ±1.5 Ω 30.6 mm
L3, L4
stripline; note 3
15 × 10 mm
L5, L6
stripline; note 3
5.5 × 15 mm
L7, L8
stripline; note 3
10 × 10 mm
L9, L10
stripline; note 3
15 × 5 mm
L11, L12
stripline; note 3
48.5 × 2.4 mm
L13
stripline; note 3
10 × 2.4 mm
CATALOGUE
No.
2222 595 16754
L14
ferrite
L15, L16
Coilcraft SMD coil 1008CS-102XKBC
1 µH
B1
semi rigid coax (lambda/2)
Z = 50 Ω ±1.5 Ω lambda/2
B2
semi rigid coax balun UT70-25
Z = 25 Ω ±1.5 Ω 48.5 mm
R1
resistor
1 kΩ
R2, R3
resistor
100 Ω
R4
resistor
3,3 Ω
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 180R or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (εr = 2.2); thickness 0.79 mm.
2001 Nov 27
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
95
handbook, full pagewidth
95
80
+Vbias
+VD
C20
R1
C9
L14
R2
L15
C7
R4
B2
C18
L1
C3 C5
C2
L2
C6
3
C8
BLF647
B1
C1
C11 C13
C10
L16
C12
8
C14
C15
C16 C17
C19
R3
MGW547
Dimensions in mm.
The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.7 Printed-circuit board and component layout for class-AB 600 MHz test circuit.
2001 Nov 27
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
Application at 800 MHz
MGW543
20
MGW544
0
80
handbook, halfpage
handbook, halfpage
ηD
(%)
Gp
(dB)
15
Gp
dim
(dBc)
60
−20
40
−40
20
−60
d3
d5
10
ηD
5
0
0
−80
0
200
300
PL (PEP) (W)
100
Th = 25 °C; VDS = 32 V; IDQ = 1 A.
2-tone: f1 = 800 MHz (−6 dB); f2 = 800.1 MHz (−6 dB)
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Fig.9
MGW545
20
80
handbook, halfpage
ηD
(%)
Gp
(dB)
15
60
Gp
10
40
ηD
5
20
0
0
50
100
0
200
150
PL (W)
Th = 25 °C; VDS = 32 V; IDQ = 1 A; CW, class-AB; f = 800 MHz;
measured in 800 MHz test circuit.
Fig.10 Power gain and drain efficiency as functions
of load power; typical values.
2001 Nov 27
100
200
300
PL (PEP) (W)
Th = 25 °C; VDS = 32 V; IDQ = 1 A.
2-tone: f1 = 800 MHz (−6 dB); f2 = 800.1 MHz (−6 dB)
measured in 800 MHz test circuit.
measured in 800 MHz test circuit.
Fig.8
0
9
Intermodulation distortion as a function of
peak envelope output power; typical values.
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C20
3
C7
R2
3
L14
L5
L15
L3
L7
C18
L9
L11
C15
C1
50 Ω
input
C19
L1
C10
B1
C12
C14
C5
C11
C13
L13
10
C2
L10
L16
C9
C16
L8
L4
R3
L12
MGW538
TR1
R1
50 Ω
C17 output
B2
C6
L2
+ Vbias
R4
8
Philips Semiconductors
UHF power LDMOS transistor
ok, full pagewidth
2001 Nov 27
+ VD
L6
C8
Product specification
Fig.11 Class-AB common source 800 MHz test circuit.
BLF647
Dimensions in mm.
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
List of components class-AB 800 MHz test circuit (see Figs 11 and 12)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
C1, C2
multilayer ceramic chip capacitor; note 1
30 pF
C5
multilayer ceramic chip capacitor; note 1
10 pF
C6
tekelec trimmer
0.6 to 7.5 pF
C7, C8
multilayer ceramic chip capacitor; note 1
100 pF
C9
electrolytic capacitor
10 µF
C10, C11
multilayer ceramic chip capacitor; note 2
8.2 pF
C12, C13
multilayer ceramic chip capacitor; note 2
10 pF
C14
multilayer ceramic chip capacitor; note 2
4.7 pF
C15, C16
multilayer ceramic chip capacitor; note 2
100 pF
C17
multilayer ceramic chip capacitor; note 2
20 pF
C18
SMD capacitor
1 µF
C19
electrolytic capacitor
470 µF
C20
electrolytic capacitor
100 µF
L1, L2
semi rigid coax UT70-25
Z = 25 Ω ±1.5 Ω 30.6 mm
L3, L4
stripline; note 3
15 × 10 mm
L5, L6
stripline; note 3
5.5 × 15 mm
L7, L8
stripline; note 3
10 × 10 mm
L9, L10
stripline; note 3
15 × 5 mm
L11, L12
stripline; note 3
48.5 × 2.4 mm
L13
stripline; note 3
10 × 2.4 mm
L14
ferrite
L15, L16
Coilcraft SMD coil 1008CS-102XKBC
1 µH
B1
semi rigid coax (lambda/2)
Z = 50 Ω ±1.5 Ω lambda/2
B2
semi rigid coax balun UT70-25
Z = 25 Ω ±1.5 Ω 48.5 mm
R1
resistor
1 kΩ
R2, R3
resistor
100 Ω
R4
resistor
3,3 Ω
CATALOGUE
No.
2222 595 16754
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 180R or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (εr = 2.2); thickness 0.79 mm.
2001 Nov 27
11
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
95
handbook, full pagewidth
95
80
+VD
+Vbias
C20
R1
C9
L14
R2
L15
C7
R4
B2
C18
L1
C2
L2
C5
C6
3
C8
BLF647
B1
C1
L16
C11
C13
C10 C12
3
C14
8
C15
C16 C17
C19
R3
MGW548
Dimensions in mm.
The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.12 Printed-circuit board and component layout for class-AB 800 MHz test circuit.
2001 Nov 27
12
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
PACKAGE OUTLINE
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
SOT540A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
H
c
2
E1
p
U2
5
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
5.77
5.00
8.51
8.26
0.15
0.10
inches
D
D1
e
E
E1
22.05 22.05
10.26 10.31
10.21
21.64 21.64
10.06 10.01
F
H
1.78
1.52
H1
15.75 18.72
14.73 18.47
p
Q
q
U1
U2
w1
w2
w3
3.38
3.12
2.72
2.46
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.25
0.227 0.335 0.006 0.868 0.868
0.404 0.406 0.070 0.620 0.737 0.133 0.107
1.345 0.390
1.100
0.010 0.020 0.010
0.402
0.197 0.325 0.004 0.852 0.852
0.396 0.394 0.060 0.580 0.727 0.123 0.097
1.335 0.380
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
99-08-27
99-12-28
SOT540A
2001 Nov 27
EUROPEAN
PROJECTION
13
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Nov 27
14
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
NOTES
2001 Nov 27
15
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA73
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/03/pp16
Date of release: 2001
Nov 27
Document order number:
9397 750 08838