2N7334 Qualified Levels: JAN, JANTX, and JANTXV QUAD N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/597 DESCRIPTION This 2N7334 device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES MO-036AB Package • JEDEC registered 2N7334 number. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/597. • RoHS compliant versions available (commercial grade only). APPLICATIONS / BENEFITS • • • High frequency operation. Lightweight. ESD rated to class 1A. MAXIMUM RATINGS @ T A = +25 ºC unless otherwise noted. Parameters / Test Conditions Symbol Operating & Storage Temperature Thermal Resistance, Junction to Ambient T op , T stg Value Unit °C ºC/W Gate – Source Voltage V GS -55 to +150 90 50 ± 20 Continuous Drain Current @ T C = +25 °C I D1 1.0 A Continuous Drain Current @ T C = +100 °C I D2 0.6 A PT 1.4 W MAX R ds(on) 0.70 1.4 Ω 1 die 4 die Max. Power Dissipation @ T C = +25 ºC (free air) (1) R ӨJA V (1, 2) Maximum Drain to Source On State Resistance @ T J = +25 ºC @ T J = +150 ºC Collector Efficiency IS 1.0 A Single Pulse Avalanche Energy Capability E AS 75 MJ Repetitive Avalanche Energy Capability E AR .14 MJ Rated Avalanche Current (repetitive and nonrepetitive) I AR 1.0 A Off-State Current I DM 4.0 A (pk) Notes: 1. Derated linearly 11 mW/°C for T C > +25 °C. 2. The following formula derives the maximum theoretical I D limit. I D is limited by package and internal wires and may also be limited by pin diameter: MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com 3. I DM = 4 x I D1 as calculated in note 2. T4-LDS-0212, Rev. 2 (121516) ©2012 Microsemi Corporation Page 1 of 6 2N7334 MECHANICAL and PACKAGING • • • • • CASE: Ceramic, lid: alloy 42, Au over Ni plating. TERMINALS: Alloy 42, Au over Ni plating, solder dipped. RoHS compliant without solder dipping on commercial grade only. MARKING: Manufacturer’s ID, part number, date code. WEIGHT: Approx. 1.3 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N7334 (e3) Reliability Level JAN=JAN level JANTX=JANTX level JANTXV=JANTXV level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol ID IF TC V DD V DS V GS Drain current Forward current Case temperature Drain supply voltage Drain to source voltage Gate to source voltage T4-LDS-0212, Rev. 2 (121516) ©2012 Microsemi Corporation Page 2 of 6 2N7334 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions Symbol Min. V (BR)DSS 100 V GS(th)1 V GS(th)2 V GS(th)3 2.0 1.0 Max. Unit OFF CHARACTERTICS Drain-Source Breakdown Voltage V GS = 0 V, I D = 1m A Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = 0.25mA V DS ≥ V GS , I D = 0.25 mA, T j = +125 °C V DS ≥ V GS , I D = 0.25 mA, T j = -55 °C Gate Current V GS = ±20 V, V DS = 0 V V GS = ±20 V, V DS = 0 V, T j = +125 °C Drain Current V GS = 0 V, V DS = 80 % of rated V DS V GS = 0 V, V DS = 80 % of rated V DS , T j = +125 °C Static Drain-Source On-State Resistance V GS = 10 V, I D = 0.60 A V GS = 10 V, I D = 1.0 A T j = +125 °C V GS = 10 V, I D = 0.60 A Diode Forward Voltage V GS = 0 V, I D = 1.0 A V 4.0 V 5.0 I GSS1 I GSS2 ±100 ±200 nA I DSS1 I DSS2 25 0.25 µA mA r DS(on)1 r DS(on)2 0.70 0.80 Ω Ω r DS(on)3 1.4 Ω V SD 1.5 V Max. Unit 15 7.5 7.5 nC Max. Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol Q g(on) Q gs Q gd SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: I D = 1.0 A, V GS = 10 V, Turn-on delay time Rinse time Gate drive impedance = 7.5 Ω, Turn-off delay time V DD = 50 V Fall time di/dt = 100 A/µs, V DD ≤ 30 V, Diode Reverse Recovery Time I D = 1.0 A T4-LDS-0212, Rev. 2 (121516) Min. Condition B ©2012 Microsemi Corporation Symbol Min. t d(on) tr t d(off) tf 20 25 40 40 t rr 200 ns ns Page 3 of 6 2N7334 Thermal Response (ZthJA) GRAPHS t 1 , Rectangle Pulse Duration (seconds) ID DRAIN CURRENT (AMPERES) FIGURE 1 – Thermal Response Curves T C , CASE TEMPERATURE (°C) FIGURE 2 - Maximum Drain Current vs Case Temperature T4-LDS-0212, Rev. 2 (121516) ©2012 Microsemi Corporation Page 4 of 6 2N7334 ID DRAIN CURRENT (AMPERES) GRAPHS (continued) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3 - Maximum Safe Operating Area T4-LDS-0212, Rev. 2 (121516) ©2012 Microsemi Corporation Page 5 of 6 2N7334 PACKAGE DIMENSIONS Dimensions Symbol Inch Dimensions Millimeters Min Notes Min Max BH .105 .175 2.67 4.45 BL .690 .770 17.53 19.56 BW .290 .325 7.37 8.26 BW 1 .280 .310 7.11 7.87 10 LH .025 .055 0.64 1.40 9, 11 LT .008 .012 0.203 0.305 LW .015 .021 0.381 0.533 LW 1 .038 .060 0.97 1.52 Symbol Max Inch Min 11 9 Millimeters Max Min Notes Max LS .300 TP 7.62 TP 5, 6 LS1 .100 TP 2.54 TP 5, 6 LL .125 .175 3.18 4.45 LL 1 .000 .030 0.00 0.76 15° 0° 15° α 0° R .010 S .030 N 11 7 0.25 .095 14 0.76 2.41 14 8 NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. Dimensions are in inches. Millimeters are given for general information only. Refer to applicable symbol list. Dimensioning and tolerancing in accordance with ASME Y14.5. Leads within +/- .005 inch (0.13 mm) radius of True Position (TP) at gauge plane with maximum material condition and unit installed. LS 1 and LS applies in zone LL 1 when unit installed. α applies to spread leads prior to installation. N is the number of terminal positions. Outlines on which the seating plane is coincident with the base plane (LH = 0), terminals lead standoffs are not required, and LH1 may equal LW along any part of the lead above the seating/base plane. 10. BW 1 does not include particles of package materials. 11. This dimension shall be measured with the device seated in the seating plane gauge JEDEC Outline No. GS-3. T4-LDS-0212, Rev. 2 (121516) ©2012 Microsemi Corporation Page 6 of 6