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2N6796U, 2N6798U, 2N6800U, 2N6802U
Qualified Levels:
JAN, JANTX, JANTXV
and JANS*
N-CHANNEL MOSFET
Compliant
Qualified per MIL-PRF-19500/557
DESCRIPTION
This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These
devices are also available in a TO-205AF (TO-39) package. Microsemi also offers numerous
other transistor products to meet higher and lower power ratings with various switching speed
requirements in both through-hole and surface-mount packages.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
Surface mount equivalent of JEDEC registered 2N6796, 2N6798, 2N6800 and 2N6802 number
series.
•
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/557.
*JANS qualification is available on 2N6798U only.
(See part nomenclature for all available options.)
•
RoHS compliant by design.
U-18 LCC
Package
Also available in:
APPLICATIONS / BENEFITS
•
•
TO-205AF (TO-39)
package
Compact surface mount design enables mounting in crowded areas.
Military and other high-reliability applications.
(Leaded Top Hat)
2N6796, 2N6798,
2N6800 & 2N6802
MAXIMUM RATINGS @ T A = +25 ºC unless otherwise stated
Parameters / Test Conditions
Operating & Storage Junction Temperature Range
Thermal Resistance Junction-to-Case (see Figure 1)
Total Power Dissipation
@ T A = +25 °C
(1)
@ T C = +25 °C
Drain-Source Voltage, dc
2N6796U
2N6798U
2N6800U
2N6802U
Gate-Source Voltage, dc
(2)
Drain Current, dc @ T C = +25 ºC
2N6796U
2N6798U
2N6800U
2N6802U
(2)
Drain Current, dc @ T C = +100 ºC
2N6796U
2N6798U
2N6800U
2N6802U
(3)
Off-State Current (Peak Total Value)
2N6796U
2N6798U
2N6800U
2N6802U
Source Current
2N6796U
2N6798U
2N6800U
2N6802U
Symbol
Value
T J & T stg
R ӨJC
-55 to +150
5.0
0.8
25
100
200
400
500
± 20
8.0
5.5
3.0
2.5
5.0
3.5
2.0
1.5
32
22
14
11
8.0
5.5
3.0
2.5
PT
V DS
V GS
I D1
I D2
I DM
IS
Unit
o
°C
C/W
W
V
V
A
A
A (pk)
MSC – Lawrence
6 Lake Street, Lawrence,
MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
A
Website:
www.microsemi.com
See notes on next page.
T4-LDS-0047-1, Rev. 1 (121483)
©2012 Microsemi Corporation
Page 1 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
Notes: 1. Derate linearly 0.2 W/°C for T C > +25 °C.
2. The following formula derives the maximum theoretical I D limit. I D is also limited by package and internal wires and may be limited due to
pin diameter.
3. I DM = 4 x I D1 as calculated in note 1.
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Ceramic LCC-18 with kovar gold plated lid.
TERMINALS: Gold plating over nickel.
MARKING: Manufacturer's ID, part number, date code, ESD symbol at Pin 1 location.
TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN
2N6796
U
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level (2N6798)
Blank = Commercial
Surface Mount package
JEDEC type number
(see Electrical Characteristics
table)
Symbol
di/dt
IF
RG
V DD
V DS
V GS
SYMBOLS & DEFINITIONS
Definition
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
Forward current
Gate drive impedance
Drain supply voltage
Drain source voltage, dc
Gate source voltage, dc
T4-LDS-0047-1, Rev. 1 (121483)
©2012 Microsemi Corporation
Page 2 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
2N6796U
2N6798U
2N6800U
2N6802U
V GS = 0 V, I D = 1.0 mA
Gate-Source Voltage (Threshold)
V DS ≥ V GS , I D = 0.25 mA
V DS ≥ V GS , I D = 0.25 mA, T J = +125°C
V DS ≥ V GS , I D = 0.25 mA, T J = -55°C
Gate Current
V GS = ± 20 V, V DS = 0 V
V GS = ± 20 V, V DS = 0 V, T J = +125°C
Symbol
Min.
V (BR)DSS
100
200
400
500
V GS(th)1
V GS(th)2
V GS(th)3
2.0
1.0
Max.
Unit
V
4.0
V
5.0
I GSS1
I GSS2
±100
±200
nA
Drain Current
V GS = 0 V, V DS
V GS = 0 V, V DS
V GS = 0 V, V DS
V GS = 0 V, V DS
= 80 V
= 160 V
= 320 V
= 400 V
2N6796U
2N6798U
2N6800U
2N6802U
I DSS1
25
µA
Drain Current
V GS = 0 V, V DS
V GS = 0 V, V DS
V GS = 0 V, V DS
V GS = 0 V, V DS
= 80 V, T J = +125 °C
= 160 V, T J = +125 °C
= 320 V, T J = +125 °C
= 400 V, T J = +125 °C
2N6796U
2N6798U
2N6800U
2N6802U
I DSS2
0.25
mA
Static Drain-Source On-State Resistance
V GS = 10 V, I D = 5.0 A pulsed
V GS = 10 V, I D = 3.5 A pulsed
V GS = 10 V, I D = 2.0 A pulsed
V GS = 10 V, I D = 1.5 A pulsed
2N6796U
2N6798U
2N6800U
2N6802U
Static Drain-Source On-State Resistance
V GS = 10 V, I D = 8.0 A pulsed
V GS = 10 V, I D = 5.5 A pulsed
V GS = 10 V, I D = 3.0 A pulsed
V GS = 10 V, I D = 2.5 A pulsed
2N6796U
2N6798U
2N6800U
2N6802U
Static Drain-Source On-State Resistance
T J = +125°C
V GS = 10 V, I D = 5.0 A pulsed
V GS = 10 V, I D = 3.5 A pulsed
V GS = 10 V, I D = 2.0 A pulsed
V GS = 10 V, I D = 1.5 A pulsed
2N6796U
2N6798U
2N6800U
2N6802U
Diode Forward Voltage
V GS = 0 V, I D = 8.0 A pulsed
V GS = 0 V, I D = 5.5 A pulsed
V GS = 0 V, I D = 3.0 A pulsed
V GS = 0 V, I D = 2.5 A pulsed
2N6796U
2N6798U
2N6800U
2N6802U
T4-LDS-0047-1, Rev. 1 (121483)
©2012 Microsemi Corporation
r DS(on)1
r DS(on)2
r DS(on)3
V SD
0.18
0.40
1.00
1.50
0.195
0.420
1.100
1.600
0.35
0.75
2.40
3.50
1.5
1.4
1.4
1.4
Ω
Ω
Ω
V
Page 3 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
Symbol
On-State Gate Charge
V GS = 10 V, I D = 8.0 A, V DS
V GS = 10 V, I D = 5.5 A, V DS
V GS = 10 V, I D = 3.0 A, V DS
V GS = 10 V, I D = 2.5 A, V DS
= 50 V
= 50 V
= 50 V
= 50 V
2N6796U
2N6798U
2N6800U
2N6802U
Gate to Source Charge
V GS = 10 V, I D = 8.0 A, V DS
V GS = 10 V, I D = 5.5 A, V DS
V GS = 10 V, I D = 3.0 A, V DS
V GS = 10 V, I D = 2.5 A, V DS
= 50 V
= 50 V
= 50 V
= 50 V
2N6796U
2N6798U
2N6800U
2N6802U
Gate to Drain Charge
V GS = 10 V, I D = 8.0 A, V DS
V GS = 10 V, I D = 5.5 A, V DS
V GS = 10 V, I D = 3.0 A, V DS
V GS = 10 V, I D = 2.5 A, V DS
= 50 V
= 50 V
= 50 V
= 50 V
2N6796U
2N6798U
2N6800U
2N6802U
Min.
Max.
Unit
Q g(on)
28.51
42.07
34.75
33.00
nC
Q gs
6.34
5.29
5.75
4.46
nC
Q gd
16.59
28.11
16.59
28.11
nC
Max.
Unit
t d(on)
30
ns
tr
75
50
35
30
ns
t d(off)
40
50
55
55
ns
tf
45
40
35
30
ns
t rr
300
500
700
900
ns
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Turn-on delay time
I D = 8.0 A, V GS = +10 V, R G
I D = 5.5 A, V GS = +10 V, R G
I D = 3.0 A, V GS = +10 V, R G
I D = 2.5 A, V GS = +10 V, R G
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 30 V
= 77 V
= 176 V
= 225 V
2N6796U
2N6798U
2N6800U
2N6802U
Rinse time
I D = 8.0 A, V GS
I D = 5.5 A, V GS
I D = 3.0 A, V GS
I D = 2.5 A, V GS
= +10 V, R G
= +10 V, R G
= +10 V, R G
= +10 V, R G
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 30 V
= 77 V
= 176 V
= 225 V
2N6796U
2N6798U
2N6800U
2N6802U
Turn-off delay time
I D = 8.0 A, V GS = +10 V, R G
I D = 5.5 A, V GS = +10 V, R G
I D = 3.0 A, V GS = +10 V, R G
I D = 2.5 A, V GS = +10 V, R G
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 30 V
= 77 V
= 176 V
= 225 V
2N6796U
2N6798U
2N6800U
2N6802U
Fall time
I D = 8.0 A, V GS
I D = 5.5 A, V GS
I D = 3.0 A, V GS
I D = 2.5 A, V GS
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 30 V
= 77 V
= 176 V
= 225 V
2N6796U
2N6798U
2N6800U
2N6802U
= +10 V, R G
= +10 V, R G
= +10 V, R G
= +10 V, R G
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F
di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F
di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F
di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F
T4-LDS-0047-1, Rev. 1 (121483)
= 8.0 A
= 5.5 A
= 3.0 A
= 2.5 A
2N6796U
2N6798U
2N6800U
2N6802U
©2012 Microsemi Corporation
Min.
Page 4 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
THERMAL RESPONSE (ZӨJC)
GRAPHS
t 1 , RECTANGLE PULSE DURATION (seconds)
FIGURE 1 – Normalized Transient Thermal Impedance
T4-LDS-0047-1, Rev. 1 (121483)
©2012 Microsemi Corporation
Page 5 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
GRAPHS (continued)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs
T C , CASE TEMPERATURE (°C)
For 2N6798U
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
T C , CASE TEMPERATURE (°C)
For 2N6796U
T C , CASE TEMPERATURE (°C)
For 2N6800U
T4-LDS-0047-1, Rev. 1 (121483)
©2012 Microsemi Corporation
T C , CASE TEMPERATURE (°C)
For 2N6802U
Page 6 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
GRAPHS (continued)
ID, DRAIN CURRENT (AMPERES)
FIGURE 3 – Maximum Safe Operating Area
ID, DRAIN CURRENT (AMPERES)
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6796U
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6798U
T4-LDS-0047-1, Rev. 1 (121483)
©2012 Microsemi Corporation
Page 7 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
GRAPHS (continued)
ID, DRAIN CURRENT (AMPERES)
FIGURE 3 – Maximum Safe Operating Area (continued)
ID, DRAIN-TO-SOURCE- CURRENT (AMPERES)
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6800U
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6802U
T4-LDS-0047-1, Rev. 1 (121483)
©2012 Microsemi Corporation
Page 8 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
PACKAGE DIMENSIONS
Ltr
Dimensions
Inches
Millimeters
Min
Max
Min
Max
BL
BW
CH
LL1
LL2
LS
LS1
.345
.360
.280
.295
.095
.115
.040
.055
.055
.065
.050 BSC
.025 BSC
8.77
9.14
7.12
7.49
2.42
2.92
1.02
1.39
1.40
1.65
1.27 BSC
0.635 BSC
LS2
LW
Q1
Q2
Q3
TL
TW
.008 BSC
.020
.030
.105 REF
.120 REF
.045
.055
.070
.080
.120
.130
0.203 BSC
0.51
0.76
2.67 REF
3.05 REF
1.14
1.40
1.78
2.03
3.05
3.30
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general
information only.
3. In accordance with ASME Y14.5M,
diameters are equivalent to Φx
symbology.
4. Ceramic package only.
T4-LDS-0047-1, Rev. 1 (121483)
©2012 Microsemi Corporation
Page 9 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
PAD LAYOUT
PAD ASSIGNMENTS
T4-LDS-0047-1, Rev. 1 (121483)
©2012 Microsemi Corporation
Page 10 of 10