2N6788U and 2N6790U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788U and 2N6790U devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Surface mount equivalent of JEDEC registered 2N6788 and 2N6790 numbers. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/555. • RoHS compliant by design. U-18 LCC Package APPLICATIONS / BENEFITS • • • High frequency operation. Lightweight, low-profile package. ESD rated to class 1A. Also available in: TO-205AF Package (leaded) 2N6788 & 2N6790 MAXIMUM RATINGS @ T C = +25 °C unless otherwise noted Parameters / Test Conditions Symbol Junction & Storage Temperature Thermal Resistance Junction-to-Case (see Figure 1) (1) Total Power Dissipation T J , T stg R ӨJC PT Drain to Gate Voltage Drain – Source Voltage Gate – Source Voltage (2) Drain Current, dc @ T C = +25 °C (see Figure ?) Drain Current, dc @ T C = +100 °C Off-State Current (3) Source Current 2N6788U 2N6790U 2N6788U 2N6790U V DG V DS V GS 2N6788U 2N6790U 2N6788U 2N6790U 2N6788U 2N6790U 2N6788U 2N6790U I D1 I D2 I DM IS Value Unit -55 to +150 8.93 0.8 100 200 100 200 ± 20 4.5 2.8 2.8 1.8 18 11 4.5 2.8 °C ºC/W W V V V A A A (pk) A Notes: 1. Derated linearly by 0.11 W/°C for T C > +25 °C. 2. The following formula derives the maximum theoretical I D limit. I D is also limited by package and internal wires and may be limited due to pin diameter. MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com 3. I DM = 4 x I D1 ; I D1 as calculated in note 2. T4-LDS-0164-1, Rev. 1 (121482) MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 ©2012 Microsemi Corporation Page 1 of 8 2N6788U and 2N6790U MECHANICAL and PACKAGING • • • • • CASE: Ceramic LCC-18 with kovar gold plated lid. TERMINALS: Gold plating over nickel. MARKING: Manufacturer's ID, part number, date code, ESD symbol at pin 1 location. TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6790 U Reliability Level JAN=JAN level JANTX=JANTX level JANTXV=JANTXV level Blank = Commercial Surface Mount package JEDEC type number SYMBOLS & DEFINITIONS Definition Symbol ID IF TC V DD V DS V GS Drain current. Forward current. Case temperature. Drain supply voltage. Drain to source voltage. Gate to source voltage. T4-LDS-0164-1, Rev. 1 (121482) ©2012 Microsemi Corporation Page 2 of 8 2N6788U and 2N6790U ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions Symbol Min. V (BR)DSS 100 200 Max. Unit OFF CHARACTERTICS 2N6788U 2N6790U Drain-Source Breakdown Voltage V GS = 0 V, I D = 1 mA Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = 0.25 mA V DS ≥ V GS , I D = 0.25 mA, T j = +125 °C V DS ≥ V GS , I D = 0.25 mA, T j = -55 °C V GS(th)1 V GS(th)2 V GS(th)3 Gate Current V GS = ±20 V, V DS = 0 V V GS = ±20 V, V DS = 0 V, T j = +125 °C I GSS1 I GSS2 Parameters / Test Conditions 2.0 1.0 V 4.0 V 5.0 ±100 ±200 nA Max. Unit I DSS1 25 µA Symbol Min. ON CHARACTERISTICS Drain Current V GS = 0V, V DS = 80 V V GS = 0V, V DS = 160 V 2N6788U 2N6790U Drain Current V GS = 0V, V DS = 80 V, T j = +125 °C V GS = 0V, V DS = 160 V, T j = +125 °C 2N6788U 2N6790U I DSS2 0.25 mA Static Drain-Source On-State Resistance V GS = 10 V, I D = 3.5 A pulsed V GS = 10 V, I D = 2.25 A pulsed 2N6788U 2N6790U r DS(on)1 0.30 0.80 Ω Static Drain-Source On-State Resistance V GS = 10 V, I D = 6.0 A pulsed V GS = 10 V, I D = 3.5 A pulsed 2N6788U 2N6790U r DS(on)2 0.35 0.85 Ω Static Drain-Source On-State Resistance T j = +125 °C: V GS = 10 V, I D = 3.5 A pulsed V GS = 10 V, I D = 2.25 A pulsed 2N6788U 2N6790U r DS(on)3 0.54 1.50 Ω Diode Forward Voltage V GS = 0 V, I D = 6.0 A pulsed V GS = 0 V, I D = 3.5 A pulsed 2N6788U 2N6790U V SD 1.8 1.5 V T4-LDS-0164-1, Rev. 1 (121482) ©2012 Microsemi Corporation Page 3 of 8 2N6788U and 2N6790U ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Max. Unit Q g(on) 18.0 14.3 nC 2N6788U 2N6790U Q gs 4.0 3.0 nC 2N6788U 2N6790U Q gd 9.0 9.0 nC Max. Unit Gate Charge: On-State Gate Charge V GS = 10 V, I D = 6.0 A, V DS = 50 V V GS = 10 V, I D = 3.5 A, V DS = 100 V 2N6788U 2N6790U Gate to Source Charge V GS = 10 V, I D = 6.0 A, V DS = 50 V V GS = 10 V, I D = 3.5 A, V DS = 100 V Gate to Drain Charge V GS = 10 V, I D = 6.0 A, V DS = 50 V V GS = 10 V, I D = 3.5 A, V DS = 100 V SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Min. Turn-on delay time I D = 6.0 A, V GS = 10 V, R G = 7.5 Ω, V DD = 35 V I D = 3.5 A, V GS = 10 V, R G = 7.5 Ω, V DD = 74 V 2N6788U 2N6790U t d(on) 40 ns Rinse time I D = 6.0 A, V GS = 10 V, R G = 7.5 Ω, V DD = 35 V I D = 3.5 A, V GS = 10 V, R G = 7.5 Ω, V DD = 74 V 2N6788U 2N6790U tr 70 50 ns Turn-off delay time I D = 6.0 A, V GS = 10 V, R G = 7.5 Ω, V DD = 35 V I D = 3.5 A, V GS = 10 V, R G = 7.5 Ω, V DD = 74 V 2N6788U 2N6790U t d(off) 40 50 ns Fall time I D = 6.0 A, V GS = 10 V, R G = 7.5 Ω, V DD = 35 V I D = 3.5 A, V GS = 10 V, R G = 7.5 Ω, V DD = 74 V 2N6788U 2N6790U tf 70 50 ns Diode Reverse Recovery Time di/dt = 100 A/µs, V DD ≤ 50 V, I F = 6.0 A di/dt = 100 A/µs, V DD ≤ 50 V, I F = 3.5 A 2N6788U 2N6790U t rr 240 400 ns T4-LDS-0164-1, Rev. 1 (121482) ©2012 Microsemi Corporation Page 4 of 8 2N6788U and 2N6790U THERMAL RESPONSE (ZӨJC) GRAPHS t 1 , RECTANGULAR PULSE DURATION (SECONDS) ID DRAIN CURRENT (AMPERES) ID DRAIN CURRENT (AMPERES) Figure 1 Thermal Impedance Curves T C CASE TEMPERATURE (°C) (2N6788U) T C CASE TEMPERATURE (°C) (2N6790U) Figure 2 Maximum Drain Current vs. Case Temperature Graph T4-LDS-0164-1, Rev. 1 (121482) ©2012 Microsemi Corporation Page 5 of 8 2N6788U and 2N6790U ID DRAIN CURRENT (AMPERES) GRAPHS (continued) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) ID DRAIN CURRENT (AMPERES) Maximum Safe Operating Area (2N6788U) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) Maximum Safe Operating Area (2N6790U) T4-LDS-0164-1, Rev. 1 (121482) ©2012 Microsemi Corporation Page 6 of 8 2N6788U and 2N6790U PACKAGE DIMENSIONS Ltr Dimensions Inches Millimeters Min Max Min Max BL BW CH LL1 LL2 LS .345 .360 .280 .295 .095 .115 .040 .055 .055 .065 .050 BSC 8.77 9.14 7.12 7.49 2.42 2.92 1.02 1.39 1.40 1.65 1.27 BSC LS1 LS2 LW Q1 Q2 Q3 TL TW .025 BSC .008 BSC .020 .030 .105 REF .120 REF .045 .055 .070 .080 .120 .130 0.635 BSC 0.203 BSC 0.51 0.76 2.67 REF 3.05 REF 1.14 1.40 1.78 2.03 3.05 3.30 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0164-1, Rev. 1 (121482) ©2012 Microsemi Corporation Page 7 of 8 2N6788U and 2N6790U PAD LAYOUT PAD ASSIGNMENTS T4-LDS-0164-1, Rev. 1 (121482) ©2012 Microsemi Corporation Page 8 of 8