LDS-0064-1

2N6782U, 2N6784U and 2N6786U
Qualified Levels:
JAN, JANTX, and
JANTXV
N-CHANNEL MOSFET
compliant
Qualified per MIL-PRF-19500/556
DESCRIPTION
This family of 2N6782U, 2N6784U and 2N6786U switching transistors are military qualified up
to the JANTXV level for high-reliability applications. These devices are also available in thru
hole TO-205AF package. Microsemi also offers numerous other transistor products to meet
higher and lower power ratings with various switching speed requirements in both throughhole and surface-mount packages.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
Surface mount equivalent of JEDEC registered 2N6782, 2N6784 and 2N6786 number series.
•
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/556.
(See part nomenclature for all available options.)
•
U-18 LCC
Package
RoHS compliant by design.
Also available in:
APPLICATIONS / BENEFITS
•
Lightweight surface mount design enables mounting in a crowded area.
•
Military and other high-reliability applications.
TO-205AF (TO-39)
package
(leaded)
2N6782 & 2N6786
MAXIMUM RATINGS @ T A = +25 ºC unless otherwise stated
Parameters / Test Conditions
Operating & Storage Junction Temperature Range
Thermal Resistance Junction-to-Case
Total Power Dissipation
@ T A = +25 °C
(1)
@ T C = +25 °C
Drain-Source Voltage, dc
2N6782U
2N6784U
2N6786U
Gate-Source Voltage, dc
(2)
Drain Current, dc @ T C = +25 ºC
2N6782U
2N6784U
2N6786U
(2)
Drain Current, dc @ T C = +100 ºC
2N6782U
2N6784U
2N6786U
(3)
Off-State Current (Peak Total Value)
2N6782U
2N6784U
2N6786U
Source Current
2N6782U
2N6784U
2N6786U
Symbol
Value
T J & T stg
R ӨJC
-55 to +150
8.33
0.8
15
100
200
400
± 20
3.50
2.25
1.25
2.25
1.50
0.80
14.0
9.0
5.5
3.50
2.25
1.25
PT
V DS
V GS
I D1
I D2
I DM
IS
See notes on next page.
T4-LDS-0064-1, Rev. 1 (121467)
©2012 Microsemi Corporation
Unit
o
°C
C/W
W
V
V
A
A
A (pk)
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Page 1 of 10
2N6782U, 2N6784U and 2N6786U
Notes: 1. Derate linearly 0.12 W/°C for T C > +25 °C.
2. The following formula derives the maximum theoretical I D limit. I D is also limited by package and internal wires and may be limited due to
pin diameter.
3. I DM = 4 x I D1 as calculated in note 1.
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Ceramic LCC-18 with kovar gold plated lid.
TERMINALS: Gold plating over nickel.
MARKING: Manufacturer's ID, part number, date code, ESD symbol at Pin 1 location.
TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN
2N6782
U
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
Surface Mount package
JEDEC type number
(see Electrical Characteristics
table)
Symbol
di/dt
IF
RG
V DD
V DS
V GS
SYMBOLS & DEFINITIONS
Definition
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
Forward current
Gate drive impedance
Drain supply voltage
Drain source voltage, dc
Gate source voltage, dc
T4-LDS-0064-1, Rev. 1 (121467)
©2012 Microsemi Corporation
Page 2 of 10
2N6782U, 2N6784U and 2N6786U
ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
2N6782U
2N6784U
2N6786U
V GS = 0 V, I D = 1.0 mA
Symbol
Min.
V (BR)DSS
100
200
400
Max.
Unit
V
Gate-Source Voltage (Threshold)
V DS ≥ V GS , I D = 0.25 mA
V DS ≥ V GS , I D = 0.25 mA, T J = +125 °C
V DS ≥ V GS , I D = 0.25 mA, T J = -55 °C
V GS(th)1
V GS(th)2
V GS(th)3
Gate Current
V GS = ± 20 V, V DS = 0 V
V GS = ± 20 V, V DS = 0 V, T J = +125 °C
I GSS1
I GSS2
±100
±200
nA
2.0
1.0
4.0
V
5.0
Drain Current
V GS = 0 V, V DS = 80 V
V GS = 0 V, V DS = 160 V
V GS = 0 V, V DS = 320 V
2N6782U
2N6784U
2N6786U
I DSS1
25
µA
Drain Current
V GS = 0 V, V DS = 80 V, T J = +125 °C
V GS = 0 V, V DS = 160 V, T J = +125 °C
V GS = 0 V, V DS = 320 V, T J = +125 °C
2N6782U
2N6784U
2N6786U
I DSS2
0.25
mA
Static Drain-Source On-State Resistance
V GS = 10 V, I D = 2.25 A pulsed
V GS = 10 V, I D = 1.50 A pulsed
V GS = 10 V, I D = 0.80 A pulsed
2N6782U
2N6784U
2N6786U
0.60
1.50
3.60
Ω
Static Drain-Source On-State Resistance
V GS = 10 V, I D = 3.50 A pulsed
V GS = 10 V, I D = 2.25 A pulsed
V GS = 10 V, I D = 1.25 A pulsed
2N6782U
2N6784U
2N6786U
0.61
1.60
3.70
Ω
Static Drain-Source On-State Resistance
T J = +125 °C
V GS = 10 V, I D = 2.25 A pulsed
V GS = 10 V, I D = 1.50 A pulsed
V GS = 10 V, I D = 0.80 A pulsed
2N6782U
2N6784U
2N6786U
1.08
2.81
7.92
Ω
Diode Forward Voltage
V GS = 0 V, I D = 3.50 A pulsed
V GS = 0 V, I D = 2.25 A pulsed
V GS = 0 V, I D = 1.25 A pulsed
2N6782U
2N6784U
2N6786U
T4-LDS-0064-1, Rev. 1 (121467)
©2012 Microsemi Corporation
r DS(on)1
r DS(on)2
r DS(on)3
V SD
1.5
1.5
1.4
V
Page 3 of 10
2N6782U, 2N6784U and 2N6786U
ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
Symbol
Min.
Max.
Unit
On-State Gate Charge
V GS = 10 V, I D = 3.50 A, V DS = 50 V
V GS = 10 V, I D = 2.25 A, V DS = 100 V
V GS = 10 V, I D = 1.25 A, V DS = 200 V
2N6782U
2N6784U
2N6786U
Q g(on)
8.1
8.6
12
nC
Gate to Source Charge
V GS = 10 V, I D = 3.50 A, V DS = 50 V
V GS = 10 V, I D = 2.25 A, V DS = 100 V
V GS = 10 V, I D = 1.25 A, V DS = 200 V
2N6782U
2N6784U
2N6786U
Q gs
1.7
1.5
1.8
nC
Gate to Drain Charge
V GS = 10 V, I D = 3.50 A, V DS = 50 V
V GS = 10 V, I D = 2.25 A, V DS = 100 V
V GS = 10 V, I D = 1.25 A, V DS = 200 V
2N6782U
2N6784U
2N6786U
Q gd
4.5
5.5
7.6
nC
Max.
Unit
t d(on)
15
ns
tr
25
20
20
ns
t d(off)
25
30
35
ns
tf
20
20
30
ns
t rr
180
350
540
ns
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Turn-on delay time
2N6782U
I D = 3.50 A, V GS = 10 V, R G = 7.5 Ω, V DD = 50 V
I D = 2.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 100 V 2N6784U
I D = 1.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 200 V 2N6786U
Rinse time
2N6782U
I D = 3.50 A, V GS = 10 V, R G = 7.5 Ω, V DD = 50 V
I D = 2.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 100 V 2N6784U
I D = 1.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 200 V 2N6786U
Turn-off delay time
2N6782U
I D = 3.50 A, V GS = 10 V, R G = 7.5 Ω, V DD = 50 V
I D = 2.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 100 V 2N6784U
I D = 1.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 200 V 2N6786U
Fall time
I D = 3.50 A, V GS = 10 V, R G = 7.5 Ω, V DD = 50 V
2N6782U
I D = 2.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 100 V 2N6784U
I D = 1.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 200 V 2N6786U
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F = 3.50 A
di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F = 2.25 A
di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F = 1.25 A
T4-LDS-0064-1, Rev. 1 (121467)
2N6782U
2N6784U
2N6786U
©2012 Microsemi Corporation
Min.
Page 4 of 10
2N6782U, 2N6784U and 2N6786U
Thermal Response (ZθJC)
GRAPHS
t 1 , Rectangle Pulse Duration (seconds)
FIGURE 1
Thermal Response Curves
T4-LDS-0064-1, Rev. 1 (121467)
©2012 Microsemi Corporation
Page 5 of 10
2N6782U, 2N6784U and 2N6786U
GRAPHS (continued)
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs
T C CASE TEMPERATURE (ºC)
For 2N6784U
ID, DRAIN CURRENT (AMPERES)
T C CASE TEMPERATURE (ºC)
For 2N6782U
T C CASE TEMPERATURE (ºC)
For 2N6786U
T4-LDS-0064-1, Rev. 1 (121467)
©2012 Microsemi Corporation
Page 6 of 10
2N6782U, 2N6784U and 2N6786U
GRAPHS (continued)
ID DRAIN CURRENT (AMPERES)
FIGURE 3 – Maximum Safe Operating Area
ID DRAIN CURRENT (AMPERES)
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2N6782U
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2N6784U
T4-LDS-0064-1, Rev. 1 (121467)
©2012 Microsemi Corporation
Page 7 of 10
2N6782U, 2N6784U and 2N6786U
GRAPHS (continued)
ID DRAIN CURRENT (AMPERES)
FIGURE 3 – Maximum Safe Operating Area
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2N6786U
T4-LDS-0064-1, Rev. 1 (121467)
©2012 Microsemi Corporation
Page 8 of 10
2N6782U, 2N6784U and 2N6786U
PACKAGE DIMENSIONS
Ltr
Dimensions
Inches
Millimeters
Min
Max
Min
Max
BL
BW
CH
LL1
LL2
LS
LS1
.345
.360
.280
.295
.095
.115
.040
.055
.055
.065
.050 BSC
.025 BSC
8.77
9.14
7.12
7.49
2.42
2.92
1.02
1.39
1.40
1.65
1.27 BSC
0.635 BSC
LS2
LW
Q1
Q2
Q3
TL
TW
.008 BSC
.020
.030
.105 REF
.120 REF
.045
.055
.070
.080
.120
.130
0.203 BSC
0.51
0.76
2.67 REF
3.05 REF
1.14
1.40
1.78
2.03
3.05
3.30
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general
information only.
3. In accordance with ASME Y14.5M,
diameters are equivalent to Φx
symbology.
4. Ceramic package only.
T4-LDS-0064-1, Rev. 1 (121467)
©2012 Microsemi Corporation
Page 9 of 10
2N6782U, 2N6784U and 2N6786U
PAD LAYOUT
PAD ASSIGNMENTS
T4-LDS-0064-1, Rev. 1 (121467)
©2012 Microsemi Corporation
Page 10 of 10