2N3019S Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. TO-39 (TO-205AD) Package FEATURES • JEDEC registered 2N3019 number. • • JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/391. Rad hard levels are also available per MIL-PRF-19500/391. (For RHA datasheet see JANSD2N3019S.) RoHS compliant by design. • Also available in: TO-5 package (long-leaded) 2N3019 TO-46 (TO-206AB) (leaded) 2N3057A APPLICATIONS / BENEFITS • • • • Short leaded TO-39 package. Lightweight. Low power. Military and other high-reliability applications. TO-18 (TO-206AA) (leaded) 2N3700 UB package (leaded) 2N3700UB o MAXIMUM RATINGS @ TA = +25 C unless otherwise noted Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current o (1) Total Power Dissipation: @ TA = +25 C o (2) @ TC = +25 C Notes: Symbol TJ and TSTG RӨJA RӨJC VCEO VCBO VEBO IC PD Value -65 to +200 195 30 80 140 7.0 1.0 0.8 5.0 1. Derate linearly 4.6 mW/°C for TA ≥ +25 °C. 2. Derate linearly 28.6 mW/°C for TC ≥ +25 °C. Unit o C o C/W o C/W V V V A W MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0185-4, Rev. 1 (121562) ©2012 Microsemi Corporation Page 1 of 6 2N3019S MECHANICAL and PACKAGING • • • • • • CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Gold plate, solder dip (Sn63/Pb37) available upon request. NOTE: Solder dip will eliminate RoHS compliance. MARKING: Part number, date code, manufacturer’s ID and serial number. POLARITY: NPN. WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3019 S Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level JANS = JANS level Blank = Commercial Symbol f IB IE TA TC VCB VCE VEB Short Leaded TO-39 JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Frequency Base current (dc) Emitter current (dc) Ambient temperature Case temperature Collector to base voltage (dc) Collector to emitter voltage (dc) Emitter to base voltage (dc) T4-LDS-0185-4, Rev. 1 (121562) ©2012 Microsemi Corporation Page 2 of 6 2N3019S ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 30 mA Collector-Base Cutoff Current VCB = 140 V Emitter-Base Cutoff Current VEB = 7 V Collector-Emitter Cutoff Current VCE = 90 V Emitter-Base Cutoff Current VEB = 5.0 V ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 150 mA, VCE = 10 V IC = 0.1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 500 mA, VCE = 10 V IC = 1.0 A, VCE = 10 V Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA Symbol Min. V(BR)CEO 80 Max. Unit V ICBO 10 µA IEBO1 10 µA ICES 10 ηA IEBO2 10 ηA hFE 100 50 90 50 15 300 300 300 VCE(sat) 0.2 0.5 V VBE(sat) 1.1 V Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz Symbol Min. Max. hfe 80 400 Magnitude of Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 50 mA, VCE = 10 V, f = 20 MHz |hfe| 5.0 20 Output Capacitance VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 12 pF Input Capacitance VEB = 0.5 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 60 pF T4-LDS-0185-4, Rev. 1 (121562) ©2012 Microsemi Corporation Page 3 of 6 2N3019S ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued) SAFE OPERATION AREA (See SOA graph below and MIL-STD-750, method 3053) DC Tests TC = 25 °C, 1 cycle, t = 10 ms Test 1 VCE = 10 V IC = 500 mA Test 2 VCE = 40 V IC = 125 mA Test 3 VCE = 80 V IC = 60 mA IC – COLLECTOR CURRENT - µA (1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%. VCE – COLLECTOR – EMITTER VOLTAGE – V Maximum Safe Operating Area T4-LDS-0185-4, Rev. 1 (121562) ©2012 Microsemi Corporation Page 4 of 6 2N3019S Maximum DC Operation Rating (W) GRAPHS o TA ( C) Ambient Maximum DC Operation Rating (W) FIGURE 1 Temperature – Power Derating (RӨJA) o TC ( C) Case at base FIGURE 2 Temperature – Power Derating (RӨJC) T4-LDS-0185-4, Rev. 1 (121562) ©2012 Microsemi Corporation Page 5 of 6 2N3019S PACKAGE DIMENSIONS Dimensions Inch Millimeters Symbol CD CH HD LC LD LL LU L1 L2 Q TL TW r α P Min Max .305 .335 .240 .260 .335 .370 .200 TP .016 .021 .500 .750 .016 .019 .050 .250 .050 .029 .045 .028 .034 .010 45° TP .100 - Min Max 7.75 8.51 6.10 6.60 8.51 9.40 5.08 TP 0.41 0.53 12.70 19.05 0.41 0.48 1.27 6.35 1.27 0.74 1.14 0.71 0.86 0.25 45° TP 2.54 - Notes 6 7, 8 7, 8 7, 8 7, 8 7, 8 5 4 3 10 6 NOTES: 1. 2. 3. 4. 5. 6. Dimensions are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. This device may be measured by direct methods. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. T4-LDS-0185-4, Rev. 1 (121562) ©2012 Microsemi Corporation Page 6 of 6