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ARF521
165V, 150W, 150MHz
RF POWER MOSFET
N-CHANNEL ENHANCEMENT MODE
The ARF521 is an RF power transistor designed for high voltage operation in
broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz.
• High Voltage Breakdown and Large SOA
• Specified 125 Volt, 81MHz Characteristics:
for Superior Ruggedness.
Output Power = 150 Watts.
Gain = 13dB (Class AB)
• Industry Standard Package
Efficiency = 50%
• Low Vth Thermal Coefficient
Maximum Ratings
Symbol
VDSS
ID
All Ratings: TC =25°C unless otherwise specified
Parameter
Drain-Source Voltage
ARF521
Unit
500
V
Continuous Drain Current @ TC = 25°C
10
A
VGS
Gate-Source Voltage
±30
V
PD
Total Device Dissipation @ TC = 25°C
250
W
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 175
Lead Temperature: 0.063” from Case for 10 Sec.
°C
300
Static Electrical Characteristics
Symbol
Parameter
Min
V(BR)DSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)
VDS(ON)
Drain-Source On-State Resistance
1
Typ
Max
500
(ID(ON) = 5A, VGS = 10V)
V
0.56
0.8
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C)
250
IGSS
Gate-Source Leakage Current (VDS = ±30V, VDS = 0V)
±100
gfs
Forward Transconductance (VDS = 15V, ID = 5A)
3
VGS(TH)
Gate Threshold Voltage (VDS = VGS, ID = 200mA)
2
IDSS
Unit
3.6
Ω
μA
nA
mhos
4
Volts
Max
Unit
Thermal Characteristics
Characteristic
Min
RθJC
Junction to Case Thermal Resistance
RθCS
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
Typ
0.60
0.1
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
°C/W
050-4930 Rev B 8-2007
Symbol
Dynamic Characteristics
Symbol
ARF521
Parameter
Test Conditions
Min
Typ
Max
CISS
Input Capacitance
VGS = 0V
780
900
Coss
Output Capacitance
VDS = 50V
125
150
Crss
Reverse Transfer Capacitance
f = 1MHz
7
10
td(ON)
Turn-on Delay Time
VGS = 15V
5.1
10
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
VDD = 0.5VDSS
4.1
8
ID =ID[Cont.] @ 25°C
12
18
RG = 1.6W
4.0
7
Typ
Max
Unit
pF
ns
Functional Characteristics
Symbol
Characteristic
GPS
Test Conditions
Common Source Amplifier Power Gain
h
Drain Efficiency
y
Electrical Ruggedness VSWR 5:1
Min
f = 81MHz
14
15
dB
Idq = 50mA VDD = 125V
50
55
%
POUT = 150W
No Degradation in Output Power
1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
25
3000
Class AB
VDD = 125V
CAPACITANCE (pf)
500
GAIN (dB)
15
10
0
25
50
75
100
125
50
Crss
10
1
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
20
TJ = +25°C
15
10
TJ = -55°C
5
TJ = +125°C
050-4930 Rev B 8-2007
10
100 200
OPERATION HERE
LIMITED BY R
(ON)
DS
TJ = -55°C
0
4
1
40
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
2
.1
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
30
0
Coss
100
150
FREQUENCY (MHz)
Figure 1, Typical Gain vs. Frequency
25
Ciss
1000
Pout = 150W
20
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
Unit
100us
10
5
1ms
1
10ms
100ms
DC
.5
.1
TC =+25°C
TJ =+175°C
SINGLE PULSE
1
5
10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
ARF521
30
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
1.10
1.05
1.00
0.95
0.90
12V
25
11V
10V
20
9V
15
8V
10
7V
5
0
-50 -25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
0.70
0.60
D = 0.9
0.50
0.7
0.40
0.5
0.30
0.3
0.20
0.10
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Transient Thermal Impedance RC Model
TJ ( C)
TC ( C)
0.256
0.213
0.131
Dissipated Power
(Watts)
0.00496F
0.0590F
ZEXT
ZEXT are the external thermal
impedances: Case to sink, sink to
ambient, etc. Set to zero when modeling
only the case to junction.
0.635F
Figure 7b, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
Zin (Ω)
ZOL (Ω)
2.0
24 - j 4.5
55 - j 4
13.5
8.3 - j 11.6
45 - j 22
27
2.5 - j 7.1
28.7 - j 28
40
1.0 - j 4.2
17.9 - j 26
65
.30 - j 1.1
9.0 - j 20.6
80
.25 + j 0.3
5.8 - j 17
100
.35 + j 1.6
4 - j 14.2
ZIN - Gate shunted with 25Ω
Idq = 50mA
ZOL - Conjugate of optimum load for 150 Watts output at Vdd=125V
050-4930 Rev B 8-2007
0
0.1
0.05
ARF521
ARF521 Test Circuit 81.36 MHz
L4
C12
R1
C9
Bias
0 - 12V
R2
C11
RF
Output
L2
L1
C13
C7
R3
C2
RF
Input
C10
L3
C8
C1 - Arco 406 Mica trimmer
C2 - 220pF Semco metal clad
C3 - Arco 464 Mica trimmer
C4 - 820pF ATC 700B
C5- 1000pF ATC 700B
C6 - Arco 463 Mica trimmer
C7-C10 10nF 500V chip
C11-C13 1nF NPO 500V
TL1 - .23" x 1.5" stripline
L1 -- 2t #18 .3" ID .2"L ~50nH
L2 -- 3t #16 AWG .31" ID .3"L ~65nH
L3 -- 10t #22 AWG .25 ID ~470nH
L4 -- VK200-4B ferrite choke ~3uH
R1-R3 -- 1k Ohm 1/4W Carbon
DUT = ARF521
+125V
C6
TL1
DUT
C1
C3
C5
C4
Gate Bias
Vdd Power
ARF521 Test Fixture
2-22-02 rf
M174 Package Outline
.5” SOE
A
U
M
DIM
1
M
Q
4
R
PIN 1 - SOURCE
PIN 2 - GATE
PIN 3 - SOURCE
PIN 4 - DRAIN
2
B
3
D
K
050-4930 Rev B 8-2007
H
E
C
Seating Plane
MILLIMETERS
MIN
MAX
MIN
MAX
A
0.096
0.990
24.39
25.14
B
0.465
0.510
11.82
12.95
C
0.229
0.275
5.82
6.98
D
0.216
0.235
5.49
5.96
E
0.084
0.110
2.14
2.79
H
0.144
0.178
3.66
4.52
J
0.003
0.007
0.08
0.17
K
0.435
M
J
INCHES
11.0
45° NOM
45° NOM
Q
0.115
0.130
2.93
3.30
R
0.246
0.255
6.25
6.47
U
0.720
0.730
18.29
18.54