ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • High Voltage Breakdown and Large SOA • Specified 125 Volt, 81MHz Characteristics: for Superior Ruggedness. Output Power = 150 Watts. Gain = 13dB (Class AB) • Industry Standard Package Efficiency = 50% • Low Vth Thermal Coefficient Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage ARF521 Unit 500 V Continuous Drain Current @ TC = 25°C 10 A VGS Gate-Source Voltage ±30 V PD Total Device Dissipation @ TC = 25°C 250 W TJ, TSTG TL Operating and Storage Junction Temperature Range -55 to 175 Lead Temperature: 0.063” from Case for 10 Sec. °C 300 Static Electrical Characteristics Symbol Parameter Min V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) VDS(ON) Drain-Source On-State Resistance 1 Typ Max 500 (ID(ON) = 5A, VGS = 10V) V 0.56 0.8 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C) 250 IGSS Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) ±100 gfs Forward Transconductance (VDS = 15V, ID = 5A) 3 VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 200mA) 2 IDSS Unit 3.6 Ω μA nA mhos 4 Volts Max Unit Thermal Characteristics Characteristic Min RθJC Junction to Case Thermal Resistance RθCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) Typ 0.60 0.1 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com °C/W 050-4930 Rev B 8-2007 Symbol Dynamic Characteristics Symbol ARF521 Parameter Test Conditions Min Typ Max CISS Input Capacitance VGS = 0V 780 900 Coss Output Capacitance VDS = 50V 125 150 Crss Reverse Transfer Capacitance f = 1MHz 7 10 td(ON) Turn-on Delay Time VGS = 15V 5.1 10 tr Rise Time td(off) Turn-off Delay Time tf Fall Time VDD = 0.5VDSS 4.1 8 ID =ID[Cont.] @ 25°C 12 18 RG = 1.6W 4.0 7 Typ Max Unit pF ns Functional Characteristics Symbol Characteristic GPS Test Conditions Common Source Amplifier Power Gain h Drain Efficiency y Electrical Ruggedness VSWR 5:1 Min f = 81MHz 14 15 dB Idq = 50mA VDD = 125V 50 55 % POUT = 150W No Degradation in Output Power 1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 25 3000 Class AB VDD = 125V CAPACITANCE (pf) 500 GAIN (dB) 15 10 0 25 50 75 100 125 50 Crss 10 1 ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 20 TJ = +25°C 15 10 TJ = -55°C 5 TJ = +125°C 050-4930 Rev B 8-2007 10 100 200 OPERATION HERE LIMITED BY R (ON) DS TJ = -55°C 0 4 1 40 VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 2 .1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 30 0 Coss 100 150 FREQUENCY (MHz) Figure 1, Typical Gain vs. Frequency 25 Ciss 1000 Pout = 150W 20 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics Unit 100us 10 5 1ms 1 10ms 100ms DC .5 .1 TC =+25°C TJ =+175°C SINGLE PULSE 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area ARF521 30 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.10 1.05 1.00 0.95 0.90 12V 25 11V 10V 20 9V 15 8V 10 7V 5 0 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature 0.70 0.60 D = 0.9 0.50 0.7 0.40 0.5 0.30 0.3 0.20 0.10 SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Transient Thermal Impedance RC Model TJ ( C) TC ( C) 0.256 0.213 0.131 Dissipated Power (Watts) 0.00496F 0.0590F ZEXT ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 0.635F Figure 7b, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) Zin (Ω) ZOL (Ω) 2.0 24 - j 4.5 55 - j 4 13.5 8.3 - j 11.6 45 - j 22 27 2.5 - j 7.1 28.7 - j 28 40 1.0 - j 4.2 17.9 - j 26 65 .30 - j 1.1 9.0 - j 20.6 80 .25 + j 0.3 5.8 - j 17 100 .35 + j 1.6 4 - j 14.2 ZIN - Gate shunted with 25Ω Idq = 50mA ZOL - Conjugate of optimum load for 150 Watts output at Vdd=125V 050-4930 Rev B 8-2007 0 0.1 0.05 ARF521 ARF521 Test Circuit 81.36 MHz L4 C12 R1 C9 Bias 0 - 12V R2 C11 RF Output L2 L1 C13 C7 R3 C2 RF Input C10 L3 C8 C1 - Arco 406 Mica trimmer C2 - 220pF Semco metal clad C3 - Arco 464 Mica trimmer C4 - 820pF ATC 700B C5- 1000pF ATC 700B C6 - Arco 463 Mica trimmer C7-C10 10nF 500V chip C11-C13 1nF NPO 500V TL1 - .23" x 1.5" stripline L1 -- 2t #18 .3" ID .2"L ~50nH L2 -- 3t #16 AWG .31" ID .3"L ~65nH L3 -- 10t #22 AWG .25 ID ~470nH L4 -- VK200-4B ferrite choke ~3uH R1-R3 -- 1k Ohm 1/4W Carbon DUT = ARF521 +125V C6 TL1 DUT C1 C3 C5 C4 Gate Bias Vdd Power ARF521 Test Fixture 2-22-02 rf M174 Package Outline .5” SOE A U M DIM 1 M Q 4 R PIN 1 - SOURCE PIN 2 - GATE PIN 3 - SOURCE PIN 4 - DRAIN 2 B 3 D K 050-4930 Rev B 8-2007 H E C Seating Plane MILLIMETERS MIN MAX MIN MAX A 0.096 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95 C 0.229 0.275 5.82 6.98 D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.52 J 0.003 0.007 0.08 0.17 K 0.435 M J INCHES 11.0 45° NOM 45° NOM Q 0.115 0.130 2.93 3.30 R 0.246 0.255 6.25 6.47 U 0.720 0.730 18.29 18.54