ARF466FL D ARF466FL G S RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of operation. • Specified 150 Volt, 40.68 MHz Characteristics: • Output Power = 300 Watts. • Gain = 16dB (Class AB) • Efficiency = 75% (Class C) • Low Cost Flangeless RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. Maximum Ratings Symbol All Ratings: TC =25°C unless otherwise specified Parameter Ratings VDSS Drain-Source Voltage 1000 VDGO Drain-Gate Voltage 1000 ID Continuous Drain Current @ TC = 25°C Unit V 13 A VGS Gate-Source Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 1153 W TJ, TSTG TL Operating and Storage Junction Temperature Range -55 to 175 Lead Temperature: 0.063” from Case for 10 Sec. °C 300 Static Electrical Characteristics Symbol Parameter Min BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) 1000 RDS(ON) Max Unit Drain-Source On-State Resistance 1 (VGS = 10V, ID = 6.5A) 1.0 ohms Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 250 IGSS Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) ±100 nA gfs Forward Transconductance (VDS = 25V, ID = 6.5A) 9 mhos 4 Volts Max Unit IDSS VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3.3 Typ V 7 2 μA Symbol RθJC RθJHS Parameter Min Typ Junction to Case 0.13 Junction to Sink (High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 0.27 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com °C/W 050-4928 Rev D 5-2010 Thermal Characteristics DYNAMIC CHARACTERISTICS Symbol ARF466FL Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN Test Conditions Characteristic Turn-off Delay Time Fall Time MAX UNIT 2000 VGS = 0V Rise Time TYP VDS = 150V f = 1 MHz 165 VGS = 15V 12 VDD = 500 V 10 ID = 13A @ 25°C 43 RG = 1.6W 10 pF 75 ns FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 40.68 MHz 14 16 dB 70 75 % VGS = 2.5V h Drain Efficiency y Electrical Ruggedness VSWR 10:1 VDD = 150V Pout = 300W MAX UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380μS, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the specifications and information contained herein. 10,000 30 Class C VDD = 150V 25 Pout = 150W CAPACITANCE (pf) 20 GAIN (dB) Ciss 15 10 1000 500 Coss 100 Crss 50 5 0 30 10 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 45 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 18 16 52 VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C 14 12 10 8 6 4 2 0 TJ = -55°C TJ = +25°C TJ = +125°C 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 050-4928 Rev D 5-2010 20 OPERATION HERE LIMITED BY R (ON) DS 100uS 10 5 1mS 1 10mS .5 .1 TC =+25°C TJ =+175°C SINGLE PULSE 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area 100mS TYPICAL PERFORMANCE CURVES 1.05 VGS=15 & 10V ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) ARF466FL 25 1.10 1.00 0.95 0.90 0.85 0.80 20 8V 15 6V 10 5.5V 5V 5 4.5V 4V 0.75 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 0.12 D = 0.9 0.10 0.7 0.08 0.5 0.06 0.3 0.04 0.1 0.02 0.05 10 SINGLE PULSE 10 -5 10-3 -4 10-2 10 -1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION TJ (°C) TC (°C) .043 Dissipated Power (Watts) .022 .058 .016 .018 1.91 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Figure 7b, TRANSIENT THERMAL IMPEDANCE MODEL Freq. (MHz) 2.0 13.5 27.1 40.7 65 ZIN (7) ZOL (7) 18 - j 11 1.3 - j 5 .40 - j 2.6 .20 - j 1.6 .11 + j 0.6 30 - j 1.7 25.7 - j 9.8 18 - j 13.3 12 - j 12.6 6.2 - j 8.9 Zin - Gate shunted with 257 IDQ = 100mA ZOL - Conjugate of optimum load for 300 W output at Vdd = 150V 5-2010 Table 1 - Typical Class AB Large Signal Input - Output Impedance 050-4928 Rev D 0 ZEXT Z JC, THERMAL IMPEDANCE (°C/W) θ 0.14 ARF466FL 40.68 MHz Test Circuit L4 R1 Bias + 0-12V - R3 R2 R4 L1 TL1 C3 C1 C1 -- 2200 pF ATC 700B C2-C5 -- Arco 465 Mica trimmer C6-C8 -- .1 mF 500V ceramic chip C9 -- 3x 2200 pF 500V chips COG D S ARF466FL .325 +/- .01 .125dia 4 pls .320 .330 .100 .100 .210 S G .570 1.500 .210 .300 5-2010 .005 .040 .200 050-4928 Rev D R5 ARF466FL C5 C4 R1- R3 -- 1k 7 0.5W R4- R5 -- 17 1W SMT TL1 -- 40 7 t-line 0.15 x 2" C1 is ~1.75" from R4-5. Thermal Considerations and Package Mounting: 1.250 S RF Output L2 L1 -- 3t #22 AWG .25"ID .25 "L ~55nH L2 -- 5t #16 AWG .312" ID .35"L ~176nH L3 -- 10t #24 AWG .25"ID ~.5uH L4 -- VK200-4B ferrite choke 3uH T3 Package Outline S L3 C9 RF Input C2 .125R 4 pls C8 C7 C6 + 150V - The rated power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 175°C. The thermal resistance between junctions and case mounting surface is 0.13 °C/W. When installed, an additional thermal impedance of 0.17°C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. Use the minimum amount necessary to coat the surface. The heatsink should incorporate a copper heat spreader to obtain best results. The package design clamps the ceramic base to the heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the base and the heat sink. Four 4-40 (M3) screws provide the required mounting force. Torque the mounting screws to 6 in-lb (0.68 N-m). HAZARDOUS MATERIAL WARNING The white ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.