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ARF466FL(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
D
ARF466FL
G
S
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
200V
300W
45MHz
The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and
industrial RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency
classes of operation.
• Specified 150 Volt, 40.68 MHz Characteristics:
•
Output Power = 300 Watts.
•
Gain = 16dB (Class AB)
•
Efficiency = 75% (Class C)
• Low Cost Flangeless RF Package.
• Low Vth thermal coefficient.
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
Maximum Ratings
Symbol
All Ratings: TC =25°C unless otherwise specified
Parameter
Ratings
VDSS
Drain-Source Voltage
1000
VDGO
Drain-Gate Voltage
1000
ID
Continuous Drain Current @ TC = 25°C
Unit
V
13
A
VGS
Gate-Source Voltage
±30
V
PD
Total Power Dissipation @ TC = 25°C
1153
W
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 175
Lead Temperature: 0.063” from Case for 10 Sec.
°C
300
Static Electrical Characteristics
Symbol
Parameter
Min
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)
1000
RDS(ON)
Max
Unit
Drain-Source On-State Resistance 1 (VGS = 10V, ID = 6.5A)
1.0
ohms
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
250
IGSS
Gate-Source Leakage Current (VDS = ±30V, VDS = 0V)
±100
nA
gfs
Forward Transconductance (VDS = 25V, ID = 6.5A)
9
mhos
4
Volts
Max
Unit
IDSS
VGS(TH)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3.3
Typ
V
7
2
μA
Symbol
RθJC
RθJHS
Parameter
Min
Typ
Junction to Case
0.13
Junction to Sink (High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
0.27
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
°C/W
050-4928 Rev D 5-2010
Thermal Characteristics
DYNAMIC CHARACTERISTICS
Symbol
ARF466FL(G)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
td(off)
tf
MIN
Test Conditions
Characteristic
Turn-off Delay Time
Fall Time
MAX
UNIT
2000
VGS = 0V
Rise Time
TYP
VDS = 150V
f = 1 MHz
165
VGS = 15V
12
VDD = 500 V
10
ID = 13A @ 25°C
43
RG = 1.6W
10
pF
75
ns
FUNCTIONAL CHARACTERISTICS
Symbol
GPS
Characteristic
Common Source Amplifier Power Gain
Test Conditions
MIN
TYP
f = 40.68 MHz
14
16
dB
70
75
%
VGS = 2.5V
h
Drain Efficiency
y
Electrical Ruggedness VSWR 10:1
VDD = 150V
Pout = 300W
MAX
UNIT
No Degradation in Output Power
1 Pulse Test: Pulse width < 380μS, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
10,000
30
Class C
VDD = 150V
25
Pout = 150W
CAPACITANCE (pf)
20
GAIN (dB)
Ciss
15
10
1000
500
Coss
100
Crss
50
5
0
30
10
.1
1
10
100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
45
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
52
18
16
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
14
12
10
8
6
4
2
0
TJ = -55°C
TJ = +25°C
TJ = +125°C
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
050-4928 Rev D 5-2010
20
OPERATION HERE
LIMITED BY R
(ON)
DS
100uS
10
5
1mS
1
10mS
.5
.1
TC =+25°C
TJ =+175°C
SINGLE PULSE
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
100mS
TYPICAL PERFORMANCE CURVES
1.05
VGS=15 & 10V
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
ARF466FL(G)
25
1.10
1.00
0.95
0.90
0.85
0.80
20
8V
15
6V
10
5.5V
5V
5
4.5V
4V
0.75
-50 -25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0.12
D = 0.9
0.10
0.7
0.08
0.5
0.06
0.3
0.04
0.1
0.02
0.05
10
SINGLE PULSE
10
-5
10-3
-4
10-2
10 -1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
TJ (°C)
TC (°C)
.043
Dissipated Power
(Watts)
.022
.058
.016
.018
1.91
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 7b, TRANSIENT THERMAL IMPEDANCE MODEL
Freq. (MHz)
2.0
13.5
27.1
40.7
65
ZIN (7)
ZOL (7)
18 - j 11
1.3 - j 5
.40 - j 2.6
.20 - j 1.6
.11 + j 0.6
30 - j 1.7
25.7 - j 9.8
18 - j 13.3
12 - j 12.6
6.2 - j 8.9
Zin - Gate shunted with 257
IDQ = 100mA
ZOL - Conjugate of optimum load for 300 W output at Vdd = 150V
5-2010
Table 1 - Typical Class AB Large Signal Input - Output Impedance
050-4928 Rev D
0
ZEXT
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.14
ARF466FL(G)
40.68 MHz Test Circuit
L4
R1
Bias +
0-12V -
R2
R4
L1
TL1
C3
C1
C1 -- 2200 pF ATC 700B
C2-C5 -- Arco 465 Mica trimmer
C6-C8 -- .1 mF 500V ceramic chip
C9 -- 3x 2200 pF 500V chips COG
D
S
ARF466FL
.325 +/- .01
.125dia
4 pls
.320
.330
.100
.100
.210
S
G
.570
1.500
.210
.300
5-2010
.005
.040
.200
050-4928 Rev D
R5
ARF466FL
C5
C4
R1- R3 -- 1k 7 0.5W
R4- R5 -- 17 1W SMT
TL1 -- 40 7 t-line 0.15 x 2"
C1 is ~1.75" from R4-5.
Thermal Considerations and Package Mounting:
1.250
S
RF
Output
L2
L1 -- 3t #22 AWG .25"ID .25 "L ~55nH
L2 -- 5t #16 AWG .312" ID .35"L ~176nH
L3 -- 10t #24 AWG .25"ID ~.5uH
L4 -- VK200-4B ferrite choke 3uH
T3 Package Outline
S
L3
C9
RF
Input C2
.125R
4 pls
C8
C7
R3
C6
+
150V
-
The rated power dissipation is only available when the
package mounting surface is at 25°C and the junction
temperature is 175°C. The thermal resistance between
junctions and case mounting surface is 0.13 °C/W. When
installed, an additional thermal impedance of 0.17°C/W
between the package base and the mounting surface is
typical. Insure that the mounting surface is smooth and flat.
Thermal joint compound must be used to reduce the
effects of small surface irregularities. Use the minimum
amount necessary to coat the surface. The heatsink should
incorporate a copper heat spreader to obtain best results.
The package design clamps the ceramic base to the
heatsink. A clamped joint maintains the required mounting
pressure while allowing for thermal expansion of both the
base and the heat sink. Four 4-40 (M3) screws provide
the required mounting force. Torque the mounting screws
to T = 2.5 - 3.5 in-lb (0.28 - 0.40 N-m).
HAZARDOUS MATERIAL WARNING
The white ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during
handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste.