SPANSION S75WS256NEFBAWLH3

S75WS-N Based MCPs
Stacked Multi-Chip Product (MCP)
256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only
Simultaneous Read/Write, Burst-mode Flash Memory
with 128 Mb (8M x 16-Bit) RAM Type 4 and
512 Mb (32M x 16-bit) Data Flash or 1 Gb ORNAND Flash
Data Sheet
PRELIMINARY
Notice to Readers: This document indicates states the current technical
specifications regarding the Spansion product(s) described herein. The
Preliminary status of this document indicates that a product qualification has
been completed, and that initial production has begun. Due to the phases of
the manufacturing process that require maintaining efficiency and quality, this
document may be revised by subsequent versions or modifications due to
changes in technical specifications.
Publication Number S75WS-N_02
Revision A
Amendment 2
Issue Date October 6, 2005
P r e l i m i n a r y
Notice On Data Sheet Designations
Spansion LLC issues data sheets with Advance Information or Preliminary designations to advise
readers of product information or intended specifications throughout the product life cycle, including development, qualification, initial production, and full production. In all cases, however,
readers are encouraged to verify that they have the latest information before finalizing their design. The following descriptions of Spansion data sheet designations are presented here to highlight their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion LLC is developing one or more specific products, but has not committed any design to production. Information presented in a document with this designation is likely to change, and in some cases, development on the product
may discontinue. Spansion LLC therefore places the following conditions upon Advance Information content:
“This document contains information on one or more products under development at Spansion LLC. The
information is intended to help you evaluate this product. Do not design in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed
product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a
commitment to production has taken place. This designation covers several aspects of the product life cycle, including product qualification, initial production, and the subsequent phases in the
manufacturing process that occur before full production is achieved. Changes to the technical
specifications presented in a Preliminary document should be expected while keeping these aspects of production under consideration. Spansion places the following conditions upon Preliminary content:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. The Preliminary status of this document indicates that product qualification has been completed,
and that initial production has begun. Due to the phases of the manufacturing process that require
maintaining efficiency and quality, this document may be revised by subsequent versions or modifications due to changes in technical specifications.”
Combination
Some data sheets will contain a combination of products with different designations (Advance Information, Preliminary, or Full Production). This type of document will distinguish these products
and their designations wherever necessary, typically on the first page, the ordering information
page, and pages with DC Characteristics table and AC Erase and Program table (in the table
notes). The disclaimer on the first page refers the reader to the notice on this page.
Full Production (No Designation on Document)
When a product has been in production for a period of time such that no changes or only nominal
changes are expected, the Preliminary designation is removed from the data sheet. Nominal
changes may include those affecting the number of ordering part numbers available, such as the
addition or deletion of a speed option, temperature range, package type, or VIO range. Changes
may also include those needed to clarify a description or to correct a typographical error or incorrect specification. Spansion LLC applies the following conditions to documents in this category:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. Spansion LLC deems the products to have been in sufficient production volume such that subsequent versions of this document are not expected to change. However, typographical or specification
corrections, or modifications to the valid combinations offered may occur.”
Questions regarding these document designations may be directed to your local AMD or Fujitsu
sales office.
ii
S75WS-N Based MCPs
S75WS-N_02_A2 October 6, 2005
S75WS-N Based MCPs
Stacked Multi-Chip Product (MCP)
256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only
Simultaneous Read/Write, Burst-mode Flash Memory with
128 Mb (8M x 16-Bit) RAM Type 4 and
512 Mb (32M x 16-bit) Data Flash or 1Gb ORNAND Flash
Data Sheet
PRELIMINARY
General Description
The S75WS-N Series is a product line of stacked Multi-Chip Product (MCP) packages and consists
of the following items:
„ One or more S29WS-N code Flash
„ RAM Type 4
„ One or more S29WS-N data Flash, or one or more S30MS-P ORNAND Flash
The products covered by this document are listed in the table below:
Device
Code Flash
Density
RAM
Density
256 Mb
128 Mb
S75WS256NDF
„
„
S75WS256NEG
„
256 Mb
NOR Data Flash
Density
ORNAND Data Flash
Density
512 Mb
1024 Mb
„
„
„
Distinctive Characteristics
MCP Features
„ Power supply voltage of 1.7 V to 1.95 V
„ High Performance
— 54 MHz, 66 Mhz, 80 MHz
„ Packages
— 9 x 12 mm 84 ball FBGA
— 11 x 13 mm 115 ball FBGA
„ Operating Temperature
— Wireless, –25°C to +85°C
Publication Number S75WS-N_02
Revision A
Amendment 2
Issue Date October 6, 2005
P r e l i m i n a r y
Contents
S75WS-N Based MCPs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i
1
2
3
4
5
Tables
6
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 NOR Flash + pSRAM + ORNAND Flash MCPs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ordering Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Input/Output Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
MCP Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Connection Diagrams/Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
5.1 Special Handling Instructions for FBGA Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5.2 Connection Diagram – NOR Flash & 1.8 V RAM Type 4 Based Pinout, 9 x 12 mm . . . . . . . . . . . . . . . . . . . . . . . 8
5.3 Connection Diagram – ORNAND-Based Pinout, 11 x 13 mm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.4 Physical Dimensions – FEA084 – Fine Pitch Ball Grid Array 9 x 12 mm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
5.5 Physical Dimensions – FND115 – Fine Pitch Ball Grid Array 11 x 13 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
MCP Revisions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 2.1
MCP Configurations and Valid Combinations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Table 2.2
ORNAND Configurations and Valid Combinations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Table 3.1
NOR Flash and RAM Input/Output Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 3.2
ORNAND Flash Input/Output Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figures
Figure 4.1
Figure 4.2
2
MCP Block Diagram 1 ......................................................................................................................... 6
ORNAND Block Diagram ...................................................................................................................... 7
S75WS-N Based MCPs
S75WS-N_02_A2 October 6, 2005
P r e l i m i n a r y
1
Product Selector Guide
Device
MCP Configuration
Model
Numbers
Code
Flash
RAM
(Mb)
Code
RAM
Data Storage Density Density
(Mb)
(Mb)
Flash
DYB
pSRAM
Data Flash Flash pSRAM
Power-Up
(RAM Type 4)
Density
Speed Speed
State
Supplier
(Mb)
(MHz) (MHz)
(See Note)
LK
NK
S75WS256NDF
LJ
NJ
WS256N
128
2xWS256N
256
128
512
LH
NH
54
54
66
66
80
80
Package
84 ball
FBGA
(mm)
0
1
0
1
4
9x12
0
1
b
Note: 0 (Protected), 1 (Unprotected [Default State])
1.1
NOR Flash + pSRAM + ORNAND Flash MCPs
Device
S75WS256NEG
Model
Numbers
NOR Flash
Density
ORNAND Flash
Density
pSRAM
Density
MCP Speed
UK
54 MHz
UJ
66 MHz
UH
SK
512 Mb
1024 Mb
256 Mb
80 MHz
54 MHz
SJ
66 MHz
SH
80 MHz
October 6, 2005 S75WS-N_02_A2
S75WS-N Based MCPs
Supplier
ORNAND Bus
Width
Package
x16
1.8 V
pSRAM
Type 4
11 x 13 x 1.4 mm
x8
3
P r e l i m i n a r y
2
Ordering Information
The ordering part number is formed by a valid combination of the following:
S75WS
256
N
D
F
BA
W
L
K 0
Packing
0
=
2
=
3
=
RAM
K
J
H
Type
Tray
7” Tape and Reel
13” Tape and Reel
Supplier; Speed Combination
= RAM Type 4, 54 MHz
= RAM Type 4, 66 MHz
= RAM Type 4, 80 MHz
Package Dimensions and Ball Count; DYB Power Up;
Flash Device Family (Data Storage)
L
= 1.4 mm, 9 x 12, 84 ball; 0, WS as Data Flash
N
= 1.4 mm, 9 x 12, 84 ball; 1, WS as Data Flash
U
= 1.4mm, 11x13, 115-ball, x16 ORNAND Data Flash
S
= 1.4mm, 11x13, 115-ball, x8 ORNAND Data Flash
Temperature Range
W
= Wireless (–25°C to +85°C)
Package Type And Material
BA
= Very Thin Fine-Pitch Ball Grid Array (BGA),
Lead (Pb)-free Compliant Package
BF
= Very Thin Fine-Pitch Ball Grid Array (BGA),
Lead (Pb)-free Package
Data Flash Density
F
= 512 Mb
G
= 1024 Mb
RAM Density
D
= 128 Mb
E
= 256 Mb
Process Technology
N
= 110 nm, Mirror Bit Technology
Code Flash Density
256
= 256 Mb
Device Family
S75WS = Multi-chip Product (MCP)
1.8-volt Burst Mode Flash Memory, RAM, and data flash
Table 2.1
MCP Configurations and Valid Combinations
S75WS256N
Table 2.2
S75WS256N
D
F
Valid Combination
BA, BF
W
L, N
K, H
ORNAND Configurations and Valid Combinations
E
G
Valid Combination
BA, BF
W
U, S
K, J, H
Package Marking Note:
The BGA package marking omits the leading S75 and packing type designator from the ordering part number.
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult
your local sales office to confirm availability of specific valid combinations and to check on newly
released combinations.
4
S75WS-N Based MCPs
S75WS-N_02_A2 October 6, 2005
P r e l i m i n a r y
3
Input/Output Descriptions
Table 3.1 identifies the input and output package connections provided on the device.
Table 3.1
NOR Flash and RAM Input/Output Descriptions
Symbol
Description
Amax – A0
Address Inputs
DQ15 - DQ0
Data Inputs/Outputs
OE#
Output Enable input
WE#
Write Enable input
VSS
Ground
(Common)
NC
No Connect; not connected internally.
RDY
Ready output. Indicates the status of the Burst read.
(Flash)
CLK
Clock input. In burst mode, after the initial word is output, subsequent
active edges of CLK increment the internal address counter. Should be at
VIL or VIH while in asynchronous mode.
(Common)
AVD#
Address Valid input.
Indicates to device that the valid address is present on the address inputs.
F-RST#
Hardware reset input.
F-WP#
Hardware write protect input.
At VIL, disables program and erase functions in the four outermost sectors.
Should be at VIH for all other conditions.
F-ACC
Accelerated input.
At VHH, accelerates programming; automatically places device in unlock
bypass mode. At VIL, disables all program and erase functions. Should be
at VIH for all other conditions.
R-CE#
Chip-enable input for pSRAM
F1-CE#
Chip-enable input for Code Flash.
F2-CE#
Chip-enable input for Data Flash 1.
F2-CE#
Chip-enable input for Data Flash 2.
R-MRS#
Control Register Enable.
F-VCC
Flash 1.8 Volt-only single power supply.
R-VCC
pSRAM Power Supply.
R-UB#
Upper Byte Control.
R-LB#
Lower Byte Control .
(Flash)
Asynchronous relative to
CLK for Burst Mode.
(pSRAM – RAM Type 4 only)
(pSRAM)
Table 3.2 identifies the ORNAND input and output connections provided on the device.
Table 3.2
ORNAND Flash Input/Output Descriptions
Symbol
Description
N-PRE
ORNAND Power-On Read Enable. Tie to VSS on customer board if not used.
N-ALE
ORNAND Address Latch Enable
N-CLE
ORNAND Command Latch Enable
N-CE#
ORNAND Chip-enable
N-WP#
ORNAND Write-protect
N-WE#
ORNAND Write-enable
N-RE#
ORNAND Read-enable
N-RY/BY#
ORNAND Ready-Busy—this is shared with NOR RDY
N-I/O0-N-I/O15
ORNAND I/O signals (I/O0-I/O7 for x8 bus width)
N-VCC
ORNAND Power supply
October 6, 2005 S75WS-N_02_A2
S75WS-N Based MCPs
5
P r e l i m i n a r y
4
MCP Block Diagram
A0-A22
A0-A22
A23
A23
RDY
RDY
CLK
AVD#
F1-CE#
OE#
F-RST#
F-ACC
F1-WP#
F-WE#
CLK
AVD#
CE#
OE#
RESET#
ACC
WP#
WE#
DQ0-DQ15
WS256N
Flash
Memory
DQ0-DQ15
VSS
VSS
VCC
VCCQ
F-VCC
F-VCCQ
A0-A22
DQ0-DQ15
WAIT#
CLK
AVD#
CE#
OE#
R-CE#
R-LB#
R-UB#
128Mb
Memory
LB#
UB#
WE#
MRS#
R-MRS#
VSS
VCC
VCCQ
R-VCC
R-VCCQ
A0-A22
A23
DQ0-DQ15
RDY
CLK
AVD#
CE#
OE#
RESET#
ACC
WP#
WE#
F2-CE#
FD-WP#
WS256N
Flash
Memory
VSS
VCC
VCCQ
A0-A22
A23
DQ0-DQ15
RDY
F3-CE#
v
CLK
AVD#
CE#
OE#
RESET#
ACC
WP#
WE#
WS256N
Flash
Memory
VSS
VCC
VCCQ
Notes:
1.
2.
MRS is only present in RAM Type 4.
CE#f1, CE#f2, and CE#f3 are the chip enable pins for the first, second and third Flash devices, respectively.
Figure 4.1
6
MCP Block Diagram 1
S75WS-N Based MCPs
S75WS-N_02_A2 October 6, 2005
P r e l i m i n a r y
x16 MS01GP-based MCP
A0-A22
A0-A22
A23
A23
RDY
RDY
CLK
AVD#
F-CE#
OE#
F-RST#
F-ACC
F1-WP#
WE#
CLK
AVD#
CE#
OE#
RESET#
ACC
WP#
WE#
DQ0-DQ15
WS256N
Flash
Memory
VSS
VCC
VCCQ
DQ0-DQ15
VSS
F-VCC
A0-A22
DQ0-DQ15
WAIT#
R1-CE#
R-LB#
R-UB#
R-MRS#
CLK
AVD#
CE#
OE#
LB#
UB#
WE#
MRS#
128 Mb
RAM
Memory
VSS
VCC
VCCQ
R-VCC
A0-A22
DQ0-DQ15
WAIT#
R2-CE#
CLK
AVD#
CE#
OE#
LB#
UB#
WE#
MRS#
I/O0-I/O15
128 Mb
RAM
Memory
VSS
VCC
VCCQ
I/O0-I/O15
N-RY/BY#
RB#
N-CLE
N-CE#
N-ALE
CLE
CE#
ALE
N-RE#
N-WP#
N-WE#
RE#
WP#
WE#
MS01GP
x16 ORNAND
Memory
VSS
PRE
N-VSS
N-PRE
VCC
N-VCC
Figure 4.2 ORNAND Block Diagram
October 6, 2005 S75WS-N_02_A2
S75WS-N Based MCPs
7
P r e l i m i n a r y
5
Connection Diagrams/Physical Dimensions
This section contains the I/O designations and package specifications for the S75WS.
5.1
Special Handling Instructions for FBGA Package
Special handling is required for Flash Memory products in FBGA packages.
Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised if the package body is exposed to
temperatures above 150°C for prolonged periods of time.
5.2
Connection Diagram – NOR Flash & 1.8 V RAM Type 4 Based Pinout, 9 x 12 mm
Legend:
A1
A10
DNU
DNU
B2
B3
B4
B5
B6
B7
B8
B9
ADV#
VSS
CLK
RFU
F-VCC
RFU
RFU
RFU
C2
C3
C4
C5
C6
C7
C8
C9
F1-WP#
A7
R-LB#
F-ACC
WE#
A8
A11
F2-CE#
D2
D3
D4
D5
D6
D7
D8
D9
X
A3
A6
R-UB#
F-RST#
RFU
A19
A12
A15
Flash 2
Data Only
E2
E3
E4
E5
E6
E7
E8
E9
A2
A5
A18
RDY
A20
A9
A13
A21
F2
F3
F4
F5
F6
F7
F8
F9
A1
A4
A17
RFU
A23
A10
A14
A22
X
G2
G3
G4
G5
G6
G7
G8
G9
Flash 1
Code Only
A0
VSS
DQ1
RFU
RFU
DQ6
RFU
A16
X
H2
H3
H4
H5
H6
H7
H8
H9
RAM Only
OE#
DQ9
DQ3
DQ4
DQ13
DQ15
J2
J3
J4
J5
J6
J7
J8
J9
All Shared
R-CE1#
DQ0
DQ10
F-VCC
R-VCC
DQ12
DQ7
VSS
X
K2
K3
K4
K5
K6
K7
K8
K9
All Flash
Shared Only
RFU
DQ8
DQ2
DQ11
RFU
DQ5
DQ14
L2
L3
L4
L5
L6
L7
L8
L9
RFU
RFU
VSS
F-VCC
F3-CE#
RFU
F-VCCQ
DNU
F1-CE#
8
X
RFU
(Reserved for
Future Use)
X
Data Flash
Shared Only
X
Flash 3
Data Only
R-MRS#
FD-WP#
X
Do Not Use
M1
M10
DNU
DNU
S75WS-N Based MCPs
X
S75WS-N_02_A2 October 6, 2005
P r e l i m i n a r y
5.3
Connection Diagram – ORNAND-Based Pinout, 11 x 13 mm
Legend
A1
A2
A9
A10
DNU
DNU
DNU
DNU
B1
B2
B9
B10
DNU
DNU
DNU
DNU
Reserved for
Future Use
Do Not Use
C2
C3
C4
C5
C6
C7
C8
C9
C10
AVD#
VSS
CLK
RFU
IO15
IO14
IO13
IO12
DNU
D2
D3
D4
D5
D6
D7
D8
D9
D10
A7
R-LB#
F-ACC
WE#
A8
A11
IO11
IO10
E2
E3
E4
E5
E6
E7
E8
E9
E10
A3
A6
R-UB#
F-RST#
R2-CE#
A19
A12
A15
IO9
F2
F3
F4
F5
F6
F7
F8
F9
F10
N-CE#
A2
A5
A18
RDY
A20
A9
A13
A21
IO8
G1
G2
G3
G4
G5
G6
G7
G8
G9
G10
N-VCC
A1
A4
A17
RFU
A23
A10
A14
A22
N-VCC
H1
H2
H3
H4
H5
H6
H7
H8
H9
H10
N-VSS
A0
VSS
DQ1
RFU
RFU
DQ6
RFU
A16
N-VSS
J1
J2
J3
J4
J5
J6
J7
J8
J9
J10
N-CLE#
F1-CE#
OE#
DQ9
DQ3
DQ4
DQ13
DQ15
R-MRS
IO7
K1
K2
K3
K4
K5
K6
K7
K8
K9
K10
N-ALE#
R1-CE#
DQ0
DQ10
F-VCC
R-VCC
DQ12
DQ7
VSS
IO6
L1
L2
L3
L4
L5
L6
L7
L8
L9
L10
N-WE#
N-WP#
DQ8
DQ2
DQ11
RFU
DQ5
DQ14
IO4
IO5
M1
M2
M3
M4
M5
M6
M7
M8
M9
M10
DNU
RFU
RFU
VSS
F-VCC
IO0
IO1
IO2
IO3
PRE
N1
N2
N9
N10
DNU
DNU
DNU
DNU
P1
P2
P9
DNU
DNU
DNU
D1
N-RY/BY# F-WP#
E1
N-RE#
F1
NOR Flash Only
NAND Flash Only
PSRAM 1 Only
PSRAM 2 Only
PSRAM Shared Only
NOR Flash &
PSRAM Shared
P10
DNU
Note: Bus 1: NOR Flash + pSRAM, Bus 2: ORNAND Flash
October 6, 2005 S75WS-N_02_A2
S75WS-N Based MCPs
9
P r e l i m i n a r y
5.4
Physical Dimensions – FEA084 – Fine Pitch Ball Grid Array 9 x 12 mm
D1
A
D
eD
0.15 C
(2X)
10
9
SE
8
7
7
6
E
E1
5
4
eE
3
2
1
M L K J
INDEX MARK
PIN A1
CORNER
B
10
TOP VIEW
H G F
E D C
B A
PIN A1
CORNER
7
SD
0.15 C
(2X)
BOTTOM VIEW
0.20 C
A A2
A1
C
0.08 C
SIDE VIEW
6
b
84X
0.15
0.08
M C A B
M C
NOTES:
PACKAGE
FEA 084
JEDEC
N/A
DxE
12.00 mm x 9.00 mm
PACKAGE
SYMBOL
MIN
NOM
MAX
A
---
---
1.40
A1
0.10
---
---
A2
1.11
---
1.26
D
12.00 BSC.
NOTE
PROFILE
9.00 BSC.
BODY SIZE
MATRIX FOOTPRINT
E1
7.20 BSC.
MATRIX FOOTPRINT
MD
12
MATRIX SIZE D DIRECTION
ME
10
MATRIX SIZE E DIRECTION
84
0.40
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"
DIRECTION.
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE
"E" DIRECTION.
BODY SIZE
8.80 BSC.
0.35
2.
BODY THICKNESS
E
n
DIMENSIONING AND TOLERANCING METHODS PER
ASME Y14.5M-1994.
BALL HEIGHT
D1
Øb
1.
n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS
FOR MATRIX SIZE MD X ME.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A
AND B AND DEFINE THE POSITION OF THE CENTER SOLDER
BALL IN THE OUTER ROW.
BALL COUNT
0.45
eE
0.80 BSC.
BALL PITCH
eD
0.80 BSC
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
A2,A3,A4,A5,A6,A7,A8,A9
B1,B10,C1,C10,D1,D10
E1,E10,F1,F10,G1,G10
H1,H10,J1,J10,K1,K10,L1,L10
M2,M3,M4,M5,M6,M7,M8,M9
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE
OUTER ROW SD OR SE = 0.000.
BALL DIAMETER
DEPOPULATED SOLDER BALLS
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE
OUTER ROW, SD OR SE = e/2
8.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
9.
N/A
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3423 \ 16-038.21a
10
S75WS-N Based MCPs
S75WS-N_02_A2 October 6, 2005
P r e l i m i n a r y
5.5
Physical Dimensions – FND115 – Fine Pitch Ball Grid Array 11 x 13 mm
A
D
D1
eD
0.15 C
(2X)
10
9
8
7
6
E
eE
SE
7
E1
5
4
3
2
1
P
PIN A1
CORNER
9
N M
B
INDEX MARK
J
H G F
E
D C B
A
PIN A1
CORNER
7
SD
0.15 C
TOP VIEW
L K
(2X)
BOTTOM VIEW
0.20 C
A A2
A1
C
SIDE VIEW
6
0.08 C
b
115X
0.15
0.08
M C A B
M C
NOTES:
PACKAGE
FND 115
JEDEC
N/A
DxE
13.00 mm x 11.00 mm
PACKAGE
SYMBOL
MIN
NOM
MAX
A
---
---
1.40
A1
0.17
---
---
A2
0.98
---
1.15
D
13.00 BSC.
PROFILE
BALL HEIGHT
11.00 BSC.
BODY SIZE
MATRIX FOOTPRINT
E1
7.20 BSC.
MD
14
MATRIX SIZE D DIRECTION
ME
10
MATRIX SIZE E DIRECTION
MATRIX FOOTPRINT
115
0.40
BALL POSITION DESIGNATION PER JEP95, SECTION
4.3, SPP-010.
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"
DIRECTION.
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E"
DIRECTION.
n IS THE NUMBER OF POPULTED SOLDER BALL
POSITIONS FOR MATRIX SIZE MD X ME.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO
DATUMS A AND B AND DEFINE THE POSITION OF THE
CENTER SOLDER BALL IN THE OUTER ROW.
BALL COUNT
0.45
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS
IN THE OUTER ROW SD OR SE = 0.000.
BALL DIAMETER
eE
0.80 BSC.
BALL PITCH
eD
0.80 BSC
BALL PITCH
0.40 BSC.
SOLDER BALL PLACEMENT
SD SE
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BODY SIZE
10.40 BSC.
0.35
2.
BODY THICKNESS
E
n
DIMENSIONING AND TOLERANCING METHODS PER
ASME Y14.5M-1994.
NOTE
D1
Øb
1.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS
IN THE OUTER ROW, SD OR SE = e/2
8.
"+" INDICATES THE THEORETICAL CENTER OF
DEPOPULATED BALLS.
9.
A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER
OR INK MARK, METALLIZED MARK INDENTATION OR
OTHER MEANS.
A3-A8,B3-B8,C1,N3-N8,P3-P8 DEPOPULATED SOLDER BALLS
3524 \ 16-038.19 \ 10.5.05
October 6, 2005 S75WS-N_02_A2
S75WS-N Based MCPs
11
A d v a n c e
6
I n f o r m a t i o n
MCP Revisions
Revision A0 (February 17, 2005)
Initial Release
Revision A1 (September 8, 2005)
Global
Removed references to the S29RS-N data sheet
Product Selector Guide
Updated table and added 80 MHz options
Ordering Information
Updated table with new options
MCP Configurations and Valid Combinations
Updated table to reflect new options
Input/Output Descriptions
Updated table and changed some pin names
MCP Block Diagram
Updated the illustration
Connection Diagram
Updated the pinout diagram
Physical Dimensions
Added the FEA084 package diagram
Look-Ahead Connection Diagram
Removed from data sheet
S29WS-N Flash Module
Updated to the latest revision
Revision A2 (October 6, 2005)
Global
Added ORNAND Flash information
Product Selector Guide
Added ORNAND options
Ordering Information
Updated table with new options
MCP Block Diagram
Added the ORNAND illustration
Connection Diagram
Added the pinout diagram for the ORNAND device
Physical Dimensions
Added the FND115 package diagram
12
S75WS-N Based MCPs
S75WS_02_A2 October 6, 2005
A d v a n c e
I n f o r m a t i o n
S29WS-N Flash Module
Removed from MCP. Available as a standalone document.
1.8 V Type 4 pSRAM Module
Removed from MCP. Available as a standalone document.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary
industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that
includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal
injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control,
medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and
artificial satellite). Please note that Spansion LLC will not be liable to you and/or any third party for any claims or damages arising in connection with abovementioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such
failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels
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The contents of this document are subject to change without notice. This document may contain information on a Spansion LLC product under development
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names used in this publication are for identification purposes only and may be trademarks of their respective companies.
October 6, 2005 S75WS_02_A2
S75WS-N Based MCPs
13