ROHM R8002ANX

Data Sheet
10V Drive Nch MOSFET
R8002ANX
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
TO-220FM
φ3.2
10.0
4.5
1.2
1.3
14.0
2.5
8.0
15.0
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
12.0
2.8
(1) Gate
(2) Drain
(3) Source
0.8
2.54
2.54
0.75
2.6
(1) (2) (3)
 Application
Switching
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
R8002ANX
 Inner circuit
Bulk
500

 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Drain-source voltage
VDSS
Gate-source voltage
Drain current
Continuous
VGSS
ID *3
∗1
(1) Gate
(2) Drain
(3) Source
Limits
Unit
800
30
V
V
2
A
Pulsed
Continuous
IDP
IS
*1
*3
8
2
A
A
Pulsed
ISP
*1
8
A
Avalanche current
IAS
*2
Avalanche energy
EAS *2
PD *4
Tch
Tstg
1
0.265
35
A
mJ
W
150
55 to 150
C
C
Limits
3.57
Unit
C / W
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
(1)
(2)
(3)
1 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 L
500H, VDD=50V, RG=25, T ch=25°C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25°C
 Thermal resistance
Parameter
Channel to Case
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Symbol
Rth (ch-c)
1/6
2011.10 - Rev.A
Data Sheet
R8002ANX
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Max.
Unit
-
-
100
nA
VGS=30V, VDS=0V
800
-
-
V
ID=1mA, VGS=0V
IGSS
Drain-source breakdown voltage V(BR)DSS
Conditions
Typ.
IDSS
-
-
100
A
VDS=800V, VGS=0V
VGS (th)
3.0
-
5.0
V
VDS=10V, ID=1mA
RDS (on)*
-
3.3
4.3

ID=1.0A, VGS=10V
l Yfs l*
0.5
-
-
S
VDS=10V, ID=1.0A
Input capacitance
Ciss
-
210
-
pF
VDS=25V
Output capacitance
Coss
-
130
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
14
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
17
-
ns
VDD 400V, ID=1.0A
tr *
-
20
-
ns
VGS=10V
Turn-off delay time
td(off) *
-
33
-
ns
RL=400
Fall time
tf *
Qg *
Qgs *
Qgd *
-
70
-
ns
RG=10
-
12.7
-
nC
VDD 400V
-
2.7
4.3
-
nC
nC
ID=2.0A
VGS=10V
Min.
-
Typ.
-
Max.
1.5
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Rise time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol
VSD *
Unit
V
Conditions
IS=2.0A, VGS=0V
*Pulsed
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.10 - Rev.A
Data Sheet
R8002ANX
Electrical characteristic curves (Ta=25C)
Fig.2 Typical Output Characteristics (Ⅱ)
Fig.1 Typical Output Characteristics (Ⅰ)
0.5
2
Ta=25°C
pulsed
Ta=25°C
pulsed
VGS=10.0V
0.4
VGS=7.0V
Drain Current : ID [A]
Drain Current : ID [A]
VGS=8.0V
0.3
VGS=8.0V
1.5
VGS=10.0V
VGS=7.0V
VGS=6.5V
0.2
VGS=6.0V
1
VGS=6.5V
VGS=6.0V
0.5
VGS=5.5V
VGS=5.5V
0.1
VGS=5.5V
VGS=5.0V
0
0
0
0.2
0.4
0.6
0.8
1
0
1
Drain-Source Voltage : VDS [V]
4
5
6
7
8
9
10
Fig.4 Gate Threshold Voltage vs. Channel Temperature
10
6
VDS=10V
pulsed
Gate Threshold Voltage : VGS(th) [V]
VDS=10V
ID=1mA
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
Drain Currnt : ID [A]
3
Drain-Source Voltage : VDS [V]
Fig.3 Typical Transfer Characteristics
0.1
0.01
0.001
5
4
3
2
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-50
0
50
100
150
Channel Temperature : Tch [℃]
Gate-Source Voltage : VGS [V]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
100
Static Drain-Source On-State Resistance : RDS(on) [Ω]
9
VGS=10V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [Ω]
2
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
1
0.1
0.01
VDS=10V
pulsed
8
7
6
ID=2A
5
4
ID=1A
3
2
1
0
0.1
1
10
-50
Drain Current : ID [A]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
0
50
100
150
Channel Temperature : Tch [℃]
3/6
2011.10 - Rev.A
Data Sheet
R8002ANX
Fig.7 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.8 Forward Transfer Admittance vs. Drain Current
10
10
VDS=10V
pulsed
8
Forward Transfer Admittance
Yfs [S]
Static Drain-Source On-State Resistance
RDS(on) [Ω]
Ta=25°C
pulsed
6
ID=1.0A
ID=2.0A
4
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
2
0
0
5
10
15
20
25
0.001
0.001
30
0.1
1
10
Drain Current : ID [A]
Fig.9 Source Current vs. Source-Drain Voltage
Fig.10 Typical Capacitance vs. Drain-Source Voltage
10000
10
VGS=0V
pulsed
Ta=25°C
f=1MHz
VGS=0V
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
Capacitance : C [pF]
Source Current : Is [A]
0.01
Gate-Source Voltage : VGS [V]
Ciss
100
Coss
0.1
10
Crss
1
0.01
0.0
0.5
1.0
0.01
1.5
0.1
1
100
1000
Drain-Source Voltage : VDS [V]
Source-Drain Voltage : VSD [V]
Fig.12 Dynamic Input Characteristics
Fig.11 Switching Characteristics
10000
12
VDD≒400V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
tf
100
td(off)
tr
10
Ta=25°C
VDD=400V
ID=2A
Pulsed
10
Gate-Source Voltage : VGS [V]
1000
Switching Time : t [ns]
10
8
6
4
td(on)
2
1
0
0.01
0.1
1
10
0
Drain Current : ID [A]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5
10
15
20
Total Gate Charge : Qg [nC]
4/6
2011.10 - Rev.A
Data Sheet
R8002ANX
Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width
Fig.14 Maximum Safe Operating Area
100
Ta=25°C
Single Pulse
Ta=25°C
Single Pulse
10
1
Drain Current : ID [ A ]
Normalized Transient Thermal Resistance : r(t)
10
0.1
0.01
Operation in this area
is limited by RDS(on)
(VGS = 10V)
PW = 100μs
1
PW = 1ms
0.1
PW = 10ms
0.01
0.001
Rth(ch-a)=64.2°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.0001
0.0001
0.001
0.001
0.01
0.1
1
10
100
1000
0.1
Pulse width : Pw (s)
1
10
100
1000
Drain-Source Voltage : VDS [ V ]
Fig.15 Reverse Recovery Time vs. Source Current
Reverse Recovery Time : trr [ns]
1000
Ta=25°C
Vgs=0V
di/dt=100A/ms
Pulsed
100
10
0
1
10
Source Current : IS [A]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.10 - Rev.A
Data Sheet
R8002ANX
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
90%
td(off)
tr
ton
tf
toff
Fig.1-2 Switching Waveforms
Fig.1-1 Switching Time Measurement Circuit
VG
VGS
ID
VDS
RL
Qg
VGS
D.U.T.
IG(Const.)
Qgs
Qgd
VDD
Charge
Fig.2-2 Gate Charge Waveform
Fig.2-1 Gate Charge Measurement Circuit
VGS
IAS
VDS
V(BR)DSS
D.U.T.
RG
L
VDD
IAS
VDD
EAS =
2
Fig.3-1 Avalanche Measurement Circuit
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1
2
L IAS
2
V(BR)DSS
V(BR)DSS - VDD
Fig.3-2 Avalanche Waveform
6/6
2011.10 - Rev.A
Notice
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A