Data Sheet 10V Drive Nch MOSFET R8002ANX Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM φ3.2 10.0 4.5 1.2 1.3 14.0 2.5 8.0 15.0 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 12.0 2.8 (1) Gate (2) Drain (3) Source 0.8 2.54 2.54 0.75 2.6 (1) (2) (3) Application Switching Packaging specifications Type Package Code Basic ordering unit (pieces) R8002ANX Inner circuit Bulk 500 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage Drain current Continuous VGSS ID *3 ∗1 (1) Gate (2) Drain (3) Source Limits Unit 800 30 V V 2 A Pulsed Continuous IDP IS *1 *3 8 2 A A Pulsed ISP *1 8 A Avalanche current IAS *2 Avalanche energy EAS *2 PD *4 Tch Tstg 1 0.265 35 A mJ W 150 55 to 150 C C Limits 3.57 Unit C / W Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25°C *3 Limited only by maximum channel temperature allowed. *4 TC=25°C Thermal resistance Parameter Channel to Case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol Rth (ch-c) 1/6 2011.10 - Rev.A Data Sheet R8002ANX Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Max. Unit - - 100 nA VGS=30V, VDS=0V 800 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions Typ. IDSS - - 100 A VDS=800V, VGS=0V VGS (th) 3.0 - 5.0 V VDS=10V, ID=1mA RDS (on)* - 3.3 4.3 ID=1.0A, VGS=10V l Yfs l* 0.5 - - S VDS=10V, ID=1.0A Input capacitance Ciss - 210 - pF VDS=25V Output capacitance Coss - 130 - pF VGS=0V Reverse transfer capacitance Crss - 14 - pF f=1MHz Turn-on delay time td(on) * - 17 - ns VDD 400V, ID=1.0A tr * - 20 - ns VGS=10V Turn-off delay time td(off) * - 33 - ns RL=400 Fall time tf * Qg * Qgs * Qgd * - 70 - ns RG=10 - 12.7 - nC VDD 400V - 2.7 4.3 - nC nC ID=2.0A VGS=10V Min. - Typ. - Max. 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Total gate charge Gate-source charge Gate-drain charge *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Unit V Conditions IS=2.0A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A Data Sheet R8002ANX Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 0.5 2 Ta=25°C pulsed Ta=25°C pulsed VGS=10.0V 0.4 VGS=7.0V Drain Current : ID [A] Drain Current : ID [A] VGS=8.0V 0.3 VGS=8.0V 1.5 VGS=10.0V VGS=7.0V VGS=6.5V 0.2 VGS=6.0V 1 VGS=6.5V VGS=6.0V 0.5 VGS=5.5V VGS=5.5V 0.1 VGS=5.5V VGS=5.0V 0 0 0 0.2 0.4 0.6 0.8 1 0 1 Drain-Source Voltage : VDS [V] 4 5 6 7 8 9 10 Fig.4 Gate Threshold Voltage vs. Channel Temperature 10 6 VDS=10V pulsed Gate Threshold Voltage : VGS(th) [V] VDS=10V ID=1mA pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Drain Currnt : ID [A] 3 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 0.1 0.01 0.001 5 4 3 2 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -50 0 50 100 150 Channel Temperature : Tch [℃] Gate-Source Voltage : VGS [V] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 100 Static Drain-Source On-State Resistance : RDS(on) [Ω] 9 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] 2 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 0.1 0.01 VDS=10V pulsed 8 7 6 ID=2A 5 4 ID=1A 3 2 1 0 0.1 1 10 -50 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 50 100 150 Channel Temperature : Tch [℃] 3/6 2011.10 - Rev.A Data Sheet R8002ANX Fig.7 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.8 Forward Transfer Admittance vs. Drain Current 10 10 VDS=10V pulsed 8 Forward Transfer Admittance Yfs [S] Static Drain-Source On-State Resistance RDS(on) [Ω] Ta=25°C pulsed 6 ID=1.0A ID=2.0A 4 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 2 0 0 5 10 15 20 25 0.001 0.001 30 0.1 1 10 Drain Current : ID [A] Fig.9 Source Current vs. Source-Drain Voltage Fig.10 Typical Capacitance vs. Drain-Source Voltage 10000 10 VGS=0V pulsed Ta=25°C f=1MHz VGS=0V 1000 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Capacitance : C [pF] Source Current : Is [A] 0.01 Gate-Source Voltage : VGS [V] Ciss 100 Coss 0.1 10 Crss 1 0.01 0.0 0.5 1.0 0.01 1.5 0.1 1 100 1000 Drain-Source Voltage : VDS [V] Source-Drain Voltage : VSD [V] Fig.12 Dynamic Input Characteristics Fig.11 Switching Characteristics 10000 12 VDD≒400V VGS=10V RG=10Ω Ta=25°C Pulsed tf 100 td(off) tr 10 Ta=25°C VDD=400V ID=2A Pulsed 10 Gate-Source Voltage : VGS [V] 1000 Switching Time : t [ns] 10 8 6 4 td(on) 2 1 0 0.01 0.1 1 10 0 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5 10 15 20 Total Gate Charge : Qg [nC] 4/6 2011.10 - Rev.A Data Sheet R8002ANX Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width Fig.14 Maximum Safe Operating Area 100 Ta=25°C Single Pulse Ta=25°C Single Pulse 10 1 Drain Current : ID [ A ] Normalized Transient Thermal Resistance : r（t） 10 0.1 0.01 Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs 1 PW = 1ms 0.1 PW = 10ms 0.01 0.001 Rth(ch-a)=64.2°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.0001 0.0001 0.001 0.001 0.01 0.1 1 10 100 1000 0.1 Pulse width : Pw (s) 1 10 100 1000 Drain-Source Voltage : VDS [ V ] Fig.15 Reverse Recovery Time vs. Source Current Reverse Recovery Time : trr [ns] 1000 Ta=25°C Vgs=0V di/dt=100A/ms Pulsed 100 10 0 1 10 Source Current : IS [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.10 - Rev.A Data Sheet R8002ANX Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = 2 Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A