2N5114 thru 2N5116 Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Surface mount equivalent to JEDEC registered 2N5116. • Screening in reference to MIL-PRF-19500 is available. (See part nomenclature.) • RoHS compliant versions available (commercial grade only). TO-18 (TO-206AA) Package Also available in: UB package (surface mount) 2N5114UB – 2N5116UB APPLICATIONS / BENEFITS • • Leaded TO-18 package. Lightweight. o MAXIMUM RATINGS @ T C = +25 C unless otherwise noted. Parameters/Test Conditions Junction and Storage Temperature (1) Gate-Source Voltage Drain-Source Voltage (1) Drain-Gate Voltage Gate Current o (2) Steady-State Power Dissipation @ T A = +25 C Symbol Value T J and T STG V GS V DS V DG IG PD -65 to +200 30 30 30 50 0.500 Notes: 1. Symmetrical geometry allows operation of those units with source / drain leads interchanged. 2. Derate linearly 3.0 mW/°C for T A > +25°C. Unit o C V V V mA W MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0006, Rev. 2 (111983) ©2011 Microsemi Corporation Page 1 of 5 2N5114 thru 2N5116 MECHANICAL and PACKAGING • • • • • CASE: Hermetically sealed, Nickel plated Kovar Base, Nickel Cap. TERMINALS: Gold plate over nickel, Kovar, Solder dipped. RoHS compliant Matte/Tin plating available on commercial grade only. MARKING: Part Number, Data Code, Manufacturer’s ID. WEIGHT: Approximately 0.3 grams. See Package Dimensions on last page. PART NOMENCLATURE MX 2N5114 (e3) Reliability Level MQ (reference JAN) MX (reference JANTX) MV (reference JANTXV) Blank = Commercial RoHS Compliance e3 = RoHS Compliant (available on commercial grade only) Blank = non-RoHS Compliant JEDEC type number (see Electrical Characteristics table) T4-LDS-0006, Rev. 2 (111983) ©2011 Microsemi Corporation Page 2 of 5 2N5114 thru 2N5116 o ELECTRICAL CHARACTERISTICS @ T A = +25 C unless otherwise noted. Parameters / Test Conditions Symbol Min. Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 μA V(BR)GSS 30 Drain-Source “On” State Voltage VGS = 0 V, ID = -15 mA VGS = 0 V, ID = -7.0 mA VGS = 0 V, ID = -3.0 mA 2N5114 2N5115 2N5116 Gate Reverse Current VDS = 0, VGS = 20 V Max. Unit V VDS(on) -1.3 -0.8 -0.6 V IGSS 500 pA -500 -500 -500 pA Drain Current Cutoff VGS = 12 V, VDS = -15 V VGS = 7.0 V, VDS = -15 V VGS = 5.0 V, VDS = -15 V 2N5114 2N5115 2N5116 ID(off) Zero Gate Voltage Drain Current VGS = 0, VDS = -18V VGS = 0, VDS = -15V VGS = 0, VDS = -15V 2N5114 2N5115 2N5116 IDSS -30 -15 -5.0 -90 -60 -25 mA Gate-Source Cutoff VDS = -15, ID = -1.0 nA VDS = -15, ID = -1.0 nA VDS = -15, ID = -1.0 nA 2N5114 2N5115 2N5116 VGS(off) 5.0 3.0 1.0 10 6.0 4.0 V Symbol Min. Max. Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Drain-Source “On” State Resistance VGS = 0, ID = -1.0 mA Ω 2N5114 2N5115 2N5116 rds(on)1 75 100 175 2N5114 2N5115 2N5116 rds(on)2 75 100 175 Ω Small-Signal, Common-Source Short-Circuit Reverse Transfer Capacitance 2N5114 VGS = 12 V dc, VDS = 0 2N5115 VGS = 7.0 V dc, VDS = 0 2N5116 VGS = 5.0 V dc, VDS = 0 Crss 7.0 pF Small-Signal, Common-Source Short-Circuit Input Capacitance VGS = 0, VDS = -15 V, f = 1.0 MHz 2N5114, 2N5115 2N5116 Ciss 25 27 pF Small-Signal Drain-Source “On” State Resistance VGS = 0, ID = 0; f = 1 kHz T4-LDS-0006, Rev. 2 (111983) ©2011 Microsemi Corporation Page 3 of 5 2N5114 thru 2N5116 o ELECTRICAL CHARACTERISTICS @ T A = +25 C unless otherwise noted. (continued) SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Delay Time Rise Time Turn-Off Delay Time T4-LDS-0006, Rev. 2 (111983) Symbol 2N5114 2N5115 2N5116 2N5114 2N5115 2N5116 2N5114 2N5115 2N5116 ©2011 Microsemi Corporation Td(on) tr Td(off) Min. Max. Unit 6 10 25 ηs 10 20 35 6 8 20 ηs ηs Page 4 of 5 2N5114 thru 2N5116 PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .030 0.76 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .010 0.25 45° TP 45° TP 1, 2, 9, 11, 12 Note 6 7,8 7,8 7,8 7,8 7,8 5 3,4 10 6 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure shown in figure 2. 7. Dimension LU applies between L 1 and L 2 . Dimension LD applies between L 2 and LL minimum. Diameter is uncontrolled in L 1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 12. Lead 1 = source, lead 2 = gate, lead 3 = drain. T4-LDS-0006, Rev. 2 (111983) ©2011 Microsemi Corporation Page 5 of 5