2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These devices are also available in a TO-205AF (TO-39) package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Surface mount equivalent of JEDEC registered 2N6796, 2N6798, 2N6800 and 2N6802 number series. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/557. *JANS qualification is available on 2N6798U only. (See part nomenclature for all available options.) • RoHS compliant by design. U-18 LCC Package Also available in: APPLICATIONS / BENEFITS • • TO-205AF (TO-39) package Compact surface mount design enables mounting in crowded areas. Military and other high-reliability applications. (Leaded Top Hat) 2N6796, 2N6798, 2N6800 & 2N6802 MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated Parameters / Test Conditions Operating & Storage Junction Temperature Range Thermal Resistance Junction-to-Case (see Figure 1) Total Power Dissipation @ TA = +25 °C (1) @ TC = +25 °C Drain-Source Voltage, dc 2N6796U 2N6798U 2N6800U 2N6802U Gate-Source Voltage, dc (2) Drain Current, dc @ TC = +25 ºC 2N6796U 2N6798U 2N6800U 2N6802U (2) Drain Current, dc @ TC = +100 ºC 2N6796U 2N6798U 2N6800U 2N6802U (3) Off-State Current (Peak Total Value) 2N6796U 2N6798U 2N6800U 2N6802U Source Current 2N6796U 2N6798U 2N6800U 2N6802U Symbol Value TJ & Tstg RӨJC -55 to +150 5.0 0.8 25 100 200 400 500 ± 20 8.0 5.5 3.0 2.5 5.0 3.5 2.0 1.5 32 22 14 11 8.0 5.5 3.0 2.5 PT VDS VGS ID1 ID2 IDM IS Unit o °C C/W W V V A A A (pk) MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 A Website: www.microsemi.com See notes on next page. T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 1 of 10 2N6796U, 2N6798U, 2N6800U, 2N6802U Notes: 1. Derate linearly 0.2 W/°C for TC > +25 °C. 2. The following formula derives the maximum theoretical ID limit. ID is also limited by package and internal wires and may be limited due to pin diameter. 3. IDM = 4 x ID1 as calculated in note 1. MECHANICAL and PACKAGING • • • • • CASE: Ceramic LCC-18 with kovar gold plated lid. TERMINALS: Gold plating over nickel. MARKING: Manufacturer's ID, part number, date code, ESD symbol at Pin 1 location. TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6796 U Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS level (2N6798) Blank = Commercial Surface Mount package JEDEC type number (see Electrical Characteristics table) Symbol di/dt IF RG VDD VDS VGS SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 2 of 10 2N6796U, 2N6798U, 2N6800U, 2N6802U ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage 2N6796U 2N6798U 2N6800U 2N6802U VGS = 0 V, ID = 1.0 mA Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25 mA VDS ≥ VGS, ID = 0.25 mA, TJ = +125°C VDS ≥ VGS, ID = 0.25 mA, TJ = -55°C Gate Current VGS = ± 20 V, VDS = 0 V VGS = ± 20 V, VDS = 0 V, TJ = +125°C Symbol Min. V(BR)DSS 100 200 400 500 VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 Max. Unit V 4.0 V 5.0 IGSS1 IGSS2 ±100 ±200 nA Drain Current VGS = 0 V, VDS = 80 V VGS = 0 V, VDS = 160 V VGS = 0 V, VDS = 320 V VGS = 0 V, VDS = 400 V 2N6796U 2N6798U 2N6800U 2N6802U IDSS1 25 µA Drain Current VGS = 0 V, VDS = 80 V, TJ = +125 °C VGS = 0 V, VDS = 160 V, TJ = +125 °C VGS = 0 V, VDS = 320 V, TJ = +125 °C VGS = 0 V, VDS = 400 V, TJ = +125 °C 2N6796U 2N6798U 2N6800U 2N6802U IDSS2 0.25 mA Static Drain-Source On-State Resistance VGS = 10 V, ID = 5.0 A pulsed VGS = 10 V, ID = 3.5 A pulsed VGS = 10 V, ID = 2.0 A pulsed VGS = 10 V, ID = 1.5 A pulsed 2N6796U 2N6798U 2N6800U 2N6802U Static Drain-Source On-State Resistance VGS = 10 V, ID = 8.0 A pulsed VGS = 10 V, ID = 5.5 A pulsed VGS = 10 V, ID = 3.0 A pulsed VGS = 10 V, ID = 2.5 A pulsed 2N6796U 2N6798U 2N6800U 2N6802U Static Drain-Source On-State Resistance TJ = +125°C VGS = 10 V, ID = 5.0 A pulsed VGS = 10 V, ID = 3.5 A pulsed VGS = 10 V, ID = 2.0 A pulsed VGS = 10 V, ID = 1.5 A pulsed 2N6796U 2N6798U 2N6800U 2N6802U Diode Forward Voltage VGS = 0 V, ID = 8.0 A pulsed VGS = 0 V, ID = 5.5 A pulsed VGS = 0 V, ID = 3.0 A pulsed VGS = 0 V, ID = 2.5 A pulsed 2N6796U 2N6798U 2N6800U 2N6802U T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation rDS(on)1 rDS(on)2 rDS(on)3 VSD 0.18 0.40 1.00 1.50 0.195 0.420 1.100 1.600 0.35 0.75 2.40 3.50 1.5 1.4 1.4 1.4 Ω Ω Ω V Page 3 of 10 2N6796U, 2N6798U, 2N6800U, 2N6802U ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: Symbol On-State Gate Charge VGS = 10 V, ID = 8.0 A, VDS = 50 V VGS = 10 V, ID = 5.5 A, VDS = 50 V VGS = 10 V, ID = 3.0 A, VDS = 50 V VGS = 10 V, ID = 2.5 A, VDS = 50 V 2N6796U 2N6798U 2N6800U 2N6802U Gate to Source Charge VGS = 10 V, ID = 8.0 A, VDS = 50 V VGS = 10 V, ID = 5.5 A, VDS = 50 V VGS = 10 V, ID = 3.0 A, VDS = 50 V VGS = 10 V, ID = 2.5 A, VDS = 50 V 2N6796U 2N6798U 2N6800U 2N6802U Gate to Drain Charge VGS = 10 V, ID = 8.0 A, VDS = 50 V VGS = 10 V, ID = 5.5 A, VDS = 50 V VGS = 10 V, ID = 3.0 A, VDS = 50 V VGS = 10 V, ID = 2.5 A, VDS = 50 V 2N6796U 2N6798U 2N6800U 2N6802U Min. Max. Unit Qg(on) 28.51 42.07 34.75 33.00 nC Qgs 6.34 5.29 5.75 4.46 nC Qgd 16.59 28.11 16.59 28.11 nC Max. Unit td(on) 30 ns tr 75 50 35 30 ns td(off) 40 50 55 55 ns tf 45 40 35 30 ns trr 300 500 700 900 ns SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Turn-on delay time ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V 2N6796U 2N6798U 2N6800U 2N6802U Rinse time ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V 2N6796U 2N6798U 2N6800U 2N6802U Turn-off delay time ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V 2N6796U 2N6798U 2N6800U 2N6802U Fall time ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V 2N6796U 2N6798U 2N6800U 2N6802U Diode Reverse Recovery Time di/dt ≤ 100 A/µs, VDD ≤ 50 V, IF = 8.0 A di/dt ≤ 100 A/µs, VDD ≤ 50 V, IF = 5.5 A di/dt ≤ 100 A/µs, VDD ≤ 50 V, IF = 3.0 A di/dt ≤ 100 A/µs, VDD ≤ 50 V, IF = 2.5 A 2N6796U 2N6798U 2N6800U 2N6802U T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Min. Page 4 of 10 2N6796U, 2N6798U, 2N6800U, 2N6802U THERMAL RESPONSE (ZӨJC) GRAPHS t1, RECTANGLE PULSE DURATION (seconds) FIGURE 1 – Normalized Transient Thermal Impedance T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 5 of 10 2N6796U, 2N6798U, 2N6800U, 2N6802U GRAPHS (continued) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs TC, CASE TEMPERATURE (°C) For 2N6798U ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TC, CASE TEMPERATURE (°C) For 2N6796U TC, CASE TEMPERATURE (°C) For 2N6800U T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation TC, CASE TEMPERATURE (°C) For 2N6802U Page 6 of 10 2N6796U, 2N6798U, 2N6800U, 2N6802U GRAPHS (continued) ID, DRAIN CURRENT (AMPERES) FIGURE 3 – Maximum Safe Operating Area ID, DRAIN CURRENT (AMPERES) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6796U VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6798U T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 7 of 10 2N6796U, 2N6798U, 2N6800U, 2N6802U GRAPHS (continued) ID, DRAIN CURRENT (AMPERES) FIGURE 3 – Maximum Safe Operating Area (continued) ID, DRAIN-TO-SOURCE- CURRENT (AMPERES) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6800U VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6802U T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 8 of 10 2N6796U, 2N6798U, 2N6800U, 2N6802U PACKAGE DIMENSIONS Ltr Dimensions Inches Millimeters Min Max Min Max BL BW CH LL1 LL2 LS LS1 .345 .360 .280 .295 .095 .115 .040 .055 .055 .065 .050 BSC .025 BSC 8.77 9.14 7.12 7.49 2.42 2.92 1.02 1.39 1.40 1.65 1.27 BSC 0.635 BSC LS2 LW Q1 Q2 Q3 TL TW .008 BSC .020 .030 .105 REF .120 REF .045 .055 .070 .080 .120 .130 0.203 BSC 0.51 0.76 2.67 REF 3.05 REF 1.14 1.40 1.78 2.03 3.05 3.30 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 4. Ceramic package only. T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 9 of 10 2N6796U, 2N6798U, 2N6800U, 2N6802U PAD LAYOUT PAD ASSIGNMENTS T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 10 of 10