2N6788 and 2N6790 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788 and 2N6790 devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N6788 and 2N6790 number. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/555. • RoHS compliant versions available (commercial grade only). TO-205AF (formerly TO-39) APPLICATIONS / BENEFITS • • • Package High frequency operation. Lightweight package. ESD rated to class 1A. Also available in: U-18 LCC Package (surface mount) 2N6788U & 2N6790U MAXIMUM RATINGS @ T C = +25 °C unless otherwise noted Parameters / Test Conditions Symbol Junction & Storage Temperature Thermal Resistance Junction-to-Case (see Figure 1) (1) Total Power Dissipation T J , T stg R ӨJC PT Drain to Gate Voltage Drain – Source Voltage Gate – Source Voltage (2) Drain Current, dc @ T C = +25 °C (see Figure ?) Drain Current, dc @ T C = +100 °C Off-State Current (3) Source Current 2N6788 2N6790 2N6788 2N6790 V DG V DS V GS 2N6788 2N6790 2N6788 2N6790 2N6788 2N6790 2N6788 2N6790 I D1 I D2 I DM IS Value Unit -55 to +150 6.25 0.8 100 200 100 200 ± 20 6.0 3.5 3.5 2.25 24 14 6.0 3.5 °C ºC/W W V V V A A A (pk) A Notes: 1. Derated linearly by 0.16 W/°C for T C > +25 °C. 2. The following formula derives the maximum theoretical I D limit. I D is also limited by package and internal wires and may be limited due to pin diameter. MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com 3. I DM = 4 x I D1 ; I D1 as calculated in note 2. T4-LDS-0164, Rev. 1 (121482) MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 ©2012 Microsemi Corporation Page 1 of 7 2N6788 and 2N6790 MECHANICAL and PACKAGING • • • • • CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only). MARKING: Part number, date code, manufacturer’s ID. WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6788 (e3) Reliability Level JAN=JAN level JANTX=JANTX level JANTXV=JANTXV level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number SYMBOLS & DEFINITIONS Definition Symbol ID IF TC V DD V DS V GS Drain current. Forward current. Case temperature. Drain supply voltage. Drain to source voltage. Gate to source voltage. T4-LDS-0164, Rev. 1 (121482) ©2012 Microsemi Corporation Page 2 of 7 2N6788 and 2N6790 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions Symbol Min. V (BR)DSS 100 200 Max. Unit OFF CHARACTERTICS 2N6788 2N6790 Drain-Source Breakdown Voltage V GS = 0 V, I D = 1 mA Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = 0.25 mA V DS ≥ V GS , I D = 0.25 mA, T j = +125 °C V DS ≥ V GS , I D = 0.25 mA, T j = -55 °C V GS(th)1 V GS(th)2 V GS(th)3 Gate Current V GS = ±20 V, V DS = 0 V V GS = ±20 V, V DS = 0 V, T j = +125 °C I GSS1 I GSS2 Parameters / Test Conditions 2.0 1.0 V 4.0 V 5.0 ±100 ±200 nA Max. Unit I DSS1 25 µA Symbol Min. ON CHARACTERISTICS Drain Current V GS = 0V, V DS = 80 V V GS = 0V, V DS = 160 V 2N6788 2N6790 Drain Current V GS = 0V, V DS = 80 V, T j = +125 °C V GS = 0V, V DS = 160 V, T j = +125 °C 2N6788 2N6790 I DSS2 0.25 mA Static Drain-Source On-State Resistance V GS = 10 V, I D = 3.5 A pulsed V GS = 10 V, I D = 2.25 A pulsed 2N6788 2N6790 r DS(on)1 0.30 0.80 Ω Static Drain-Source On-State Resistance V GS = 10 V, I D = 6.0 A pulsed V GS = 10 V, I D = 3.5 A pulsed 2N6788 2N6790 r DS(on)2 0.35 0.85 Ω Static Drain-Source On-State Resistance T j = +125 °C: V GS = 10 V, I D = 3.5 A pulsed V GS = 10 V, I D = 2.25 A pulsed 2N6788 2N6790 r DS(on)3 0.54 1.50 Ω Diode Forward Voltage V GS = 0 V, I D = 6.0 A pulsed V GS = 0 V, I D = 3.5 A pulsed 2N6788 2N6790 V SD 1.8 1.5 V T4-LDS-0164, Rev. 1 (121482) ©2012 Microsemi Corporation Page 3 of 7 2N6788 and 2N6790 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Max. Unit Q g(on) 18.0 14.3 nC 2N6788 2N6790 Q gs 4.0 3.0 nC 2N6788 2N6790 Q gd 9.0 9.0 nC Max. Unit Gate Charge: On-State Gate Charge V GS = 10 V, I D = 6.0 A, V DS = 50 V V GS = 10 V, I D = 3.5 A, V DS = 100 V 2N6788 2N6790 Gate to Source Charge V GS = 10 V, I D = 6.0 A, V DS = 50 V V GS = 10 V, I D = 3.5 A, V DS = 100 V Gate to Drain Charge V GS = 10 V, I D = 6.0 A, V DS = 50 V V GS = 10 V, I D = 3.5 A, V DS = 100 V SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Min. Turn-on delay time I D = 6.0 A, V GS = 10 V, R G = 7.5 Ω, V DD = 35 V I D = 3.5 A, V GS = 10 V, R G = 7.5 Ω, V DD = 74 V 2N6788 2N6790 t d(on) 40 ns Rinse time I D = 6.0 A, V GS = 10 V, R G = 7.5 Ω, V DD = 35 V I D = 3.5 A, V GS = 10 V, R G = 7.5 Ω, V DD = 74 V 2N6788 2N6790 tr 70 50 ns Turn-off delay time I D = 6.0 A, V GS = 10 V, R G = 7.5 Ω, V DD = 35 V I D = 3.5 A, V GS = 10 V, R G = 7.5 Ω, V DD = 74 V 2N6788 2N6790 t d(off) 40 50 ns Fall time I D = 6.0 A, V GS = 10 V, R G = 7.5 Ω, V DD = 35 V I D = 3.5 A, V GS = 10 V, R G = 7.5 Ω, V DD = 74 V 2N6788 2N6790 tf 70 50 ns Diode Reverse Recovery Time di/dt = 100 A/µs, V DD ≤ 50 V, I F = 6.0 A di/dt = 100 A/µs, V DD ≤ 50 V, I F = 3.5 A 2N6788 2N6790 t rr 240 400 ns T4-LDS-0164, Rev. 1 (121482) ©2012 Microsemi Corporation Page 4 of 7 2N6788 and 2N6790 THERMAL RESPONSE (ZӨJC) GRAPHS t 1 , RECTANGULAR PULSE DURATION (SECONDS) ID DRAIN CURRENT (AMPERES) ID DRAIN CURRENT (AMPERES) Figure 1 Thermal Impedance Curves T C CASE TEMPERATURE (°C) (2N6788) T C CASE TEMPERATURE (°C) (2N6790) Figure 2 Maximum Drain Current vs. Case Temperature Graph T4-LDS-0164, Rev. 1 (121482) ©2012 Microsemi Corporation Page 5 of 7 2N6788 and 2N6790 ID DRAIN CURRENT (AMPERES) GRAPHS (continued) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) ID DRAIN CURRENT (AMPERES) Maximum Safe Operating Area (2N6788) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) Maximum Safe Operating Area (2N6790) T4-LDS-0164, Rev. 1 (121482) ©2012 Microsemi Corporation Page 6 of 7 2N6788 and 2N6790 PACKAGE DIMENSIONS Ltr Dimensions Inch Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .160 .180 4.07 4.57 HD .335 .370 8.51 9.40 h .009 .041 0.23 1.04 J .028 .034 0.71 0.86 3 k .029 .045 0.74 1.14 3, 4 LD .016 .021 0.41 0.53 7, 8 LL .500 .750 12.7 19.05 7, 8, 12 LS LU .200 TP .016 L1 .019 5.08 TP 0.41 .050 L2 .250 P .100 Notes 6 0.48 7, 8 1.27 7, 8 6.35 7, 8 2.54 Q .050 1.27 5 r α .010 45° TP 0.25 45° TP 10 6 SCHEMATIC CIRCUIT NOTES: 1. 2. 3. 4. 5. 6. Dimensions are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 inch (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 12. Lead 1 = source, lead 2 = gate, lead 3 = drain. T4-LDS-0164, Rev. 1 (121482) ©2012 Microsemi Corporation Page 7 of 7