Data Sheet Rectifier diode 1SR156-400 Applications For fast rectifier Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 4 ① ② 0.1±0.02 0.1 4.2 5.0±0.3 2 4.5±0.2 Features 1) Small power mold type. (PMDS) 2) High reliability. 3) High switching speed. 1.2±0.3 2.0 2.6±0.2 PMDS 2.0±0.2 1.5±0.2 Construction Silicon diffused junction Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date Taping dimensions (Unit : mm) 2.0±0.05 0.3 φ1.55±0.05 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 4.0±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25C) Parameter Symbol VRMS Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1) Mounted on alumina board Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Limits Unit V V A A C C 500 400 1 20 150 55 to +150 Min. Typ. Max. Unit Conditions - - 1.3 V IF=0.8A Reverse current IR - - 10 uA Reverse recovery time trr - - 0.4 us VR=400V IF=10mA, IR=10mA, Irr=1mA www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A 1000 Ta=150℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000000 Ta=75℃ Ta=125℃ 100000 Ta=25℃ Ta=25℃ 10 10000 Ta=75℃ 1000 Ta=25℃ 100 1 0 200 400 600 800 1000 Ta=25℃ 10 1 1200 0 100 200 300 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 1040 REVERSE CURRENT : IR(nA) FORWARD VOLTAGE : V F(mV) Ta=25℃ IF=0.8A n=30pcs 1030 1020 AVE:1020.5mV 1010 800 700 600 500 400 300 AVE:97.5nA 200 100 1000 0 VF DISPERSION MAP 1 0.1 5 1cyc 8.3ms AVE:34.0A 50 220 210 200 190 AVE:200.7ns 180 170 160 0 35 30 AVE:38.3pF 25 20 15 10 5 0 Ifsm 40 8.3ms 60 40 20 0 IM=1mA IF=0.5A 20 10 10 TIME:t(ms) IFSM-t CHARACTERISTICS 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1ms 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 2.5 Rth(j-a) 100 tim 300us Rth(j-c) 10 D=1/2 DC 2 Sin(θ=180) 1.5 1 1 0.5 0.1 1 8.3ms 1cyc 30 3 Mounted on epoxy board FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT : I FSM(A) 1000 t 30 Ta=25℃ f=1MHz VR=0V n=10pcs 40 trr DISPERSION MAP Ifsm 25 45 1 80 20 0 IFSM DISRESION MAP 100 15 50 Ta=25℃ IF=10mA IR=10mA Irr=0.10*IR n=10pcs 230 PEAK SURGE FORWARD CURRENT : I FSM(A) REVERSE RECOVERY TIME:trr(ns) Ifsm 10 Ct DISPERSION MAP 240 100 0 IR DISPERSION MAP 150 PEAK SURGE FORWARD CURRENT : I FSM(A) 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ VR=400V n=30pcs 900 f=1MHz 400 1000 1050 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ Ta=150℃ 100 REVERSE CURRENT : IR(nA) FORWARD CURRENT : I F(mA) Data Sheet 1SR156-400 0.001 0 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 100 1000 0 1 2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 2011.06 - Rev.A 0.1 Sin(θ=180) 0.06 D=1/2 0.04 DC 0.02 3 2.5 0A Io 0V VR t 2 T D=t/T VR=200V Tj=150℃ DC 1.5 D=1/2 1 0.5 0 0 100 200 300 400 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0V 2.5 VR t 2 T DC D=t/T VR=200V Tj=150℃ 1.5 D=1/2 1 Sin(θ=180) 0.5 Sin(θ=180) 0 Io 0A AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 0.08 REVERSE POWER DISSIPATION:PR (W) Data Sheet 1SR156-400 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 10 AVE:14.6kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A