2SB1561 Transistors Medium Power Transistor (−60V, −2A) 2SB1561 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage , typically VCE (sat) = −0.15V at IC / IB = −1A / −50mA. 2) Collector-emitter voltage = −60V 3) Pc = 2W (on 40×40×0.7mm ceramic board). 4) Complements the 2SD2391. MPT3 1.5 2.5 4.0 0.5 4.5 1.6 (2) (3) 1.0 (1) 0.5 0.4 1.5 0.4 0.4 1.5 3.0 (1)Base (2)Collector (3)Emitter zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit VCBO VCEO −60 −60 V V VEBO IC ICP −6 −2 −6 V A A Collector power dissipation PC 0.5 2 W Junction temperature Storage temperature Tj 150 Tstg −55 to +150 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ∗1 ∗2 °C °C + + ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40 40 0.7mm ceramic board. zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO −60 −60 −6 − − − − − − − − −0.1 V V V µA IC=−50µA IC=−1mA IE=−50µA VCB=−50V µA V − VEB=−5V IC/IB=−1A/−50mA IEBO − VCE(sat) − − −0.15 −0.1 −0.35 hFE1 120 − 270 hFE2 45 − − − Transition frequency fT − Output capacitance Cob − 200 23 − − MHz pF Conditions ∗ VCE/IC=−2V/−0.5A VCE/IC=−2V/−1.5A VCE=−2V, IE=0.5A, f=100MHz VCB=−10V, IE=0A, f=1MHz ∗ ∗ Measured using pulse current Rev.A 1/3 2SB1561 Transistors zPackaging specifications and hFE Type 2SB1561 Package hFE Marking Code Basic ordering unit (pieces) MPT3 Q BL∗ T100 1000 ∗Denotes hFE z Electrical characteristic curves −5 −0.4 0.0 0 −1 −2 −3 −4 −5 −0.05 −0.02 −0.01 −5m −2m −1m 0 −0.4 −0.8 −1.2 Fig.1 Grounded emitter output characteristics Fig.2 Grounded emitter propagation characteristics Ta=25°C 200 VCE= −5V 100 50 −2V −1V 20 10 5 2 1 −5m −10m−100m −100m −1 −5 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ΙΙ ) −1000 IC/IB=20 −500 −200 −100 −50 −20 100 Ta=100°C 25°C −40°C 50 20 10 5 Ta=100°C 25°C −40°C −10 −5 −2 −1 −5m −10m−100m −100m −1 1 −5m −10m−100m −1.6 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 500 200 2 BASE TO EMITTER VOLTAGE : VBE (V) 1000 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE IB=−2mA −0.1 VCE=2V 500 −5 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage vs. collector current ( Ι ) −100m −1 −5 COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) −0.8 −0.2 −40°C −4mA 00°C −1.2 −1 −0.5 25°C A −6m 1000 VCE= −2V −2 Ta=1 −1.6 COLLECTOR CURRENT : IC (A) A A mA16m mA 0m −18 − mA −12 A −2 m 4 −1 −10 A −8m COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : lC (A) −2.0 −1000 Ta=25°C −500 −200 −100 IC/IB=50 −50 20 10 −20 −10 −5 −2 −1 −5m −10m−100m −100m −1 −5 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) Rev.A 2/3 2SB1561 200 5 2 1 2m 5m 10m 20m 50m 100m200m 500m 1 EMITTER CURRENT : IE (A) Fig.7 Gain bandwidth product vs. emitter current 2 100 Cob 50 20 10 5 2 1 −0.1 −1 −10 −100 COLLECTOR TO BASE VOLTAGE : VCE (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.8 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 20 10 Ic max(Pulse) PW 5 =1 00 2 1 m s 500m 200m 100m DC 10 200 50 m 20 Cib ms =1 PW s 50 Ta=25°C f=1MHz IE=0A IC=0A 500 0 =1 100 1000 COLLECTOR CURRENT : lC (A) Ta=25°C VCE=−2V 500 Pw TRANSITION FREQUENCY : fT (MHz) 1000 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Transistors 50m 20m Ta=25°C Single pulse 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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