2SB1184 / 2SB1243 Transistors Power Transistor (−60V, −3A) 2SB1184 / 2SB1243 zExternal dimensions (Unit : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 zStructure Epitaxial planar type PNP silicon transistor 4.4±0.2 0.9 1.0 9.5±0.5 1.5 0.9 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 2.5 1.5±0.3 2SB1184 5.5 +0.3 −0.1 zFeatures 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864. (3) 2.54 2.54 1.05 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ROHM : ATV 0.45±0.1 (1) Emitter (2) Collector (3) Base zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −3 A (DC) Collector power 2SB1184 dissipation 2SB1243 PC 1 15 W W (TC=25°C) 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C ∗1 ∗1 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Rev.A 1/3 2SB1184 / 2SB1243 Transistors zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO −60 − − V IC= −50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −50µA ICBO − − −1 µA VCB= −40V Parameter Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Measured using pulse current. Unit Conditions IEBO − − −1 µA VEB= −4V VCE(sat) − − −1 V IC/IB= −2A/ −0.2A ∗ hFE 82 − 390 − VCE= −3V, IC= −0.5A ∗ fT − 70 − MHz Cob − 50 − pF VCE= −5V, IE=0.5A, f=30MHz VCB= −10V, IE=0A, f=1MHz zPackaging specifications and hFE Taping Package Code hFE Type Basic ordering unit (pieces) 2SB1184 PQR 2SB1243 PQR TL TV2 2500 2500 − − hFE values are classified as follows : Item P Q R hFE 82 to 180 120 to 270 180 to 390 zElectrical characteristic curves −1 Ta=100°C 25°C -25°C −0.2 −0.1 −0.05 −0.02 −0.01 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics −2.5 −50mA −45mA −40mA −35mA −30mA −25mA −20mA −2.0 −15mA −1.5 −10mA −1.0 −5mA −0.5 0 0 −1 −3.0 Tc=25°C −2 −3 IB=0mA −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( ) COLLECTOR CURRENT : IC (A) −2 −0.5 −3.0 VCE= −3V −5 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) −10 Tc=25°C −50mA −45mA −40mA −35mA −30mA −25mA −20mA −15mA −2.5 −2.0 −1.5 −10mA −1.0 IB=−5mA −0.5 0 0 PC=15W −10 −20 IB=0mA −30 −40 −50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ) Rev.A 2/3 2SB1184 / 2SB1243 1k Ta=25°C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 200 VCE=−5V 100 50 −3V 20 10 5 Ta=100°C 25°C −25°C 200 100 50 20 10 5 2 2 1 −0.01−0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 1 −0.01−0.02 −0.05 −0.1−0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) −1 Ta= −25°C 25°C 100°C TRANSITION FREQUENCY : fT (MHz) −2 1000 lC/lB=10 −5 VBE(sat) −0.5 −0.2 −0.1 −0.05 Ta=100°C 25°C −25°C VCE(sat) −0.02 −0.01 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 100 50 20 10 5 2 −10 −0.1 IC/IB=50/1 −0.05 20/1 −0.02 10/1 −5 −10 1000 Ta=25°C f=1MHz IE=0A 500 200 100 50 20 10 5 2 1 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.9 Collector output capacitance vs. collector base voltage m s∗ −0.2 s∗ −0.5 −0.1 −0.05 −0.05 Tc=25°C ∗Single −0.02 nonrepetitive pulse −0.01 −0.1 −0.2 −0.5 −1 −1.0 0m −0.1 −2.0 DC −0.2 −0.2 Tc=25°C ∗Single nonrepetitive pulse 10 C 50 100 200 500 1000 IC Max. (Pulse)∗ −1 −0.5 0 =1 Pw s∗ D ∗ ms =10 PW 0m 10 −0.5 COLLECTOR CURRENT : IC (A) −5.0 COLLECTOR CURRENT : IC (A) −10.0 −5.0 −1.0 10 20 Fig.8 Gain bandwidth product vs. emitter current −10.0 −2.0 5 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current 2 −2 Fig.6 Collector-emitter saturation voltage vs.collector current 200 1 1 Ta=25°C −5 COLLECTOR CURRENT : IC (A) Ta=25°C VCE= −5V 500 −10 −0.01 −0.01−0.02 −0.05−0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) −10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) VCE= −3V 500 500 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors −0.02 −2 −5 −10 −20 −50−100 −0.01 −0.1−0.2 −0.5 −1 −2 −5 −10 −20 −50−100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operation area (2SB1184) Fig.11 Safe operation area (2SB1243) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1