2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3 EIAJ : SC-62 2.3+−0.2 0.1 0.5±0.1 9.5±0.5 (2) C0.5 0.9 0.3 5.5+ −0.1 (1) 0.4±0.1 1.5±0.1 3.0±0.2 zStructure Epitaxial planar type NPN silicon transistor 6.5±0.2 5.1+−0.2 0.1 1.5 1.6±0.1 1.5±0.3 1.5 +0.2 −0.1 2.5 +0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 2.5 2SD1766 1.0±0.2 zFeatures 1) Low VCE(sat). VCE(sat) = 0.5V(Typ.) （IC / IB = 2A / 0.2A） 2) Complements the 2SB1188 / 2SB1182 / 2SB1240. 2.3±0.2 0.55 ±0.1 1.0±0.2 (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 2SD1862 2.5±0.2 0.9 0.65Max. 0.5±0.1 (1) (2) 14.5±0.5 1.0 4.4±0.2 6.8±0.2 (3) 2.54 2.54 0.45±0.1 1.05 ROHM : ATV (1) Emitter (2) Collector (3) Base ∗ Denotes hFE zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Parameter Collector current Collector power dissipation IC 2 A (DC) ICP 2.5 A (Pulse) 0.5 2 2SD1766 ∗2 W W W (Tc=25°C) W PC 1 10 1 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2SD1758 2SD1862 ∗3 ∗1 ∗1 Single pulse, Pw=20ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager. Rev.A 1/3 2SD1766 / 2SD1758 / 2SD1862 Transistors zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 40 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 32 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA Collector cutoff current ICBO − − 1 µA VCB=20V Emitter cutoff current IEBO µA VEB=4V Parameter − − 1 82 − 390 120 − 390 VCE(sat) − 0.5 Transition frequency fT − Output capacitance Cob − 2SD1766,2SD1758, DC current transfer ratio hFE 2SD1862 Collector-emitter saturation voltage Conditions − VCE=3V, IC=0.5A ∗ 0.8 V IC/IB=2A/0.2A 100 − MHz ∗ ∗ 30 − pF VCE=5V, IE= −500mA, f=100MHz VCB=10V, IE=0A, f=1MHz ∗ Measured using pulse current. zPackaging specifications and hFE Package Taping Code T100 TL TV2 Basic ordering unit (pieces) 1000 2500 2500 − − Type hFE 2SD1766 PQR 2SD1758 PQR − 2SD1862 QR − − − hFE values are classified as follows : Item P Q R hFE 82 to 180 120 to 270 180 to 390 zElectrical characteristic curves 500 200 100 50 20 10 5 0.5 Ta=25°C Ta=25°C 2.7mA 3.0mA 500 2.4mA 0.4 DC CURRENT GAIN : hFE 1000 Ta=25°C VCE=3V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) 2000 2.1mA 1.8mA 0.3 1.5mA 1.2mA 0.2 0.9mA 0.6mA 0.1 200 VCE=3V 1V 100 50 0.3mA 2 1 0 IB=0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 0 0.4 0.8 1.2 1.6 2.0 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics 5 10 20 50 100 200 500 1A 2A COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current Rev.A 2/3 2SD1766 / 2SD1758 / 2SD1862 200 100 IC/IB=50 50 20 10 10 20 1 IC/IB=10 0.5 0.2 0.1 50 100 200 500 1A 2A 5 COLLECTOR CURRENT : IC (mA) Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 1000 Fig.5 Ta=25°C f=1MHz IE=0A IC=0A 500 Cib 200 100 Cob 50 20 10 0.5 1 2 5 10 50 100 200 200 100 50 20 −1 500 1A 2A −2 COLLECTOR CURRENT : IC (mA) 20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage −5 −10 −20 −50 −100 −200 −500 −1A EMITTER CURRENT : IE (mA) Fig.6 Transition frequency vs. emitter current Collector-emitter saturation voltage vs. collector current 5 5 COLLECTOR CURRENT : IC (A) Fig.4 10 20 Ta=25°C VCE=5V 500 COLLECTOR CURRENT : IC (A) 5 Ta=25°C TRANSITION FREQUENCY : fT (MHz) 500 20 1000 2 Ta=25°C BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Transistors 2 1 0.5 Pw=10ms∗ 100ms∗ 0.2 DC 0.1 0.05 Ta=25°C Single nonrepetitive 0.02 pulse 0.01 0.1 0.2 0.5 1 ∗ 2 5 10 20 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe operating area (2SD1766) 2 1 PW =100ms∗ 0.5 0.2 0.1 0.05 Tc=25°C Single nonrepetitive 0.02 pulse 0.01 0.1 0.2 0.5 1 ∗ 2 5 10 20 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SD1758) 3 s DC COLLECTOR CURRENT : IC (A) s m 00 =1 0.5 0m =1 Ic Max Ic Max Pulse Pw 1 Pw 2 0.2 0.1 0.05 Ta=25°C Single nonrepetitive pulse 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SD1862) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1