2SD2098 / 2SD2118 / 2SD2097 Transistors Low VCE(sat) transistor (strobe flash) 2SD2098 / 2SD2118 / 2SD2097 zExternal dimensions (Unit : mm) 2SD2098 4.0±0.3 0.5±0.1 4.5 +0.2 −0.1 1.0±0.2 (1) (2) (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.4+0.1 −0.05 0.4±0.1 1.5±0.1 3.0±0.2 Abbreviated symbol : DJ∗ ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter 2SD2118 2.3 +−0.2 0.1 C0.5 2.5 1.5 0.9 0.5±0.1 0.65±0.1 0.75 9.5±0.5 1.5±0.3 6.5±0.2 5.1+0.2 −0.1 0.3 5.5 + −0.1 0.9 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 2SD2097 2.5±0.2 0.5±0.1 (2) 14.5±0.5 0.65Max. (1) 4.4±0.2 0.9 6.8±0.2 1.0 zStructure Epitaxial planar type NPN silicon transistor 1.5 +0.2 −0.1 1.6±0.1 2.5 +0.2 −0.1 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326. (3) 2.54 2.54 1.05 ROHM : ATV 0.45±0.1 (1) Emitter (2) Collector (3) Base ∗ Denotes hFE Rev.A 1/4 2SD2098 / 2SD2118 / 2SD2097 Transistors zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V IC 5 A(DC) ICP 10 A(Pulse) ∗1 W ∗2 Collector current 0.5 2SD2098 2 Collector power dissipation PC 2SD2118 1 10 W(Tc=25°C) 1 W 2SD2097 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗3 ∗1 Single pulse Pw=10ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board glass epoxy board, 1.6 mm thick with copper plating 100mm2 or larger. zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO 50 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 20 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=50µA ICBO − − 0.5 µA VCB=40V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Unit IEBO − − 0.5 µA VEB=5V VCE(sat) − 0.3 1.0 V IC/IB=4A/0.1A ∗ VCE=2V, IC=0.5A ∗ hFE 120 − 390 − Transition frequency fT − 150 − MHz Output capacitance Cob − 35 − pF DC current transfer ratio Conditions VCE=6V, IE=−50mA, f=100MHz VCE=20V, IE=0A, f=1MHz ∗ Measured using pulse current. zPackaging specifications and hFE Package Taping Code T100 TL TV2 Basic ordering unit (pieces) 1000 2500 2500 − − Type hFE 2SD2098 QR 2SD2118 QR − 2SD2097 QR − − − hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 Rev.A 2/4 2SD2098 / 2SD2118 / 2SD2097 Transistors zElectrical characteristic curves Ta=100°C 25°C −25°C 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 4 35mA 2 5mA 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 5000 200 2V 100 1V 50 20 0.8 1.2 IB=0mA 1.6 2.0 Ta=100°C 25°C −25°C 200 100 50 20 VCE=2V 1000 500 Ta=100°C 25°C −25°C 200 100 50 20 10 5 1m 2m 5m 0.010.02 0.05 0.10.2 0.5 1 2 5 1m 2m 5m0.010.02 0.050.10.2 0.5 1 2 5 10 1 0.5 Ta=100°C 25°C −25°C 0.1 0.05 0.02 COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) 5 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 0.01 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 2 2 0.5 0.2 0.1 0.05 IC/IB=50 0.02 40 30 10 0.01 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 lC/lB=30 0.5 Ta=100°C 25°C −25°C 0.1 0.05 0.02 0.01 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) Fig.8 Collector-emitter saturation voltage vs. collector current ( ΙΙΙ ) 2 5 10 COLLECTOR CURRENT : IC (A) 1 0.2 Ta=25°C 1 Fig.5 DC current gain vs. collector current ( ΙΙΙ ) Fig.4 DC current gain vs. collector current ( ΙΙ ) 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 2 5 1m 2m 5m 0.010.02 0.050.1 0.2 0.5 1 2 Fig.3 DC current gain vs. collector current ( Ι ) 2000 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 0.4 5000 VCE=1V 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=5V 500 Fig.2 Grounded emitter output characteristics 2000 0.2 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics 500 Ta=25°C 2000 10 0 0 BASE TO EMITTER VOLTAGE : VBE (V) 1000 10mA 40mA 3 5000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1 0.5 Ta=25°C 30mA 25mA 20mA 15mA 5 10 Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 50mA 45mA DC CURRENT GAIN : hFE 5 VCE=2V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 10 5 2 lC/lB=40 1 0.5 0.2 Ta=100°C 25°C −25°C 0.1 0.05 0.02 0.01 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.9 Collector-emitter saturation voltage vs. collector current (IV) Rev.A 3/4 2SD2098 / 2SD2118 / 2SD2097 1000 lC/lB=50 1 0.5 Ta=100°C 25°C −25°C 0.2 0.1 0.05 0.02 0.01 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 Ta=25°C VCE=6V 500 200 100 50 20 10 5 2 1 −1m −2m −5m−10m−20m −50m−0.1 −0.2 −0.5 −1 COLLECTOR CURRENT : IC (A) 10 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.13 Safe operating area (2SD2098) 100 50 Cob 20 10 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage ms 50m 1 500m Cib s 100m 2 C 200m 5 D s 200 Ic max (Pulse) Ic max (Pulse) 00 =1 0m 10 Ta=25°C f=1MHz IC=0A IE=0A 0m =1 =1 0 DC 1 500m Pw 20 500 Ta=25 (°C) Single pulse 50 Pw 2 Ic max (Pulse) 1000 Pw 5 µs 00 =1 s Pw m =1 s Pw 10m = 20 Ta=25(°C) Single pulse Recommended land pattern Pw COLLECTOR CURRENT : IC (A) 50 Fig.11 Gain bandwidth product vs. emitter current COLLECTOR CURRENT : IC (A) Fig.10 Collector-emitter saturation voltage vs. collector current (V) EMITTER CURRENT : IE (A) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 2 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.14 Safe operating area (2SD2118) Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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