ROHM 2SD2097

2SD2098 / 2SD2118 / 2SD2097
Transistors
Low VCE(sat) transistor (strobe flash)
2SD2098 / 2SD2118 / 2SD2097
zExternal dimensions (Unit : mm)
2SD2098
4.0±0.3
0.5±0.1
4.5 +0.2
−0.1
1.0±0.2
(1)
(2)
(3)
0.5±0.1
0.4±0.1
1.5±0.1
0.4+0.1
−0.05
0.4±0.1
1.5±0.1
3.0±0.2
Abbreviated symbol : DJ∗
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
2SD2118
2.3 +−0.2
0.1
C0.5
2.5
1.5
0.9
0.5±0.1
0.65±0.1
0.75
9.5±0.5
1.5±0.3
6.5±0.2
5.1+0.2
−0.1
0.3
5.5 +
−0.1
0.9
0.55±0.1
2.3±0.2 2.3±0.2
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SD2097
2.5±0.2
0.5±0.1
(2)
14.5±0.5
0.65Max.
(1)
4.4±0.2
0.9
6.8±0.2
1.0
zStructure
Epitaxial planar type
NPN silicon transistor
1.5 +0.2
−0.1
1.6±0.1
2.5 +0.2
−0.1
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.25V (Typ.)
(IC/IB = 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SB1386 / 2SB1412 / 2SB1326.
(3)
2.54 2.54
1.05
ROHM : ATV
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
∗ Denotes hFE
Rev.A
1/4
2SD2098 / 2SD2118 / 2SD2097
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
IC
5
A(DC)
ICP
10
A(Pulse)
∗1
W
∗2
Collector current
0.5
2SD2098
2
Collector power
dissipation
PC
2SD2118
1
10
W(Tc=25°C)
1
W
2SD2097
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗3
∗1 Single pulse Pw=10ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board glass epoxy board, 1.6 mm thick with copper plating 100mm2 or larger.
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Collector-base breakdown voltage
BVCBO
50
−
−
V
IC=50µA
Collector-emitter breakdown voltage
BVCEO
20
−
−
V
IC=1mA
Emitter-base breakdown voltage
BVEBO
6
−
−
V
IE=50µA
ICBO
−
−
0.5
µA
VCB=40V
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Unit
IEBO
−
−
0.5
µA
VEB=5V
VCE(sat)
−
0.3
1.0
V
IC/IB=4A/0.1A
∗
VCE=2V, IC=0.5A
∗
hFE
120
−
390
−
Transition frequency
fT
−
150
−
MHz
Output capacitance
Cob
−
35
−
pF
DC current transfer ratio
Conditions
VCE=6V, IE=−50mA, f=100MHz
VCE=20V, IE=0A, f=1MHz
∗ Measured using pulse current.
zPackaging specifications and hFE
Package
Taping
Code
T100
TL
TV2
Basic ordering unit (pieces)
1000
2500
2500
−
−
Type
hFE
2SD2098
QR
2SD2118
QR
−
2SD2097
QR
−
−
−
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270
180 to 390
Rev.A
2/4
2SD2098 / 2SD2118 / 2SD2097
Transistors
zElectrical characteristic curves
Ta=100°C
25°C
−25°C
0.2
0.1
0.05
0.02
0.01
5m
2m
1m
0
4
35mA
2
5mA
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
5000
200
2V
100
1V
50
20
0.8
1.2
IB=0mA
1.6
2.0
Ta=100°C
25°C
−25°C
200
100
50
20
VCE=2V
1000
500
Ta=100°C
25°C
−25°C
200
100
50
20
10
5
1m 2m 5m 0.010.02 0.05 0.10.2 0.5 1 2
5
1m 2m 5m0.010.02 0.050.10.2 0.5 1 2
5 10
1
0.5
Ta=100°C
25°C
−25°C
0.1
0.05
0.02
COLLECTOR CURRENT : IC (A)
Fig.7 Collector-emitter
saturation voltage vs.
collector current ( ΙΙ )
5 10
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
lC/lB=10
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2
5 10
2
2
0.5
0.2
0.1
0.05
IC/IB=50
0.02
40
30
10
0.01
2m 5m0.010.02 0.05 0.1 0.2 0.5 1
lC/lB=30
0.5
Ta=100°C
25°C
−25°C
0.1
0.05
0.02
0.01
2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : IC (A)
Fig.8 Collector-emitter
saturation voltage vs.
collector current ( ΙΙΙ )
2
5 10
COLLECTOR CURRENT : IC (A)
1
0.2
Ta=25°C
1
Fig.5 DC current gain vs.
collector current ( ΙΙΙ )
Fig.4 DC current gain vs.
collector current ( ΙΙ )
5 10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
2
5
1m 2m 5m 0.010.02 0.050.1 0.2 0.5 1 2
Fig.3 DC current gain vs.
collector current ( Ι )
2000
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
0.4
5000
VCE=1V
10
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=5V
500
Fig.2 Grounded emitter output
characteristics
2000
0.2
1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation
characteristics
500
Ta=25°C
2000
10
0
0
BASE TO EMITTER VOLTAGE : VBE (V)
1000
10mA
40mA
3
5000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1
0.5
Ta=25°C
30mA
25mA
20mA
15mA
5 10
Fig.6 Collector-emitter
saturation voltage vs.
collector current ( Ι )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
2
50mA
45mA
DC CURRENT GAIN : hFE
5
VCE=2V
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
10
5
2
lC/lB=40
1
0.5
0.2
Ta=100°C
25°C
−25°C
0.1
0.05
0.02
0.01
2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2
5
10
COLLECTOR CURRENT : IC (A)
Fig.9 Collector-emitter
saturation voltage vs.
collector current (IV)
Rev.A
3/4
2SD2098 / 2SD2118 / 2SD2097
1000
lC/lB=50
1
0.5
Ta=100°C
25°C
−25°C
0.2
0.1
0.05
0.02
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2
5
10
Ta=25°C
VCE=6V
500
200
100
50
20
10
5
2
1
−1m −2m −5m−10m−20m −50m−0.1 −0.2 −0.5 −1
COLLECTOR CURRENT : IC (A)
10
20m
10m
0.2 0.5 1 2
5 10 20 50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.13 Safe operating area
(2SD2098)
100
50
Cob
20
10
0.1 0.2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.12 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
ms
50m
1
500m
Cib
s
100m
2
C
200m
5
D
s
200
Ic max (Pulse)
Ic max (Pulse)
00
=1
0m
10
Ta=25°C
f=1MHz
IC=0A
IE=0A
0m
=1
=1
0
DC
1
500m
Pw
20
500
Ta=25 (°C)
Single pulse
50
Pw
2
Ic max (Pulse)
1000
Pw
5
µs
00
=1
s
Pw
m
=1 s
Pw 10m
=
20
Ta=25(°C)
Single pulse
Recommended land
pattern
Pw
COLLECTOR CURRENT : IC (A)
50
Fig.11 Gain bandwidth product vs.
emitter current
COLLECTOR CURRENT : IC (A)
Fig.10 Collector-emitter
saturation voltage vs.
collector current (V)
EMITTER CURRENT : IE (A)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
2
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Transistors
200m
100m
50m
20m
10m
0.2 0.5 1
2
5 10 20 50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.14 Safe operating area
(2SD2118)
Rev.A
4/4
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1