RF051VA1S Diodes Switching diode RF051VA1S zApplications High frequency rectification zDimensions (Unit : mm) zLand size figure (Unit : mm) 1.1 0 .17 ± 0 .1 CATHO DE MARK 0 .0 5 1.9 ± 0.1 2.0 0.8 ± 0.0 5 0.8 0.5 2.5 ± 0.2 zFeatures 1) Surface mounting type (TUMD2) 2) Very fast recovery. 3) High reliability. 1.3 ± 0.05 0.6 ± 0 .2 0 .1 zStructure Silicon epitaxial planar TUMD2 ROHM : TUMD2 zStructure zTaping dimensions (Unit : mm) 8.0±0.2 2.75 4.0±0.1 1.43±0.05 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg φ1.0±0.2 0 2.8±0.05 0.25±0.05 1.75±0.1 φ1.55±0.1 0 2.0±0.05 3.5±0.05 4.0±0.1 0.9±0.08 Limits 100 100 0.5 5 150 -55 to +150 Unit V V A A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Conditions Forward voltage Symbol VF Min. - Typ. - Max. 0.98 Unit V IF=0.5A Reverse current IR - - 10 Reverse recovery time trr - - 25 µA nA IF=100V IF=0.5A, IR=1.0A, Irr=0.25∗IR 1/3 RF051VA1S Diodes zElectrical characteristic curves Ta=25℃ 0.1 Ta=125℃ Ta=-25℃ Ta=150℃ 0.01 Ta=150℃ 100000 Ta=125℃ 10000 Ta=75℃ REVERSE CURRENT:IR(nA) Ta=75℃ 1000 Ta=25℃ 100 Ta=-25℃ 10 1 0.001 0 200 400 600 800 1000 0 1200 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 40 60 80 1 100 0 890 880 AVE:880.2mV 870 900 Ta=25℃ VR=100V n=30pcs 800 700 600 500 400 300 AVE:147.6nA 200 860 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 900 30 8.3ms 25 20 15 10 AVE:11.6A 5 RESERVE RECOVERY TIME:trr(us) 1cyc Ifsm 6 5 4 3 2 1 0 0 AVE:3.13pF Ct DISPERSION MAP 1000 30 45 35 7 IR DISPERSION MAP 50 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 AVE:5.30ns 5 Ifsm 100 0 0 30 Ta=25℃ f=1MHz VR=0V n=10pcs 8 100 VF DISPERSION MAP 40 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 1000 Ta=25℃ IF=0.5A n=30pcs REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 910 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz f=1MHz PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) 10 1000000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 8.3ms 8.3ms 1cyc 10 1 1 trr DISPERSION MAP IFSM DISRESION MAP 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1000 1 1000 t 100 10 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board 10 IM=1mA DC 0.8 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1素子当たり Ifsm IF=10mA D=1/2 0.6 Sin(θ＝180) 0.4 0.2 1ms tim 300us 1 0.001 0 0.01 0.1 1 10 TIME:t(ms) Rth-t CHARACTERISTICS 100 1000 0 0.5 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2/3 RF051VA1S Diodes 1.5 1.5 Per chip AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) Per chip REVERSE POWER DISSIPATION:PR (W) 0.04 0.03 Sin(θ＝180) D=1/2 0.02 DC 0.01 0 1 0A 0V t DC D=1/2 T VR D=t/T VR=50V Tj=150℃ 0.5 Sin(θ＝180) 20 40 60 80 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 100 1 Io t T DC VR D=t/T VR=50V Tj=150℃ D=1/2 0.5 Sin(θ＝180) 0 0 0 0A 0V Per chip Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.05 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) ELECTROSTATIC DDISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 10 AVE:4.40kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1