RB160A90 Diodes Schottky barrier diode RB160A90 zApplications General rectification z Dimensions (Unit : mm) CATHODE BAND 8 φ0.6±0.1 ① ② zFeatures 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low IR. 4) High ESD. 3.0±0.2 29±1 29±1 φ2.5±0.2 ROHM : MSR ① zConstruction Silicon epitaxial planar ② Manufacture Date z Taping specifications (Unit : mm) BROWN H2 A Symbol BLUE E Standard dimension value(mm) T-31 52.4±1.5 +0.4 T-32 26.0 0 T-31 5.0±0.5 B T-31 5.0±0.3 T-31 C 1.0 max. T-32 T-31 D 0 T-32 T-31 1/2A±1.2 E T-32 1/2A±0.4 T-31 ±0.7 Ｆ T-32 0.2 max. T-31 H1 6.0±0.5 T-32 T-31 H2 5.0±0.5 T-32 T-31 1.5 max. |L1-L2| T-32 0.4 max. ＊H1(6mm)：BROWN Ａ B C L2 L1 F H1 D zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （t=100µs） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg (*1) Mounted on epoxy board. 180°Half sine wave Limits 90 90 1 50 150 -55 to +150 Unit V V A A ℃ ℃ zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current ESD break down voltage Symbol VF IR ESD Min. 0.54 5 Typ. 0.64 5.00 - Max. 0.73 100 - Unit V µA kV Conditions IF=1.0A VR=90V C=100pF,R=1.5kΩ forward and reverse : 1 time Rev.D 1/3 RB160A90 Diodes zElectrical characteristic curves (Ta=25°C) Ta=150℃ Ta=125℃ 1 1000 10000 条件：f=1MHz f=1MHz Ta=25℃ Ta=150℃ Ta=-25℃ 0.01 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 100 200 300 400 500 600 10 20 30 40 50 60 70 80 90 0 650 630 620 AVE:632.1mV 610 Ta=25℃ Ta=25℃ VR=90V VR=100V n=30pcs n=30pcs 90 REVERSE CURRENT:IR(uA) 640 80 70 60 50 40 30 AVE:478.3nA σ:36.1612nA 20 AVE:4.655uA 170 160 150 140 130 120 100 100 50 AVE:56.0A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 AVE:7.40ns 10 5 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) 8.3ms 1cyc 50 1 trr DISPERSION MAP IFSM DISRESION MAP 1000 150 100 50 0 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 100 IF=0.5A IM=1mA 100 Rth(j-l) time(ms) Rth(j-a) td=300us Rth(j-c) 10 1 0.001 1.5 FORWARD POWER DISSIPATION:Pf(W) t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 2 Mounted on epoxy board 1 8.3ms 8.3ms 0 0 0 0.1 AVE:149.6pF Ct DISPERSION MAP 30 150 30 Ta=25℃ f=1MHz VR=0V n=10pcs 180 IR DISPERSION MAP 1cyc 25 100 VF DISPERSION MAP Ifsm 20 110 0 200 15 190 10 600 10 200 100 Ta=25℃ IF=1A n=30pcs 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) 10 1 0 700 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 0.01 0.001 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 0.1 1000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=75℃ D=1/2 1 DC Sin(θ＝180) 0.5 0 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.D 2 2/3 RB160A90 Diodes 1 3 0.6 DC D=1/2 0.4 0.2 2.5 t 2 DC T VR D=t/T VR=45V Tj=150℃ 1.5 D=1/2 1 Sin(θ＝180) 0.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.8 3 Io 0A 0V Io 0A 0V 2.5 t 2 DC T VR D=t/T VR=45V Tj=150℃ 1.5 D=1/2 1 Sin(θ＝180) 0.5 Sin(θ＝180) 0 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 90 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 AVE:10.7kV 15 10 AVE:1.70kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.D 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1