ROHM BD9152MUV-E2

Single-chip Type with Built-in FET Switching Regulator Series
Output 1.5A or Less High Efficiency
Step-down Switching Regulator
with Built-in Power MOSFET
BD9152MUV
No.10027ECT14
●Description
ROHM’s high efficiency dual step-down switching regulator BD9152MUV is a power supply designed to produce a low
voltage including 3.3,0.8 volts from 5.5/4.5 volts power supply line. Offers high efficiency with our original pulse skip control
technology and synchronous rectifier. Employs a current mode control system to provide faster transient response to
sudden change in load.
●Features
1) Offers fast transient response with current mode PWM control system.
2) Offers highly efficiency for all load range with synchronous rectifier (Pch/Nch FET)
TM
and SLLM (Simple Light Load Mode)
3) Incorporates soft-start function.
4) Incorporates thermal protection and ULVO functions.
5) Incorporates short-current protection circuit with time delay function.
6) Incorporates shutdown function Icc=0μA(Typ.)
7) Employs small surface mount package : VQFN020V4040
●Application
Power supply for LSI including DSP, Micro computer and ASIC
●Absolute Maximum Rating (Ta=25℃)
Parameter
Vcc Voltage
EN Voltage
SW Voltage
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
*1
*2
*3
*4
*5
Symbol
VCC
VEN1
VEN2
VSW1
VSW2
Pd1
Pd2
Pd3
Pd4
Topr
Tstg
Tjmax
Limit
-0.3~+7 *1
-0.3~+7
-0.3~+7
-0.3~+7
-0.3~+7
2
0.34*
0.70 *3
1.21 *4
3.56*5
-40~+85
-55~+150
+150
Unit
V
V
V
V
V
W
W
W
W
℃
℃
℃
Pd should not be exceeded.
IC only
1-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 10.29mm2
4-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 10.29mm2 , in each layers
4-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 5505mm2, in each layers
●Operating Conditions (Ta=-40~+105℃)
Parameter
Vcc Voltage
EN Voltage
Output Voltage range
SW Average Output Current
*6
Symbol
Min.
4.5
0
0
0.8
-
VCC
VEN1
VEN2
VOUT2
ISW1
ISW2
Limit
Typ.
5.0
-
Max.
5.5
5.5
5.5
2.5
1.5*6
1.5*6
Unit
V
V
V
V
A
A
Pd and ASO should not be exceeded.
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○
1/16
2010.04 - Rev.C
Technical Note
BD9152MUV
●Electrical Characteristics
◎(Ta=25℃ VCC=5V, EN1=EN2=VCC ,unless otherwise specified.)
Parameter
Symbol
Min.
Limit
Typ.
Max.
Unit
Condition
Standby Current
ISTB
-
0
10
μA
Bias Current
ICC
-
500
800
μA
EN Low Voltage
VENL
-
GND
0.8
V
Standby Mode
EN High Voltage
VENH
2
Vcc
-
V
Active Mode
EN Input Current
IEN
-
1
10
μA
EN1=EN2=2V
FOSC
0.8
1.0
1.2
MHz
RONP1
-
0.17
0.3
Ω
Vcc=5V
RONP2
-
0.17
0.3
Ω
Vcc=5V
RONN1
-
0.13
0.2
Ω
Vcc=5V
RONN2
-
0.13
0.2
Ω
Vcc=5V
FB1
3.25
3.3
3.35
V
±1.5%
FB2
0.788
0.8
0.812
V
±1.5%
UVLO Threshold Voltage1
VUVLOL1
3.6
3.8
4.0
V
Vcc=5→0V
UVLO Release Voltage1
VUVLOH1
3.65
3.9
4.2
V
Vcc=0→5V
UVLO Threshold Voltage2
VUVLOL2
2.4
2.5
2.6
V
Vcc=5→0V
UVLO Release Voltage2
VUVLOH2
2.425
2.55
2.7
V
Vcc=0→5V
RFB1
-
20
40
Ω
Vcc=5V
TSS
0.4
0.8
1.6
ms
TLATCH
1.0
2.0
4.0
ms
SCP/TSD ON
VSCP1
-
1.65
2.4
V
FB1=3.3→0V
VSCP2
-
0.4
0.56
V
FB2=0.8→0V
Oscillation Frequency
Pch FET ON Resistance
Nch FET ON Resistance
FB Reference Voltage
FB1 Discharge Resistance
Soft Start Time
Timer Latch Time
Output Short circuit Threshold Voltage
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2/16
EN1=EN2=0V
2010.04 - Rev.C
Technical Note
BD9152MUV
●Block Diagram, Application Circuit
【BD9152MUV】
PVCC
FB1
Current
Comp
4.0±0.1
4.0±0.1
EN1
Current
R
Gm Amp
Q
D9152
Slope1
EN1
AGND
SW1
+
Soft
Start1
Driver
Logic
Lot No.
ITH1
1.0Max.
Sense/
Protect
S
PGND1
SCP1
S
C0.2 2.1±0.1
16
10
0.5
CLK2
UVLO1
UVLO2
PVCC
Current
Current
Comp
R
Gm Amp
FB2
11
Q
S
Soft
Start2
EN2
(Unit : mm)
Driver
CLK2
Logic
Function
PGND2
AGND
Fig.2 BD9152MUV Block Diagram
Pin
No.
Pin
name
1
PGND2
Ch2 Lowside source pin
11
ITH1
2
3
4
PVcc
PVcc
PVcc
Highside FET source pin
Highside FET source pin
Highside FET source pin
12
13
14
AGND
N.C.
AVcc
5
PGND1
Ch1 Lowside source pin
15
ITH2
6
7
8
9
10
PGND1
SW1
SW1
EN1
FB1
Ch1 Lowside source pin
Ch1 Pch/Nch FET drain output pin
Ch1 Pch/Nch FET drain output pin
Ch1 Enable pin(High Active)
Ch1 output voltage detect pin
16
17
18
19
20
FB2
EN2
SW2
SW2
PGND2
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SW2
ITH2
Fig.1 BD9152MUV TOP View
c 2010 ROHM Co., Ltd. All rights reserved.
○
Sense/
Protect
+
Slope2
0.25 +0.05
-0.04
●Pin No. & function table
Pin
Pin
No.
name
SCP/
TSD
SCP2
6
15
OSC
5
20
1.0
VREF
2.1±0.1
0.4±0.1
1
CLK1
0.02 +0.03
-0.02
(0.22)
0.08 S
3/16
Function
Ch1 GmAmp output pin/
Connected phase compensation capacitor
Ground
Non Connection
VCC power supply input pin
Ch1 GmAmp output pin/Connected phase
compensation capacitor
Ch2 output voltage detect pin
Ch2 Enable pin(High Active)
Ch2 Pch/Nch FET drain output pin
Ch2 Pch/Nch FET drain output pin
Ch2 Lowside source pin
2010.04 - Rev.C
Technical Note
BD9152MUV
●Characteristics data
3.5
Ta=25℃
Io=1.5A
3.0
OUTPUT VOLTAGE:VOUT[V]
OUTPUT VOLTAGE:VOUT[V]
3.0
【VOUT1=3.3V】
2.5
2.0
3.5
【VOUT2=1.2V】
1.5
1.0
0.5
2.5
2.0
【VOUT2=1.2V】
1.5
VCC=5V
Ta=25℃
Io=0A
1.0
0.5
0
1
2
3
4
INPUT VOLTAGE:VCC[V]
0
5
1
2
3
4
1.0
0
3.30
VCC=5V
Io=0A
3.20
0
20
40
60
TEMPERATURE:Ta[℃]
1.23
1.20
1.18
80
VCC=5V
Io=0A
90
【VOUT1=3.3V】
80
【VOUT2=2.5V】
70
60
40
20
-20
0
20
40
60
TEMPERATURE:Ta[℃]
80
0.6
0.4
VCC=5V
200
1
0.9
0.8
Ta=25℃
60
TEMPERATURE:Ta[℃]
Fig.9 Ta- Fosc
4.75
5
5.25
INPUT VOLTAGE:VCC[V]
5.5
125
100
NMOS
75
50
-40
-20
0
20
40
60
80
TEMPERATURE:Ta[℃]
100
600
1.6
1.4
1.2
1.0
0.8
0.6
VCC=5V
0.4
CIRCUIT CURRENT:ICC[μA]
1.8
EN VOLTAGE:VEN[V]
150
Fig.11 Ta – RONN, RONP
Fig.10 VCC-Fosc
2.0
PMOS
0
4.5
80
VCC=5V
25
0.7
0.0
10000
Fig.8 Efficiency
ON RESISTANCE:RON[mΩ]
FREQUENCY:FOSC[MHz]
FREQUENCY:FOSC[MHz]
0.8
40
【VOUT2=1.0V
】
100
1000
OUTPUT CURRENT:IOUT[mA]
10
175
1.0
20
VCC=5V
Ta=25℃
10
1.1
0
【VOUT2=1.2V】
30
Fig. 7 Ta-VOUT2
Fig. 6 Ta-VOUT1
-20
【VOUT2=1.5V】
50
0
-40
1.2
4
100
【VOUT2=1.2V】
【VOUT2=1.2V
設定】
1.15
-40
1
2
3
OUTPUT CURRENT:IOUT [A]
Fig.5 IOUT - VOUT
EFFICIENCY:η[%]
OUTPUT VOLTAGE:VOUT[V]
3.35
0.2
VCC=5V
Ta=25℃
0.5
5
1.25
【VOUT1=3.3V】
-20
【VOUT2=1.2V】
1.5
Fig.4 VEN - VOUT
3.40
-40
2.0
EN VOLTAGE:VEN[V]
Fig.3 VCC – VOUT1,VOUT2
3.25
【VOUT1=3.3V】
2.5
0.0
0.0
0.0
OUTPUT VOLTAGE:VOUT[V]
3.0
【VOUT1=3.3V】
OUTPUT VOLTAGE:VOUT[V]
3.5
VCC=5V,Ta=25℃
500
400
EN1=E2
300
VOUT1
200
VCC=5V
VOUT2
100
0.2
0
0.0
-40
-20
0
20
40
60
80
TEMPERATURE:Ta[℃]
Fig.12 Ta-EN1,EN2
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○
-40
-20
0
20
40
60
80
TEMPERATURE:Ta[℃]
Fig.13 Ta-Icc
4/16
Fig.14 Soft start wave form
(Io=0mA)
2010.04 - Rev.C
Technical Note
BD9152MUV
●Characteristics data
VCC=5V,Ta=25℃
VCC=5V,Ta=25℃
VCC=5V,Ta=25℃
SW1
SW1
VOUT1
VOUT1
EN1=E2
VOUT1
VOUT2
Fig.15 Soft start wave form
(Io=1.5A)
Fig.16 SW1 wave form
(Io=0mA)
VCC=5V,Ta=25℃,VOUT2=1.2V
VCC=5V,Ta=25℃,VOUT2=1.2V
VOUT1
VOUT2
IOUT1
Fig.19 SW2 wave form
(Io=1.5A)
VCC=5V,Ta=25℃
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○
VCC=5V,Ta=25℃
SW2
Fig.18 SW2 wave form
(Io=0mA)
Fig.21 VOUT1 transient responce
(Io1.5A→0.5A/ usec)
Fig.17 SW1 wave form
(Io=1.5A)
Fig.20 VOUT1 transient responce
(Io0.5A→1.5A / usec)
VCC=5V,Ta=25℃,VOUT2=1.2V
VCC=5V,Ta=25℃,VOUT2=1.2V
VOUT2
VOUT2
IOUT2
IOUT2
Fig.22 VOUT2 transient responce
(Io0.5A→1.5A/ usec)
5/16
Fig.23 VOUT2 transient responce
(Io1.5A→0.5A/ usec)
2010.04 - Rev.C
Technical Note
BD9152MUV
●Information on advantages
Advantage 1:Offers fast transient response with current mode control system.
Conventional product (Load response IO=0.5A→1.5A)
BD9152MUV (Load response IO=1.5A→0.5A)
VOUT1
VOUT1
IOUT
IOUT
Fig.24 Transient response
Advantage 2: Offers high efficiency for all load range.
・For lighter load:
Utilizes the current mode control mode called SLLM for lighter load, which reduces various dissipation such as switching
dissipation (PSW), gate charge/discharge dissipation, ESR dissipation of output capacitor (PESR) and on-resistance
dissipation (PRON) that may otherwise cause degradation in efficiency for lighter load.
Achieves efficiency improvement for lighter load.
・For heavier load:
Utilizes the synchronous rectifying mode and the low on-resistance MOS FETs incorporated as power transistor.
ON resistance of Highside MOS FET : 170mΩ(Typ.)
ON resistance of Lowside MOS FET : 130mΩ(Typ.)
Efficiency η[%]
100
Achieves efficiency improvement for heavier load.
SLLM
②
50
①
PWM
①inprovement by SLLM system
②improvement by synchronous rectifier
0
0.001
Offers high efficiency for all load range with the improvements mentioned above.
0.01
0.1
Output current Io[A]
1
Fig.25 Efficiency
Advantage 3:・Supplied in smaller package due to small-sized power MOS FET incorporated.
・Output capacitor Co required for current mode control: 22μF ceramic capacitor
・Inductance L required for the operating frequency of 1 MHz: 2.2μH inductor
・Incorporates FET + Boot strap diode
Reduces a mounting area required.
VOUT1
L1
FB1
ITH1
RITH1
EN1
SW1
SW1
PGND1
AGND
PVcc
PVcc
AVcc
PVcc
ITH2
FB2
COUT1
COUT2
CIN1
PGND1
N.C.
RITH2
20mm
COUT1
CIN1
15mm
CIN2
PGND2
EN2 SW2 SW2 PGND2
L1
COUT2
R1
L2
RITH1 RITH2
R2
CITH1 CITH2
VOUT2
L2
R2
R1
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○
Fig.26 Example application
6/16
2010.04 - Rev.C
Technical Note
BD9152MUV
●Operation
BD9152MUV is a synchronous rectifying step-down switching regulator that achieves faster transient response by employing
current mode PWM control system. It utilizes switching operation in PWM (Pulse Width Modulation) mode for heavier load,
while it utilizes SLLM (Simple Light Load Mode) operation for lighter load to improve efficiency.
○Synchronous rectifier
It does not require the power to be dissipated by a rectifier externally connected to a conventional DC/DC converter IC,
and its P.N junction shoot-through protection circuit limits the shoot-through current during operation, by which the power
dissipation of the set is reduced.
○Current mode PWM control
Synthesizes a PWM control signal with a inductor current feedback loop added to the voltage feedback.
・PWM (Pulse Width Modulation) control
The oscillation frequency for PWM is 1 MHz. SET signal form OSC turns ON a highside MOS FET (while a lowside MOS
FET is turned OFF), and an inductor current IL increases. The current comparator (Current Comp) receives two signals,
a current feedback control signal (SENSE: Voltage converted from IL) and a voltage feedback control signal (FB), and
issues a RESET signal if both input signals are identical to each other, and turns OFF the highside MOS FET (while a
lowside MOS FET is turned ON) for the rest of the fixed period. The PWM control repeat this operation.
・SLLM (Simple Light Load Mode) control
When the control mode is shifted from PWM for heavier load to the one for lighter load or vise versa, the switching pulse is
designed to turn OFF with the device held operated in normal PWM control loop, which allows linear operation without
voltage drop or deterioration in transient response during the mode switching from light load to heavy load or vise versa.
Although the PWM control loop continues to operate with a SET signal from OSC and a RESET signal from Current Comp,
it is so designed that the RESET signal is held issued if shifted to the light load mode, with which the switching is tuned
OFF and the switching pulses are thinned out under control. Activating the switching intermittently reduces the switching
dissipation and improves the efficiency.
SENSE
Current
Comp
RESET
VOUT
Level
Shift
R Q
FB
SET
Gm Amp.
ITH
IL
Driver
Logic
S
VOUT
SW
Load
OSC
Fig.27 Diagram of current mode PWM control
PVCC
Current
Comp
SENSE
PVCC
SENSE
Current
Comp
FB
FB
SET
GND
SET
GND
RESET
GND
RESET
GND
SW
GND
SW
IL
GND
IL(AVE)
IL
0A
VOUT
VOUT
VOUT(AVE)
VOUT(AVE)
Not switching
Fig.28 PWM switching timing chart
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○
Fig.29 SLLM
7/16
TM
switching timing chart
2010.04 - Rev.C
Technical Note
BD9152MUV
●Description of operations
・Soft-start function
EN terminal shifted to “High” activates a soft-starter to gradually establish the output voltage with the current limited during
startup, by which it is possible to prevent an overshoot of output voltage and an inrush current.
・Shutdown function
With EN terminal shifted to “Low”, the device turns to Standby Mode, and all the function blocks including reference
voltage circuit, internal oscillator and drivers are turned to OFF. Circuit current during standby is 0µF (Typ.).
・UVLO function
Detects whether the input voltage sufficient to secure the output voltage of this IC is supplied.
And the hysteresis width of 50mV (Typ.) is provided to prevent output chattering.
Each the outputs have UVLO. It is possible to set output sequence easy.
Hysteresis
100mV
VCC
Hysteresis
50mV
EN1,2
VOUT1
TSS
discharge ON
VOUT2
Natural discharge
discharge ON
Ch1
Standby mode
Ch2
Standby mode
Ch1, Ch2
Operating mode
UVLO2 UVLO1
Ch1 : standby mode
Ch2 : Operating mode
UVLO1
TSS
Natural discharge
TSS
Ch1
Standby mode
Standby mode
Ch1, Ch2
Operating mode
UVLO1 UVLO2
discharge ON
Natural discharge
TSS
TSS
Ch1, Ch2
Standby mode
TSS
discharge ON
EN
Ch1, Ch2
Operating mode
EN
Ch2
Standby mode
UVLO1 UVLO2
Fig.30 Soft start, Shutdown, UVLO timing chart
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8/16
2010.04 - Rev.C
Technical Note
BD9152MUV
・Short-current protection circuit with time delay function
Turns OFF the output to protect the IC from breakdown when the incorporated current limiter is activated continuously for
the fixed time(TLATCH) or more. The output thus held tuned OFF may be recovered by restarting EN or by re-unlocking
UVLO.
EN1=EN2
Output Short circuit
Threshold Voltage
Output OFF
Latch
VOUT2
IL Limit
IL1
t2=TLATCH
t1<TLATCH
Operating mode
Standby
mode
Standby
mode
Timer latch
EN
Operating mode
EN
Fig.31 Short-current protection circuit with time delay timing chart
●Switching regulator efficiency
Efficiency ŋ may be expressed by the equation shown below:
η=
VOUT×IOUT
Vin×Iin
×100[%]=
POUT
Pin
×100[%]=
POUT
POUT+PDα
×100[%]
Efficiency may be improved by reducing the switching regulator power dissipation factors PDα as follows:
Dissipation factors:
2
1) ON resistance dissipation of inductor and FET:PD(I R)
2) Gate charge/discharge dissipation:PD(Gate)
3) Switching dissipation:PD(SW)
4) ESR dissipation of capacitor:PD(ESR)
5) Operating current dissipation of IC:PD(IC)
2
2
1)PD(I R)=IOUT ×(RCOIL+RON) (RCOIL[Ω]:DC resistance of inductor, RON[Ω]:ON resistance of FET, IOUT[A]:Output
current.)
2)PD(Gate)=Cgs×f×V (Cgs[F]:Gate capacitance of FET, f[H]:Switching frequency, V[V]:Gate driving voltage of FET)
3)PD(SW)=
2
Vin ×CRSS×IOUT×f
IDRIVE
(CRSS[F]:Reverse transfer capacitance of FET, IDRIVE[A]:Peak current of gate.)
2
4)PD(ESR)=IRMS ×ESR (IRMS[A]:Ripple current of capacitor, ESR[Ω]:Equivalent series resistance.)
5)PD(IC)=Vin×ICC (ICC[A]:Circuit current.)
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9/16
2010.04 - Rev.C
Technical Note
BD9152MUV
●Consideration on permissible dissipation and heat generation
As this IC functions with high efficiency without significant heat generation in most applications, no special consideration is
needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lower input
voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat generation
must be carefully considered.
For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered.
Because the conduction losses are considered to play the leading role among other dissipation mentioned above including
gate charge/discharge dissipation and switching dissipation.
4.5
2
① 4 layers (copper foil area : 5505mm )
(copper foil in each layers)
θj-a=35.1℃/W
2
② 4 layers (copper foil area : 10.29mm )
(copper foil in each layers)
θj-a=103.3℃/W
2
③ 1 layer (copper foil area : 0mm )
θj-a=178.6℃/W
④IC only
θj-a=367.6℃/W
4.0
Power dissipation : Pd [W]
①3.56W
3.0
2
P=IOUT ×RON
RON=D×RONP+(1-D)RONN
D:ON duty (=VOUT/VCC)
RONH:ON resistance of Highside MOS FET
RONL:ON resistance of Lowside MOS FET
IOUT:Output current
2.0
②1.21W
1.0
③0.70W
④0.34W
0
0
25
50
75
100 105
125
150
Ambient temperature :Ta [℃]
Fig.32 Thermal derating curve (VQFN020V4040)
(Example) VCC=5V, VOUT1=3.3V, VOUT2=1.2V, RONH=170mΩ, RONL=130mΩ
IOUT=1.5A, for example,
D1=VOUT1/VCC=3.3/5=0.66
D2=VOUT2/VCC=1.2/5=0.24
RON1=0.66×0.170+(1-0.66)×0.130
=0.1122+0.0442
=0.1564[Ω]
RON2=0.24×0.170+(1-0.24)×0.130
=0.0408+0.0988
=0.1397[Ω]
P=1.52×0.1564+1.52×0.1397=0.666[W]
As RONH is greater than RONL in this IC, the dissipation increases as the ON duty becomes greater.
With the consideration on the dissipation as above, thermal design must be carried out with sufficient margin allowed.
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10/16
2010.04 - Rev.C
Technical Note
BD9152MUV
●Selection of components externally connected
1. Selection of inductor (L)
IL
The inductance significantly depends on output ripple current.
As seen in the equation (1), the ripple current decreases as the
inductor and/or switching frequency increases.
(VCC-VOUT)×VOUT
[A]・・・(1)
ΔIL=
L×VCC×f
ΔIL
VCC
IL
Appropriate ripple current at output should be 20% more or less of the
maximum output current.
VOUT
L
ΔIL=0.2×IOUTmax. [A]・・・(2)
Co
L=
Fig.33 Output ripple current
(VCC-VOUT)×VOUT
ΔIL×VCC×f
[H]・・・(3)
(ΔIL: Output ripple current, and f: Switching frequency)
※Current exceeding the current rating of the inductor results in magnetic saturation of the inductor, which decreases efficiency.
The inductor must be selected allowing sufficient margin with which the peak current may not exceed its current rating.
If VCC=5.0V, VOUT=1.2V, f=1.0MHz, ΔIL=0.3×1.5A=0.45A, for example,(BD9152MUV)
(5-1.2)×1.2
L=
0.45×5×1.0M =2.02μ → 2.2[μH]
※Select the inductor of low resistance component (such as DCR and ACR) to minimize dissipation in the inductor for
better efficiency.
2. Selection of output capacitor (CO)
VCC
Output capacitor should be selected with the consideration on the stability region
and the equivalent series resistance required to smooth ripple voltage.
Output ripple voltage is determined by the equation (4):
VOUT
L
ESR
ΔVOUT=ΔIL×ESR [V]・・・(4)
Co
(ΔIL: Output ripple current, ESR: Equivalent series resistance of output capacitor)
※Rating of the capacitor should be determined allowing sufficient margin against
output voltage. A 22μF to 100μF ceramic capacitor is recommended.
Less ESR allows reduction in output ripple voltage.
Fig.34 Output capacitor
3. Selection of input capacitor (Cin)
VCC
Input capacitor to select must be a low ESR capacitor of the capacitance
sufficient to cope with high ripple current to prevent high transient voltage.
The ripple current IRMS is given by the equation (5):
Cin
VOUT
L
Co
IRMS=IOUT×
√VOUT(VCC-VOUT)
VCC
[A]・・・(5)
< Worst case > IRMS(max.)
When Vcc=2×VOUT, IRMS=
Fig.35 Input capacitor
IOUT
2
If VCC=5.0V, VOUT=1.8V, and IOUTmax.=1.5A, (BD9152MUV)
IRMS=2×
√1.8(5.0-1.8)
=0.48[ARMS]
5.0
A low ESR 22μF/10V ceramic capacitor is recommended to reduce ESR dissipation of input capacitor for better efficiency.
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11/16
2010.04 - Rev.C
Technical Note
BD9152MUV
4. Determination of RITH, CITH that works as a phase compensator
As the Current Mode Control is designed to limit a inductor current, a pole (phase lag) appears in the low frequency area
due to a CR filter consisting of a output capacitor and a load resistance, while a zero (phase lead) appears in the high
frequency area due to the output capacitor and its ESR. So, the phases are easily compensated by adding a zero to the
power amplifier output with C and R as described below to cancel a pole at the power amplifier.
fp(Min.)
1
2π×RO×CO
1
fz(ESR)=
2π×ESR×CO
A
fp=
fp(Max.)
Gain
[dB]
0
fz(ESR)
IOUTMin.
Phase
[deg]
IOUTMax.
Pole at power amplifier
When the output current decreases, the load resistance Ro
increases and the pole frequency lowers.
0
-90
fp(Min.)=
1
[Hz]←with lighter load
2π×ROMax.×CO
fp(Max.)=
1
2π×ROMin.×CO
Fig.36 Open loop gain characteristics
A
[Hz] ←with heavier load
fz(Amp.)
Zero at power amplifier
Increasing capacitance of the output capacitor lowers the pole
frequency while the zero frequency does not change. (This
is because when the capacitance is doubled, the capacitor
ESR reduces to half.)
Gain
[dB]
0
0
Phase
[deg]
-90
fz(Amp.)=
1
2π×RITH×CITH
Fig.37 Error amp phase compensation characteristics
VOUT1
L1
FB1
EN1
SW1
SW1
ITH1
RITH1
CITH1
RITH2
CITH2
PGND1
RO1
PGND1
AGND
PVcc
N.C.
PVcc
AVcc
PVcc
ITH2
PGND2
FB2
ESR
COUT1
EN2 SW2 SW2 PGND2
CIN1
CIN2
COUT2
VOUT2
L2
R2
RO2
R1
Fig.38 Typical application
Stable feedback loop may be achieved by canceling the pole fp (Min.) produced by the output capacitor and the load resistance
with CR zero correction by the error amplifier.
fz(Amp.)= fp(Min.)
1
2π×RITH×CITH
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○
=
1
2π×ROMax.×CO
12/16
2010.04 - Rev.C
Technical Note
BD9152MUV
5. Determination of VOUT2 output voltage
The output voltage VOUT2 is determined by the equation (6):
VOUT2=(R2/R1+1)×VFB2・・・(6) VFB2: Voltage at ADJ terminal (0.8V Typ.)
With R1 and R2 adjusted, the output voltage may be determined as required.
L2
VOUT2
SW2
FB2
Adjustable output voltage range : 0.8V~2.5V
Cout2
R2
R1
Fig.39 Determination of output voltage
Use 1 kΩ~100 kΩ resistor for R1. If a resistor of the resistance higher than 100 kΩ is used, check the assembled set
carefully for ripple voltage etc.
●BD9152MUV
Cautions on PC Board layout
VOUT1
L1
FB1 EN1 SW1 SW1 PGND1
ITH1
RITH1
CITH1
RITH2
CITH2
COUT1
PGND1
AGND
PVcc
N.C.
PVcc
AVcc
PVcc
ITH2
PGND2
FB2
EN2 SW2 SW2 PGND2
CIN1
CIN2
COUT2
VOUT2
L2
R2
R1
Fig.40 Layout diagram
①
②
Lay out the input ceramic capacitor CIN closer to the pins PVCC and PGND, and the output capacitor Co closer to the
pin PGND.
Lay out CITH and RITH between the pins ITH and GND as neat as possible with least necessary wiring.
※
VQFN020V4040 (BD9152MUV) has thermal PAD on the reverse of the package.
The package thermal performance may be enhanced by bonding the PAD to GND plane which take a large area of
PCB.
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13/16
2010.04 - Rev.C
Technical Note
BD9152MUV
●Recommended components Lists on above application
Symbol
Part
Value
Manufacturer
Series
Coil
2.2uH
TDK
LTF5022-2R2N3R2
CIN1,CIN2
Ceramic capacitor
22uF
Murata
GRM32EB11A226KE20
Cout1,Cout2
Ceramic capacitor
22uF
Murata
GRM31CB30J226KE18
CITH1
Ceramic capacitor
680pF
Murata
GRM18 Series
RITH1
Resistance
82kΩ
Rohm
MCR03 Series
L1,2
CITH2
RITH2
Ceramic capacitor
Resistance
VOUT2=0.8V
680pF
Murata
GRM18 Series
VOUT2=1.0V
680pF
Murata
GRM18 Series
VOUT2=1.2V
680pF
Murata
GRM18 Series
VOUT2=1.5V
VOUT2=1.8V
VOUT2=2.5V
VOUT2=0.8V
VOUT2=1.0V
VOUT2=1.2V
VOUT2=1.5V
VOUT2=1.8V
VOUT2=2.5V
680pF
680pF
680pF
12kΩ
12kΩ
15kΩ
15kΩ
33kΩ
82kΩ
Murata
Murata
Murata
Rohm
Rohm
Rohm
Rohm
Rohm
Rohm
GRM18 Series
GRM18 Series
GRM18 Series
MCR03 Series
MCR03 Series
MCR03 Series
MCR03 Series
MCR03 Series
MCR03 Series
※The parts list presented above is an example of recommended parts. Although the parts are sound, actual circuit
characteristics should be checked on your application carefully before use. Be sure to allow sufficient margins to
accommodate variations between external devices and this IC when employing the depicted circuit with other circuit
constants modified. Both static and transient characteristics should be considered in establishing these margins. When
switching noise is substantial and may impact the system, a low pass filter should be inserted between the VCC and
PVCC pins, and a schottky barrier diode or snubber established between the SW and PGND pins.
●I/O equivalence circuit
・EN1,EN2 pin
・SW1,SW2
PVCC
PVCC
PVCC
EN1,EN2
SW1,SW2
・FB1,FB2 pin
・ITH1,ITH2 pin
AVCC
FB1,FB2
ITH1,ITH2
Fig.41 I/O equivalence circuit
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14/16
2010.04 - Rev.C
Technical Note
BD9152MUV
●Notes for use
1. Absolute Maximum Ratings
While utmost care is taken to quality control of this product, any application that may exceed some of the absolute
maximum ratings including the voltage applied and the operating temperature range may result in breakage. If broken,
short-mode or open-mode may not be identified. So if it is expected to encounter with special mode that may exceed the
absolute maximum ratings, it is requested to take necessary safety measures physically including insertion of fuses.
2. Electrical potential at GND
GND must be designed to have the lowest electrical potential In any operating conditions.
3. Short-circuiting between terminals, and mismounting
When mounting to pc board, care must be taken to avoid mistake in its orientation and alignment. Failure to do so may
result in IC breakdown. Short-circuiting due to foreign matters entered between output terminals, or between output and
power supply or GND may also cause breakdown.
4. Thermal shutdown protection circuit
Thermal shutdown protection circuit is the circuit designed to isolate the IC from thermal runaway, and not intended to
protect and guarantee the IC. So, the IC the thermal shutdown protection circuit of which is once activated should not be
used thereafter for any operation originally intended.
5. Inspection with the IC set to a pc board
If a capacitor must be connected to the pin of lower impedance during inspection with the IC set to a pc board, the
capacitor must be discharged after each process to avoid stress to the IC. For electrostatic protection, provide proper
grounding to assembling processes with special care taken in handling and storage. When connecting to jigs in the
inspection process, be sure to turn OFF the power supply before it is connected and removed.
6. Input to IC terminals
This is a monolithic IC with P+ isolation between P-substrate and each element as illustrated below. This P-layer and the
N-layer of each element form a P-N junction, and various parasitic element are formed.
If a resistor is joined to a transistor terminal as shown in Fig 42.
○P-N junction works as a parasitic diode if the following relationship is satisfied;
GND>Terminal A (at resistor side), or GND>Terminal B (at transistor side); and
○if GND>Terminal B (at NPN transistor side),
a parasitic NPN transistor is activated by N-layer of other element adjacent to the above-mentioned parasitic diode.
The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among circuits,
and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in such
manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in
activation of parasitic elements.
Resistor
Transistor (NPN)
Pin A
C
Pin B
B
E
Pin A
N
P+
N
P+
P
N
Parasitic
element
N
P
+
B
N
P
P substrate
Parasitic element
GND
P
C
+
N
E
Parasitic
element
P substrate
Parasitic element
GND
GND
GND
Other adjacent elements
Fig.42 Simplified structure of monorisic IC
7. Ground wiring pattern
If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND pattern from
the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that resistance to the wiring
pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the small-signal GND. Pay
attention not to cause fluctuations in the GND wiring pattern of external parts as well.
8 . Selection of inductor
It is recommended to use an inductor with a series resistance element (DCR) 0.15Ω or less. Note that use of a high DCR
inductor will cause an inductor loss, resulting in decreased output voltage. Should this condition continue for a specified
period (soft start time + timer latch time), output short circuit protection will be activated and output will be latched OFF.
When using an inductor over 0.15Ω, be careful to ensure adequate margins for variation between external devices and
this IC, including transient as well as static characteristics.
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15/16
2010.04 - Rev.C
Technical Note
BD9152MUV
 Ordering part number
B
D
9
Part No.
1
5
2
M
Part No.
U
V
-
Package
MUV: VQFN020V4040
E
2
Packaging and forming specification
E2: Embossed tape and reel
VQFN020V4040
<Tape and Reel information>
4.0±0.1
4.0±0.1
2.1±0.1
0.5
0.4±0.1
1
6
16
1.0
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
5
20
10
15
2500pcs
(0.22)
S
C0.2
Embossed carrier tape
Quantity
11
2.1±0.1
0.08
S
+0.03
0.02 -0.02
1.0MAX
1PIN MARK
Tape
+0.05
0.25 -0.04
1pin
(Unit : mm)
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○
Reel
16/16
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
2010.04 - Rev.C
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
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R1010A