Features • • • • • • • • Up to 33 dBm Output Power in CW Mode High Power Added Efficiency (PAE) Single Supply Operation at 2.4 V (1 W) or 3.2 V (2 W) Current Consumption in Power-down Mode £ 10 µA No External Power Supply Switch Required Power Ramp Control Simple Input and Output Matching for Maximum Flexibility SMD Package (PSSOP16 with Heat Slug) SiGe Power Amplifier for CW Applications Electrostatic sensitive device. Observe precautions for handling. Description The T0930 is a monolithic integrated power amplifier IC. The device is manufactured with Atmel’s Silicon-Germanium (SiGe) technology and has been designed for use in 900-MHz two-way pagers, PDAs, meter readers and ISM phones. T0930 With a single supply voltage of 2.4 V to 3.4 V and a neglectable leakage current in power-down mode, the pager amplifier only needs few external components and thus helps to reduce system costs. It is suited for operation in CW mode. Figure 1. Block Diagram VCC1 VCC2 5 1 2 GND 4 10 3 16 11 RFin 12 6 Match (900 MHz) Match Match 13 RFout/VCC3 (900 MHz) 14 15 8 VCTL VCC,CTL GND 9 Harmonic tuning Control 7 4722A–SIGE–06/03 1 Pin Configuration Figure 2. Pinning PSSOP16 VCC2 1 16 GND VCC2 2 15 RFOUT/VCC3 VCC2 3 14 RFOUT/VCC3 GND 4 13 RFOUT/VCC3 VCC1 5 12 RFOUT/VCC3 RFIN 6 11 RFOUT/VCC3 GND 7 10 GND VCTL 8 9 VCC,CTL T0930 Pin Description 2 Pin Symbol Function 1 VCC2 Supply voltage 2 2 VCC2 Supply voltage 2 3 VCC2 Supply voltage 2 4 GND Ground 5 VCC1 Supply voltage 1 6 RFIN RF input 7 GND Ground (control) 8 VCTL Control input 9 VCC,CTL 10 GND Supply voltage for control 11 RFOUT/VCC3 RF output/supply voltage 3 12 RFOUT/VCC3 RF output/supply voltage 3 13 RFOUT/VCC3 RF output/supply voltage 3 14 RFOUT/VCC3 RF output/supply voltage 3 15 RFOUT/VCC3 RF output/harmonic tuning 16 GND Ground (optional) Ground T0930 4722A–SIGE–06/03 T0930 Absolute Maximum Ratings All voltages refer to GND Parameters Symbol Supply voltage VCC at VCTL = 1.7 V, Pin 5 Pin 1, 2, 3 Pins 11, 12, 13, 14 and 15 Pin 9 VCC1 VCC2 VCC3 VCC, CTL Input power, Pin 6 Gain control voltage(1), Pin 8 Min. Pin VCTL 0 Duty cycle for operation Junction temperature Tj Storage temperature Tstg Note: -40 Max. Unit 4 4 4 4 V 12 dBm 2 V 100 % +150 °C +150 °C 1. The gain control voltage should always be 0.2 V below the supply voltage. RF should be applied before ramp-up. Operating Range All voltages referred to GND Parameters Symbol Min. Typ. Max. Unit Supply voltage VCC(1) 1 W application VCC1, VCC2, VCC3, VCC, CTL 1.8 2.4 3 V Supply voltage VCC(1) 2 W application VCC1, VCC2, VCC3, VCC, CTL 2.6 3.2 3.6 V Tamb -25 Ambient temperature Input frequency Note: fin °C +85 900 MHz 1. The gain control voltage should be always 0.2 V below the supply voltage. RF should be applied before ramp-up. 3 4722A–SIGE–06/03 Electrical Characteristics for 1 W Application VCC = VCC1, ... , VCC3, VCC, CTL = +2.4 V, VCTL = 1.7 V, Tamb = +25°C, 50-W input and 50-W external output match No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* VCC 1.8 2.4 3.0 V A A A 10 µA A 935 MHz A W C dBm C 1 Power Supply 1.1 Supply voltage 1.2 Current consumption in active mode Pout = 30 dBm PAE = 47% I 1.3 Current consumption (leakage current) in power-down mode VCTL £ 0.2 V I 2 0.9 RF Input 2.1 Frequency range fin 2.2 Input impedance(1) Zi 50 2.3 Input power Pin 5 2.4 Input VSWR(1) 3 880 900 Pin = 0 to 12 dBm Pout = 30 dBm 12 2:1 C RF Output Zo 50 W Pout Pout 30 27 dBm dBm - 20 dBm A 40 47 % % A 3.1 Output impedance(1) 3.2 Output power in normal conditions Pin = 5 dBm RL = RG = 50 W VCC = 2.4 V, Tamb = +25°C VCC = 1.8 V, Tamb = +25°C 3.3 Minimum output power VCTL = 0.3 V 3.4 Power-added efficiency VCC = 2.4 V, Pout = 27 dBm VCC = 2.4 V, Pout = 30 dBm 3.5 Stability Temp = -25 to +85°C no spurious ³ -60 dBc VSWR 10:1 C 3.6 Load mismatch (stable, no damage) Pout = 30 dBm, all phases VSWR 10:1 C 3.7 Second harmonic distortion 2fo -35 dBc A 3.8 Third harmonic distortion 3fo -35 dBc A 3.9 Noise power f = 925 to 935 MHz f ³ 935 MHz -70 -82 dBm dBm C 0.5 ms A dB C dB/V C PAE PAE Pout = 30 dBm RBW = 100 kHz -73 -85 3.10 Rise and fall time Isolation between input 3.11 and output 4 Pin = 0 to 10 dBm VCTL £ 0.2 V (power down) 50 C A Power Control 4.1 Control curve Pout ³ 25 dBm 4.2 Power control range VCTL = 0.3 to 2.0 V 4.3 Control voltage range 4.4 Control current 150 50 VCTL Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V ICTL 0.3 dB C 2.0 V A 200 µA A *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. With external matching (see “Application Circuit”). 4 T0930 4722A–SIGE–06/03 T0930 Electrical Characteristics for 2 W Application VCC = VCC1, ... , VCC3, VCC, CTL = +3.2 V, VCTL = 1.9 V, Tamb = +25°C, 50-W input and 50-W external output match No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* VCC 2.6 3.2 3.6 V A A A 10 µA A 935 MHz A W C dBm C 5 Power Supply 5.1 Supply voltage 5.2 Current consumption in active mode Pout = 33 dBm PAE = 47% I 5.3 Current consumption (leakage current) in power-down mode VCTL £ 0.2 V I 6 1.33 RF Input 6.1 Frequency range fin 6.2 Input impedance(1) Zi 50 6.3 Input power Pin 5 6.4 Input VSWR(1) 7 880 900 Pin = 0 to 12 dBm Pout = 30 dBm 12 2:1 C RF Output Zo 50 W C Pout Pout 33 30 dBm dBm A - 20 dBm A 47 % A 7.1 Output impedance(1) 7.2 Output power in normal conditions Pin = 5 dBm, RL = RG = 50 W VCC = 3.2 V, Tamb = +25°C VCC = 2.2 V, Tamb = +25°C 7.3 Minimum output power VCTL = 0.3 V 7.4 Power-added efficiency VCC = 3.2 V, Pout = 27 dBm 7.5 Stability Temp = -25 to + 85°C no spurious ³ -60 dBc VSWR 10:1 C 7.6 Load mismatch (stable, no damage) Pout = 33 dBm, all phases VSWR 10:1 C 7.7 Second harmonic distortion 2fo -35 dBc A 7.8 Third harmonic distortion 3fo -35 dBc A 7.9 Noise power f = 925 to 935 MHz f ³ 935 MHz -70 -82 dBm dBm C 0.5 µs A dB C dB/V C dB C 2.0 V A 200 µA A PAE Pout = 33 dBm RBW = 100 kHz -73 -85 7.10 Rise and fall time 7.11 8 Isolation between input and output Pin = 0 to 10 dBm VCTL £ 0.2 V (power down) 50 Power Control 8.1 Control curve Pout ³ 25 dBm 8.2 Power control range VCTL = 0.3 to 2.0 V 8.3 Control voltage range 8.4 Control current 150 50 VCTL Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V ICTL 0.3 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. With external matching (see “Application Circuit”). 5 4722A–SIGE–06/03 Figure 3. Pout and PAE versus VCC (1 W Application) 50 PAE 45 Pout [dBm], PAE [%] 40 35 Pout 30 25 20 15 10 5 0 1.8 2.0 2.2 2.4 2.6 2.8 3.8 3.2 3.4 3.6 VCC [V] Figure 4. Pout and PAE versus Vramp (1 W Application) 50 PAE 40 Pout [dBm], PAE [%] Pout 30 20 10 0 -10 -20 1.00 6 1.25 1.50 Vramp [V] 1.75 2.00 T0930 4722A–SIGE–06/03 T0930 Figure 5. Pout and PAE versus VCC (2 W Application) 50 PAE 45 40 Pout [dBm], PAE [%] 35 Pout 30 25 20 15 10 5 0 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 VCC [V] Figure 6. Pout and PAE versus Vramp (2 W Application) 50 PAE 40 Pout 30 Pout [dBm], PAE [%] 20 10 0 -10 -20 -30 -40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 Vramp [V] 1.40 1.50 1.60 1.70 1.80 1.90 2.00 7 4722A–SIGE–06/03 Application Circuit Figure 7. Application Circuit GSM Pager (900 MHz) V CC C1 C2 220 nF 220 nF C3 39 pF AVX C13 220 nF T1 1 16 2 15 3 14 4 13 5 12 6 11 C12 220 nF C11 100 pF T2 T6 T3 15 pF AVX C4 12 pF L1 3.3 nH T7 T8 T9 C10 RFOUT 56 pF C9 8.2 pF AVX T5 7 10 Control V CTL C6 22 pF 8 Microstrip line : FR4 ; Epsilon(r) : 4.3 ; metal Cu : 35 mm distance 1. layer -rf ground : 0.5 mm l/mm l/mm w/mm T1 20.5 x 1.0 T6 43.1 T2 1.3 x 1.0 T7 6.0 T3 14.8 x 0.5 T8 10.0 T4 14.2 x 0.5 T9 4.0 T5 2.5 x 1.0 8 1/4 wavelength line T4 C5 RFIN 900 MHz harmonic tuning 9 V CC,CTL C7 22 pF C8 1 nF w/mm x x x x 0.5 1.25 0.5 1.25 T0930 4722A–SIGE–06/03 T0930 Ordering Information Extended Type Number Package Remarks T0930-TJT PSSOP16 Tube T0930-TJQ PSSOP16 Taped and reeled Package Information Package PSSOP16 4.98 4.80 Dimensions in mm 6.02 1.60 1.45 0.25 0.64 4.48 16 0.2 0.10 0.00 3.91 9 2.21 1.80 technical drawings according to DIN specifications 1 3.12 2.72 8 9 4722A–SIGE–06/03 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131 Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131 Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131 Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 e-mail [email protected] Web Site http://www.atmel.com Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life support devices or systems. © Atmel Corporation 2003. All rights reserved. Atmel ® and combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4722A–SIGE–06/03 xM