Features • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier (Pout Typically 23 dBm) Ramp-controlled Output Power Current-saving Standby Mode Few External Components HP-VFQFP-N16 Package Bluetooth™ 2.4-GHz Power Amplifier Electrostatic sensitive device. Observe precautions for handling. Description The T7023 is a monolithic SiGe power amplifier. It is especially designed for operation in TDMA systems like Bluetooth and WDCT. T7023 Due to the ramp-control feature and a very low quiescent current, an external switch transistor for VS is not required. V2_PA V2_PA GND V1_PA Figure 1. Block Diagram GND GND Ramp PA_IN GND GND GND V3_PA_OUT V3_PA_OUT GND V3_PA_OUT SiGe PA T7023 GND Rev. 4532B–BLURF–01/03 1 Pin Configuration V3_PA_OUT V3_PA_OUT V3_PA_OUT GND Figure 2. Pinning HP-VFQFP-N16 8 7 6 5 9 10 11 12 13 14 15 16 4 3 2 1 GND GND PA_IN GND V2_PA V2_PA GND V1_PA GND GND Ramp GND Pin Description 2 Pin Symbol 1 GND Ground Function 2 PA_IN Power amplifier input 3 GND Ground 4 GND Ground 5 GND Ground 6 V3_PA_OUT Inductor to power supply and matching network for power amplifier output 7 V3_PA_OUT Inductor to power supply and matching network for power amplifier output 8 V3_PA_OUT Inductor to power supply and matching network for power amplifier output 9 GND Ground 10 GND Ground 11 RAMP Power ramping control input 12 GND 13 V2_PA Ground Inductor to power supply for power amplifier 14 V2_PA Inductor to power supply for power amplifier 15 GND 16 V1_PA Slug GND Ground Supply voltage for power amplifier Ground T7023 4532B–BLURF–01/03 T7023 Absolute Maximum Ratings All voltages are referred to ground (Pins GND and slug), no RF Parameters Symbol Value Unit Supply voltage Pins V1_PA, V2_PA and V3_PA_OUT VS 6 V Junction temperature Tj 150 °C Storage temperature Tstg -40 to +125 °C RF input power PA PinPA 10 dBm dBm Symbol Value Unit RthJA 40 K/W Thermal Resistance Parameters Junction ambient HP-VFQFP-N16, Slug soldered on pcb Operating Range All voltages are referred to ground (Pins GND and slug). Power supply points are V1_PA, V2_PA, V3_PA_OUT. The following table represents the sum of all supply currents depending on the TX mode. Parameters Supply voltage Pins V1_PA, V2_PA and V3_PA_OUT Symbol Min. Typ. Max. Unit VS 2.7 3.0 4.6 V Supply current IS Standby current IS_standby Ambient temperature Tamb 165 mA 10 -25 +25 µA +70 °C 3 4532B–BLURF–01/03 Electrical Characteristics Test conditions (unless otherwise specified): VS = 3.0 V, Tamb = 25°C Parameters Test Conditions Symbol Min. Typ. Max. Unit VS 2.7 3.0 4.6 V (1) Power Amplifier Supply voltage Pins V1_PA, V2_PA and V3_PA_OUT Supply current TX Standby IS_TX 165 IS_standby Frequency range TX f 2.4 Gain-control range TX DGp 60 42 Power gain maximum TX Pin PA_IN to V3_PA_OUT Gp 28 30 Power gain minimum TX Pin PA_IN to V3_PA_OUT Gp -40 Ramping voltage maximum TX, power gain (maximum) Pin RAMP VRAMP max 1.7 Ramping voltage minimum TX, power gain (minimum) Pin RAMP VRAMP min Ramping current maximum V = 1.75 V Power-added efficiency TX PAE 35 42 Saturated output power TX, input power = 0 dBm referred to Pins V3_PA_OUT Psat 22 23 Input matching (2) TX, Pin PA_IN Load VSWR <1.5:1 TX, Pin V3_PA_OUT Load VSWR <1.5:1 Output matching (2) Harmonics at Psat = 23 dBm TX, Pin V3_PA_OUT Harmonics at Psat = 23 dBm TX, Pin V3_PA_OUT Notes: 4 1.75 mA 10 µA 2.5 GHz dB 33 dB -17 dB 1.83 V 0.1 V 0.5 mA % 24 dBm 2 fo -30 dBc 3 fo -30 dBc 1. Power amplifier shall be unconditionally stable, maximum duty cycle 100%, true CW operation, maximum load mismatch and duration: VSWR 10:1 (all phases) 10 s, ZG = 50 W. 2. With external matching network, load impedance 50 W T7023 4532B–BLURF–01/03 T7023 Typical Operating Characteristics Figure 3. Output Power and PAE versus Supply Voltage 250 40 220 PAE I_S_TX 30 190 Pout 20 f = 2.4 GHz Vramp = 1.8 V PinPA = 0 dBm 10 130 0 2.7 3.1 3.5 3.9 160 IS_TX (mA) Pout (dBm), PAE (%) 50 4.3 100 4.7 Supply Voltage (V) Figure 4. Output Power and PAE versus Frequency 50 250 200 I_S_TX 30 150 Pout 20 100 VS = 3 V Vramp = 1.8 V PinPA = 0 dBm 10 0 2400 IS_TX (mA) Pout (dBm), PAE (%) PAE 40 50 2420 2440 2460 2480 0 2500 Frequency (MHz) Figure 5. Output Power and PAE versus Ramp Voltage 50 250 Pout 30 200 10 150 -10 IS_TX (mA) Pout (dBm), PAE (%) PAE 100 f = 2.4 GHz VS = 3 V PinPA = 0 dBm I_S_TX -30 50 -50 0 1.2 1.4 1.6 1.8 2.0 V ramp (V) 5 4532B–BLURF–01/03 40 250 PAE Gain 30 200 20 150 I_S 10 IS_TX (mA) Pout (dBm), PAE (%), gain (dB) Figure 6. Output Power and PAE versus Input Power 100 VS = 3 V Vramp = 1.7 V PinPA = 0 dBm 0 50 Pout -10 -40.0 -30.0 -20.0 -10.0 0.0 0 10.0 Input Power (dBm) Figure 7. Pout versus Vramp and Temperature 30 f = 2.4 GHz VS = 3 V Pin = 0 dBm 20 Pout (dBm) 5 10 25 0 -15 80 -10 -40°C -20 1.0 1.2 1.4 1.6 1.8 Vramp (V) 6 T7023 4532B–BLURF–01/03 T7023 Figure 8. Output Power versus IRamp Current 30 25 20 Pout (dBM) 15 10 -40°C 40°C 5 0 80°C 0°C -5 -10 -15 -20 0.1 1.0 10.0 100.0 1000.0 Iramp (mA) Figure 9. IS_TX versus VRamp Current 200 IS_TX (mA) 180 160 -40°C 140 120 40°C 100 0°C 80 60 40 80°C 20 0 0.1 1.0 10.0 100.0 1000.0 Iramp (mA) 7 4532B–BLURF–01/03 Input/Output Circuits Figure 10. Input Circuit PA_IN/V1_PA V1_PA PA_IN GND Figure 11. Input Circuit RAMP/V1_PA V1_PA RAMP Figure 12. Input Circuit V2_PA V2_PA GND 8 T7023 4532B–BLURF–01/03 T7023 Figure 13. Input/Output Circuit V3_PA_OUT V3_PA_OUT GND Figure 14. Application Board Schematic PA IN V1_PA 1p5 V2_PA 3p3 5p6 16 15 14 13 12 1 11 2 T7023 10 3 9 4 5 6 7 8 Ramp 5p6 harm. termination 1p5 15n H blocking capacitors depending on application V3_PA PA OUT 9 4532B–BLURF–01/03 Ordering Information Extended Type Number Package Remarks T7023-PES HP-VFQFP-N16 Tube T7023-PEQ HP-VFQFP-N16 Taped and reeled Package Information 10 T7023 4532B–BLURF–01/03 Atmel Headquarters Atmel Operations Corporate Headquarters Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 487-2600 Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland TEL (41) 26-426-5555 FAX (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimhatsui East Kowloon Hong Kong TEL (852) 2721-9778 FAX (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan TEL (81) 3-3523-3551 FAX (81) 3-3523-7581 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France TEL (33) 2-40-18-18-18 FAX (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France TEL (33) 4-42-53-60-00 FAX (33) 4-42-53-60-01 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany TEL (49) 71-31-67-0 FAX (49) 71-31-67-2340 1150 East Cheyenne Mtn. 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The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life support devices or systems. Atmel ® is the registered trademark of Atmel. The Bluetooth name and the Bluetooth trademarks are owned by Bluetooth SIG, Inc, and are used by Atmel Corporation under license. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4532B–BLURF–01/03 xM