Features • Power Amplifier with High Power Added Efficient (PAE), • • • • Pout Typically 29 dBm Controlled Output Power Low-noise Preamplifier (NF Typically 1.7 dB) Few External Components PSSO16 Plastic Package with Down Set Paddle Description The T0980 is a monolithic IC manufactured with Atmel’s advanced SiGe technology. The IC performs a transmit and receive front-end dedicated for a frequency range of 400 MHz to 500 MHz. It consists of a Low-Noise Amplifier (LNA) and a Power Amplifier (PA) with good Power Efficiency (PAE). SiGe Transmit/ Receive Frontend IC T0980 Electrostatic sensitive device. Observe precautions for handling. Figure 1. Block Diagram 11 13 16 9 Bias 1 3 5 8 Rev. 4584A–SIGE–01/03 1 Pin Configuration Figure 2. Pinning PSSOP16 V2_PA_OUT 1 16 V2_PA_OUT V2_PA_OUT 2 15 GND GND 3 14 V1_PA POUT_ CONTROL 4 13 GND PA_IN T0980 GND 5 12 LNA_IN 6 11 GND 7 10 LNA_OUT BIAS_LNA 8 9 GND VS_CTRL Pin Description 2 Pin Symbol 1 V2_PA_OUT Inductor to power supply and matching network for power amplifier output 2 V2_PA_OUT Inductor to power supply and matching network for power amplifier output 3 GND 4 POUT_CONTROL 5 GND 6 LNA_IN Function Ground Power amplifier control input Ground Low-noise amplifier input 7 GND 8 BIAS_LNA Ground Resistor to VS sets the LNA current 9 VS_CTRL Supply voltage for control of power amplifier 10 LNA_OUT Low-noise amplifier output and supply voltage 11 GND Ground 12 PA_IN Power amplifier input 13 GND Ground 14 V1_PA 15 GND 16 V2_PA_OUT Supply voltage for power amplifier Ground Matching network for power amplifier output T0980 4584A–SIGE–01/03 T0980 Absolute Maximum Ratings All voltages are referred to GND Parameters Symbol Min. VS_PA Supply voltage PA, TX Pins 1, 2, 9 and 14 Supply voltage LNA, RX Pin 10 Max. Unit 4.8 V VS_LNA 2.8 V 150 °C +125 °C Junction temperature Tjmax Storage temperature TStg Electrostatic handling HMB; Pins 1, 2, 6, 10, 12 and 16 VESD 200 V Electrostatic handling HMB; Pins 3, 4, 5, 7, 8, 9, 11, 13, 14 and 15 VESD 2000 V -55 Operating Range All voltages are referred to GND. The following table represents the sum of all supply currents. Parameters Test Conditions/Pins Symbol Supply voltage PA TX, Pins 1, 2, 9 and 14 VS_PA 3.6 4.5 V VS_LNA 2.5 2.6 V IS_PA 400 mA IS_LNA 2.5 mA Supply voltage LNA RX, Pin 10 Supply current PA TX, Pins 1, 2, 9 and 14 Supply current LNA Pins 10 and 8 Ambient temperature Tamb Min. -25 Typ. 25 Max. Unit °C 60 Thermal Resistance Parameters Junction ambient Symbol Value Unit RthJA 25 K/W 3 4584A–SIGE–01/03 Electrical Characteristics Test conditions (unless otherwise specified) : VS_PA = 3.6 V, Tamb = 25°C. Parameters Test Conditions/Pins Symbol TX, Pins 1, 2, 9 and 14 VS_PA 3.6 V Supply current TX, Pins 1, 2, 9 and 14 IS_PA 400 mA Frequency range TX f Power gain TX Gp Control voltage TX, output power (maximum), Pin 4 Control current Pin 4 Shut down mode Control voltage £ 0.1 V, Pins 1, 2, 9 and 14 Power added efficiency TX at 450 MHz PAE Saturated output power TX, input power 3 dBm Harmonics Power Amplifier Min. Typ. Max. Unit (1) Supply voltage 400 TX, output power (minimum), Pin 4 500 33 dB 2.5 V 0.7 0 IS_PA MHz V 400 µA 10 µA Psat 29 dBm TX, input power 3 dBm 2 fo -20 dBc TX, input power 3 dBm 3 fo -20 dBc 50 % Low-noise Amplifier Supply voltage RX, Pins 8 and 10 VS_LNA 2.5 V Supply current RX at R1 = 5.6 kW, Pins 8 and 10 IS_LNA 2.5 mA Frequency range RX Power gain RX at R1 = 5.6 kW, Is = 2.5 mA Gp 19 Noise figure RX at R1 = 5.6 kW, Is = 2.5 mA NF 1.7 Isolation RX at R1 = 5.6 kW, Is = 2.5 mA ISO 20 dB 3rd-order input interception point RX at R1 = 5.6 kW, Is = 2.5 mA IIP3 -10 dBm Note: 4 f 400 500 MHz dB 2.5 dB 1. Power amplifier should be unconditional stable, maximum duty cycle 100%, true cw-operation, maximum load mismatch 10:1 for 5 s at 3.6 V T0980 4584A–SIGE–01/03 T0980 Typical Characteristics Figure 3. Power Sweep 70.0 60.0 PAE PAE (%) Pout (dBm) Gain (dB) 50.0 40.0 30.0 Pout 20.0 Gain 10.0 0.0 -10.0 -20.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 10.0 20.0 Pin (dBm) Figure 4. Ramp Sweep 70 60 PAE PAE (%) Pout (dBm) 50 40 30 Pout 20 10 0 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 Vramp (V) Figure 5. VCC Sweep 70.0 60.0 PAE PAE (%) Pout (dBm) 50.0 40.0 30.0 Pout 20.0 10.0 0.0 0.0 1.0 2.0 VCC (V) 3.0 4.0 5.0 5 4584A–SIGE–01/03 Figure 6. Typical Application Circuit (460 MHz) C12 1uF VS_PA C2 1uF C9 100pF C11 L6 100pF L5 22nH 4.7nH PA_OUT 2.7pF 6.8nH 1 16 2 15 GND C8 L4 C10 12pF 3 L1 1.5nH T0980 14 C1 4 POUT_CTRL Bias 13 C15 100pF 1nF C3 100pF C14 C13 8.2pF 100pF LNA_IN 5 12 R3 39 6 11 7 10 C5 LNA_OUT L3 C16 NC 39nH 3.9pF L7 22nH BIAS_LNA PA_IN L2 R1 8 9 C4 22nH R2 NC 0 5.6k C6 100pF VS_LNA C18 10nF VS_CTRL C7 100pF 6 C17 NC T0980 4584A–SIGE–01/03 T0980 Ordering Information Extended Type Number Package Remarks T0980-TJS PSSO16 Tube T0980-TJQ PSSO16 Taped and reeled Package Information 7 4584A–SIGE–01/03 Atmel Headquarters Atmel Operations Corporate Headquarters Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 487-2600 Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland TEL (41) 26-426-5555 FAX (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimhatsui East Kowloon Hong Kong TEL (852) 2721-9778 FAX (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan TEL (81) 3-3523-3551 FAX (81) 3-3523-7581 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France TEL (33) 2-40-18-18-18 FAX (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France TEL (33) 4-42-53-60-00 FAX (33) 4-42-53-60-01 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany TEL (49) 71-31-67-0 FAX (49) 71-31-67-2340 1150 East Cheyenne Mtn. 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