Features • • • • • • • • Single 3-V Supply Voltage High-power-added Efficient Power Amplifier (Pout Typically 28 dBm) Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode Few External Components Package: QFN20 ISM 2.4 GHz Front End IC 1. Description The T7026 is a monolithic SiGe transmit/receive front-end IC with power amplifier, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT, IEEE 802.11 FHSS WLAN, home RF and ISM proprietary radios. Due to the ramp-control feature and a very low quiescent current, an external switch transistor for VS is not required. T7026 Electrostatic sensitive device. Observe precautions for handling. V2_PA RAMP GND V2_PA GND V1_PA PA_IN V3_PA_OUT TX/RX standby control GND LNA_OUT RX_ON PU Block Diagram PA LNA TX SiGe FE V3_PA_OUT V3_PA_OUT GND VS_LNA LNA_IN SWITCH_OUT_TX SWITCH_OUT_RX T7026 R_SWITCH Figure 1-1. Rev. 4563E–ISM–07/05 2. Pin Configuration Pinning QFN20 V3_PA_OUT V3_PA_OUT V3_PA_OUT GND_LNA2 LNA_IN Figure 2-1. 10 V2_PA V2_PA GND V1_PA NC 9 8 7 6 11 5 12 4 T7026 13 3 2 14 1 15 GND_LNA1 SWITCH_OUT_TX SWITCH_OUT_RX R_SWITCH RX_ON RAMP PA_IN VS_LNA LNA_OUT PU 16 17 18 19 20 Figure 2-2. 2 Pin Description Pin Symbol Function 1 RX_ON RX active high 2 R_SWITCH 3 SWITCH_OUT_RX Switched current output for PIN diode (active in RX mode) Resistor to GND sets the PIN diode current 4 SWITCH_OUT_TX Switched current output for PIN diode (active in TX mode) 5 GND_LNA1 Ground 6 LNA_IN 7 GND_LNA2 Ground 8 V3_PA_OUT Inductor to power supply and matching network for power amplifier output 9 V3_PA_OUT Inductor to power supply and matching network for power amplifier output 10 V3_PA_OUT Inductor to power supply and matching network for power amplifier output 11 V2_PA Inductor to power supply for power amplifier 12 V2_PA Inductor to power supply for power amplifier 13 GND 14 V1_PA 15 NC 16 RAMP Power ramping control input 17 PA_IN Power amplifier input 18 VS_LNA 19 LNA_OUT 20 PU Slug GND Low-noise amplifier input Ground Supply voltage for power amplifier Not connected Supply voltage input for low-noise amplifier Low-noise amplifier output Power-up active high Ground T7026 4563E–ISM–07/05 T7026 3. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. All voltages are referred to ground (pins GND and slug) Parameters Symbol Value Unit Supply voltage Pins VS_LNA, V1_PA, V2_PA and V3_PA_OUT, no RF VS 5 V Junction temperature Tj 150 °C Storage temperature Tstg –40 to +125 °C RF input power LNA PinLNA 5 dBm RF input power PA PinPA 10 dBm Symbol Value Unit RthJA 27 K/W 4. Thermal Resistance Parameters Junction ambient QFN20, slug soldered on PCB 5. Operating Range All voltages are referred to ground (pins GND and slug). Power supply points are VS_LNA, V1_PA, V2_PA, V3_PA_OUT. The following table represents the sum of all supply currents depending on the TX/RX mode. Parameters Symbol Min. Typ. Max. Unit Supply voltage Pins V1_PA, V2_PA and V3_PA_OUT VS 2.7 3.6 4.6 V Supply voltage Pin VS_LNA VS 2.7 3.0 5.5 V Supply current TX RX IS IS 470 8 mA mA Standby current PU = 0 IS 10 µA Ambient temperature Tamb –25 +25 +70 °C 3 4563E–ISM–07/05 6. Electrical Characteristics Test conditions (unless otherwise specified): VS = 3.6 V, Tamb = 25°C Parameters Power Amplifier Test Conditions Symbol Min. Typ. Max. Unit VS 2.7 3.6 4.6 V (1) Pins V1_PA, V2_PA and V3_PA_OUT Supply voltage Supply current Standby current TX IS_TX 470 RX (PA off), VRAMP ≤ 0.1 V IS_RX 10 µA Standby for VRAMP ≤ 0.1 V IS_standby 10 µA 2.5 GHz Frequency range TX f 2.4 Gain-control range TX ∆Gp 60 42 Power gain maximum TX Pin PA_IN to V3_PA_OUT Gp 28 33 Gp –40 1.6 Power gain minimum Ramping voltage maximum TX, power gain (max), pin RAMP VRAMP max Ramping voltage minimum TX, power gain (min), pin RAMP VRAMP min Ramping current maximum TX, VRAMP = 1.75 V, pin RAMP IRAMP max 1.65 mA dB 34 dB –17 dB 1.7 V 1 V 0.1 mA Power-added efficiency TX PAE 33 37 Saturated output power TX, input power = 0 dBm referred to pins V3_PA_OUT % Psat 27 28 Input matching(2) TX pin PA_IN Load VSWR < 1.5:1 Output matching(2) TX pins V3_PA_OUT Load VSWR < 1.5:1 Harmonics at P 1dBCP TX pins V3_PA_OUT 2 fo –30 dBc Harmonics at P 1dBCP TX pins V3_PA_OUT 3 fo –30 dBc 29 dBm T/R-switch Driver (Current Programming by External Resistor from R_SWITCH to GND) IS_O_standby 1 µA RX IS_O_RX 1 µA Standby, pin SWITCH_OUT Switch-out current output TX at 100 Ω IS_O_100 1.7 mA TX at 1.2 kΩ IS_O_1k2 7 mA TX at 33 kΩ IS_O_33k 17 mA IS_O_R 19 mA TX at R switch open I_Switch_Out_RX maximum Low-noise Amplifier 7 mA 3.0 5 V 8 10 mA 0.5 mA 10 µA (3) Supply voltage All, pin VS_LNA VS Supply current RX IS Supply current (LNA and control logic) TX (control logic active) pin VS_LNA IS Standby current Standby, pin VS_LNA IS_standby 2.7 1 Frequency range RX f 2.4 2.5 GHz Notes: 1. Power amplifier shall be unconditionally stable, maximum duty cycle 100%, true cw operation, maximum load mismatch and duration: VSWR = 8:1 (all phases) 10 s, ZG = 50 Ω, VS = 3.6 V. 2. With external matching network, load impedance 50 Ω. 3. Low-noise amplifier shall be unconditionally stable. 4. With external matching components. 4 T7026 4563E–ISM–07/05 T7026 6. Electrical Characteristics (Continued) Test conditions (unless otherwise specified): VS = 3.6 V, Tamb = 25°C Parameters Test Conditions Symbol Min. Typ. Max. Unit Power gain RX, pin LNA_IN to LNA_OUT Gp 15 16 19 dB Noise figure RX NF 2.1 2.3 dB Gain compression RX, referred to pin LNA_OUT Third-order input interception point RX Input matching (4) Output matching (4) RX, pin LNA_IN RX, pin LNA_OUT O1dB –9 –7 –6 dBm IIP3 –16 –14 –13 dBm VSWRin < 2:1 VSWRout < 2:1 Logic Input Levels (RX_ON, PU) High input level = 1, pins RX_ON and PU ViH 2.4 VS, LNA V Low input level =0 ViL 0 0.5 V High input current = 1, ViH = 2.4 V IiH 60 µA 40 0.2 µA Low input current =0 IiL Notes: 1. Power amplifier shall be unconditionally stable, maximum duty cycle 100%, true cw operation, maximum load mismatch and duration: VSWR = 8:1 (all phases) 10 s, ZG = 50 Ω, VS = 3.6 V. 2. With external matching network, load impedance 50 Ω. 3. Low-noise amplifier shall be unconditionally stable. 4. With external matching components. 7. Control Logic for LNA and T/R-switch Driver Operation Mode PU RX_ON Standby 0 0 TX 1 0 RX 1 1 5 4563E–ISM–07/05 8. Input/Output Circuits Figure 8-1. Internal Circuitry; PA_IN, V1_PA V1_PA PA_IN GND Figure 8-2. Internal Circuitry; RAMP, V1_PA V1_PA RAMP Figure 8-3. Internal Circuitry V2_PA V2_PA GND 6 T7026 4563E–ISM–07/05 T7026 Figure 8-4. Internal Circuitry V3_PA_OUT V3_PA_OUT GND Figure 8-5. Internal Circuitry SWITCH_OUT_RX, SWITCH_OUT_TX, R_SWITCH, V1_PA V1_PA SWITCH_OUT_RX/ SWITCH_OUT_TX R_SWITCH GND Figure 8-6. Internal Circuitry LNA_IN, VS_LNA VS_LNA LNA_IN GND 7 4563E–ISM–07/05 Figure 8-7. Internal Circuitry PU, RX_ON, VS_LNA VS_LNA RX_ON/ PU Figure 8-8. Internal Circuitry LNA_OUT, VS_LNA VS_LNA LNA_OUT GND 8 T7026 4563E–ISM–07/05 T7026 9. Ordering Information Extended Type Number T7026-PGQ T7026-PGP Package QFN20 Remarks MOQ Taped and reeled 6,000 QFN20 Taped and reeled 1,500 T7026-PGQW QFN20, Pb-free, halogen-free Taped and reeled 6,000 T7026-PGPW QFN20, Pb-free, halogen-free Taped and reeled 1,500 10. Package Information 9 4563E–ISM–07/05 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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