STPS30100ST Power Schottky rectifier Main product characteristics IF(AV) 30 A VRRM 100 V Tj (max) 150° C VF(typ) 0.385 V A K A K Features and Benefits ■ Avalanche rated ■ Low VF ■ Good trade off between leakage current and forward voltage drop ■ High frequency operation ■ Avalanche capability specified A A K TO-220AB STPS30100ST Description Single Schottky rectifier, suited for high frequency switch mode power supply. Packaged in TO-220AB, this device is intended to be used in notebook and game station adaptors, providing in these applications a good efficiency at both low and high load. Table 1. Absolute Ratings (limiting values) Symbol Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) RMS forward current 60 A IF(AV) Average forward current δ = 0.5 Tc = 125° C 30 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 300 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25° C Storage temperature range Tstg Maximum operating junction temperature (1) Tj 1. Parameter dPtot --------------dTj < 1 -------------------------Rth ( j – a ) October 2006 26400 W -65 to + 175 °C 150 °C condition to avoid thermal runaway for a diode on its own heatsink Rev 1 1/7 www.st.com 7 Characteristics 1 STPS30100ST Characteristics Table 2. Thermal resistance Symbol Rth(j-c) Table 3. Symbol Parameter Parameter Test Conditions Reverse leakage current Tj = 125° C Tj = 25° C Tj = 25° C Tj = 125° C Tj = 25° C Forward voltage drop Tj = 125° C Tj = 25° C Tj = 125° C Tj = 25° C Tj = 125° C VR = VRRM VR = 70 V °C/W Min. Typ. 20 10 Max. Unit 175 µA 50 mA 60 µA 20 mA 0.475 IF = 5 A 0.385 0.555 IF = 10 A 0.475 V IF = 15 A IF = 30 A 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.475 x IF(AV) + 0.006 x IF2(RMS) 2/7 1 Static electrical characteristics (per diode) Tj = 125° C VF(2) Unit Junction to case Tj = 25° C IR(1) Value 0.620 0.660 0.525 0.565 0.740 0.800 0.605 0.655 STPS30100ST Figure 1. Characteristics Conduction losses versus average Figure 2. current PF (av)(W) 26 35 δ=0.05 24 δ=0.1 δ=0.2 δ=0.5 Average forward current versus ambient temperature (δ = 0.5) IF(av)(A) δ=1 Rth(j-a)=Rth(j-c) 30 22 20 25 18 16 20 14 12 15 10 8 Rth(j-a)=15°C/W 10 T 6 T 4 5 2 δ=tp/T IF(av)(A) tp δ=tp/T 0 4 8 Figure 3. 12 16 Tamb(°C) tp 0 0 20 24 28 32 0 36 Normalized avalanche power derating versus pulse duration 25 Figure 4. PARM(tp) PARM(1µs) 1 1.2 50 75 100 125 150 Normalized avalanche power derating versus junction temperature PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 0.1 Figure 5. 350 Tj(°C) tp(µs) 1 0 10 100 1000 Non repetitive surge peak forward current versus overload duration (maximum values) 0 25 Figure 6. IM(A) 1.0 50 75 100 125 150 Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 0.9 300 0.8 250 0.7 0.6 200 Tc=25°C 150 Tc=75°C 0.4 0.3 100 Tc=125°C 50 0.5 IM t(s) δ=0.5 0 1.E-03 0.2 0.1 t Single pulse tp(s) 0.0 1.E-02 1.E-01 1.E+00 1.E-03 1.E-02 1.E-01 1.E+00 3/7 Characteristics Figure 7. 1.E+03 STPS30100ST Reverse leakage current versus reverse voltage applied (typical values) Figure 8. IR(mA) Junction capacitance versus reverse voltage applied (typical values) C(pF) 10000 F=1M H z Vosc=30m V Tj=25°C 1.E+02 Tj=150°C 1.E+01 Tj=125°C Tj=100°C 1.E+00 Tj=75°C 1.E-01 1000 Tj=50°C Tj=25°C 1.E-02 1.E-03 VR(V) V R (V) 1.E-04 100 0 10 Figure 9. 200 20 30 40 50 60 70 80 90 100 Forward voltage drop versus forward current (high level) 1 10 100 Figure 10. Forward voltage drop versus forward current (low level) IFM(A) 30 IFM(A) 180 25 Tj=125°C (Maximum values) 160 Tj=125°C (Maximum values) 140 20 120 Tj=125°C (Typical values) 100 15 Tj=125°C (Typical values) 80 10 60 Tj=25°C (Maximum values) Tj=25°C (Maximum values) 40 5 20 VFM(V) VFM(V) 0 0 0.0 4/7 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.2 0.4 0.6 0.8 1.0 STPS30100ST 2 Package Information Package Information Epoxy meets UL94,V0 Table 4. TO-220AB dimensions Dimensions Ref. Millimeters Min. A 15.20 a1 C B ØI Typ. Max. Inches Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 ØI 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 b2 L F A I4 l3 c2 a1 l2 a2 M b1 e c1 M 2.60 0.102 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering Information 3 4 6/7 STPS30100ST Ordering Information Ordering type Marking Package Weight Base qty Delivery mode STPS30100ST STPS30100ST TO-220AB 2.23 g 50 Tube Revision History Date Revision 24-Oct-2006 1 Changes First issue STPS30100ST Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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