STMICROELECTRONICS STPS20L40C

STPS20L40C
Low drop power Schottky rectifier
Main product characteristics
A1
K
IF(AV)
2 x 10 A
VRRM
40 V
Tj (max)
150° C
VF(max)
0.5 V
A2
Features and benefits
■
Low forward voltage drop meaning very small
conduction losses
■
Low dynamic losses as a result of the schottky
barrier
■
Insulated package: TO-220FPAB
insulating voltage = 200 V DC
capacitance = 12 pF
■
Avalanche capability specified
A2
K
A1
TO-220FPAB
STPS20L40CFP
Description
Dual center tap Schottky rectifiers designed for
high frequency switched mode power supplies
and DC to DC converters.
These devices are intended for use in low voltage,
high frequency inverters, free-wheeling and
polarity protection applications.
March 2007
Rev 5
1/7
www.st.com
7
Characteristics
1
STPS20L40C
Characteristics
Table 1.
Absolute Ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
40
V
IF(RMS)
RMS forward voltage
30
A
IF(AV)
Average forward current
Tc = 115° C Per diode
δ = 0.5
Per device
10
20
A
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
180
A
IRRM
Peak repetitive reverse current
tp = 2 µs square F = 1 kHz
1
A
IRSM
Non repetitive peak reverse current
tp = 100 µs square
2
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25°C
4000
W
-65 to + 150
°C
150
°C
10000
V/µs
Tstg
Storage temperature range
Maximum operating junction temperature (1)
Tj
dV/dt
1.
dPtot
--------------dTj
Critical rate of rise of reverse voltage
<
Table 2.
1
-------------------------Rth ( j – a )
condition to avoid thermal runaway for a diode on its own heatsink
Thermal resistances
Symbol
Rth(j-c)
Parameter
Per diode
Total
Coupling
Junction to case
Value
Unit
4.5
3.5
2.5
°C/W
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c).
Table 3.
Symbol
IR(1)
VF(1)
Static electrical characteristics (per diode)
Parameter
Reverse leakage current
Test Conditions
Tj = 25° C
Tj = 100° C
Forward voltage drop
VR = VRRM
Tj = 25° C
IF = 10 A
Tj = 125° C
IF = 10 A
Tj = 25° C
IF = 20 A
Tj = 125° C
IF = 20 A
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.28 x IF(AV) + 0.022 IF2(RMS)
2/7
Min.
Typ.
15
Max.
Unit
0.7
mA
35
mA
0.55
0.44
0.5
V
0.73
0.62
0.72
STPS20L40C
Figure 1.
Characteristics
Average forward power
Figure 2.
dissipation versus average forward
current (per diode)
IF(AV)(A)
PF(AV)(W)
8
δ = 0.1
12
δ = 0.2
δ = 0.5
δ = 0.05
7
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
11
Rth(j-a)=Rth(j-c)
10
9
6
8
δ=1
5
Rth(j-a)=15°C/W
7
6
4
5
3
4
T
2
T
3
2
1
δ=tp/T
IF(AV)(A)
1
tp
δ=tp/T
0
0
0
2
4
Figure 3.
6
8
10
12
14
Normalized avalanche power
derating versus pulse duration
0
25
Figure 4.
PARM(tp)
PARM(1µs)
Tamb(°C)
tp
50
75
100
125
150
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(25°C)
1
1.2
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
Figure 5.
1
0
10
100
25
1000
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 6.
50
75
100
125
150
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
IM(A)
1.0
100
90
0.8
80
70
60
TC=25°C
0.6
δ = 0.5
50
40
TC=50°C
0.4
δ = 0.2
30
20
10
0
1E-3
TC=100°C
IM
t
0.2
tp(s)
t(s)
δ=0.5
1E-2
T
δ = 0.1
1E-1
1E+0
0.0
1E-3
Single pulse
1E-2
1E-1
δ=tp/T
1E+0
tp
1E+1
3/7
Characteristics
Figure 7.
STPS20L40C
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 8.
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
IR(mA)
2000
2E+2
1E+2
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=150°C
Tj=125°C
1000
1E+1
Tj=75°C
1E+0
1E-1
Tj=25°C
1E-2
VR(V)
VR(V)
100
1E-3
0
5
Figure 9.
10
15
20
25
30
35
40
Forward voltage drop versus
forward current (maximum values)
(per diode)
IFM(A)
100.0
Tj=150°C
(typical values)
Tj=125°C
10.0
Tj=25°C
1.0
Tj=75°C
VFM(V)
0.1
0.0
4/7
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
2
5
10
20
50
STPS20L40C
2
Package Information
Package Information
●
Epoxy meets UL94, V0
●
Cooling method: by conduction (C)
●
Recommended torque value: 0.55 Nm
●
Maximum torque value: 0.70 Nm
Table 4.
TO-220FPAB dimensions
Dimensions
Ref
A
B
H
Dia
L6
L7
L2
L3
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.018
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L5
F1
L4
D
F2
L2
F
E
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.205
L4
9.8
10.6
0.386
0.417
L5
2.9
3.6
0.114
0.142
L6
15.9
16.4
0.626
0.646
L7
9.00
9.30
0.354
0.366
Dia.
3.00
3.20
0.118
0.126
G1
G
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
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Ordering information
3
4
6/7
STPS20L40C
Ordering information
Ordering type
Marking
Package
Weight
Base qty
Delivery
mode
STPS20L40CFP
STPS20L40CFP
TO-220FPAB
2g
50
Tube
Revision history
Date
Revision
Jul_2003
4B
26-Mar-2007
5
Description of Changes
Last release.
Removed ISOWATT, TO-220AB and TO-247 packages.
STPS20L40C
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