STMICROELECTRONICS STPS1H100MF

STPS1H100MF
High voltage power Schottky rectifier
Features
■
Negligible switching losses
■
High junction temperature capability
■
Low leakage current
■
Good trade-off between leakage current and
forward voltage drop
■
Avalanche capability specified
Description
A
K
STmite flat
(DO222-AA)
Table 1.
Schottky rectifier designed for high frequency
miniature switch mode power supplies such as
adaptors and on-board DC/DC convertors. This
device is packaged in STmite flat.
May 2008
Rev 1
Device summary
IF(AV)
1A
VRRM
100 V
Tj (max)
175 °C
VF (max)
0.62 V
1/7
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Characteristics
1
STPS1H100MF
Characteristics
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IF(RMS)
Forward current rms
Unit
100
V
2
A
IF(AV)
Average forward current
Tc = 160 °C δ = 0.5
1
A
IFSM
Surge non repetitive forward current tp = 10 ms sinusoidal
50
A
IRRM
Repetitive peak reverse current
tp = 2 µs, F = I kHz square
1
A
IRSM
Non-repetitive peak reverse current
tp = 100 µs square
1
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
1500
W
-65 to + 175
°C
175
°C
10000
V/µs
Tstg
Storage temperature range
Tj
Maximum operating junction
dV/dt
1.
Value
dPtot
--------------dTj
Critical rate of rise of reverse voltage (rated VR, Tj = 25 °C)
1
- condition to avoid thermal runaway for a diode on its own heatsink
< ------------------------Rth ( j – a )
Table 3.
Thermal resistance
Symbol
Rth(j-c)
Table 4.
Symbol
IR (1)
temperature(1)
Parameter
Unit
20
°C/W
Junction to case
Static electrical characteristics
Parameter
Reverse leakage current
Tests conditions
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
VF(2)
Value
Forward voltage drop
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Min.
Typ
0.2
Max.
Unit
4
µA
0.5
mA
0.77
IF = 1 A
0.58
0.62
V
IF = 2 A
0.86
0.65
0.7
1. Pulse test: = 5 ms, δ < 2%
2. Pulse test: = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.54 x IF(AV) + 0.08 IF2(RMS)
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STPS1H100MF
Figure 1.
Characteristics
Average forward power dissipation Figure 2.
versus average forward current
PF(AV)(W)
0.9
1.2
0.8
0.6
IF(AV)(A)
δ=1
δ=0.5
δ=0.2
Rth(j-a)=Rth(j-c)
1.0
δ=0.1
0.7
Average forward current versus
ambient temperature (δ = 0.5)
0.8
δ=0.05
0.5
0.6
0.4
Rth(j-a)=250°C/W
0.4
0.3
T
T
0.2
0.2
0.1
IF(AV)(A)
δ=tp/T
δ=tp/T
tp
0.0
0.1
0.2
Figure 3.
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Tamb(°C)
tp
0.0
0.0
1.1
0
1.2
Normalized avalanche power
derating versus pulse duration
25
Figure 4.
PARM(tp)
PARM(1µs)
50
75
100
125
150
175
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
PARM(25°C)
1
1.2
1
0.1
0.8
0.6
0.4
0.01
0.2
0.01
0.1
Figure 5.
22
Tj(°C)
tp(µs)
0.001
1
0
10
100
1000
Non repetitive surge peak forward
current versus overload duration
(maximum values)
IM(A)
25
Figure 6.
20.0
20
18.0
18
16.0
16
14.0
14
50
75
100
125
150
Forward voltage drop versus
forward current
IFM(A)
Tj=125 °C
(Maximum values)
12.0
12
Tc=25 °C
10
Tc=75 °C
10.0
Tj=125 °C
(Typical values)
8.0
8
Tc=125 °C
6
4
2
0
1.E-04
6.0
Tj=25 °C
(Maximum values)
4.0
IM
2.0
t
δ =0.5
1.E-03
t(s)
1.E-02
VFM(V)
0.0
1.E-01
1.E+00
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
3/7
Characteristics
Figure 7.
1.0
STPS1H100MF
Relative variation of thermal
impedance, junction to ambient,
versus pulse duration (epoxy
printed circuit board, copper
thickness = 35 µm, recommended
pad layout)
Zth(j-a)/Rth(j-a)
Figure 8.
225
0.8
200
0.7
175
0.6
150
0.5
125
0.4
100
0.3
75
0.2
0.1
Rth(j-a) (°C/W)
250
0.9
Thermal resistance, junction to
ambient, versus copper surface
under each lead (epoxy
printed board FR4,
copper thickness = 35 µm)
50
Single pulse
25
tp(s)
0.0
1.E-02
1.E-01
Figure 9.
1.E+04
SCU(cm2)
0
1.E+00
1.E+01
1.E+02
1.E+03
Reverse leakage current versus
voltage applied (typical values)
IR(µA)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4.0
4.5
5.0
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values)
100
C(pF)
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
Tj=150 °C
1.E+03
3.5
Tj=125 °C
1.E+02
Tj=100 °C
1.E+01
Tj=75 °C
1.E+00
Tj=50 °C
1.E-01
Tj=25 °C
1.E-02
VR(V)
VR(V)
10
1.E-03
0
4/7
20
40
60
80
100
1
10
100
STPS1H100MF
2
Package information
Package information
●
Epoxy meets UL94, V0
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com.
Table 5.
STmite flat dimensions
Dimensions
Ref.
L
E1
D
L1
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
0.80
0.85
0.95
0.031 0.033 0.037
b
0.40
0.55
0.65
0.016 0.022 0.026
b2
0.70
0.85
1.00
0.027 0.033 0.039
L2
b
b2
L3
E
Millimeters
c
A
c
0.10
0.15
0.25
0.004 0.006 0.009
D
1.75
1.90
2.05
0.069 0.075 0.081
E
3.60
3.80
3.90
0.142 0.150 0.154
E1
2.80
2.95
3.10
0.110 0.116 0.122
L
0.50
0.55
0.80
0.020 0.022 0.031
L1
2.10
2.40
2.60
0.083 0.094 0.102
L2
0.45
0.60
0.75
0.018 0.024 0.030
L3
0.20
0.35
0.50
0.008 0.014 0.020
Figure 11. STmite flat recommended footprint (all dimensions in mm)
0.85 0.63
2.00
0.65
0.65
0.95
1.95
4.13
5/7
Ordering information
3
Ordering information
Table 6.
4
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
STPS1H100MF
M11
STmite flat
16 mg
12000
Tape and reel
Revision history
Table 7.
6/7
STPS1H100MF
Document revision history
Date
Revision
15-May-2008
1
Changes
First issue.
STPS1H100MF
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