PHILIPS BA316

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BA316; BA317; BA318
High-speed diodes
Product specification
Supersedes data of April 1996
1996 Sep 03
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
FEATURES
DESCRIPTION
• Hermetically sealed leaded glass
SOD27 (DO-35) package
The BA316, BA317, BA318 are high-speed switching diodes fabricated in
planar technology, and encapsulated in hermetically sealed leaded glass
SOD27 (DO-35) packages.
• High switching speed: max. 4 ns
• General application
• Continuous reverse voltage: 10 V,
30 V, 50 V
• Repetitive peak reverse voltage:
max. 15 V, 40 V, 60 V
handbook, halfpage
k
a
MAM246
• Repetitive peak forward current:
max. 225 mA.
The diodes are type branded.
APPLICATIONS
• High-speed switching.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
VR
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
repetitive peak reverse voltage
BA316
−
15
V
BA317
−
40
V
BA318
−
60
V
BA316
−
10
V
BA317
−
30
V
BA318
−
50
V
−
100
mA
−
225
mA
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
−
350
storage temperature
−65
+200
°C
junction temperature
−
200
°C
Ptot
total power dissipation
Tstg
Tj
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Sep 03
2
mW
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
reverse current
BA316
BA317
BA318
CONDITIONS
MIN.
MAX.
UNIT
see Fig.3
IF = 1 mA
−
700
mV
IF = 10 mA
−
850
mV
IF = 100 mA
−
1100
mV
VR = 10 V
−
200
nA
VR = 10 V; Tj = 150 °C
−
100
µA
VR = 10 V
−
50
nA
VR = 30 V
−
200
nA
VR = 30 V; Tj = 150 °C
−
100
µA
VR = 30 V
−
50
nA
VR = 50 V
−
200
nA
VR = 50 V; Tj = 150 °C
−
100
µA
see Fig.5
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
−
2
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
−
4
ns
Vfr
forward recovery voltage
when switched from IF = 50 mA;
tr = 20 ns; see Fig.8
−
2.5
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
Rth j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
500
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 03
3
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
GRAPHICAL DATA
MBG452
200
MBG465
300
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
200
(1)
(2)
(3)
100
100
0
0
0
100
Tamb (oC)
200
0
2
VF (V)
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
1
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 03
4
104
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
MGD008
103
handbook, halfpage
MGD004
1.2
handbook, halfpage
IR
(µA)
10
Cd
(pF)
2
1.0
10
0.8
1
0.6
10−1
10−2
0
100
Tj (oC)
0.4
200
0
VR = VRmax.
Solid line; maximum values.
Dotted line; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
1996 Sep 03
5
10
VR (V)
20
Diode capacitance as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R S = 50 Ω
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
1996 Sep 03
6
t
tp
output
signal
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
PACKAGE OUTLINE
handbook, full pagewidth
0.56
max
1.85
max
4.25
max
25.4 min
25.4 min
MLA428 - 1
Dimensions in mm.
Fig.9 SOD27 (DO-35).
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 03
7