Document No.001-88012 Rev. *A ECN # 4407380 Cypress Semiconductor Product Qualification Report QTP# 070505 VERSION *A June 2014 PSOC™ QUARK DEVICE FAMILY S4AD-5 TECHNOLOGY, FAB 5 CY8C20000 CY8C20234 CY8C20334 CY8C20434 CY8C20534 PSoC® Programmable System-on- Chip™ CY8C20224 CY8C20324 CY8C20424 CY8C20524 CapSense™ PSoC® Programmable System-on-Chip™ FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 12 Document No.001-88012 Rev. *A ECN # 4407380 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 060605 Qualify GSMC using PSoC Device Product Family on S4AD-5 Technology Aug 06 070505 Qualify PSOC 8C20000A Quark Device on S4AD-5 Technology, Fab5 (GSMC) Jan 08 081803 To qualify New Metal 2 mask (MM2, SA Iref adjust) and Metal 1 mask (MM1, Vneg Cut) Aug 08 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 12 Document No.001-88012 Rev. *A ECN # 4407380 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify PSoC 8C20000A Quark Device on S4AD-5 Technology, Fab5 (GSMC) Device Description: CY8C20534, CY8C20434, CY8C20334, CY8C20234, CY8C20000, CY8C20224, CY8C20324, CY8C20424, CY8C20524 3.3V and 5V Industrial 12Mhz Programmable System on Chip Cypress Division: Cypress Semiconductor - Consumer and Computation Division Marketing Part #: TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 Number of Metal Layers: 2 Metal Composition: Metal 1: 250A TiN/5,800A Al/700A TiN Metal 2: 500A TiN/8,000A Al/250A TiN Passivation Type and Materials: 7,000A TeOs /6,000A Si3N4 Generic Process Technology/Design Rule (µ-drawn): Single Poly, Double Metal, 0.35 µm Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: GSMC China Die Fab Line ID/Wafer Process ID: S4AD-5 GSMC Sonos PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 28-Lead SSOP PHIL-M, TAIWN-T, CML-RA 16-Lead QFN PHIL-M 24-Lead QFN SEOUL-L, CML-RA 32-Lead QFN SEOUL-L, CML-RA, PHIL-MB 48-Lead QFN SEOUL-L, CML-RA Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 12 Document No.001-88012 Rev. *A ECN # 4407380 MAJOR PACKAGE INFORMATION FOR THIS QUALIFICATION Package Designation: SP28 Package Outline, Type, or Name: 28-Lead Shrunk Small Outline Package (SSOP) Mold Compound Name/Manufacturer: G600 Sumitomo Mold Compound Flammability Rating: V-0 PER UL-94 Oxygen Rating Index: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: Pure Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Ablestik Die Attach Material: 8290 Die Attach Method: Epoxy Bond Diagram Designation: 001-14450 Wire Bond Method: Thermosonic Wire Material/Size: Au. 1.0mil Thermal Resistance Theta JA °C/W: 96 Package Cross Section Yes/No: N/A Assembly Process Flow: 001-00365 Name/Location of Assembly (prime) facility: Amkor-Phil MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: Fault Coverage: CML-R, CML-RA, KYEC, Taiwan 100% Note: Please contact a Cypress Representative for other packages availability Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 12 Document No.001-88012 Rev. *A ECN # 4407380 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Tes t Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C P High Temperature Steady State life 125°C, 5.5V, Vcc Max P Low Temperature Operating Life -30°C, 5.5V P High Accelerated Saturation Test (HAST) 130°C, 5.25V, 85%RH P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C P Pressure Cooker 121°C, 100%RH, 15 Psig P Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Acoustic Microscopy J-STD-020 P Age Bond Strength P Data Retention 200C, 4hrs MIL-STD-883, Method 883-2011 150°C ± 5°C No Bias Dynamic Latch-up 125C, 8.5V P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-E P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101C Endurance Test MIL-STD-883, Method 883-1033 P Static Latch-up 125C, ± 200mA , In accordance with JESD78 P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 12 P P Document No.001-88012 Rev. *A ECN # 4407380 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy High Temperature Operating Life Early Failure Rate1 1,022 Devices 0 N/A High Temperature Operating Life1, 2 Long Term Failure Rate 720,000 DHRs 0 0 .7 1 2 3 Therm al3 A. N/ A Failure Rate 5 5 23 FIT Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 12 0 PPM Document No.001-88012 Rev. *A ECN # 4407380 Reliability Test Data QTP #: 060605 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej ACOUSTIC, MSL1 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1500 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 336 256 0 9621713 610632687A PHIL-M COMP 47 0 STRESS: ENDURANCE CY8C24494 (8C24494A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24795A) 9623716 610639349 SEOL-L COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 STRESS: Failure Mechanism ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 12 Document No.001-88012 Rev. *A ECN # 4407380 Reliability Test Data QTP #: 060605 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 COMP 3 0 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.5V, +/-200mA) CY8C24494 (8C24494A) 9623716 CY8C24494 (8C24994A) 9621713 CY8C24494 (8C24494A) 9623715 610638054 SEOL-L COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 PHIL-M COMP 2 0 STRESS: PHIL-M C-USA COMP DYNAMIC LATCH-UP (125C, 8.5V) CY8C24494 (8C24494A) STRESS: 610639767 9621713 610632687 HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 96 1005 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 96 1144 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 96 908 1 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767A PHIL-M 1000 180 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 80 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 80 0 45 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 5.5V CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 12 CAPACITOR DEFECT Document No.001-88012 Rev. *A ECN # 4407380 Reliability Test Data QTP #: 060605 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 128 49 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 288 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 47 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 288 50 0 STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 500 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 500 49 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 12 Document No.001-88012 Rev. *A ECN # 4407380 Reliability Test Data QTP #: 070505 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej CY8C20334 (8C203345A) 4736795 610756411 PHIL-M 500 39 0 CY8C20334 (8C203345A) 4736795 610756411 PHIL-M 1000 39 0 CY8C20334 (8C203345A) 4736795 610756412 PHIL-M 500 42 0 CY8C20334 (8C203345A) 4736795 610756412 PHIL-M 1000 42 0 CY8C20334 (8C203345A) 4736795 610756411 PHIL-M COMP 47 0 CY8C20334 (8C203345A) 4736795 610756412 PHIL-M COMP 40 0 PHIL-M COMP 9 0 STRESS: STRESS: ENDURANCE ESD-CHARGE DEVICE MODEL, (500V) CY8C20334 (8C203345A) STRESS: 4736795 610756411 ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, (2,200V) CY8C20334 (8C203345A) 4736795 610756411 PHIL-M COMP 4 0 CY8C20334 (8C203345A) 4736795 610756412 PHIL-M COMP 4 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C20334 (8C203345A) 4736795 610756411 PHIL-M 96 511 0 CY8C20334 (8C203345A) 4736795 610756412 PHIL-M 96 511 0 STRESS: Failure Mechanism DATA RETENTION, PLASTIC, 150C HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C20334 (8C203345A) 4736795 610756412 PHIL-M 168 90 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.3V, +/-200mA) CY8C20334 (8C203345A) 4736795 610756411 PHIL-M COMP 3 0 CY8C20334 (8C203345A) 4736795 610756412 PHIL-M COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 12 Document No.001-88012 Rev. *A ECN # 4407380 Reliability Test Data QTP #: 081803 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: SORT YIELD 8C200005AK STRESS: 5821013 COMPARABLE 5821013 COMPARABLE ETEST YIELD 8C200005AK Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 12 Document No.001-88012 Rev. *A ECN # 4407380 Document History Page Document Title: QTP # 070505 : PSoC™ QUARK DEVICE FAMILY (CY8C20000/CY8C20234/334/434/534, CY8C20224/324/424/524) , S4AD-5 TECHNOLOGY, FAB 5 Document Number: 001-88012 Rev. ECN Orig. of No. Change ** 4033646 ILZ *A 4407380 HSTO Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo HGA-828 and not in spec format. Initiated spec for QTP 070505 and all data from Memo HGA-828 was transferred to qualification report spec template. Deleted package qualification details on package qualification history table. Deleted Cypress reference Spec and replaced with Industry Standards Updated package availability based on current qualified test & assembly site. Align qualification report based on the new template in the front page. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 12