Document No. 001-99425 Rev. ** ECN #: 4994570 Cypress Semiconductor Automotive Product Qualification Report QTP#151103 VERSION ** October 2015 Automotive PSoC Radon Device Family S4AD-5, Fab4 Automotive PSoC® CY8C24894 PROGRAMMABLE SYSTEM-ON-CHIP FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Rene Rodgers Reliability Manager Approved By: Don Darling Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 13 Document No. 001-99425 Rev. ** ECN #: 4994570 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 054603 PSoC Device Family on Automotive Technology S4AD-5, Fab4 Oct 06 092201 Qualify CY8C24894-24LFXA Radon Automotive Device at FAB4 Site, S4AD Technology Dec 09 151103 Qualify Mask Change for the Automotive Radon Device at CMI (Fab4) using S4AD Technology Oct 15 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 13 Document No. 001-99425 Rev. ** ECN #: 4994570 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Marketing Part #: Qualify CY8C24894-24LFXA Radon Automotive Device at FAB4 Site, S4AD Technology CY8C24894 Device Description: 3.3V Automotive 24MHz Programmable System on Chip Cypress Division: Cypress Semiconductor Corporation – Programmable System Division (PSD) TECHNOLOGY/FAB PROCESS DESCRIPTION – S4AD-5 Number of Metal Layers: 2 Metal Metal 1: 500Å Ti /6000Å Al / 300Å TiW Composition: Metal 2: 500Å Ti /8000Å Al / 300Å TiW Passivation Type and Materials: 7000Å Oxide TeOs / 6000Å Nitride Generic Process Technology/Design Rule (-drawn): Single Poly, Double Metal, 0.35 um Gate Oxide Material/Thickness (MOS): SiO2, 110Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4, S4AD-5 CMI, Sonos PACKAGE AVAILABILITY PACKAGE 56-Lead QFN ASSEMBLY FACILITY SITE Amkor-Seoul Korea (SEOUL-L) Company Confidential A printed copy of this document is considered uncontrolled. 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Page 3 of 13 Document No. 001-99425 Rev. ** ECN #: 4994570 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: LY56 Package Outline, Type, or Name: 56-Lead QFN Mold Compound Name/Manufacturer: Hitachi EME-G700 Mold Compound Flammability Rating: V-O per UL94 Mold Compound Alpha Emission Rate: N/A Oxygen Rating Index: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: Ni-Pd-Au Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Wafer Saw Die Attach Supplier: Ablestik Die Attach Material: 8290 Die Attach Method: Epoxy Bond Diagram Designation: 001-50786 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 23C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 001−16573 Name/Location of Assembly (prime) facility: Amkor-Korea (L) MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other packages availability. 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Page 4 of 13 Document No. 001-99425 Rev. ** ECN #: 4994570 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Early Failure Rate NVM Endurance /High Temperature Operating Life Latent Failure Rate Test Condition (Temp/Bias) AEC-Q100-008 and JESD22-A108 Dynamic Operating Condition, Vcc Max = 5.5V, 125C AEC-Q100-005 and JESD22-A108 Result P/F P P Dynamic Operating Condition, Vcc Max = 5.5V, 125C High Accelerated Saturation Test (HAST) JESD22-A110, 130C, 5.25V, 85%RH Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C P Temperature Cycle JESD22-A104, -65C to 150C Precondition: JESD22-A113 Moisture Sensitivity MSL 3 P Pressure Cooker 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C JESD22-A102, 121C, 100%RH, 15 Psig Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C P High Temperature Storage JESD22-A103, 150 5C no bias P Electrostatic Discharge Human Body Model (ESD-HBM) AEC-Q100-002 500V/1000V/1500V/2000V P Electrostatic Discharge Charge Device Model (ESD-CDM) AEC-Q100-002 200V/500V/750V P Acoustic Microscopy JEDEC JSTD-020 P Lead Integrity JESD22-B105 P Wire Ball Shear AEC-Q100-001 P Wire Bond Pull Mil-Std 883, Method 2011 P Electrical Distribution AEC-Q100-009 P NVM Endurance/Data Retention AEC-Q100-005, 150C P External Visual MIL-PRF-38535, MILSTD-883, METHOD 2009 P Physical Dimensions JESD22-B100/108 P Solderability JESD22-B102 P Static Latch-up AEC-Q100-004, 125C, 5.79V, 100mA P AEC-Q100-004, 125C, 5.4V, 200mA, 6.5V, 240mA Low Temperature Operating Life -40C, 6.5V JESD22-A108 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 13 P Document No. 001-99425 Rev. ** ECN #: 4994570 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life1,2 Long Term Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 884 Devices 0 N/A N/A 0 PPM 0 0.7 55 33 FIT 500,712 HRs 1 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate.. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 1 Early Failure Rate was computed from QTPs 151103 2 Long Term Failure Rate was computed from QTPs 054603 LFR Data. 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Page 6 of 13 Document No. 001-99425 Rev. ** ECN #: 4994570 Reliability Test Data QTP #: Device 054603 Fab Lot # Assy Lot # Assy Loc Duration Samp Rej CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 5 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 5 0 4547386 610608768 PHIL-M COMP 60 0 4547386 610608768 PHIL-M COMP 60 0 4547386 610608768 PHIL-M COMP 5 0 Failure Mechanism STRESS: ACOUSTIC, MSL3 STRESS: LEAD INTEGRITY STRESS: BALL SHEAR CY8C29466 (8C29466A) STRESS: BOND PULL CY8C29466 (8C29466A) STRESS: CROSS SECTION CY8C29466 (8C29466A) STRESS: NVM ENDURANCE / DATA RETENTION TEST CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1008 79 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1008 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1008 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 1396 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 1299 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 1314 0 STRESS: EXTERNAL VISUAL STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 48 815 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 48 815 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 48 815 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1000 84 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1000 84 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1000 84 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 13 Document No. 001-99425 Rev. ** ECN #: 4994570 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 054603 Duration Samp Rej Failure Mechanism STRESS: NVM ENDURANCE / HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1032 82 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1032 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1032 80 0 PHIL-M COMP 3 0 PHIL-M COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 200V CY8C29466 (8C29466A) 4547386 610608768 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C29466 (8C29466A) 4547386 610608768 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 500V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,000V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,500V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 2,000V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: STATIC LATCH-UP TESTING, 125C, 5.79V, +/100mA CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 6 0 STRESS: ELECTRICAL DISTRIBUTION CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 30 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 30 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 30 0 STRESS: PHYSICAL DIMENSION CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 10 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 10 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 10 0 PHIL-M 1000 80 0 STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C CY8C29466 (8C29466A) 4547386 610608768 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 13 Document No. 001-99425 Rev. ** ECN #: 4994570 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 054603 Duration Samp Rej Failure Mechanism STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 96 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 168 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 96 79 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 168 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 96 76 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 168 76 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.25V, PRE COND 192 HR 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 128 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 96 78 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 128 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 96 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 128 78 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 500 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1000 75 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 500 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1000 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1000 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 15 0 STRESS: SOLDERABILITY STRESS: WETTING BALANCE CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 3 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 13 Document No. 001-99425 Rev. ** ECN #: 4994570 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 092201 Duration Samp Rej Failure Mechanism STRESS: ESD-CHARGE DEVICE MODEL, 200V CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L COMP 3 0 SEOUL-L COMP 3 0 SEOUL-L COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C24894 (8A24894AC) 4846168 610904365 STRESS: ESD-CHARGE DEVICE MODEL, 750V CY8C24894 (8A24894AC) 4846168 610904365 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 500V CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L STRESS:ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,000V CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,500V CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 2,000V CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L COMP 3 0 STRESS: E-TEST DISTRIBUTION CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L COMP 30 0 CY8C24894 (8A24894AC) 4846833 610904364 SEOUL-L COMP 30 0 CY8C24894 (8A24894AC) 4844525 610905172 SEOUL-L COMP 30 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L 48 3496 0 CY8C24894 (8A24894AC) 4846833 610904364 SEOUL-L 48 3515 0 CY8C24894 (8A24894AC) 4844525 610905172 SEOUL-L 48 3495 0 COMP 6 0 COMP 6 0 STRESS: STATIC LATCH-UP TESTING, 125C, 5.4V, +/200mA CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L STRESS: STATIC LATCH-UP TESTING, 125C, 6.5V, +/240mA CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 13 Document No. 001-99425 Rev. ** ECN #: 4994570 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 092201 Duration Samp Rej Failure Mechanism STRESS: ELECTRICAL DISTRIBUTION CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L COMP 30 0 CY8C24894 (8A24894AC) 4846833 610904364 SEOUL-L COMP 30 0 CY8C24894 (8A24894AC) 4844525 610905172 SEOUL-L COMP 30 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 13 Document No. 001-99425 Rev. ** ECN #: 4994570 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 151103 Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C24894 (8A24894CC) 4512896 611520078 ASE-G 96 884 0 611520078 ASE-G COMP 30 0 STRESS: ELECTRICAL DISTRIBUTION CY8C24894 (8A24894CC) 4512896 STRESS: ESD-CHARGE DEVICE MODEL CY8C24894 (8A24894CC) 4512896 611520078 ASE-G 250 3 0 CY8C24894 (8A24894CC) 4512896 611520078 ASE-G 500 3 0 CY8C24894 (8A24894CC) 4512896 611520078 ASE-G 750 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B CY8C24894 (8A24894CC) 4512896 611520078 ASE-G 500 3 0 CY8C24894 (8A24894CC) 4512896 611520078 ASE-G 1000 3 0 CY8C24894 (8A24894CC) 4512896 611520078 ASE-G 2000 3 0 STRESS: LOW TEMPERATURE OPERATING LIFE (-40C, 6.5V) CY8C24894 (8C24894CC) 4512896 611515052 CML-RA 220 200 0 CY8C24894 (8C24894CC) 4512896 611515052 CML-RA 380 200 0 CY8C24894 (8C24894CC) 4512896 611515052 CML-RA 500 200 0 CY8C24894 (8C24894CC) 4512896 611515058 CML-RA 220 75 0 CY8C24894 (8C24894CC) 4512896 611515058 CML-RA 380 75 0 CY8C24894 (8C24894CC) 4512896 611515058 CML-RA 500 75 0 CY8C24894 (8C24894CC) 4512896 611515051 CML-RA 220 75 0 CY8C24894 (8C24894CC) 4512896 611515051 CML-RA 380 75 0 CY8C24894 (8C24894CC) 4512896 611515051 CML-RA 500 75 0 COMP 6 0 STRESS: STATIC LATCH-UP TESTING, 125C, 5.4V, +/140mA CY8C24894 (8A24894CC) 4512896 611520078 ASE-G Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 13 Document No. 001-99425 Rev. ** ECN #: 4994570 Document History Page Document Title: Document Number: QTP#151103: AUTOMOTIVE PSOC RADON DEVICE CY8C24894 FAMILY S4AD-5, FAB4 001-99425 Rev. ECN Orig. of No. Change ** 4994570 HSTO Description of Change Initial spec release Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 13