Document No. 001-66930 Rev. *E ECN #: 4662479 Cypress Semiconductor Automotive Product Qualification Report QTP# 102802 VERSION*E February, 2015 PSoC Device Family Automotive Technology S4AD-5, Fab4 CY8C21312 CY8C21512 PSoC Mixed Signal Array Automotive A-Grade CY8C21312 CY8C21512 PSoC Mixed Signal Array Automotive E-Grade FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda (JYF) Reliability Engineer Reviewed By: Rene Rodgers (RT) Reliability Manager Approved By: Richard Oshiro (RGO) Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 15 Document No. 001-66930 Rev. *E ECN #: 4662479 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 054603 PSoC Device Family on Automotive Technology S4AD-5, Fab4 Oct 06 074606 Qualify Automotive PSoC Neutron Device (CY8C21x34), S4AD-5 Technology, Fab 4 Apr 08 082003 Qualify new MM2 mask on Automotive Neutron (8A21001AC), S4AD-5 Technology, Fab4 Oct 08 102802 Qualify Automotive Neutron Lite Device (CY8C21x12) S4AD-5 Technology, Fab4 Jul 10 123105 Qualify Automotive Neutron Lite E-Grade Device (CY8C21x12) S4AD-5 Technology, Fab4 Aug 12 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 15 Document No. 001-66930 Rev. *E ECN #: 4662479 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Automotive Marketing Part #: Device Description: Cypress Division: Qualify Automotive Neutron Lite Device (CY8C21x12), S4AD-5 Technology, Fab 4 CY8C21512-24PVXA, CY8C21312-24PVXA, CY8C21512-12PVXE, CY8C21312-12PVXE 3.3 and 5V Automotive 12MHz Programmable System on Chip available in 20/28 SSOP Memory Product Division TECHNOLOGY/FAB PROCESS DESCRIPTION – S4AD-5 Number of Metal Layers: 2 Metal Composition: Passivation Type and Materials: Generic Process Technology/Design Rule ( -drawn): Gate Oxide Material/Thickness (MOS): Name/Location of Die Fab (prime) Facility: Die Fab Line ID/Wafer Process ID: Metal 1: 500Å Ti /6000Å Al 0.5% Cu/ 1200Å TiW Metal 2: 500Å Ti /8000Å Al 0.5% Cu/ 300Å TiW 3000A TeOs / 6,000A Si3N4 Single Poly, Double Metal, 0.35um SiO2, 110Å Cypress Semiconductor – Bloomington, MN Fab4, S4AD-5 CMI, Sonos PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 28/20-Lead SSOP PHIL-M Note: Package Qualification included in this report Company Confidential A printed copy of this document is considered uncontrolled. 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Page 3 of 15 Document No. 001-66930 Rev. *E ECN #: 4662479 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: SP28 Package Outline, Type, or Name: 28-Lead SSOP Mold Compound Name/Manufacturer: Sumitomo EME-G600 Mold Compound Flammability Rating: V-O per UL94 Oxygen Rating Index: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Ablestik Die Attach Material: 8290 Die Attach Method: Epoxy Bond Diagram Designation: N/A Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 39°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 001−09888 Name/Location of Assembly (prime) facility: Amkor Phil (M) MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other packages availability. 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Page 4 of 15 Document No. 001-66930 Rev. *E ECN #: 4662479 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Early Failure Rate NVM Endurance /High Temperature Operating Life Latent Failure Rate Test Condition (Temp/Bias) AEC-Q100-008 and JESD22-A108 Dynamic Operating Condition, Vcc Max = 5.5V, 125°C AEC-Q100-005 and JESD22-A108 Dynamic Operating Condition, Vcc Max = 5.5V, 125°C Result P/F P P High Accelerated Saturation Test (HAST) JESD22-A110, 130C, 5.25V, 85%RH Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C P Temperature Cycle JESD22-A104, -65°C to 150°C Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C JESD22-A102, 121C, 100%RH, 15 Psig Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C P Pressure Cooker P High Temperature Storage JESD22-A103, 150 ± 5°C no bias P Electrostatic Discharge Human Body Model (ESD-HBM) AEC-Q100-002 500V/1000V/1500V/2000V/4000V/6000/8000V P Electrostatic Discharge Charge Device Model (ESD-CDM) AEC-Q100-003 P Acoustic Microscopy JEDEC JSTD-020 P Lead Integrity JESD22-B105 P Wire Ball Shear AEC-Q100-001 P Wire Bond Pull Mil-Std 883, Method 2011 P Electrical Distribution AEC-Q100-009 P NVM Endurance/Data Retention AEC-Q100-005, 150C P External Visual MIL-PRF-38535, MILSTD-883, METHOD 2009, P Physical Dimensions JESD22-B100/108 P Solderability JESD22-B102 P Static Latch-up AEC-Q100-004, 125C, 7.88V, ± 100mA P Electrostatic Discharge 50V, 100V, 150V, 200V P Machine Model (ESD-MM) JEDEC EIA/JESD22-A155 250V/500V Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 15 Document No. 001-66930 Rev. *E ECN #: 4662479 RELIABILITY FAILURE RATE SUMMARY Stress/Test NVM Endurance / High Temperature Operating Life Early Failure Rate 1,2 High Temperature Operating Life Long Term Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 10,368 Devices 0 N/A N/A 0 PPM 500,712 HRs 0 0.7 55 33 FIT 1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate.. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 6 of 15 Document No. 001-66930 Rev. *E ECN #: 4662479 Reliability Test Data QTP #: Device 054603 Fab Lot # Assy Lot # Assy Loc Duration Samp Rej CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 5 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 5 0 4547386 610608768 PHIL-M COMP 60 0 4547386 610608768 PHIL-M COMP 60 0 4547386 610608768 PHIL-M COMP 5 0 Failure Mechanism STRESS: ACOUSTIC, MSL3 STRESS: LEAD INTEGRITY STRESS: BALL SHEAR CY8C29466 (8C29466A) STRESS: BOND PULL CY8C29466 (8C29466A) STRESS: CROSS SECTION CY8C29466 (8C29466A) STRESS: NVM ENDURANCE / DATA RETENTION TEST CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1008 79 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1008 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1008 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 1396 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 1299 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 1314 0 STRESS: EXTERNAL VISUAL STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 48 815 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 48 815 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 48 815 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1000 84 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1000 84 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1000 84 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 7 of 15 Document No. 001-66930 Rev. *E ECN #: 4662479 Reliability Test Data QTP #: 054603 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: NVM ENDURANCE / HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1032 82 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1032 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1032 80 0 PHIL-M COMP 3 0 PHIL-M COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 200V CY8C29466 (8C29466A) 4547386 610608768 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C29466 (8C29466A) 4547386 610608768 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 500V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,000V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,500V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 2,000V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: STATIC LATCH-UP TESTING, 125C, 5.79V, +/100mA CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 6 0 STRESS: ELECTRICAL DISTRIBUTION CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 30 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 30 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 30 0 STRESS: PHYSICAL DIMENSION CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 10 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 10 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 10 0 PHIL-M 1000 80 0 STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C CY8C29466 (8C29466A) 4547386 610608768 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 15 Document No. 001-66930 Rev. *E ECN #: 4662479 Reliability Test Data QTP #: 054603 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 96 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 168 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 96 79 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 168 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 96 76 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 168 76 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.25V, PRE COND 192 HR 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 128 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 96 78 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 128 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 96 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 128 78 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 500 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1000 75 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 500 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1000 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1000 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 15 0 STRESS: SOLDERABILITY STRESS: WETTING BALANCE CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 3 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 15 Document No. 001-66930 Rev. *E ECN #: 4662479 Reliability Test Data QTP #: 082003 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej 610835849 PHIL-M COMP 4822571 N/A N/A COMPARABLE 4822571 N/A N/A COMPARABLE 610835849 PHIL-M 1008 92 0 PHIL-M COMP 3 0 PHIL-M COMP 3 0 PHIL-M COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 6 0 COMP 6 0 Failure Mechanism STRESS: E-TEST DISTRIBUTION CY8C21534 (8A21534A) 4822571 30 0 STRESS: E-TEST YIELD CY8C21534 (8A21534A) STRESS: SORT YIELD CY8C21534 (8ª21534A) STRESS: ENDURANCE CY8C21534 (8ª21534A) 4822571 STRESS: ESD-CHARGE DEVICE MODEL, 250V CY8C21534 (8ª21534A) 4822571 610835849 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C21534 (8A21534A) 4822571 610835849 STRESS: ESD-CHARGE DEVICE MODEL, 750V CY8C21534 (8A21534A) 4822571 610835849 STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 500V CY8C21534 (8A21534A) 4822571 610835849 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 1000V CY8C21534 (8A21534A) 4822571 610835849 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 1500V CY8C21534 (8A21534A) 4822571 610835849 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 2000V CY8C21534 (8A21534A) 4822571 610835849 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 4000V CY8C21534 (8A21534A) 4822571 610835849 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 6000V CY8C21534 (8A21534A) 4822571 610835849 PHIL-M STRESS: STATIC LATCH-UP TESTING, 125C, 7.88V, +/200mA CY8C21534 (8A21534A) 4822571 610835849 PHIL-M STRESS: STATIC LATCH-UP TESTING, 125C, 8.66V, +/240mA CY8C21534 (8A21534A) 4822571 610835849 PHIL-M Company Confidential A printed copy of this document is considered uncontrolled. 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Page 10 of 15 Document No. 001-66930 Rev. *E ECN #: 4662479 Reliability Test Data QTP #: 102802 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ELECTRICAL DISTRIBUTION CY8C21534 (8A21534A) 4718135 610766718 PHIL-M COMP 30 0 CY8C21534 (8A21534A) 4740198 610801109 PHIL-M COMP 30 0 CY8C21534 (8A21534A) 4744769 610801110 PHIL-M COMP 30 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C21534 (8A21534A) 4718135 610766718 PHIL-M 48 3841 0 CY8C21534 (8A21534A) 4740198 610801109 PHIL-M 48 3592 0 CY8C21534 (8A21534A) 4744769 610801110 PHIL-M 48 4228 0 PHIL-M COMP 3 0 PHIL-M COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 6 0 STRESS: ESD-CHARGE DEVICE MODEL, 250V CY8C21534 (8A21534A) 4718135 610766718 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C21534 (8A21534A) 4718135 610766718 STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 500V CY8C21534 (8A21534A) 4718135 610766718 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 1,000V CY8C21534 (8A21534A) 4718135 610766718 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 1,500V CY8C21534 (8A21534A) 4718135 610766718 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 2,000V CY8C21534 (8A21534A) 4718135 610766718 PHIL-M STRESS: STATIC LATCH-UP TESTING, 125C, 7.88V, +/100mA CY8C21534 (8A21534A) 4718135 610766718 PHIL-M Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 15 Document No. 001-66930 Rev. *E ECN #: 4662479 Reliability Test Data QTP #: ER133017 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej 610766718 PHIL-M COMP 3 0 610766718 PHIL-M COMP 3 0 610766718 PHIL-M COMP 3 0 610766718 PHIL-M COMP 3 0 Failure Mechanism STRESS: ESD-MACHINE MODEL, 50V CY8C21312 (8A21312AC) 4234566 STRESS: ESD-MACHINE MODEL, 100V CY8C21312 (8A21312AC) 4234566 STRESS: ESD-MACHINE MODEL, 150V CY8C21312 (8A21312AC) 4234566 STRESS: ESD-MACHINE MODEL, 200V CY8C21312 (8A21312AC) 4234566 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 15 Document No. 001-66930 Rev. *E ECN #: 4662479 Reliability Test Data QTP #: ER134036 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 50V CY8C21512 (8A21512AC) 4221630 611234362 PHIL-M COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 1000V CY8C21512 (8A21512AC) 4221630 611234362 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 1,500V CY8C21512 (8A21512AC) 4221630 611234362 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 2,000V CY8C21512 (8A21512AC) 4221630 611234362 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 4,000V CY8C21512 (8A21512AC) 4221630 611234362 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 6,000V CY8C21512 (8A21512AC) 4221630 611234362 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 8,000V CY8C21512 (8A21512AC) 4221630 611234362 PHIL-M Company Confidential A printed copy of this document is considered uncontrolled. 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Page 13 of 15 Document No. 001-66930 Rev. *E ECN #: 4662479 Reliability Test Data QTP #: ER134037 STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 500V CY8C21312 (8A21312AC) 4319610 611334705 PHIL-M COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 1000V CY8C21312 (8A21312AC) 4319610 611334705 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 1,500V CY8C21312 (8A21312AC) 4319610 611334705 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 2,000V CY8C21312 (8A21312AC) 4319610 611334705 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 4,000V CY8C21312 (8A21312AC) 4319610 611334705 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 6,000V CY8C21312 (8A21312AC) 4319610 611334705 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 8,000V CY8C21312 (8A21312AC) 4319610 611334705 PHIL-M Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 15 Document No. 001-66930 Rev. *E ECN #: 4662479 Document History Page Document Title: QTP 102802: PSoC Device Family (CY8C21x12) Automotive Technology S4AD-5, Fab4 Qualification Report 001-66930 Document Number: Rev. ECN No. ** 3155213 *A 3466480 Orig. of Change NRG NSR *B 3721339 NSR *C *D 4088134 HSTO 4205039 HSTO *E 4662479 JYF Description of Change Initial Spec Release Sunset Review Removed obsolete spec 24-00002 Removed QTP version 1.0 in the title page. Added QTP 123105 and E-graded devices CY8C21512-12PVXE and CY8C21312-12PVXE. Removed obsolete Bond diagram specs 001-13283. Removed the reference Cypress specs on the reliability tests performed table and reflect only the reference industry standards. Added ER133017 with ESD-MM data as Customer request. Added ESD-HBM test result data for below devices; - CY8C21512-12PVXE (Ref. #ER134036). - CY8C21312-12PVXE (Ref. #ER134037). Sunset review: Updated QTP title page for template alignment; Updated device division from MID to MPD. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 15 of 15