Document No. 001-74489 Rev. *B ECN #: 4611800 Cypress Semiconductor Product Qualification Report QTP 114902 VERSION*B January 2015 Touch Screen PSoC Device Family S8TMC-5R, Fab 3 HHGrace CY8CTMA140 TRUETOUCH(TM) MULTI-TOUCH ALL-POINTS TOUCHSCREEN CONTROLLER FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 12 Document No. 001-74489 Rev. *B ECN #: 4611800 PRODUCT QUALIFICATION HISTORY QTP Number 090706 114902 Description of Qualification Purpose Qualification of Capsense (CY8C20X36A, CY8C20X46A, CY8C20X66A, CY8C20X96A) Device in Fab 5 GSMC on S8DIN-5R Process Qualification of Touch Screen PSoC Device (CY8CTMA140) in S8TMC5R Process at GSMC Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 12 Date Mar 10 Dec 11 Document No. 001-74489 Rev. *B ECN #: 4611800 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualification of Touch Screen PSoC Device in S8TMC-5R Process at Fab3, HHGrace Marketing Part #: CY8CTMA140 Device Description: Capacitive touchscreen controller Cypress Division: Cypress Semiconductor Corporation – Programmable System Division (PSD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 3 Metal Composition: Passivation Type and Thickness: Metal 1: 150A Ti/250A TiN/3200A Al/90A Ti/500A TiN Metal 2: 150A Ti/250A TiN/3200A Al/90A Ti/500A TiN Metal 3: 190A Ti/450A TiN/21250A Al/90A Ti/200A TiN 1000A TEOS/9000A Si3N4 Generic Process Technology/Design Rule (-drawn): 1P3M, 0.13 m Gate Oxide Material/Thickness (MOS): SiO2 / 110A & SiO2 / 32A Name/Location of Die Fab (prime) Facility: Fab 3 / HHGrace, Shanghai China Die Fab Line ID/Wafer Process ID: S8TMC-5R PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 36 QFN CML-RA , Amkor-MB 48 QFN CML-RA, Amkor-MB Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 12 Document No. 001-74489 Rev. *B ECN #: 4611800 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: LT48 Package Outline, Type, or Name: 48 Quad Flat No Lead (QFN) Mold Compound Name/Manufacturer: Nitto 7470-LA Mold Compound Flammability Rating: UL94 – V0 Oxygen Rating Index: None Lead Frame Material: Copper Lead Finish, Composition / Thickness: Die Backside Preparation Method/Metallization: NiPdAu-Ag Die Separation Method: 100% Saw Die Attach Supplier: Dexter Die Attach Material: AMK-06 Die Attach Method: Epoxy Bond Diagram Designation: 001-50201 Wire Bond Method: Thermosonic Wire Material/Size: Au-Pd / 0.8 mil Thermal Resistance Theta JA °C/W: 18.69 Package Cross Section Yes/No: N/A Assembly Process Flow: 001-52216 Name/Location of Assembly (prime) facility: Amkor P3 (MB) MSL Level 3 Reflow Profile 260C Backgrind ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-RA Note: Please contact a Cypress Representative for other package availability. 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Page 4 of 12 Document No. 001-74489 Rev. *B ECN #: 4611800 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc Max=2.1V, 150C Dynamic Operating Condition, Vcc Max=2.07V, 150C P High Temperature Operating Life Early Failure Rate (Regulator On) Dynamic Operating Condition, Vcc Max=5.5V, 150C P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max=2.1V, 150C Dynamic Operating Condition, Vcc Max=2.07V, 150C P High Temperature Steady State life 150C, 5,75V, Vcc Max P Low Temperature Operating Life -30C, 2.1V P High Accelerated Saturation Test (HAST) 130C, 5.25V, 5.5V, 85%RH Precondition: JESD22 Moisture Sensitivity Level 3 P Dynamic Operating Condition, Vcc Max=2.07V, 150C 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65C to 150C Precondition: JESD22 Moisture Sensitivity Level 3 P 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C 121C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity Level 3 Pressure Cooker P 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C Acoustic Microscopy J-STD-020 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Data Retention 150C 5C No Bias P Dynamic Latch-up 150C, 9.0V P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V P Endurance Test JESD22-A117 P Static Latch-up 140mA, 85C, 8.25V, Except pins 8, 9, 10 90mA P JESD22-C101 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 12 Document No. 001-74489 Rev. *B ECN #: 4611800 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate 1,2 High Temperature Operating Life Long Term Failure Rate Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 6,568 Devices 0 N/A N/A 0 PPM 737,000 DHRs 0 0.7 170 7 FIT 1 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 12 Document No. 001-74489 Rev. *B ECN #: 4611800 Reliability Test Data QTP #: 090706 Device Fab Lot # Assy Lot # Assy Lot Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY8C20466A (8C204665A) 4926959 610927071 CML-RA COMP 15 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA COMP 15 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA COMP 15 0 CY8C20466A (8C204665A) 4926959 610927071 CML-RA COMP 3 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA COMP 3 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA COMP 3 0 STRESS: AGE BOND STRENGTH STRESS: DATA RETENTION, PLASTIC, 150C CY8C20466A (8C204665A) 4926959 610927071 CML-RA 500 77 0 CY8C20466A (8C204665A) 4926959 610927071 CML-RA 1000 77 0 CY8C20466A (8C204665A) 4926959 610927071 CML-RA 1446 77 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA 500 80 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA 1000 80 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA 500 80 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA 1000 80 0 CY8C20566A (8C205665A) 4926959 610926865 CML-R 168 77 0 CY8C20566A (8C205665A) 4926959 610926865 CML-R 524 77 0 CY8C20566A (8C205665A) 4934292 610931057 CML-R 168 78 0 CY8C20566A (8C205665A) 4938497 610935104 CML-R 168 77 0 STRESS: ENDURANCE STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C20066A (8C200665A) 4926959 610926836 Malaysia-CA COMP 9 0 CY8C20066A (8C200665A) 4934292 610932270 Malaysia-CA COMP 9 0 CY8C20066A (8C200665A) 4938497 610935356 Malaysia-CA COMP 9 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 12 Document No. 001-74489 Rev. *B ECN #: 4611800 Reliability Test Data QTP #: 090706 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C20066A (8C200665A) 4926959 610926836 Malaysia-CA COMP 8 0 CY8C20066A (8C200665A) 4934292 610932270 Malaysia-CA COMP 8 0 CY8C20066A (8C200665A) 4938497 610935356 Malaysia-CA COMP 8 0 STRESS: STATIC LATCH-UP (125C, 8.25V, 140mA) CY8C20066A (8C200665A) 4926959 610926836 Malaysia-CA COMP 6 0 CY8C20066A (8C200665A) 4934292 610932270 Malaysia-CA COMP 6 0 CY8C20066A (8C200665A) 4938497 610935356 Malaysia-CA COMP 6 0 CML-RA 5 0 STRESS: DYNAMIC LATCH-UP (150C, 9.0V) CY8C20466A (8C204665A) 4926959 610927071 COMP STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max) CY8C20466A (8C204665A) 4926959 610927071 CML-RA 48 1000 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA 48 1000 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA 48 1000 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 5.5V, Vcc Max) CY8C20466A (8C204665A) 4926959 610927071 CML-RA 48 45 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.1V, Vcc Max) CY8C20466A (8C204665A) 4926959 610927071 CML-RA 80 400 0 CY8C20466A (8C204665A) 4926959 610927071 CML-RA 500 399 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA 500 444 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA 80 400 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA 500 400 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.75V) CY8C20466A (8C204665A) 4926959 610927071 CML-RA 80 77 0 CY8C20466A (8C204665A) 4926959 610927071 CML-RA 168 77 0 500 83 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 2.1V CY8C20566A (8C205665A) 4926959 610926865 CML-R Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 12 Document No. 001-74489 Rev. *B ECN #: 4611800 Reliability Test Data QTP #: 090706 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3) CY8C20466A (8C204665A) 4948407GSMC610946935 CML-RA 128 80 0 CY8C20466A (8C204665A) 4948407A2 610947114 CML-RA 128 80 0 CY8C20466A (8C204665A) 4948407A3 611002233 CML-RA 128 80 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY8C20466A (8C204665A) 4948407GSMC610946935 CML-RA 168 80 0 CY8C20466A (8C204665A) 4948407A2 610947114 CML-RA 168 80 0 CY8C20466A (8C204665A) 4948407A3 611002233 CML-RA 168 80 0 STRESS: TC COND. C –65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY8C20466A (8C204665A) 4926959 610927071 CML-RA 500 76 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA 500 80 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA 1000 80 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA 500 80 0 610931047 CML-RA COMP 1 0 STRESS: SEM CROSS SECTION CY8C20066A (8C20066AC) 4934292 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 12 Document No. 001-74489 Rev. *B ECN #: 4611800 Reliability Test Data QTP #:114902 Device Fab Lot # Assy Lot # Assy Lot Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY8CTMA140 4016083 611028818 MB-PHIL COMP 15 0 CY8CTMA140 4016083 611028819 MB-PHIL COMP 15 0 CY8CTMA140 4021994 611028331 MB-PHIL COMP 15 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8CTMA140 4016083 611021260 MB-PHIL 500 77 0 CY8CTMA140 4016083 611021260 MB-PHIL 1000 77 0 CY8CTMA140 4016083 611021260 MB-PHIL 1500 77 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 2.07V, Vcc Max) CY8CTMA140 4016083 611021260 MB-PHIL 48 500 0 CY8CTMA140 4016083 611028818 MB-PHIL 48 1540 0 CY8CTMA140 4021994 611028331 MB-PHIL 48 1528 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150C, 2.07V, Vcc Max) CY8CTMA140 4021994 611028331 MB-PHIL 48 50 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max) CY8CTMA140 4016083 611028818 MB-PHIL 80 118 0 CY8CTMA140 4016083 611028818 MB-PHIL 500 116 0 CY8CTMA140 4021994 611028331 MB-PHIL 80 116 0 CY8CTMA140 4021994 611028331 MB-PHIL 500 115 0 CY8CTMA140 4016083 611021260 MB-PHIL 168 80 0 CY8CTMA140 4016083 611021260 MB-PHIL 500 80 0 STRESS: ENDURANCE STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8CTMA140 4016083 611021260 MB-PHIL COMP 9 0 CY8CTMA140 4021994 611028331 MB-PHIL COMP 9 0 8 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8CTMA140 4021994 611028331 MB-PHIL COMP Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 12 Document No. 001-74489 Rev. *B ECN #: 4611800 Reliability Test Data QTP #:114902 Device Fab Lot # Assy Lot # Assy Lot Duration Samp Rej Failure Mechanism STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.5V), PRE COND 192 HR 30C/60%RH (MSL3) CY8CTMA140 4021994 611028331 MB-PHIL 128 8 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY8CTMA140 4016083 611021260 MB-PHIL 168 80 0 CY8CTMA140 4021994 611028331 MB-PHIL 168 80 0 MB-PHIL COMP 6 0 STRESS: STATIC LATCH-UP (85C, 8.25V, 90mA) CY8CTMA140 4021994 611028331 STRESS: TC COND. C –65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY8CTMA140 4016083 611028818 MB-PHIL 500 80 0 CY8CTMA140 4016083 611028819 MB-PHIL 500 80 0 CY8CTMA140 4021994 611028331 MB-PHIL 500 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 12 Document No. 001-74489 Rev. *B ECN #: 4611800 Document History Page Document Title: Document Number: QTP 114902: CY8CTMA140 ON S8TMC TECHNOLOGY IN FAB 3, HHGrace 001-74489 Rev. ECN Orig. of No. Change ** 3458327 FDW Description of Change *A 4184245 HSTO *B 4611800 HSTO Sunset Review Updated Principal Reliability Engineer Contact to Zhaomin Ji. Removed reference Cypress spec (25-00104, 25-00020, & 25-00009) in the reliability test performed table and replaced reference Industry standard. Align qualification report based on the new template in the front page Updated Fab site from Fab 5 GSMC to Fab 3 HHGrace in QTP title (page 1) and Product/Technology/Fab Description tables (page 3); Updated device division from CCD to PSD Initial Spec Release Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 12