QTP 093003:PSOC EMERALD DEVICE FAMILY, S4AD, FAB4

Document No. 001-87702 Rev. *C
ECN #4403815
Cypress Semiconductor
Product Qualification Report
QTP# 093003 VERSION*C
June, 2014
PSoC® Emerald Device Family
S4AD, Fab4
CY8C28243
CY8C28403
CY8C28413
CY8C28433
CY8C28445
CY8C28452
CY8C28513
CY8C28533
CY8C28545
CY8C28623
CY8C28643
CY8C28645
PSoC® Programmable Systemon-Chip
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Josephine Pineda
Reliability Engineer
Reviewed By:
Zhaomin Ji
Reliability Manager
Approved By:
Richard Oshiro
Reliability Director
Company Confidential
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Page 1 of 10
Document No. 001-87702 Rev. *C
ECN #4403815
PRODUCT QUALIFICATION HISTORY
QTP
Number
Description of Qualification Purpose
Date
052004
PSoC 8C21001A Neutron Product Family on SONOS S4AD-5 Technology,
Fab4
Aug 05
093003
PSoC CY8C28x45 Emerald Product Family on S4AD Technology, Fab4
Oct 09
Company Confidential
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Page 2 of 10
Document No. 001-87702 Rev. *C
ECN #4403815
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: Qualify new PSoC CY8C28x45 Emerald Device Family on S4AD Technology, Fab4
Device Description:
CY8C28243, CY8C28403, CY8C28413, CY8C28433, CY8C28445, CY8C28452,
CY8C28513, CY8C28533, CY8C28545, CY8C28623, CY8C28643, CY8C28645
PSOC (R) Programmable System-on-Chip
Cypress Division:
Cypress Semiconductor Corporation – Programmable Systems Division
Marketing Part #:
TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5
Number of Metal Layers:
2
Metal Composition: Metal 1: 500A TiW/6,000A Al /300A TiW
Metal 2: 500A TiW/8,000A Al /300A TiW
Passivation Type and Materials:
7,000A TEOS / 6,000A Si3N4
Generic Process Technology/Design Rule (-drawn): Single Poly, Double Metal, 0.35 m
Gate Oxide Material/Thickness (MOS):
SiO2 / 110A
Name/Location of Die Fab (prime) Facility:
Cypress Semiconductor - Minnesota
Die Fab Line ID/Wafer Process ID:
Fab 4, S4AD, SONOS
PACKAGE AVAILABILITY
PACKAGE
ASSEMBLY SITE FACILITY
20-Lead SSOP
CML-RA
28-Lead SSOP
CML-RA
56-Lead SSOP
JCET-CHINA (JT)
44- Lead TQFP
JCET-CHINA (JT)
48- Lead QFN
AMKOR-MB, ASE-TAIWAN (G), CML-RA
Note: Package Qualification details upon request.
Company Confidential
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Page 3 of 10
Document No. 001-87702 Rev. *C
ECN #4403815
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
Mold Compound Alpha Emission Rate:
SP28
28-Lead Shrunk Small Outline Package (SSOP)
Kyocera KEG3000DA-CY
V-O per UL94
N/A
Oxygen Rating Index:
70
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
NiPdAu
Die
Backside
Method/Metallization:
Backgrind
Preparation
Die Separation Method:
100% Saw
Die Attach Supplier:
Ablestik
Die Attach Material:
QMI 509
Die Attach Method:
Dispensing
Bond Diagram Designation:
001-49708, 001-49709
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au, 0.9mil
Thermal Resistance Theta JA °C/W:
95°C/W
Package Cross Section Yes/No:
No
Assembly Process Flow:
11-21099
Name/Location of Assembly (prime) facility:
CML-RA
MSL Level
3
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
Cypress Philippines (CML-R, CML-RA), KYEC-Taiwan
Note: Please contact a Cypress Representative for other package availability.
Company Confidential
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Page 4 of 10
Document No. 001-87702 Rev. *C
ECN #4403815
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition
(Temp/Bias)
Result
P/F
High Temperature Operating Life
Early Failure Rate
Dynamic Operating Condition, Vcc Max=5.5V/5.25V, 125C
JESD22-A108
P
High Temperature Operating Life
Latent Failure Rate
Dynamic Operating Condition, Vcc Max=5.5V/5.25V, 125C
JESD22-A108
P
High Accelerated Saturation Test
(HAST)
JESD22-A110:130C, 5.25V, 85%RH
Precondition: JESD22 Moisture Sensitivity Level 1
P
(168 Hrs, 85C/85%RH, 260C Reflow)
Temperature Cycle
MIL-STD-883, Method 1010, Condition C, -65C to 150C
Precondition: JESD22 Moisture Sensitivity Level 1
P
(168 Hrs, 85C/85%RH, 260C Reflow)
JESD22-A102: 121C, 100%RH, 15 Psig
Precondition: JESD22 Moisture Sensitivity Level 1
Pressure Cooker
P
(168 Hrs, 85C/85%RH, 260C Reflow)
150C  5C No Bias,
Data Retention
P
JESD22-A117 and JESD22-A103
High Temperature Steady State life
Static Operating Condition, Vcc Max= 5.5V, 125°C
P
JESD22-A108
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V
JESD22, Method A114
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V
MIL-STD-883, Method 3015.7
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V
JESD22-C101
P
Endurance Test
MIL-STD-883, Method 883-1033
P
Age Bond Strength
200C, 4hrs
MIL-STD-883, Method 883-2011
P
Low Temperature Operating Life
Dynamic Operating Condition, Vcc= 5.5V, -30 C,f =8MHz
P
JESD22-A108
SEM Analysis
MIL-STD-883, Method 883-2018-2
P
Acoustic Microscopy
J-STD-020
Precondition: JESD22 Moisture Sensitivity Level
(168 Hrs, 85C/85%RH, 260C Reflow)
P
Dynamic Latch up
125C, 8.3V, 9.5V
P
JESD78
Static Latch up
125C,  200mA,  240mA
JESD78
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Page 5 of 10
P
Document No. 001-87702 Rev. *C
ECN #4403815
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
High Temperature Operating Life
1
Early Failure Rate
1, 2
High Temperature Operating Life
Long Term Failure Rate
1
2
3
3
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
A.F
Failure Rate
1,727 Devices
0
N/A
N/A
0 PPM
708,750 DHRs
0
0 .7
55
23 FIT
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k T2 T1 
where:
EA =The Activation Energy of the defect mechanism.
-5
K = Boltzmann’s constant = 8.62x10 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the
device at use conditions.
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Page 6 of 10
Document No. 001-87702 Rev. *C
ECN #4403815
Reliability Test Data
QTP #: 052004
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL1
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
COMP
15
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
COMP
15
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
COMP
15
0
STRESS: AGE BOND STRENGTH
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
COMP
10
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
COMP
10
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
COMP
10
0
STRESS: DATA RETENTION, PLASTIC, 150C
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
500
256
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
1000
256
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
500
256
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
1000
254
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
500
252
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
1000
252
0
4516647
610521157
TAIWAN-T
COMP
45
0
STRESS: ENDURANCE
CY8C21534 (8C21534A)
STRESS: ESD-CHARGE DEVICE MODEL, (500V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
COMP
9
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWAN-T
COMP
9
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWAN-T
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
COMP
9
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWAN-T
COMP
9
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWAN-T
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
COMP
3
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWAN-T
COMP
3
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWAN-T
COMP
3
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max)
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
120
1002
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
120
1002
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
120
1002
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max)
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
750
235
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWAN-T
750
235
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWAN-T
750
235
0
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Page 7 of 10
Document No. 001-87702 Rev. *C
ECN #4403815
Reliability Test Data
QTP #: 052004
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
168
76
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
336
76
0
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1)
CY8C21234 (8C21234A)
4516647
610527569
PHIL-M
128
49
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
128
44
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
128
44
0
500
45
0
STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 5.5V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1)
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
168
45
0
CY8C21534 (8C21534A)
4516647
610521157
CY8C21234 (8C21234A)
4516674
610521849
TAIWAN-T
336
45
0
PHIL-M
168
45
0
CY8C21234 (8C21234A)
4516674
CY8C21234 (8C21234A)
4517851
610521849
PHIL-M
336
45
0
610522407
PHIL-M
168
45
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
336
45
0
STRESS: STATIC LATCH-UP TESTING (125C, 11V, 300mA)
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
COMP
3
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWAN-T
COMP
3
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWAN-T
COMP
3
0
610521157
TAIWAN-T
COMP
3
0
STRESS: DYNAMIC LATCH-UP (8.3V)
CY8C21534 (8C21534A)
4516647
STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1)
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
300
50
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
500
50
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
1000
50
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
300
45
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
1000
45
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
300
45
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
1000
44
0
3
0
STRESS: STATIC LATCH-UP TESTING (125C, 11V, 300mA)
CY8C21534 (8C21534A)
4516647
610521157
TAIWAN-T
COMP
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Page 8 of 10
Document No. 001-87702 Rev. *C
ECN #4403815
Reliability Test Data
QTP #: 093003
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: DYNAMIC LATCH-UP (125C, 9.5V, Vcc Max)
CY8C28623 (8C28623AC)
4929836
610930197
PHIL-MB
COMP
2
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.25V, Vcc Max)
CY8C28433 (8C28433AC)
4929836
610930316
CML-RA
96
573
0
CY8C28433 (8C28433AC)
4929836
610930317
CML-RA
96
588
0
CY8C28433 (8C28433AC)
4929836
610930318
CML-RA
96
566
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.25V, Vcc Max)
CY8C28433 (8C28433AC)
4929836
610930316
CML-RA
168
60
0
CY8C28433 (8C28433AC)
4929836
610930316
CML-RA
1000
60
0
CY8C28433 (8C28433AC)
4929836
610930317
CML-RA
168
60
0
CY8C28433 (8C28433AC)
4929836
610930317
CML-RA
1000
60
0
CY8C28433 (8C28433AC)
4929836
610930318
CML-RA
168
60
0
CY8C28433 (8C28433AC)
4929836
610930318
CML-RA
1000
60
0
CML-RA
168
77
0
CML-RA
COMP
9
0
STRESS: ENDURANCE DATA RETENTION
CY8C28433 (8C28433AC)
4929836
610930316
STRESS: ESD-CHARGE DEVICE MODEL, (500V)
CY8C28623-( 8C28623AC) 4929836
STRESS:
610930197
ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (1,100V)
CY8C28623-( 8C28623AC)
4929836
610930197
CML-RA
COMP
3
0
CML-RA
COMP
6
0
CML-RA
COMP
3
0
STRESS: STATIC LATCH-UP TESTING (125C, 200mA)
CY8C28623-( 8C28623AC)
4929836
610930197
STRESS: STATIC LATCH-UP TESTING (125C, 240mA)
CY8C28623-( 8C28623AC)
4929836
610930197
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Page 9 of 10
Document No. 001-87702 Rev. *C
ECN #4403815
Document History Page
Document Title:
Document Number:
QTP 093003: PSOC EMERALD DEVICE FAMILY, S4AD, FAB4
001-87702
Rev. ECN
Orig. of
No.
Change
**
4009835 NSR
*A
*B
*C
4074126 ILZ
4084815 ZIJ
4403815 JYF
Description of Change
Initial Spec Release.
Revision from Version 1.0 report in memo NSR-245.
- Remove VERSION 1.0in the title page.
- Updated the Cypress Technical Contact.
- Replaced CML-R facitilies with JCET-CHINA and added ASETAIWAN (G), CML-RA for 48 QFN package in Assembly site facility.
- Added CML-RA and KYEC in test location.
- Removed the reference Cypress specs in reliability tests performed
table and replaced with reference Industry standards.
- Added QTP#093003 1000H LFR data and recalculated the LFR FIT
rate.
Added ESD-CDM & ESD-HBM data on QTP 093003
Added Static LU data to QTP 093003
Updated device division from CCD to PSD;
Corrected data of Metal Composition in Technology/Fab Process
Description table.
Updated QTP title page and Reliability Tests Performed table
(EFR/LFR, HAST,TCT, PCT, HTSSL, LTOL, Acoustic, Dynamic
Latch-up) for template alignment.
Distribution: WEB
Posting:
None
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Page 10 of 10