Document No. 001-61696 Rev. *B ECN #: 4020615 Cypress Semiconductor Product Qualification Report QTP # 090403 June 2013 Nano PSoC 8C20100A (CapSense Venus) Product Family S4AD-5 Technology, Fab5 CY8C20110 CY8C20180 CY8C20160 CY8C20140 CY8C20142 CapSense® Express™ Button Capacitive Controllers CY8C20122 CapSense® Express™ - 9 I/Os CY8C20132 CY8C201A0 CY8C20110E CapSense® Express™ - 8 Button, 8 LEDS with LED Fading CapSense® Express™ Slider Capacitive Controllers CapSense® Express™ - 9 Buttons with I2C Interface CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Reliability Director (408) 943-2675 Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No. 001-61696 Rev. *B ECN #: 4020615 PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose Date 060605 Qualify GSMC using PSoC Device Product Family on S4AD-5 Technology Aug 2006 070505 Qualify PSOC 8C20000A Quark Device on S4AD-5 Technology, Fab5 (GSMC) Jan 2008 090403 Qualify Nano PSoC 8C20100A in S4AD-5 Technology at Fab5 (GSMC) May 2010 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Document No. 001-61696 Rev. *B ECN #: 4020615 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify Nano PSoC 8C20100A in S4AD-5 Technology at Fab5 (GSMC) Marketing Part #: CY8C2011x, CY8C2018x, CY8C2016x, CY8C2014x, CY8C2012x, CY8C201Ax, CY8C2013x Device Description: 3.3V and 5V Industrial 12Mhz Programmable System on Chip Cypress Division: Cypress Semiconductor Corporation – Programmable System Division (PSD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal 1: 250A TiN/5,800A Al/700A TiN Metal 2: 500A TiN/8,000A Al/250A TiN 7,000A TEOS /6,000A Si3N4 Metal Composition: Passivation Type and Thickness: Generic Process Technology/Design Rule (µ-drawn): Single Poly, Double Metal, 0.35 µm Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: Fab 5 / GSMC, Shanghai China Die Fab Line ID/Wafer Process ID: S4AD-5 GSMC Sonos PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 16-Lead QFN (Chip on Lead) Amkor Philippines (M) 24-Lead QFN (Chip on Lead) Amkor Korea (L) 28-Lead SSOP Amkor Philippines (M), CML-RA, OSE-Taiwan (T) 8/16 – Lead SOIC OSE – Taiwan (T) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Document No. 001-61696 Rev. *B ECN #: 4020615 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: SP28 Package Outline, Type, or Name: 28-Lead Shrunk Small Outline Package (SSOP) Mold Compound Name/Manufacturer: G600 Sumitomo Mold Compound Flammability Rating: V-0 PER UL-94 Oxygen Rating Index: None Lead Frame Material: Copper Lead Finish, Composition / Thickness: Pure Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Ablestik Die Attach Material: 8290 Die Attach Method: Die Attach Epoxy Bond Diagram Designation: 001-14450 Wire Bond Method: Thermosonic Wire Material/Size: Au. / 1.0 mil Thermal Resistance Theta JA °C/W: 96 °C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 001-00365 Name/Location of Assembly (prime) facility: Amkor-Phil (M) MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-RA, CML-R Note: Please contact a Cypress Representative for other package availability. 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Page 4 of 11 Document No. 001-61696 Rev. *B ECN #: 4020615 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C P High Temperature Steady State life 150°C, 5.5V, Vcc Max P Low Temperature Operating Life -30°C, 5.5V P P High Accelerated Saturation Test (HAST) 130°C, 5.25V, 85%RH Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 Temperature Cycle P 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C 121°C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity Level 1 Pressure Cooker P 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Acoustic Microscopy J-STD-020 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Data Retention 150°C ± 5°C No Bias P Dynamic Latch-up 150C, 8.5V P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114E P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V JESD22-C101 P Endurance Test MIL-STD-883, Method 883-1033 P 125C, ± 200mA P Static Latch-up JESD78 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 Document No. 001-61696 Rev. *B ECN #: 4020615 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 1,022 Devices 0 N/A N/A 0 PPM 720,000 DHRs 0 0.7 55 23 FIT 1,2 High Temperature Operating Life Long Term Failure Rate 3 3 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 11 Document No. 001-61696 Rev. *B ECN #: 4020615 Reliability Test Data QTP #: 060605 Device Fab Lot # Assy Lot # Assy Lot Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL1 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1500 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 336 256 0 9621713 610632687A PHIL-M COMP 47 0 STRESS: ENDURANCE CY8C24494 (8C24494A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24795A) 9623716 610639349 SEOUL-L COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOUL-L COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOUL-L COMP 9 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 Document No. 001-61696 Rev. *B ECN #: 4020615 Reliability Test Data QTP #: 060605 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOUL-L COMP 3 0 PHIL-M COMP 3 0 C-USA COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.5V, +/-200mA) CY8C24494 (8C24494A) 9623716 610639767 CY8C24494 (8C24994A) 9621713 CY8C24494 (8C24494A) 9623715 610638054 SEOL-L COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOUL-L COMP 3 0 PHIL-M COMP 2 0 STRESS: DYNAMIC LATCH-UP (125C, 8.5V) CY8C24494 (8C24494A) 9621713 610632687 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 96 1005 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 96 1144 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 96 908 1 CAPACITOR DEFECT STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767A PHIL-M 1000 180 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 80 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 80 0 500 45 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 5.5V CY8C24494 (8C24494A) 9621713 610632687 PHIL-M Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 11 Document No. 001-61696 Rev. *B ECN #: 4020615 Reliability Test Data QTP #: 060605 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 128 49 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 288 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 47 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 288 50 0 STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 500 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 500 49 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No. 001-61696 Rev. *B ECN #: 4020615 Reliability Test Data QTP #: 090403 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: DATA RETENTION, PLASTIC, 150C CY8C20334 (8C203345A) 4736795 610756411 PHIL-M 500 39 0 CY8C20334 (8C203345A) 4736795 610756411 PHIL-M 1000 39 0 CY8C20334 (8C203345A) 4736795 610756412 PHIL-M 500 42 0 CY8C20334 (8C203345A) 4736795 610756412 PHIL-M 1000 42 0 CY8C20334 (8C203345A) 4736795 610756411 PHIL-M COMP 47 0 CY8C20334 (8C203345A) 4736795 610756412 PHIL-M COMP 40 0 PHIL-M COMP 9 0 STRESS: ENDURANCE STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C20334 (8C203345A) 4736795 610756411 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, (2,200V) CY8C20334 (8C203345A) 4736795 610756411 PHIL-M COMP 4 0 CY8C20334 (8C203345A) 4736795 610756412 PHIL-M COMP 4 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C20334 (8C203345A) 4736795 610756411 PHIL-M 96 511 0 CY8C20334 (8C203345A) 4736795 610756412 PHIL-M 96 511 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C20334 (8C203345A) 4736795 610756412 PHIL-M 168 90 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.3V, +/-200mA) CY8C20334 (8C203345A) 4736795 610756411 PHIL-M COMP 3 0 CY8C20334 (8C203345A) 4736795 610756412 PHIL-M COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No. 001-61696 Rev. *B ECN #: 4020615 Document History Page Document Title: QTP 090403: Nano PSoC 8C20100A (CapSense Venus) Product Family S4AD-5 Technology, Fab5 Qualification Report 001-61696 Document Number: Rev. ECN No. ** 2932167 *A 3387204 *B 4020615 Orig. of Change NRG FDW NSR Description of Change Initial Spec Release Added CY8C20110E to first page Updated the Cypress technical contact person. Changed the product division from CCD to PSD. Removed reference Cypress specs in reliability tests performed table and replaced with industry standards. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11