Document No.001-89221 Rev. *A ECN # 4517702 Cypress Semiconductor Product Qualification Report QTP# 071104 VERSION*A September 2014 PSoC Mixed Signal Array Product Family S4AD-5 Technology, Fab5 CY8C21123 CY8C21223 CY8C21323 PSoCTM Mixed Signal Array with On-Chip Controller FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No.001-89221 Rev. *A ECN # 4517702 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 060605 Qualify GSMC using PSoC Device Product Family on S4AD-5 Technology Aug 06 071104 Qualify PSoC 8C21000A Device on S4AD-5 Technology, Fab5 Nov 07 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Document No.001-89221 Rev. *A ECN # 4517702 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify PSoC 8C21000A Device on S4AD-5 Technology, Fab5 Marketing Part #: CY8C21123, CY8C21223, CY8C21323, CY8C21000 Device Description 3.3V and 5V Industrial 24Mhz Programmable System on Chip Cypress Division: Cypress Semiconductor - Consumer and Computation Division TECHNOLOGY/FAB PROCESS DESCRIPTION –R28 Number of Metal Layers 2 Metal Composition: Metal 1: 250A TiN/5,800A Al/700A TiN Metal 2: 500A TiN/8,000A Al/250A TiN Passivation Type and Materials: 7,000A TeOs /6,000A Si3N4 Generic Process Technology /Design Rule (-drawn): Single Poly, Double Metal, 0.35 µm Gate Oxide Material/Thickness (MOS):in SiO2 / 110A Name/Location of Die Fab (prime) Facility: GSMC/China Die Fab Line ID/Wafer Process ID: S4AD-5 GSMC SONOS PACKAGE AVAILABILITY ASSEMBLY FACILITY SITE PACKAGE 8/16-Lead SOIC CML-RA, PHIL-M, TAIWAN-T 20- Lead SSOP CML-RA, TAIWAN-T 24-Lead MLF AMKOR-L (KOREA) . Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Document No.001-89221 Rev. *A ECN # 4517702 PLASTIC PACKAGE / ASSEMBLY DESCRIPTION Package Designation SZ16 Package Outline, Type, or Name: 16-Lead Small Outline Integrated Circuit (SOIC) Mold Compound Name/Manufacturer: EME 6600/Sumitomo Mold Compound Flammability Rating: V-0 PER UL-94 Oxygen Rating Index: None Lead Frame Material: Copper Lead Finish, Composition / Thickness: Pure Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Ablestik Die Attach Material: 8290 Die Attach Method: Epoxy Bond Diagram Designation: 001-11906 Wire Bond Method: Thermosonic Wire Material/Size: Au. 1.0mil Thermal Resistance Theta JA °C/W: 125C Package Cross Section Yes/No: N/A Assembly Process Flow: 49-24026 Name/Location of Assembly (prime) facility Amkor-Phil MSL Level 1 Reflow Profile 260C Note: Please contact a Cypress Representative for other packages availability. ELECTRICAL TEST / FINISH DESCRIPTION Test Location CML-R Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 11 Document No.001-89221 Rev. *A ECN # 4517702 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Test Condition (Temp/Bias) Dynamic Operating Condition, Vcc Max=5.5V, 125°C P Early Failure Rate High Temperature Operating Life Result P/F Dynamic Operating Condition, Vcc Max=5.5V, 125°C P Latent Failure Rate High Temperature Steady State life 125°C, 5.5V, Vcc Max P Low Temperature Operating Life P High Accelerated Saturation Test -30°C, 5.5V 130°C, 5.25V, 85%RH (HAST) Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Temperature Cycle Pressure Cooker MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C 121°C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C P P Acoustic Microscopy J-STD-020 Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Data Retention 150°C ± 5°C No Bias P Dynamic Latch-up 125C, 8.5V 2,200V JESD22, Method A114-B JESD22, Method A114-E P Electrostatic Discharge Human Body Model (ESD-HBM) P P Electrostatic Discharge 2,200V Human Body Model (ESD-HBM) MIL-STD-883, Method 3015. P Electrostatic Discharge 500V JESD22-C101 P Charge Device Model (ESD-CDM) Endurance Test MIL-STD-883, Method 883-1033 Static Latch-up 125C, ± 200mA JESD78B Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 P P Document No.001-89221 Rev. *A ECN # 4517702 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours High Temperature Operating Life Early Failure Rate3 1,010 Devices High Temperature Operating Life1,2 Long Term Failure Rate 720,000 DHRs 1 2 3 # Fails Activation Energy Thermal3 A.F Failure Rate 0 N/A N/A 0 PPM 0 0 .7 55 23 FIT Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 11 Document No.001-89221 Rev. *A ECN # 4517702 Reliability Test Data QTP #: 060605 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej ACOUSTIC, MSL1 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1500 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 336 256 0 9621713 610632687A PHIL-M COMP 47 0 STRESS: ENDURANCE CY8C24494 (8C24494A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24795A) 9623716 610639349 SEOL-L COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 STRESS: Failure Mechanism ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 Document No.001-89221 Rev. *A ECN # 4517702 Reliability Test Data QTP #: 060605 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 COMP 3 0 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.5V, +/-200mA) CY8C24494 (8C24494A) 9623716 CY8C24494 (8C24994A) 9621713 CY8C24494 (8C24494A) 9623715 610638054 SEOL-L COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 PHIL-M COMP 2 0 STRESS: PHIL-M C-USA COMP DYNAMIC LATCH-UP (125C, 8.5V) CY8C24494 (8C24494A) STRESS: 610639767 9621713 610632687 HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 96 1005 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 96 1144 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 96 908 1 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 180 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 180 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767A PHIL-M 1000 180 0 STRESS: 0 0 HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 80 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 80 0 45 0 STRESS: CAPACITOR DEFECT LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 5.5V CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 11 Document No.001-89221 Rev. *A ECN # 4517702 Reliability Test Data QTP #: 060605 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 128 49 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 288 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 47 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 288 50 0 STRESS: Failure Mechanism TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 500 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 500 49 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No.001-89221 Rev. *A ECN # 4517702 Reliability Test Data QTP #: 071104 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej DATA RETENTION, PLASTIC, 150C CY8C21223 (8C212235AK) 5716010 610751198 PHIL-M 500 40 0 CY8C21223 (8C212235AK) 5716010 610751202 PHIL-M 500 40 0 CY8C21223 (8C212235AK) 5716010 610751198 PHIL-M COMP 39 0 CY8C21223 (8C212235AK) 5716010 610751202 PHIL-M COMP 39 0 TWN-T COMP 9 0 8 0 STRESS: STRESS: ENDURANCE ESD-CHARGE DEVICE MODEL, (500V) CY8C212323 (8C213235AK) 5716010 STRESS: 610747058 ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, (2,200V) CY8C212323 (8C213235AK) 5716010 STRESS: 610747058 TWN-T COMP HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21223 (8C212235AK) 5716010 610751198 PHIL-M 96 505 0 CY8C21223 (8C212235AK) 5716010 610751202 PHIL-M 96 505 0 STRESS: Failure Mechanism HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21223 (8C212235AK) 5716010 610751198 PHIL-M 168 90 0 CY8C21223 (8C212235AK) 5716010 610751202 PHIL-M 168 90 0 TWN-T COMP 6 0 STRESS: STATIC LATCH-UP TESTING (125C, +/-200mA) CY8C212323 (8C213235AK) 5716010 610747058 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No.001-89221 Rev. *A ECN # 4517702 Document History Page Document Title: QTP#071104: PSoC Mixed Signal Array Product Family "CY8C21123/21223/21323" S4AD-5 Technology, Fab5 Document Number: 001-89221 Rev. ECN Orig. of No. Change ** 4125299 HSTO *A 4517702 HSTO Description of Change Initial Spec Release Initiate report as per memo HGA-252. Align qualification report based on the new template in the front page Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11