QTP# 060208:PSOC 8C20000 (QUARK) PRODUCT FAMILY CY8C20000/234/334/434/534/224/324/424/524 S4AD-5 TECHNOLOGY, FAB4

Document No.001-88134 Rev. *A
ECN # 4432506
Cypress Semiconductor
Product Qualification Report
QTP# 060208 VERSION *A
July 2014
PSoC 8C20000 (Quark) Product Family
S4AD-5 Technology, Fab4
CY8C20000
CY8C20234
PSoC® Programmable
CY8C20334
System- on-Chip™
CY8C20434
CY8C20534
CY8C20224
CapSense™ PSoC®
CY8C20324
Programmable SystemCY8C20424
on- Chip™
CY8C20524
FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Honesto Sintos
Reliability Engineer
Reviewed By:
Zhaomin Ji
Reliability Manager
Approved By:
Richard Oshiro
Reliability Director
Company Confidential
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Page 1 of 13
Document No.001-88134 Rev. *A
ECN # 4432506
PRODUCT QUALIFICATION HISTORY
Qual
Report
Description of Qualification Purpose
Date
Comp
052004
PSoC 8C21001A Neutron Product Family on SONOS S4AD-5 Technology, Fab4
Aug 05
060208
8C20000A Quark Family Device Qualification
Nov 06
080306
MM1 mask change on Quark Device 8C20000A using S4AD-5 Technology at CMI
(Fab4)
Feb 08
080301
MM2 mask change on Quark Device 8C20000A using S4AD-5 Technology at CMI
(Fab4)
Mar 08
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Page 2 of 13
Document No.001-88134 Rev. *A
ECN # 4432506
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: Qualify Device PSoC 8C20000A Quark Product Family on S4AD-5 Technology, Fab4
Marketing Part #:
Device
Description:
CY8C20000, CY8C20234, CY8C20334, CY8C20434, CY8C20534, CY8C20224,
CY8C20324, CY8C20424, CY8C20524
3.3V and 5V Industrial 12MHz Programmable System on Chip
Cypress Division: Cypress Semiconductor Corporation – Consumer and Computation Division
Overall Die (or Mask) REV Level (pre-requisite for qualification):
What ID markings on Die:
Rev. A
8C20000A
TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5
2
Number of Metal Layers:
Metal Composition: Metal 1: 500A Ti/6,000A Al /300A TiW
Metal 2: 500A Ti/8,000A Al/300A TiW
7,000A TEOS / 6,000A Si3N4
Passivation Type and Materials:
Free Phosphorus contents in top glass layer (%): 0%
Number of Transistors in Device:
100,000
Number of Gates in Device
10,000
Generic Process Technology/Design Rule (µ-
Single Poly, Double Metal, 0.35 µm
Gate Oxide Material/Thickness (MOS):
SiO2 / 110A
Name/Location of Die Fab (prime) Facility:
Cypress Semiconductor / Minnesota
Die Fab Line ID/Wafer Process ID:
Fab4/S4AD-5
PACKAGE AVAILABILITY
PACKAGE
ASSEMBLY SITE FACILITY
28-Lead SSOP
PHIL-M, TAIWN-T, CML-RA
16-Lead QFN
PHIL-M
24-Lead QFN
SEOUL-L, ASE-G
32-Lead QFN
SEOUL-L, CML-RA, CARSEM (CA), PHIL-MB, ASE-G
48-Lead QFN
SEOUL-L
Note: Package Qualification details upon request.
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Page 3 of 13
Document No.001-88134 Rev. *A
ECN # 4432506
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
SP28
28-Lead Shrunk Small Outline Package (SSOP)
G600
V-O per UL94
Oxygen Rating Index:
>28%
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
100% Pure Sn
Die Backside Preparation
Method/Metallization:
Die Separation Method:
Backgrind
Die Attach Supplier:
Ablestik
Die Attach Material:
8290
Die Attach Method:
Epoxy
Bond Diagram Designation:
001-14450
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au, 1.0mil
Thermal Resistance Theta JA °C/W:
90°C/W
Package Cross Section Yes/No:
NA
Assembly Process Flow:
49-41999
Name/Location of Assembly (prime) facility:
Amkor-Philippines (28 SSOP)
100% Saw
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-RA, KYEC
Fault Coverage: 100%
Note: Please contact a Cypress Representative for other packages availability.
Company Confidential
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Page 4 of 13
Document No.001-88134 Rev. *A
ECN # 4432506
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT
Stress/Test
Test Condition
(Temp/Bias)
Result
P/F
High Temperature Operating Life
Early Failure Rate
Dynamic Operating Condition, Vcc Max=5.5V, 125°C
P
High Temperature Operating Life
Latent Failure Rate
Dynamic Operating Condition, Vcc Max=5.5V, 125°C
P
High Accelerated Saturation Test
(HAST)
130°C, 5.25V, 85%RH
P
Temperature Cycle
MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity Level 1
168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C
P
Pressure Cooker
121°C, 100%RH
P
Precondition: JESD22 Moisture Sensitivity Level 1
168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C
Precondition: JESD22 Moisture Sensitivity Level 1
168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C
Data Retention
150°C ± 5°C No Bias
P
High Temperature Steady State life
125°C, 5.5V, Vcc Max
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V
JESD22, Method A114-B
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V
MIL-STD-883, Method 3015.7
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V
JESD22-C101C
P
Endurance Test
MIL-STD-883, Method 883-1033
P
Age Bond Strength
200C, 4hrs
MIL-STD-883, Method 883-2011
P
Low Temperature Operating Life
-30C, 5.5V, 8MHZ
P
SEM Analysis
MIL-STD-883, Method 883-2018-2
P
Acoustic Microscopy
Spec. 25-00104
P
Dynamic Latch up
125C, 8.3V
125C, 11V, ± 300mA
P
Latch up Sensitivity
In accordance with JEDEC 17.
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Page 5 of 13
P
Document No.001-88134 Rev. *A
ECN # 4432506
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
Device Tested/
Device Hours
# Fails
Activation
Energy
Thermal3
A.F
Failure
Rate
High Temperature Operating Life
Early Failure Rate1
4,006 Devices
0
N/A
N/A
0 PPM
High Temperature Operating Life1, 2
Long Term Failure Rate
528,750 DHRs
0
0 .7
55
31 FIT
1
2
3
Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation

1 1
AF = exp  E A  -  
 k T 2 T 1  
Where:
EA =The Activation Energy of the defect mechanism.
k = Boltzmann's constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of
the device at use conditions.
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Page 6 of 13
Document No.001-88134 Rev. *A
ECN # 4432506
Reliability Test Data
QTP #:
Device
STRESS:
Fab Lot #
052004
Assy Lot #
Assy Loc Duration
Samp
Rej
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
15
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
COMP
15
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
COMP
15
0
STRESS:
AGE BOND STRENGTH
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
10
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
COMP
10
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
COMP
10
0
STRESS:
DATA RETENTION, PLASTIC, 150C
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
500
256
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
1000
256
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
500
256
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
1000
254
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
500
252
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
1000
252
0
4516647
610521157
TAIWN-T
COMP
45
0
STRESS:
ENDURANCE
CY8C21534 (8C21534A)
STRESS:
ESD-CHARGE DEVICE MODEL, (500V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
9
0
STRESS:
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
9
0
STRESS:
Failure Mechanism
ACOUSTIC, MSL1
ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
3
0
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Page 7 of 13
Document No.001-88134 Rev. *A
ECN # 4432506
Reliability Test Data
QTP #:
Device
STRESS:
Fab Lot #
Assy Lot #
052004
Assy Loc Duration
Samp
Rej
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
120
1002
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
120
1002
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
120
1002
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
750
235
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
750
235
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
750
235
0
STRESS:
HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
168
76
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
336
76
0
STRESS:
HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE CONDITION 168 HR 85C/85%RH (MSL1)
CY8C21234 (8C21234A)
4516647
610527569
PHIL-M
128
49
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
128
44
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
128
44
0
500
45
0
STRESS:
Failure Mechanism
LOW TEMPERATURE OPERATING LIFE (-30C, 5.5V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE CONDITION 168 HR 85C/85%RH (MSL1)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
168
45
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
336
45
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
168
45
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
336
45
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
168
45
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
336
45
0
STRESS:
STATIC LATCH-UP TESTING (125C, 11V, ±300mA)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
3
0
610521157
TAIWN-T
3
0
STRESS:
DYNAMIC LATCH-UP (8.3V)
CY8C21534 (8C21534A)
4516647
COMP
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Page 8 of 13
Document No.001-88134 Rev. *A
ECN # 4432506
Reliability Test Data
QTP #:
Device
STRESS:
Fab Lot #
Assy Lot #
052004
Assy Loc Duration
Samp
Rej
Failure Mechanism
TC COND. C -65C TO 150C, PRECONDITION 168 HRS 85C/85%RH (MSL1)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
300
50
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
500
50
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
1000
50
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
300
45
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
1000
45
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
300
45
0
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Page 9 of 13
Document No.001-88134 Rev. *A
ECN # 4432506
Reliability Test Data
QTP #:
Device
STRESS:
Fab Lot #
Assy Lot #
060208
Assy Loc Duration
Samp
Rej
DATA RETENTION, PLASTIC, 150C
CY8C20334 (8C20334A)
4609402
NA
PHIL-M
500
80
0
CY8C20334 (8C20334A)
4609402
NA
PHIL-M
1000
80
0
4609402
NA
PHIL-M
COMP
48
0
9
0
9
0
3
0
STRESS:
ENDURANCE
CY8C20334 (8C20334A)
STRESS:
ESD-CHARGE DEVICE MODEL, (500V)
CY8C20434 (8C20434A)
STRESS:
CML-RA
COMP
4609402
610646539
CML-RA
COMP
4609402
610646539
CML-RA
COMP
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max)
CY8C20334 (8C20334A)
STRESS:
610646539
ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V)
CY8C20434 (8C20434A)
STRESS:
4609402
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY8C20434 (8C20434A)
STRESS:
Failure Mechanism
4609402
NA
PHIL-M
96
1000
0
HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max)
CY8C20334 (8C20334A)
4609402
NA
PHIL-M
168
179
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE CONDITION 168 HR 85C/85%RH (MSL1)
CY8C20334 (8C20334A)
4609402
NA
PHIL-M
168
50
0
CY8C20334 (8C20334A)
4609402
NA
PHIL-M
288
50
0
COMP
3
0
STRESS:
STATIC LATCH-UP TESTING (125C, 8.5V, ±240mA)
CY8C20434 (8C20434A)
STRESS:
4609402
610646539
CML-RA
TC COND. C -65C TO 150C, PRECONDITION 168 HRS 85C/85%RH (MSL1)
CY8C20334 (8C20334A)
4609402
NA
PHIL-M
300
50
0
CY8C20334 (8C20334A)
4609402
NA
PHIL-M
500
50
0
CY8C20334 (8C20334A)
4609402
NA
PHIL-M
1000
50
0
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Page 10 of 13
Document No.001-88134 Rev. *A
ECN # 4432506
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
080306
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: SORT YIELD
CY8C20234 (8C20234A)
STRESS:
4735309
COMP
COMPARABLE
4735309
COMP
COMPARABLE
ETEST YIELD
CY8C20234 (8C20234A)
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Page 11 of 13
Document No.001-88134 Rev. *A
ECN # 4432506
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
080301
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: SORT YIELD
(8C20000A)
STRESS:
4735309
COMP
COMPARABLE
4735309
COMP
COMPARABLE
ETEST YIELD
(8C20000A)
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Page 12 of 13
Document No.001-88134 Rev. *A
ECN # 4432506
Document History Page
Document Title: QTP# 060208: PSOC 8C20000 (QUARK) PRODUCT FAMILY
"CY8C20000/234/334/434/534/224/324/424/524" S4AD-5 TECHNOLOGY, FAB4
Document Number: 001-88134
Rev. ECN
Orig. of
No.
Change
**
4040475 HSTO
*A
4432506 HSTO
Description of Change
Initial Spec Release
Qualification report published on Cypress.com is documented on
memo HGA-827 and was transferred to qualification report spec
template.
Updated package availability based on current qualified test &
assembly site.
Deleted Cypress reference Spec and replaced with Industry Standards
in Reliability Test Performed Table.
Align qualification report based on the new template in the front page
Distribution: WEB
Posting:
None
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Page 13 of 13