Document No.001-88134 Rev. *A ECN # 4432506 Cypress Semiconductor Product Qualification Report QTP# 060208 VERSION *A July 2014 PSoC 8C20000 (Quark) Product Family S4AD-5 Technology, Fab4 CY8C20000 CY8C20234 PSoC® Programmable CY8C20334 System- on-Chip™ CY8C20434 CY8C20534 CY8C20224 CapSense™ PSoC® CY8C20324 Programmable SystemCY8C20424 on- Chip™ CY8C20524 FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 13 Document No.001-88134 Rev. *A ECN # 4432506 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 052004 PSoC 8C21001A Neutron Product Family on SONOS S4AD-5 Technology, Fab4 Aug 05 060208 8C20000A Quark Family Device Qualification Nov 06 080306 MM1 mask change on Quark Device 8C20000A using S4AD-5 Technology at CMI (Fab4) Feb 08 080301 MM2 mask change on Quark Device 8C20000A using S4AD-5 Technology at CMI (Fab4) Mar 08 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 13 Document No.001-88134 Rev. *A ECN # 4432506 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify Device PSoC 8C20000A Quark Product Family on S4AD-5 Technology, Fab4 Marketing Part #: Device Description: CY8C20000, CY8C20234, CY8C20334, CY8C20434, CY8C20534, CY8C20224, CY8C20324, CY8C20424, CY8C20524 3.3V and 5V Industrial 12MHz Programmable System on Chip Cypress Division: Cypress Semiconductor Corporation – Consumer and Computation Division Overall Die (or Mask) REV Level (pre-requisite for qualification): What ID markings on Die: Rev. A 8C20000A TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 2 Number of Metal Layers: Metal Composition: Metal 1: 500A Ti/6,000A Al /300A TiW Metal 2: 500A Ti/8,000A Al/300A TiW 7,000A TEOS / 6,000A Si3N4 Passivation Type and Materials: Free Phosphorus contents in top glass layer (%): 0% Number of Transistors in Device: 100,000 Number of Gates in Device 10,000 Generic Process Technology/Design Rule (µ- Single Poly, Double Metal, 0.35 µm Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor / Minnesota Die Fab Line ID/Wafer Process ID: Fab4/S4AD-5 PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 28-Lead SSOP PHIL-M, TAIWN-T, CML-RA 16-Lead QFN PHIL-M 24-Lead QFN SEOUL-L, ASE-G 32-Lead QFN SEOUL-L, CML-RA, CARSEM (CA), PHIL-MB, ASE-G 48-Lead QFN SEOUL-L Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 13 Document No.001-88134 Rev. *A ECN # 4432506 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: SP28 28-Lead Shrunk Small Outline Package (SSOP) G600 V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: 100% Pure Sn Die Backside Preparation Method/Metallization: Die Separation Method: Backgrind Die Attach Supplier: Ablestik Die Attach Material: 8290 Die Attach Method: Epoxy Bond Diagram Designation: 001-14450 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 90°C/W Package Cross Section Yes/No: NA Assembly Process Flow: 49-41999 Name/Location of Assembly (prime) facility: Amkor-Philippines (28 SSOP) 100% Saw ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-RA, KYEC Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 13 Document No.001-88134 Rev. *A ECN # 4432506 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C P High Accelerated Saturation Test (HAST) 130°C, 5.25V, 85%RH P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C P Pressure Cooker 121°C, 100%RH P Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Data Retention 150°C ± 5°C No Bias P High Temperature Steady State life 125°C, 5.5V, Vcc Max P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V JESD22-C101C P Endurance Test MIL-STD-883, Method 883-1033 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Low Temperature Operating Life -30C, 5.5V, 8MHZ P SEM Analysis MIL-STD-883, Method 883-2018-2 P Acoustic Microscopy Spec. 25-00104 P Dynamic Latch up 125C, 8.3V 125C, 11V, ± 300mA P Latch up Sensitivity In accordance with JEDEC 17. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 13 P Document No.001-88134 Rev. *A ECN # 4432506 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 4,006 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1, 2 Long Term Failure Rate 528,750 DHRs 0 0 .7 55 31 FIT 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation 1 1 AF = exp E A - k T 2 T 1 Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 13 Document No.001-88134 Rev. *A ECN # 4432506 Reliability Test Data QTP #: Device STRESS: Fab Lot # 052004 Assy Lot # Assy Loc Duration Samp Rej CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 15 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 15 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 10 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 10 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 500 256 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 1000 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 500 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 254 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 500 252 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 1000 252 0 4516647 610521157 TAIWN-T COMP 45 0 STRESS: ENDURANCE CY8C21534 (8C21534A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 9 0 STRESS: Failure Mechanism ACOUSTIC, MSL1 ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 13 Document No.001-88134 Rev. *A ECN # 4432506 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 052004 Assy Loc Duration Samp Rej HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 120 1002 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 120 1002 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 120 1002 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 750 235 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T 750 235 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T 750 235 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 168 76 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 336 76 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE CONDITION 168 HR 85C/85%RH (MSL1) CY8C21234 (8C21234A) 4516647 610527569 PHIL-M 128 49 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 128 44 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 128 44 0 500 45 0 STRESS: Failure Mechanism LOW TEMPERATURE OPERATING LIFE (-30C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE CONDITION 168 HR 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 168 45 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 336 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 336 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 336 45 0 STRESS: STATIC LATCH-UP TESTING (125C, 11V, ±300mA) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 3 0 610521157 TAIWN-T 3 0 STRESS: DYNAMIC LATCH-UP (8.3V) CY8C21534 (8C21534A) 4516647 COMP Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 13 Document No.001-88134 Rev. *A ECN # 4432506 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 052004 Assy Loc Duration Samp Rej Failure Mechanism TC COND. C -65C TO 150C, PRECONDITION 168 HRS 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 300 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 500 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 1000 50 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 300 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 300 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 13 Document No.001-88134 Rev. *A ECN # 4432506 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 060208 Assy Loc Duration Samp Rej DATA RETENTION, PLASTIC, 150C CY8C20334 (8C20334A) 4609402 NA PHIL-M 500 80 0 CY8C20334 (8C20334A) 4609402 NA PHIL-M 1000 80 0 4609402 NA PHIL-M COMP 48 0 9 0 9 0 3 0 STRESS: ENDURANCE CY8C20334 (8C20334A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C20434 (8C20434A) STRESS: CML-RA COMP 4609402 610646539 CML-RA COMP 4609402 610646539 CML-RA COMP HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C20334 (8C20334A) STRESS: 610646539 ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C20434 (8C20434A) STRESS: 4609402 ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C20434 (8C20434A) STRESS: Failure Mechanism 4609402 NA PHIL-M 96 1000 0 HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C20334 (8C20334A) 4609402 NA PHIL-M 168 179 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE CONDITION 168 HR 85C/85%RH (MSL1) CY8C20334 (8C20334A) 4609402 NA PHIL-M 168 50 0 CY8C20334 (8C20334A) 4609402 NA PHIL-M 288 50 0 COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.5V, ±240mA) CY8C20434 (8C20434A) STRESS: 4609402 610646539 CML-RA TC COND. C -65C TO 150C, PRECONDITION 168 HRS 85C/85%RH (MSL1) CY8C20334 (8C20334A) 4609402 NA PHIL-M 300 50 0 CY8C20334 (8C20334A) 4609402 NA PHIL-M 500 50 0 CY8C20334 (8C20334A) 4609402 NA PHIL-M 1000 50 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 13 Document No.001-88134 Rev. *A ECN # 4432506 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 080306 Assy Loc Duration Samp Rej Failure Mechanism STRESS: SORT YIELD CY8C20234 (8C20234A) STRESS: 4735309 COMP COMPARABLE 4735309 COMP COMPARABLE ETEST YIELD CY8C20234 (8C20234A) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 13 Document No.001-88134 Rev. *A ECN # 4432506 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 080301 Assy Loc Duration Samp Rej Failure Mechanism STRESS: SORT YIELD (8C20000A) STRESS: 4735309 COMP COMPARABLE 4735309 COMP COMPARABLE ETEST YIELD (8C20000A) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 13 Document No.001-88134 Rev. *A ECN # 4432506 Document History Page Document Title: QTP# 060208: PSOC 8C20000 (QUARK) PRODUCT FAMILY "CY8C20000/234/334/434/534/224/324/424/524" S4AD-5 TECHNOLOGY, FAB4 Document Number: 001-88134 Rev. ECN Orig. of No. Change ** 4040475 HSTO *A 4432506 HSTO Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo HGA-827 and was transferred to qualification report spec template. Updated package availability based on current qualified test & assembly site. Deleted Cypress reference Spec and replaced with Industry Standards in Reliability Test Performed Table. Align qualification report based on the new template in the front page Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 13